N. Kobayashi

发表

High electron concentrations in Si‐doped AlN/AlGaN superlattices with high average Al content of 80%

Y. Taniyasu, M. Kasu, K. Kumakura, 2003 .

Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x<0.2)

K. Kumakura, T. Makimōto, N. Kobayashi, 2000 .

Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors

H. Gotoh, T. Saitoh, N. Kobayashi, 2003 .

Self-Limited Facet Growth for GaAs Tetrahedral Quantum Dots

S. Ando, T. Honda, N. Kobayashi, 1993 .

Pnp AlGaN/GaN Heterojunction Bipolar Transistors Operating at 300 °C

K. Kumakura, T. Makimōto, N. Kobayashi, 2002 .

High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN

K. Kumakura, T. Makimōto, N. Kobayashi, 2003 .

Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect

T. Saitoh, N. Kobayashi, N. Maeda, 1999 .

Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region

Naoki Kobayashi, Toshio Nishida, Hisao Saito, 2001 .

High-color-rendering light sources consisting of a 350-nm ultraviolet light-emitting diode and three-basal-color phosphors

Naoki Kobayashi, Toshio Nishida, Tomoyuki Ban, 2003 .

Reduction of threading dislocations in crack-free AlGaN by using multiple thin SixAl1−xN interlayers

Y. Taniyasu, M. Kasu, T. Makimōto, 2003 .

Field-emission characteristics and large current density of heavily Si-doped AlN and AlxGa1−xN (0.38⩽x<1)

M. Kasu, N. Kobayashi, 2001 .

Single-photon emission in telecommunication band from an InAs quantum dot in a pillar structure

I. Suemune, H. Kumano, N. Kobayashi, 2013, 2013 International Conference on Indium Phosphide and Related Materials (IPRM).

In Situ Optical Monitoring of the GaAs Growth Process in MOCVD

T. Makimōto, N. Kobayashi, Y. Horikoshi, 1990 .

Highly efficient AlGaN-based UV-LEDs and their application as visible light sources

Naoki Kobayashi, Toshio Nishida, N. Kobayashi, 2002, SPIE OPTO.

Dielectric changes of GaAs surfaces determined using the Kramers-Kronig analysis of surface photoabsorption spectra

Yoshio Watanabe, N. Kobayashi, K. Uwai, 1998 .

Growth of AlxGa1−xN and fabrication of AlGaN/GaN superlattice by RF-source MBE

N. Kobayashi, Y. Hirayama, N. Maeda, 1998 .

Surface dielectric change of GaAs determined from surface photo-absorption spectra

N. Kobayashi, K. Uwai, 1996 .

Flow-Rate Modulation Epitaxy of GaAs

T. Makimōto, N. Kobayashi, Y. Horikoshi, 1985 .

1.5 µm InGaAsP/InP DH Laser with Optical Waveguide Structure

N. Kobayashi, Y. Horikoshi, 1979 .

Room Temperature Operation of the InGaAsSb/AlGaAsSb DH Laser at 1.8 µm Wavelength

N. Kobayashi, Y. Horikoshi, C. Uemura, 1980 .

Selective area metalorganic chemical vapor deposition growth for hexagonal-facet lasers

S. Ando, N. Kobayashi, H. Ando, 1994 .

In-situ optical monitoring of the decomposition process of gaseous sources in metal-organic chemical vapor deposition and atomic layer epitaxy

N. Kobayashi, Y. Horikoshi, Y. Kobayashi, 1992 .

Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light

N. Kobayashi, Y. Kobayashi, T. Akasaka, 1998 .

Influence of epitaxy on the surface conduction of diamond film

Naoki Kobayashi, A. Aleksov, Toshiki Makimoto, 2004 .

High mobility and high crystalline-quality chemical-vapor-deposition grown homoepitaxial diamond

M. Kasu, N. Kobayashi, 2003 .

Carbon Atomic Layer Doping in AlGaAs by Metalorganic Chemical Vapor Deposition and Its Application to a P-Type Modulation Doped Structure

T. Makimōto, N. Kobayashi, T. Makimoto, 1993 .

Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy

T. Makimōto, N. Kobayashi, Chengxin Wang, 2004 .

Polarization Charge Densities at p-GaN/n-AlGaN Heterojunctions Evaluated by Capacitance–Voltage Characteristics

K. Kumakura, T. Makimōto, N. Kobayashi, 2002 .

X‐ray diffraction study of annealed ZnSe/GaAs superlattices

N. Kobayashi, S. Zhang, 1992 .

High hole mobility (1300 cm2/V s) at room temperature in hydrogen-terminated (001) diamond

