X. Gong

发表

High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm.

C. S. Tan, Xin Guo, Hao Zhou, 2020, Optics express.

Lattice-Mismatched $\hbox{In}_{0.4}\hbox{Ga}_{0.6} \hbox{As}$ Source/Drain Stressors With In Situ Doping for Strained $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel n-MOSFETs

Y. Yeo, Xinke Liu, X. Gong, 2009, IEEE Electron Device Letters.

Self-Aligned Gate-First In0.7Ga0.3As n-MOSFETs with an InP Capping Layer for Performance Enhancement

Xiao Gong, Yee-Chia Yeo, Clement Hsingjen Wann, 2011 .

In0.7Ga0.3As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain

Xiao Gong, Yee-Chia Yeo, Clement Hsingjen Wann, 2011 .

Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction

Ivana, Y. Yeo, C. Chia, 2011 .

Gate Stack Reliability of MOSFETs With High-Mobility Channel Materials: Bias Temperature Instability

Y. Yeo, B. Liu, X. Gong, 2013, IEEE Transactions on Device and Materials Reliability.

A Self-Aligned Ni-InGaAs Contact Technology for InGaAs Channel n-MOSFETs

Xiao Gong, Yee-Chia Yeo, Ivana, 2012 .

Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

Chun-Yen Chang, Xiao Gong, Yee-Chia Yeo, 2011 .

A new self-aligned contact technology for III-V MOSFETs

Chun-Yen Chang, Y. Yeo, G. Luo, 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

III–V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization

Y. Yeo, X. Gong, H. Chin, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate

Y. Yeo, G. Liang, X. Gong, 2017, IEEE Transactions on Electron Devices.

Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiOx/W cross-point structure

X. Gong, S. Samanta, Panpan Zhang, 2019, Journal of Alloys and Compounds.

Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

Kain Lu Low, Y. Yeo, G. Han, 2012, 2012 International Electron Devices Meeting.

A 6.5 nm thick anti-ferroelectric HfAlO x film for energy storage devices with a high density of 63.7 J cm−3

X. Gong, Jiuren Zhou, Yuye Kang, 2021, Journal of Physics D: Applied Physics.

Temperature Dependence of Ferroelectricity in Al-Doped HfO2 Featuring a High Pr of 23.7 μC/cm2

Haibo Wang, X. Gong, Jiuren Zhou, 2020, IEEE Transactions on Electron Devices.

Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

Y. Yeo, G. Liang, X. Gong, 2016 .

Enhanced Photo Response at Two-Micron-Wavelength Using GeSn/Ge Multiple-Quantum-Well Waveguide

Y. Yeo, Shengqiang Xu, Yi-Chiau Huang, 2019 .

Enhanced Photo Response at Two-Micron-Wavelength Using GeSn/Ge Multiple-Quantum-Well Waveguide

Y. Yeo, Shengqiang Xu, Yi-Chiau Huang, 2019, 2019 Conference on Lasers and Electro-Optics (CLEO).

III–V Multiple-Gate Field-Effect Transistors With High-Mobility $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Channel and Epi-Controlled Retrograde-Doped Fin

Luping Shi, Xiao Gong, Yee-Chia Yeo, 2011, IEEE Electron Device Letters.

Germanium Multiple-Gate Field-Effect Transistors Formed on Germanium-on-Insulator Substrate

Y. Yeo, B. Nguyen, B. Liu, 2013, IEEE Transactions on Electron Devices.

Fabrication and Negative Bias Temperature Instability (NBTI) Study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 Passivation and HfO2 High-k and TaN Metal Gate

Y. Yeo, W. Wang, B. Liu, 2013 .

Highly Scaled Strained Silicon-On-Insulator Technology for the 5G Era: Impact of Geometry and Annealing on Strain Retention and Device Performance of nMOSFETs

A. Thean, W. Schwarzenbach, B. Nguyen, 2019, IEEE Transactions on Electron Devices.

A unified surface potential based physical compact model for both unipolar and ambipolar 2D-FET: Experimental verification and circuit demonstration

A. Thean, G. Liang, K. Ang, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Analysis on Performance of Ferroelectric NC-FETs Based on Real-Space Gibbs-Free Energy With Atomic Channel Structure

G. Liang, X. Gong, Xiaoyi Zhang, 2019, IEEE Transactions on Electron Devices.

Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length

A. Thean, X. Gong, Annie Kumar, 2021, IEEE Transactions on Electron Devices.

A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOₓ Ferroelectric Film

Haibo Wang, X. Gong, Jiuren Zhou, 2020, IEEE Electron Device Letters.

