H. Feick

发表

Room-Temperature Ultraviolet Nanowire Nanolasers

Yiying Wu, P. Yang, E. Weber, 2001, Science.

Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport

Eicke R. Weber, Henning Feick, Peidong Yang, 2001 .

Pion-induced damage in silicon detectors

A. Chilingarov, C. Gössling, G. Taylor, 1996 .

ATLAS: Technical proposal for a general-purpose p p experiment at the Large Hadron Collider at CERN

W. W. Armstrong, A. I. Popov, J. R. Hubbard, 1994 .

Damage-induced surface effects in silicon detectors

G. Lutz, R. Richter, T. Rohe, 1996 .

Long term damage studies using silicon detectors fabricated from different starting materials and irradiated with neutrons, protons, and pions

H. Feick, M. Moll, E. Fretwurst, 1996 .

COMPARISON OF DEFECTS PRODUCED BY FAST NEUTRONS AND 60CO-GAMMAS IN HIGH-RESISTIVITY SILICON DETECTORS USING DEEP-LEVEL TRANSIENT SPECTROSCOPY

H. Feick, M. Moll, E. Fretwurst, 1997 .

AFM study of lattice matched and strained InGaAsN layers on GaAs

M. Cich, P. Specht, E. Weber, 2001 .

Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN

Qing Yang, E. Weber, H. Feick, 2004 .

Radiation studies and operational projections for silicon in the ATLAS inner detector

Shaun Roe, Eckhart Fretwurst, T. Schulz, 1995 .

Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experiments

C. Gössling, H. Feick, M. Glaser, 1994 .

Recent results of radiation damage studies in silicon

G. Moorhead, P. Jarron, R. Bonino, 1994 .

Lattice-matched HfN buffer layers for epitaxy of GaN on Si

Qing Yang, E. Weber, H. Feick, 2002 .

Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors

S. Nozaki, M. Micovic, E. Weber, 2001 .

Luminescence energy and carrier lifetime as a function of applied biaxial strain in InGaN/GaN quantum-well structures

E. Weber, H. Feick, N. Gardner, 2002 .

Observation of a bistable defect generated and activated by heat treatments in irradiated high resistivity silicon detectors

H. Feick, M. Moll, E. Fretwurst, 1995 .

Modeling OFF-state harmonics in MOS transistors used as RF switches

H. Feick, M. Bartels, Dennis Niemeier, 2020 .

Correlation between a deep hole trap and the reverse annealing effect in neutron-irradiated silicon detectors 1 This research was supported by the BMBF under contract 05 7HH 17 I. 1

H. Feick, M. Moll, E. Fretwurst, 1998 .

Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7/spl times/10/sup 15/ n/cm/sup 2/

H. Kraner, H. Feick, G. Ghislotti, 1995, 1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record.

Some recent results of the silicon detector radiation damage study by the RD2 collaboration

G. Moorhead, P. Jarron, R. Bonino, 1995 .

Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain

H. Amano, I. Akasaki, E. Weber, 2000 .

Formation of copper precipitates in silicon

A. Istratov, E. Weber, H. Feick, 1999 .

Electrical and optical properties of carbon-doped GaN grown by MBE on MOCVD GaN templates using a CCl4 dopant source

E. Weber, H. Feick, Yeonjoon Park, 2002 .

Room-Temperature Ultraviolet Nanowire Nanolasers.

Eicke R. Weber, Henning Feick, Richard E. Russo, 2001 .

Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration

P. Ciampolini, Shaun Roe, Bruno Sopko, 2001 .

Developments for radiation hard silicon detectors by defect engineering—results by the CERN RD48 (ROSE) Collaboration

P. Ciampolini, Francesca Campabadal, Giorgio Fallica, 2001 .

Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN

Qing Yang, E. Weber, H. Feick, 2003 .

Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain

Eicke R. Weber, Henning Feick, Michael J. Cich, 2003 .

Radiation induced bulk damage in silicon detectors

Geoffrey Taylor, Alexandre Chilingarov, Eckhart Fretwurst, 1996 .

E. Weber, H. Feick, Qing Yang, 2006 .

Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN

Qing Yang, Eicke R. Weber, Henning Feick, 2003 .

Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth

F. Cerrina, E. Weber, H. Feick, 2001 .

ANALYSIS OF TSC SPECTRA MEASURED ON SILICON PAD DETECTORS AFTER EXPOSURE TO FAST NEUTRONS

H. Feick, M. Moll, E. Fretwurst, 1997 .

Prototypes for the ATLAS silicon outer tracker: Signal processing and readout

G. Moorhead, P. Jarron, A. Clark, 1994 .

Defects in FZ-silicon after neutron irradiation—A positron annihilation and photoluminescence study

H. Feick, R. Krause-Rehberg, C. Davia, 2004 .

Correlation of radiation damage effects in high resistivity silicon detectors with results from deep level spectroscopy

H. Feick, M. Moll, E. Fretwurst, 1996, 1996 IEEE Nuclear Science Symposium. Conference Record.

Relation between Structural Parameters and the Effective Electron–Hole Separation in InGaN/GaN Quantum Wells

J. Speck, W. Götz, E. Weber, 2001 .

The ROSE Collaboration (R&d On Silicon for future Experiments)

R. Bates, V. O’Shea, W. Boer, 2000 .

Investigation of damage-induced defects in silicon by TCT☆

Zheng Li, E. Fretwurst, G. Lindström, 1997 .

Neutron induced defects in silicon detectors characterized by DLTS and TSC methods

Eckhart Fretwurst, T. Schulz, Michael Moll, 1996 .

Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2)

H. Kraner, B. Nielsen, H. Feick, 1996 .

Long Term Reverse Annealing In Silicon Detectors And First Results Of DLTS - And Current Pulse Shape Measurements

H. Feick, E. Fretwurst, T. Schulz, 1993, 1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference.

Metal Nanowire Formation Using Mo 3 Se 3 -as Reducing and Sacrificing Templates

J. Tarascon, F. Raymo, E. Joselevich, 2022 .

Subwavelength Metal-optic Semiconductor Nanopatch Lasers References and Links

Ming C. Wu, Charles M. Lieber, P. J. van Veldhoven, 2022 .

Generation-recombination low-frequency noise signatures in GaAs metal–semiconductor field-effect transistors on laterally oxidized AlAs

M. Cich, E. Weber, H. Feick, 2003 .

Revival of grayscale technique in power semiconductor processing under low-cost manufacturing constraints

Jens Schneider, Nicolo Morgana, Dieter Kaiser, 2018, European Mask and Lithography Conference.

3D lithography for implant applications

Jens Schneider, Dieter Kaiser, Henning Feick, 2013, 2013 International Semiconductor Conference Dresden - Grenoble (ISCDG).