J. P. Liu

发表

High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide

Eberhard Bugiel, H. J. Osten, J. P. Liu, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Substitutional carbon incorporation during Si1−x−yGexCy growth on Si(100) by molecular-beam epitaxy: Dependence on germanium and carbon

H. Osten, J. P. Liu, 2000 .

Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films

Pengwan Chen, Z. S. Liu, Z. Liu, 2014 .

Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealing

H. Osten, J. P. Liu, E. Bugiel, 2001 .

Dielectric functions, elasto-optical effects, and critical-point parameters of biaxially stressed Si1−yCy alloys on Si (0 0 1)

H. Osten, A. Demkov, J. P. Liu, 2006 .

Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion

J. P. Liu, E. Chor, L. Chan, 2003 .

Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe

B. Heinemann, H. Osten, H. Rücker, 2001 .

Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness

Z. Liu, J. P. Liu, Wenzhu Liu, 2015 .

Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD

J. P. Liu, W. Zheng, H. Yang, 2003 .

Band gap and band discontinuities at crystalline Pr2O3/Si(001) heterojunctions

H. Osten, J. P. Liu, H. Müssig, 2002 .

Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells.

Z. Liu, J. P. Liu, H. Yang, 2015, Optics express.

Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer

B. Zhang, J. P. Liu, H. Yang, 2004 .

Green light‐emitting diodes with p‐InGaN:Mg grown on c ‐plane sapphire and GaN substrates

R. Dupuis, J. Limb, J. P. Liu, 2009 .

XPS study of impurities in Si‐doped AlN film

Z. Liu, J. P. Liu, J. Zhu, 2016 .

Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD

Z. Liu, J. P. Liu, H. Yang, 2016 .

The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters

Z. Liu, J. P. Liu, Wenzhu Liu, 2015 .

Hydrothermally grown ZnO nanorods on self-source substrate and their field emission

J. P. Liu, Y. Yang, C. Xu, 2007 .

Growth of crystalline praseodymium oxide on silicon

H. Osten, J. P. Liu, E. Bugiel, 2002 .

Epitaxial growth of praseodymium oxide on silicon

H. Osten, J. P. Liu, E. Bugiel, 2001 .

Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

X. F. Liu, L. Li, J. P. Liu, 1999 .

Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate

Baoshun Zhang, J. P. Liu, J. Zhu, 2004 .

Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD

Z. Liu, J. P. Liu, Wenzhu Liu, 2017 .

Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes

J. P. Liu, M. Kong, L. Y. Lin, 1999 .

Sputtering on He cooled substrate: a new method for producing nanometre-size materials

J. P. Liu, Y. K. Huang, A. Menovsky, 1996 .

Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses

Z. Liu, J. P. Liu, H. Yang, 2016 .

Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)

J. P. Liu, M. Kong, Dianzhao Sun, 1999 .

Growth and luminescence properties of a novel crystal with large birefringence: ErBa3B9O18

J. P. Liu, Wenzhong Wang, Xihua Chen, 2009 .

Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)

J. P. Liu, Bingsen Zhang, H. Yang, 2003 .

High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)

J. P. Liu, M. Kong, D. Sun, 1999 .

New insight into the dry rolling-sliding wear mechanism of carbide-free bainitic and pearlitic steel

Y. Li, C. Tian, J. P. Liu, 2019, Wear.

Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy

J. P. Liu, M. Kong, Decai Huang, 1999 .

Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells

Desheng Jiang, Qian Sun, J. P. Liu, 2005 .

The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN‐based multiple quantum well laser diodes

Z. Liu, J. P. Liu, H. Yang, 2015 .

The study on properties of Sr2+-doped α-BBO crystal

Shengming Zhou, Guangjun Zhao, J. P. Liu, 2004 .

Initial stages of praseodymium oxide film formation on Si( 0 0 1 )

H. Osten, J. P. Liu, J. Dabrowski, 2002 .

Chemical composition and elastic strain in AlInGaN quaternary films

Shude Yao, J. P. Liu, Shengqiang Zhou, 2006 .

Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells

Z. Liu, Ping Chen, Xiaoyue He, 2016 .

Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs

Z. Liu, J. P. Liu, H. Yang, 2016 .

A Novel Thin Buffer Concept for Epitaxial Growth of Relaxed SiGe Layers with Low Threading Dislocation Density

H. Osten, C. C. Wong, D. Sohn, 2005 .

Strain relaxation mechanism in a reverse compositionally graded SiGe heterostructure

F. Romanato, L. Wong, J. P. Liu, 2007 .

Threading dislocation reduction by SiGeC domains in SiGe∕SiGeC heterostructure: Role of pure edge dislocations

L. Wong, J. P. Liu, C. Wong, 2006 .

Thermal Stability of a Reverse-Graded SiGe Buffer Layer for Growth of Relaxed SiGe Epitaxy

T. White, D. Sohn, L. Wong, 2006 .

Low-dislocation-density strain relaxation of SiGe on a SiGe∕SiGeC buffer layer

T. White, L. Wong, J. P. Liu, 2006 .

Identification of degradation mechanisms of blue InGaN/GaN laser diodes

Hui Yang, Aiqin Tian, Fengshan Zhang, 2015 .

Preparation of crystalline beta barium borate thin films on Sr2+-doped alpha barium borate substrates by liquid phase epitaxy

Shengming Zhou, L. Qian, J. P. Liu, 2006 .

Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC

Z. Liu, Xiaoyue He, J. P. Liu, 2016 .

Growth of beta barium borate (β-BaB2O4) thin films on alpha barium borate (α-BaB2O4) substrates

Shengming Zhou, J. P. Liu, C. Xia, 2005 .

Residual stress in beta barium borate (β-BaB2O4) thin films grown by liquid phase epitaxy

J. P. Liu, C. Xia, Guoqing Zhou, 2004 .

Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as p-Type Hole Injection and Contact Layers

R. Dupuis, J. Limb, J. P. Liu, 2008 .

The effectiveness of electron blocking layer in InGaN‐based laser diodes with different indium content

Z. Liu, J. P. Liu, D. Jiang, 2016 .

Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters

J. P. Liu, M. Kong, D. Sun, 1998 .

Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes.

Z. Liu, J. P. Liu, H. Yang, 2016, Optics express.

Evolution of height distribution of Ge islands on Si(1 0 0)

Q. Gong, J. P. Liu, M. Kong, 1999 .