Implementation of InGaAs-OI Passive Devices and Its Application to 5G Millimeter-Wave Phase Shifter

D. Antoniadis, E. Fitzgerald, X. Gong, 2019, 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS).

Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology

Y. Yeo, X. Gong, Annie Kumar, 2018 .

GeSn-on-insulator substrate formed by direct wafer bonding

Chuan Seng Tan, Wei Wang, Bing Wang, 2016 .

Strain relaxation of germanium-tin (GeSn) fins

Y. Yeo, C. S. Tan, Shengqiang Xu, 2018 .

Enhanced Germanium-Tin P-Channel FinFET Performance using Post-Metal Anneal

Y. Yeo, C. S. Tan, Shengqiang Xu, 2018, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).

Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

Y. Yeo, D. Antoniadis, G. Han, 2013, IEEE Electron Device Letters.

High Performance Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate

X. Gong, Zhihong Liu, Kaizhen Han, 2019, IEEE Journal of the Electron Devices Society.

Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band.

Y. Yeo, C. S. Tan, Hong Wang, 2019, Optics express.

Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge1−xSnx) Fin Structure

Y. Yeo, X. Gong, E. Tok, 2017, Scientific Reports.

Germanium-Tin heterojunction phototransistor: Towards high-efficiency low-power photodetection in short-wave infrared range

Y. Yeo, G. Liang, X. Gong, 2016, 2016 IEEE Symposium on VLSI Technology.

Germanium-Tin on Silicon avalanche photodiode for short-wave infrared imaging

Y. Yeo, G. Liang, Qian Zhou, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As

Ivana, Y. Yeo, X. Gong, 2011 .

Fluorine Incorporation in HfAlO Gate Dielectric for Defect Passivation and Effect on Electrical Characteristics of In0.53Ga0.47As n-MOSFETs

Y. Yeo, Lanxiang Wang, X. Gong, 2010 .

A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity—Part II: Experimental Verification

Y. Yeo, X. Gong, Haiwen Xu, 2020, IEEE Transactions on Electron Devices.

Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range.

Y. Yeo, G. Liang, X. Gong, 2017, Optics express.

InAlP-Capped (100) Ge nFETs with 1.06 nm EOT: Achieving record high peak mobility and first integration on 300 mm Si substrate

Y. Yeo, Qian Zhou, C. Ko, 2014, 2014 IEEE International Electron Devices Meeting.

GeSn p-FinFETs with Sub-10 nm Fin Width Realized on a 200 mm GeSnOI Substrate: Lowest SS of 63 mV/decade, Highest Gm,int of 900 µS/µm, and High-Field µeff of 275 cm2/V•s

C. S. Tan, Shengqiang Xu, Yi-Chiau Huang, 2018, 2018 IEEE Symposium on VLSI Technology.

The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs

Y. Yeo, C. S. Tan, Shengqiang Xu, 2017, 2017 Symposium on VLSI Technology.

Investigation on temperature dependent DC characteristics of gallium oxide metal-oxide-semiconductor field-effect transistors from 25 °C to 300 °C

X. Gong, Zhihong Liu, Kaizhen Han, 2019, Applied Physics Express.

Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

Y. Yeo, E. Fitzgerald, K. Lee, 2016 .

Hybrid Design Using Metal–Oxide– Semiconductor Field-Effect Transistors and Negative-Capacitance Field-Effect Transistors for Analog Circuit Applications

C. Heng, X. Gong, E. Kong, 2021, IEEE Transactions on Electron Devices.

In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric

Y. Yeo, X. Gong, Zhu Zhu, 2013 .

New materials for post-Si computing: Ge and GeSn devices

Krishna C. Saraswat, Shinichi Takagi, Xiao Gong, 2014 .

