Tj Tom Eijkemans

发表

Lasing in metallic-coated nanocavities

M. Smit, E. J. Geluk, B. Smalbrugge, 2007 .

Lithographic and optical tuning of InGaAsP membrane photonic crystal nanocavities with embedded InAs quantum dots

Andrea Fiore, Fouad Karouta, R Richard Nötzel, 2009 .

Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing

R Richard Nötzel, Jh Joachim Wolter, Tj Tom Eijkemans, 2003 .

InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers

Qian Gong, R Richard Nötzel, van Pj René Veldhoven, 2004 .

Self Assembled InAs/InP Quantum Dots for Telecom Applications in the 1.55 µm Wavelength Range: Wavelength Tuning, Stacking, Polarization Control, and Lasing

M. Smit, E. J. Geluk, B. Satpati, 2006 .

Stacking and polarization control of wavelength-tunable (1.55 mum region) InAs/InGaAsP/InP (100) quantum dots

Sanguan Anantathanasarn, R Richard Nötzel, Jh Joachim Wolter, 2006 .

Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

Qian Gong, R Richard Nötzel, van Pj René Veldhoven, 2004 .

Wavelength-tunable (1.55‐μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy

R Richard Nötzel, van Pj René Veldhoven, Jh Joachim Wolter, 2005 .

Lateral wavelength control of InAs∕InGaAsP∕InP (100) quantum dots in the 1.55μm region by selective-area metal organic vapor-phase epitaxy

S. Anantathanasarn, R. Nötzel, T. D. Vries, 2006 .

Anomalous temperature dependence of the carrier capture time into InAs/GaAs quantum dots grown on a quantum wire array

Jem Jos Haverkort, R. Nötzel, Tj Tom Eijkemans, 2008 .

Dichroic reflection of InAs∕GaAs quantum dots

Jem Jos Haverkort, R. Nötzel, Tj Tom Eijkemans, 2005 .

Shape transition from InAs quantum dash to quantum dot on InP(3 1 1)A

R. Nötzel, Q. Gong, Tj Tom Eijkemans, 2005 .

Temperature-Dependent Photoluminescence of Self-Assembled (In,Ga)As Quantum Dots on GaAs (100): Carrier Redistribution through Low-Energy Continuous States

R. Nötzel, Q. Gong, Tj Tom Eijkemans, 2005 .

Direct imaging of self-organized anisotropic strain engineering for improved one-dimensional ordering of (In,Ga)As quantum dot arrays

R. Nötzel, Tj Tom Eijkemans, J. Wolter, 2004 .

One-dimensional single (In,Ga)As quantum dot arrays formed by self-organized anisotropic strain engineering

R. Nötzel, Tj Tom Eijkemans, J. Wolter, 2004 .

Role of In desorption for formation of self-organized (In,Ga)As quantum wires on GaAs(100) during superlattice formation

R. Nötzel, Tj Tom Eijkemans, J. Wolter, 2003 .

Effect of annealing on formation of self-assembled (In,Ga)As quantum wires on GaAs (100) by molecular beam epitaxy

R. Nötzel, Tj Tom Eijkemans, J. Wolter, 2002 .

Carrier dynamics of LT InAs/GaAs QDs using Time Resolved Differential Reflectivity

Jem Jos Haverkort, R. Nötzel, Tj Tom Eijkemans, 2005 .

Power dependent photoluminescence of lateral quantum dot molecules: Indication of extended electron states

R. Nötzel, Tj Tom Eijkemans, J. Wolter, 2006 .

Large redshift in photoluminescence of p-doped InP nanowires induced by Fermi-level pinning

E. Bakkers, Tj Tom Eijkemans, A. Roest, 2006 .

Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering: A self-ordered quantum dot crystal

R. Nötzel, Tj Tom Eijkemans, V. Otten, 2008 .

Self-organized strain engineering on GaAs (311)B: Template formation for quantum dot nucleation control

R. Nötzel, Q. Gong, Tj Tom Eijkemans, 2002 .

Leveling and rebuilding: An approach to improve the uniformity of (In,Ga)As quantum dots

R. Nötzel, Q. Gong, Tj Tom Eijkemans, 2002 .

Photoluminescence enhancement in thin films of PbSe nanocrystals

H. Salemink, Tj Tom Eijkemans, R. Janssen, 2008 .

Formation of columnar (In,Ga)As quantum dots on GaAs(100)

Qian Gong, R Richard Nötzel, P Peter Offermans, 2004 .

