Shengqiang Xu

发表

High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm.

C. S. Tan, Xin Guo, Hao Zhou, 2020, Optics express.

Enhanced Photo Response at Two-Micron-Wavelength Using GeSn/Ge Multiple-Quantum-Well Waveguide

Y. Yeo, Shengqiang Xu, Yi-Chiau Huang, 2019 .

Enhanced Photo Response at Two-Micron-Wavelength Using GeSn/Ge Multiple-Quantum-Well Waveguide

Y. Yeo, Shengqiang Xu, Yi-Chiau Huang, 2019, 2019 Conference on Lasers and Electro-Optics (CLEO).

Strain relaxation of germanium-tin (GeSn) fins

Y. Yeo, C. S. Tan, Shengqiang Xu, 2018 .

Enhanced Germanium-Tin P-Channel FinFET Performance using Post-Metal Anneal

Y. Yeo, C. S. Tan, Shengqiang Xu, 2018, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).

Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band.

Y. Yeo, C. S. Tan, Hong Wang, 2019, Optics express.

Strong Purcell effect in deep subwavelength coaxial cavity with GeSn active medium.

Shengqiang Xu, Xiao Gong, Tianhua Ren, 2021, Optics letters.

GeSn p-FinFETs with Sub-10 nm Fin Width Realized on a 200 mm GeSnOI Substrate: Lowest SS of 63 mV/decade, Highest Gm,int of 900 µS/µm, and High-Field µeff of 275 cm2/V•s

C. S. Tan, Shengqiang Xu, Yi-Chiau Huang, 2018, 2018 IEEE Symposium on VLSI Technology.

The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs

Y. Yeo, C. S. Tan, Shengqiang Xu, 2017, 2017 Symposium on VLSI Technology.

Formation of GeSn Multiple-Quantum-Well Microdisks on Insulating Platform Toward Lasing Applications

Y. Yeo, C. S. Tan, Shengqiang Xu, 2019, 2019 Conference on Lasers and Electro-Optics (CLEO).

High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate.

Hong Wang, Wei Wang, Shengqiang Xu, 2019, Optics express.

High-Efficiency Photo Detection at 2 μm Realized by GeSn/Ge Multiple-Quantum-Well Photodetectors with Photon-Trapping Microstructure

C. S. Tan, Xin Guo, Hao Zhou, 2020, 2020 Conference on Lasers and Electro-Optics (CLEO).

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform.

Wei Wang, Chuan Seng Tan, Shengqiang Xu, 2018, Optics express.

Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width.

G. Liang, Shengqiang Xu, X. Gong, 2021, Nano letters.

Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.

Wei Wang, Shengqiang Xu, Xiao Gong, 2017, Optics express.

Sub- $10^{-\textsf{9}}\,\,\Omega\cdot{\text{cm}}^{\textsf{2}}$ Specific Contact Resistivity (Down to $\textsf{4.4}\times\textsf{10}^{-\textsf{10}}\,\,\Omega\cdot\textsf{cm}^{\textsf{2}}$ ) for Metal Contact on Ga and Sn Surface-Segregated GeSn Film

Y. Yeo, Shengqiang Xu, X. Gong, 2018, IEEE Transactions on Electron Devices.

Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate

Y. Yeo, C. S. Tan, Shengqiang Xu, 2018, IEEE Transactions on Electron Devices.

Unipolar n-Type Conduction in Black Phosphorus Induced by Atomic Layer Deposited MgO

Chunxiang Zhu, K. Ang, Shengqiang Xu, 2019, IEEE Electron Device Letters.

Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

A. Thean, Shengqiang Xu, X. Gong, 2020, IEEE Electron Device Letters.

High Field Temperature-Independent Field-Effect Mobility of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors: Understanding the Importance of Equivalent-Oxide-Thickness Downscaling

Shengqiang Xu, X. Gong, S. Samanta, 2021, IEEE Transactions on Electron Devices.

Ge0.9Sn0.1 p-i-n Photodiode with Record-High Responsivity at Two-Micron-Wavelength

Y. Yeo, Xin Guo, Hong Wang, 2018, 2018 IEEE 15th International Conference on Group IV Photonics (GFP).

Metal/P-type GeSn Contacts with Specific Contact Resistivity down to 4.4×10−10 Ω-cm2

Y. Yeo, Shengqiang Xu, X. Gong, 2018, 2018 IEEE Symposium on VLSI Technology.