Thermal Stability and Sn Segregation of Low-Resistance Ti/p+-Ge0.95Sn0.05 Contact

X. Gong, Kaizhen Han, Haiwen Xu, 2019, IEEE Electron Device Letters.

Formation of GeSn Multiple-Quantum-Well Microdisks on Insulating Platform Toward Lasing Applications

Y. Yeo, C. S. Tan, Shengqiang Xu, 2019, 2019 Conference on Lasers and Electro-Optics (CLEO).

Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon–germanium nanowires

Y. Yeo, Choun Pei Wong, X. Gong, 2010 .

High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate.

Hong Wang, Wei Wang, Shengqiang Xu, 2019, Optics express.

High-Efficiency Photo Detection at 2 μm Realized by GeSn/Ge Multiple-Quantum-Well Photodetectors with Photon-Trapping Microstructure

C. S. Tan, Xin Guo, Hao Zhou, 2020, 2020 Conference on Lasers and Electro-Optics (CLEO).

High Thermal Performance Ga2O3 on Insulator Field-Effect Transistors

X. Gong, Zhihong Liu, Kaizhen Han, 2019, 2019 Electron Devices Technology and Manufacturing Conference (EDTM).

Self-aligned contact metallization for III–V channel Field-Effect Transistors

Y. Yeo, X. Gong, S. Subramanian, 2012, 2012 12th International Workshop on Junction Technology.

MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS

E. Fitzgerald, S. Chua, K. Lee, 2017, IEEE Transactions on Semiconductor Manufacturing.

Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study

Wei Wang, Ran Cheng, Linfeng Sun, 2013 .

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform.

Wei Wang, Chuan Seng Tan, Shengqiang Xu, 2018, Optics express.

Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field- Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality

Y. Yeo, G. Liang, X. Gong, 2016, Design, Simulation and Construction of Field Effect Transistors.

Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width.

G. Liang, Shengqiang Xu, X. Gong, 2021, Nano letters.

First Demonstration of BEOL-Compatible Ferroelectric TCAM Featuring a-IGZO Fe-TFTs with Large Memory Window of 2.9 V, Scaled Channel Length of 40 nm, and High Endurance of 108 Cycles

K. Ni, X. Gong, Annie Kumar, 2021, 2021 Symposium on VLSI Technology.

Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique.

Wei Wang, Gengchiau Liang, Xiao Gong, 2015, Optics express.

Enabling low power and high speed OEICs: First monolithic integration of InGaAs n-FETs and lasers on Si substrate

Y. Yeo, D. Antoniadis, G. Liang, 2017, 2017 Symposium on VLSI Technology.

Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.

Wei Wang, Shengqiang Xu, Xiao Gong, 2017, Optics express.

Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge1−xSnx) Fin Structure

Y. Yeo, X. Gong, E. Tok, 2017, Scientific Reports.

A Physics-Based Compact Model for Transition-Metal Dichalcogenides Transistors With the Band-Tail Effect

A. Thean, G. Liang, X. Gong, 2018, IEEE Electron Device Letters.

Demonstration of Ferroelectricity in Al-Doped HfO₂ With a Low Thermal Budget of 500 °C

X. Gong, Jiuren Zhou, Kaizhen Han, 2020, IEEE Electron Device Letters.

Temperature Dependence of Ferroelectricity in Al-Doped HfO₂ Featuring a High P_r of 23.7 C/cm²

Haibo Wang, X. Gong, Jiuren Zhou, 2020 .

Extraction of Polarization-Dependent Damping Constant for Dynamic Evaluation of Ferroelectric Films and Devices

Yang Li, Xiao Gong, Kaizhen Han, 2018, IEEE Electron Device Letters.

Band alignment study of lattice-matched In{sub 0.49}Ga{sub 0.51}P and Ge using x-ray photoelectron spectroscopy

X. Gong, S. Yoon, W. Loke, 2014 .

Evaluation of Negative Capacitance Ferroelectric MOSFET for Analog Circuit Applications

Yang Li, Xiao Gong, Yuye Kang, 2017, IEEE Transactions on Electron Devices.