M. Kasu, N. Kobayashi, 2002 .

Common-emitter current-voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer

K. Kumakura, T. Makimōto, N. Kobayashi, 2002 .

Lattice parameters of wurtzite Al1−xSixN ternary alloys

Y. Taniyasu, M. Kasu, N. Kobayashi, 2001 .

Crystal Growth of CdSe Quantum Dots Adsorbed on Nanoparticle, Inverse Opal, and Nanotube TiO2 Photoelectrodes Characterized by Photoacoustic Spectroscopy

N. Kobayashi, Q. Shen, T. Toyoda, 2007 .

Photoacoustic and Photoelectrochemical Characterization of Inverse Opal TiO2 Sensitized with CdSe Quantum Dots

N. Kobayashi, Q. Shen, T. Toyoda, 2006 .

Semiconductor Materials for 2∼4 µm Region Optical Sources and Room Temperature Operation of InGaAsSb/AlGaAsSb DH Lasers

N. Kobayashi, Y. Horikoshi, C. Uemura, 1980 .

In situ monitoring and control of atomic layer epitaxy by surface photo-absorption

N. Kobayashi, Y. Kobayashi, 1993 .

Using Tertiary Butylamine for Nitrogen Doping during Migration-Enhanced Epitaxial Growth of ZnSe

N. Kobayashi, Suian Zhang, 1992 .

Spontaneous ridge-structure formation and large field emission of heavily Si-doped AlN

M. Kasu, N. Kobayashi, 2001 .

Large and stable field-emission current from heavily Si-doped AlN grown by metalorganic vapor phase epitaxy

M. Kasu, N. Kobayashi, 2000 .

In-situ monitoring of GaAs growth process in MOVPE by surface photo-absorption method

T. Makimōto, N. Kobayashi, Y. Horikoshi, 1991 .

Pseudoquaternary Phase Diagram Calculation of In1-xGaxAs1-ySby Quaternary System

N. Kobayashi, Y. Horikoshi, 1982 .

Spontaneous Ridge Formation and Its Effect on Field Emission of Heavily Si-Doped AlN

M. Kasu, N. Kobayashi, 2001 .

Surface diffusion of AlAs on GaAs in metalorganic vapor phase epitaxy studied by high‐vacuum scanning tunneling microscopy

M. Kasu, N. Kobayashi, 1995 .

Chemical-bonding structure of InP surface in MOVPE studied by surface photo-absorption

N. Kobayashi, Y. Kobayashi, 1995 .

Changes in Surface Morphology and Photoluminescence Spectrum during Photoelectrochemical Etching of (0001) n-GaN on Sapphire

N. Kobayashi, Koh Matsumoto, Y. Saito, 2010 .

Dye-Sensitization Observed in Photoelectrochemically Etched n-Type Gallium Nitride

N. Kobayashi, T. Gonda, Sadayuki Kikawa, 2010 .

Spin splitting in modulation-doped AlGaN/GaN two-dimensional electron gas

T. Saitoh, N. Kobayashi, N. Maeda, 2002 .

Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors

T. Saitoh, N. Kobayashi, N. Maeda, 1999 .

High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base

K. Kumakura, T. Makimōto, N. Kobayashi, 2001 .

Real time observation of surface dielectric responses of GaAs(001) using surface photo-absorption

N. Kobayashi, K. Uwai, 1994 .

Doping design of GaN‐based heterostructure field‐effect transistors with high electron density for high‐power applications

T. Saitoh, N. Kobayashi, T. Tawara, 2003 .

Enhancement of AsH3 decomposition on highly doped p-GaAs surfaces

N. Kobayashi, Y. Yamauchi, 1992 .

Two-dimensional electron gas transport properties in AlGaN/GaN heterostructure field-effect transistors designed for high-power applications

T. Saitoh, N. Kobayashi, T. Tawara, 2003 .

AlGaN/GaN Heterostructure Field-Effect Transistors with Back-Doping Design for High-Power Applications: High Current Density with High Transconductance Characteristics

T. Saitoh, N. Kobayashi, T. Tawara, 2002 .

AlGaN/GaN Heterostructure Field‐Effect Transistors with High Al Compositions Fabricated with Selective‐Area Regrowth

T. Saitoh, N. Kobayashi, N. Maeda, 2001 .

Back-Doping Design in AlGaN/GaN Heterostructure Field-Effect Transistors for High-Power Applications

T. Saitoh, N. Kobayashi, N. Maeda, 2001 .

High-Temperature Electron Transport Properties in AlGaN/GaN Heterostructure Field Effect Transistors

T. Saitoh, N. Kobayashi, N. Maeda, 2000 .

Vapor Epitaxy by Surface Photoabsorption Spectroscopy, Evaluations of

N. Kobayashi, 2001 .

Optical investigation of GaAs growth process in molecular beam epitaxy and migration-enhanced epitaxy

