H. Takizawa

Electromigration induced incubation, drift and threshold in single-damascene copper interconnects

S. Yokogawa, H. Takizawa, 2002, Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).

Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC

Norio Morishita, Satoshi Yamasaki, Takeshi Ohshima, 2002 .

Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S Ä 32 and C 3 v symmetry in n-type 4 H-SiC

T. Ohshima, S. Yamasaki, J. Isoya, 2002 .

Electromigration Performance of Multi-level Damascene Copper Interconnects

N. Okada, S. Yokogawa, Y. Kakuhara, 2001, Microelectron. Reliab..

Spin multiplicity and charge state of a silicon vacancy (TV2a) in 4H-SiC determined by pulsed ENDOR

T. Ohshima, S. Yamasaki, J. Isoya, 2005 .

EPR studies of the isolated negatively charged silicon vacancies in n-type 4H- and 6H-SiC: Identification of C3v symmetry and silicon sites

T. Ohshima, S. Yamasaki, J. Isoya, 2003 .

Variational Method for the Ground State Energy of a Quantum Many-Particle System

H. Takizawa, A. Oguchi, 2000 .

Identification of a Frenkel-pair defect in electron-irradiated 3C SiC

E. Janzén, N. T. Son, T. Ohshima, 2009 .

Impact of 20-MeV /spl alpha/-ray irradiation on the V-band performance of AlGaAs pseudomorphic HEMTs

E. Simoen, C. Claeys, M. Yoneoka, 2000 .