Sub- $10^{-\textsf{9}}\,\,\Omega\cdot{\text{cm}}^{\textsf{2}}$ Specific Contact Resistivity (Down to $\textsf{4.4}\times\textsf{10}^{-\textsf{10}}\,\,\Omega\cdot\textsf{cm}^{\textsf{2}}$ ) for Metal Contact on Ga and Sn Surface-Segregated GeSn Film

Y. Yeo, Shengqiang Xu, X. Gong, 2018, IEEE Transactions on Electron Devices.

Ultra-low specific contact resistivity (1.4 × 10−9 Ω·cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film

Y. Yeo, G. Liang, X. Gong, 2017 .

Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

Y. Yeo, G. Han, S. Su, 2013 .

Germanium–Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration

Wei Wang, Xiao Gong, Yee-Chia Yeo, 2013, IEEE Transactions on Electron Devices.

Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS

Y. Yeo, W. Wang, B. Liu, 2013, IEEE Transactions on Electron Devices.

Etching of germanium-tin using ammonia peroxide mixture

Y. Yeo, G. Liang, X. Gong, 2015 .

High-Performance Germanium $\Omega$ -Gate MuGFET With Schottky-Barrier Nickel Germanide Source/Drain and Low-Temperature Disilane-Passivated Gate Stack

Bin Liu, Xiao Gong, Yee-Chia Yeo, 2012, IEEE Electron Device Letters.

High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications

Y. Yeo, W. Wang, B. Liu, 2013, 2013 IEEE International Electron Devices Meeting.

Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)

Y. Yeo, K. Bourdelle, B. Nguyen, 2013, 2013 IEEE International Electron Devices Meeting.

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

K. Ni, X. Gong, S. Samanta, 2021, Advanced Electronic Materials.

Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate

Y. Yeo, C. S. Tan, Shengqiang Xu, 2018, IEEE Transactions on Electron Devices.

First Demonstration of Oxide Semiconductor Nanowire Transistors: a Novel Digital Etch Technique, IGZO Channel, Nanowire Width Down to ~20 nm, and Ion Exceeding 1300 μA/μm

A. Thean, X. Gong, Jiuren Zhou, 2021, 2021 Symposium on VLSI Technology.

Growth of InGaAs-channel transistor layers on large-scale Si wafers for HeteroIntegration with Si CMOS

C. S. Tan, E. Fitzgerald, S. Chua, 2017 .

Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

A. Thean, Shengqiang Xu, X. Gong, 2020, IEEE Electron Device Letters.

Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling With Dynamic Response and Multi-Domain Characteristics

G. Liang, X. Gong, Xiaolin Wang, 2022, IEEE Electron Device Letters.

Single Crystalline Germanium-Lead Alloy on Germanium Substrate Formed by Pulsed Laser Epitaxy

Y. Yeo, Chunlei Zhan, Qian Zhou, 2014 .

Germanium–Tin $\hbox{n}^{+}\hbox{/p}$ Junction Formed Using Phosphorus Ion Implant and 400 $^{\circ} \hbox{C}$ Rapid Thermal Anneal

Y. Yeo, W. Wang, B. Liu, 2012, IEEE Electron Device Letters.

A surface potential based compact model for two-dimensional field effect transistors with disorders induced transition behaviors

Yang Li, Kah-Wee Ang, Gengchiau Liang, 2018, Journal of Applied Physics.

Design and Evaluation of a Novel and Ultra-Compact Fully-TGV-based Self-Shielding Bandpass Filter for 5G Applications

Yingtao Ding, Zhiming Chen, Lei Xiao, 2019, 2019 International 3D Systems Integration Conference (3DIC).

High Field Temperature-Independent Field-Effect Mobility of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors: Understanding the Importance of Equivalent-Oxide-Thickness Downscaling

Shengqiang Xu, X. Gong, S. Samanta, 2021, IEEE Transactions on Electron Devices.

Al-doped and Deposition Temperature-engineered HfO2 Near Morphotropic Phase Boundary with Record Dielectric Permittivity (~68)

Haibo Wang, X. Gong, Jiuren Zhou, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

Back-End-of-Line Compatible Fully Depleted CMOS Inverters Employing Ge p-FETs and α-InGaZnO n-FETs

X. Gong, Annie Kumar, Jiuren Zhou, 2021, IEEE Electron Device Letters.

Ge0.9Sn0.1 p-i-n Photodiode with Record-High Responsivity at Two-Micron-Wavelength

Y. Yeo, Xin Guo, Hong Wang, 2018, 2018 IEEE 15th International Conference on Group IV Photonics (GFP).

Germanium-based transistors for future high performance and low power logic applications