High Quality SiO2-like Layers by Large Area Atmospheric Pressure Plasma Enhanced CVD: Deposition Process Studies by Surface Analysis

S. A. Starostin, Tj Tom Eijkemans, M. Sanden, 2009 .

Formation of linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering and their optical properties

R. Nötzel, Tj Tom Eijkemans, V. Otten, 2007 .

Surface morphology induced InAs quantum dot or dash formation on InGaAsP/InP (100)

R. Nötzel, Tj Tom Eijkemans, V. Otten, 2007 .

InAs/InGaAsP sidewall quantum dots on shallow-patterned InP (311)A

van Pj René Veldhoven, R. Nötzel, Tj Tom Eijkemans, 2006 .

(In,Ga)As sidewall quantum wires on shallow-patterned InP (311)A

van Pj René Veldhoven, R. Nötzel, P. Offermans, 2005 .

Photoluminescence from low temperature grown InAs∕GaAs quantum dots

Jem Jos Haverkort, R. Nötzel, Tj Tom Eijkemans, 2007 .

Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

Y Yohan Barbarin, E. Smalbrugge, R Richard Nötzel, 2006 .

Distribution control of 1.55 μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy

E. J. Geluk, B. Smalbrugge, R. Nötzel, 2009 .

1.55 μm InAs quantum dot distribution on truncated InP pyramids and regrowth by selective area epitaxy

Hao Wang, E. J. Geluk, B. Smalbrugge, 2009 .

Submicron active-passive integration with position and number controlled InAs∕InP (100) quantum dots (1.55μm wavelength region) by selective-area growth

S. Anantathanasarn, R. Nötzel, T. D. Vries, 2007 .

Complex quantum dot arrays formed by combination of self-organized anisotropic strain engineering and step engineering on shallow patterned substrates

R. Nötzel, Tj Tom Eijkemans, J. Wolter, 2005 .

(In,Ga)As Quantum Dot Array Formation by Self-Organized Anisotropic Strain Engineering of an (In,Ga)As/GaAs Quantum Wire Template: Shallow-Pattern Effects

R. Nötzel, Tj Tom Eijkemans, J. Wolter, 2003 .

Formation of InAs quantum dot arrays on GaAs (100) by self-organized anisotropic strain engineering of a (In,Ga)As superlattice template

R Richard Nötzel, R. Nötzel, Tj Tom Eijkemans, 2002 .

Optical properties of stacked InGaAs sidewall quantum wires in InGaAsP/InP

R. Nötzel, Tj Tom Eijkemans, J. Wolter, 2006 .

Formation of linear InAs/InGaAsP/InP (1 0 0) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy

R. Nötzel, Tj Tom Eijkemans, van Fwm Frank Otten, 2009 .

Polarization control of gain of stacked InAs∕InP (100) quantum dots at 1.55μm: Interplay between ground and excited state transitions

E. Smalbrugge, R Richard Nötzel, P. J. van Veldhoven, 2008 .

Transport and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures subjected to CH4/H2 reactive ion etching

Tj Tom Eijkemans, J. Wolter, M. Rossum, 1993 .

Influence of CH4/H2 reactive ion etching on electrical and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures

Tj Tom Eijkemans, J. Wolter, M. Rossum, 1995 .

Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

van Pj René Veldhoven, Tj Tom Eijkemans, R. Nötzel, 2004 .