Xiao Gong, Yee-Chia Yeo, Georgios Vellianitis, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Kinetics of plasma oxidation of germanium-tin (GeSn)

Y. Yeo, Wei Wang, X. Gong, 2017 .

Single Crystalline Germanium-Lead Formed by Laser-Induced Epitaxy

Y. Yeo, Qian Zhou, X. Gong, 2016 .

Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors

J. Witzens, E. O’Reilly, X. Gong, 2021, Applied Physics Letters.

Theoretical investigation of metal/n-Ge1−xSnx (0 ≤ x < 0.11) contacts using transfer matrix method

X. Gong, D. Lei, Ying Wu, 2019, Journal of Applied Physics.

Germanium-tin on Silicon p-i-n photodiode with low dark current due to sidewall surface passivation

Wei Wang, Qian Zhou, Gengchiau Liang, 2015, 2015 Optical Fiber Communications Conference and Exhibition (OFC).

Germanium-Tin on Si Avalanche Photodiode: Device Design and Technology Demonstration

Wei Wang, Gengchiau Liang, Xin Xu, 2015, IEEE Transactions on Electron Devices.

Gate-all-around CMOS (InAs n-FET and GaSb p-FET) based on vertically-stacked nanowires on a Si platform, enabled by extremely-thin buffer layer technology and common gate stack and contact modules

Gengchiau Liang, Xiao Gong, Yee-Chia Yeo, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

(Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design

G. Ng, L. Peh, C. S. Tan, 2016 .

Metal/P-type GeSn Contacts with Specific Contact Resistivity down to 4.4×10−10 Ω-cm2

Y. Yeo, Shengqiang Xu, X. Gong, 2018, 2018 IEEE Symposium on VLSI Technology.

(Invited) Germanium-Tin P-Channel Field-Effect Transistor with Low-Temperature Si2H6 Passivation

Y. Yeo, Yue Yang, Lanxiang Wang, 2014 .

Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology

Bin Liu, Ran Cheng, Xiao Gong, 2013, 2013 Symposium on VLSI Technology.

Silane and Ammonia Surface Passivation Technology for High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs

Y. Yeo, Xinke Liu, X. Gong, 2010, IEEE Transactions on Electron Devices.

Reduction of Off-State Leakage Current in In0.7Ga0.3As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contact Metallization

Ivana, Y. Yeo, C. Wann, 2011 .

In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process

Y. Yeo, C. Wann, Qian Zhou, 2011, Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.

III–V MOSFETs with a new self-aligned contact

Chun-Yen Chang, Xiao Gong, Yee-Chia Yeo, 2010, 2010 Symposium on VLSI Technology.

Elimination of the Parasitic Metal Resistance in Transmission Line Model for Extraction of Ultralow Specific Contact Resistivity

Y. Yeo, X. Gong, Haiwen Xu, 2019, IEEE Transactions on Electron Devices.

Toward Conformal Damage-Free Doping With Abrupt Ultrashallow Junction: Formation of Si Monolayers and Laser Anneal as a Novel Doping Technique for InGaAs nMOSFETs

Y. Yeo, B. Liu, P. Guo, 2014, IEEE Transactions on Electron Devices.

Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs

Y. Yeo, B. Liu, P. Guo, 2013, 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

In0.53Ga0.47As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Shallow Metallic Source and Drain Extensions and Offset N+ Doped Regions for Leakage Suppression

X. Gong, Zhu Zhu, Ivana Yeo, 2012 .

Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET With Tapered Source/Drain Structure

Kain Lu Low, Y. Yeo, G. Liang, 2016, IEEE Transactions on Electron Devices.

An Improved Methodology for Accurate Extraction of Ultra-Low Specific Contact Resistivity of Alloyed Contacts Using Nanoscale Transmission Line Method

Y. Yeo, X. Gong, Wei Wang, 2018, IEEE Electron Device Letters.

Thermal stability of germanium-tin (GeSn) fins

Y. Yeo, C. S. Tan, K. Lee, 2017 .

Record low specific contact resistivity (1.2×10−9 Ω-cm2) for P-type semiconductors: Incorporation of Sn into Ge and in-Situ Ga doping

Y. Yeo, G. Liang, X. Gong, 2017, 2017 Symposium on VLSI Technology.

Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing

Y. Yeo, B. Liu, G. Han, 2013 .