M. Kawashima, N. Kobayashi, Y. Horikoshi, 1991 .

Gate voltage dependence of subband structure in a two-dimensional electron gas in AlGaN/GaN heterostructures

T. Saitoh, N. Kobayashi, N. Maeda, 2002 .

Comparison of Forward and Reverse Reactions in Hydrogen Generation between GaN, InGaN, Nanocrystalline TiO2 and Pt Electrodes during Water Electrolysis

N. Kobayashi, J. Yamamoto, Y. Ban, 2008 .

Flat-band potentials of GaN and InGaN/GaN QWs by bias-dependent photoluminescence in electrolyte solution

N. Kobayashi, K. Wakao, J. Yamamoto, 2007 .

Growth of low dimensional structures for optical application

S. Ando, N. Kobayashi, Y. Horikoshi, 1995 .

Improved 2DEG mobility in selectively doped GaAs/N-AlGaAs grown by MOCVD using triethyl organometallic compounds

T. Fukui, N. Kobayashi, 1984 .

Surface Flattening of GaN by Selective Area Metalorganic Vapor Phase Epitaxy

S. Ando, N. Kobayashi, T. Akasaka, 1998 .

GaN-free transparent ultraviolet light-emitting diodes

Naoki Kobayashi, Toshio Nishida, Tomoyuki Ban, 2003 .

Liquid-Phase Epitaxial Growth of InGaAsSb/GaSb and InGaAsSb/AlGaAsSb DH Wafers

N. Kobayashi, Y. Horikoshi, C. Uemura, 1979 .

As and P Desorption from III-V Semiconductor Surface in Metalorganic Chemical Vapor Deposition Studied by Surface Photo-Absorption

N. Kobayashi, Y. Kobayashi, 1991 .

Vapor-solid distribution relation in MOCVD GaAsxP1−x and InAsxP1−x

T. Fukui, N. Kobayashi, 1985 .

Localized spins in partially carbonized polyparaphenylene

M. Dresselhaus, M. Matthews, N. Kobayashi, 1999 .

Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors

Naoki Kobayashi, Hideki Hasegawa, Takashi Fukui, 2007 .

Efficient Si Planar Doping in GaAs by Flow-Rate Modulation Epitaxy

T. Makimōto, N. Kobayashi, Y. Horikoshi, 1986 .

High-temperature electron transport properties in AlGaN/GaN heterostructures

Naoki Kobayashi, Tadashi Saitoh, Narihiko Maeda, 2001 .

Anisotropic surface morphology of GaAs (001) surfaces passivated with nitrogen radicals

M. Kasu, T. Makimōto, N. Kobayashi, 1996 .

Characterization of Conduction Band Offset in Nanocrystalline TiO2/p-InGaN for Application to Water Photolysis Using Visible Light

N. Kobayashi, J. Yamamoto, Y. Ban, 2008 .

Growth of ZnSe/GaAs Superlattices by Migration-Enhanced Epitaxy

N. Kobayashi, Y. Horikoshi, 1990 .

Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy

N. Kobayashi, F. Alexandre, J. Benchimol, 1987 .

Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

Naoki Kobayashi, Toshio Nishida, Hisao Saito, 2001 .

Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN(0.42⩽x<1)

Naoki Kobayashi, Makoto Kasu, Y. Taniyasu, 2002 .

Single-photon emission in telecommunication band from an InAs quantum dot grown on InP with molecular-beam epitaxy

Naoki Kobayashi, Masahide Sasaki, Kouichi Akahane, 2013 .

Surface photoabsorption monitoring of III–V and GaN MOVPE surfaces

N. Kobayashi, 1998 .

Influence of N2 carrier gas on surface stoichiometry in GaN MOVPE studied by surface photoabsorption

N. Kobayashi, Y. Kobayashi, 1998 .

Origin of surface reflectance spectrum during epitaxy

N. Kobayashi, Y. Kobayashi, K. Uwai, 1997 .

Chemical trend observed in anisotropic surface reflectance spectra of MOVPE by surface photoabsorption

N. Kobayashi, Y. Kobayashi, K. Uwai, 1997 .

SPA Monitoring of GaN Movpe Surface

N. Kobayashi, Y. Kobayashi, 1997 .

Structural transformation of As-stabilized surfaces caused by Ga-deposition detected by time-resolved surface photo-absorption

N. Kobayashi, K. Uwai, 1995 .

Dielectric response of As‐stabilized GaAs surfaces observed by surface photo‐absorption

N. Kobayashi, K. Uwai, 1994 .

In-Situ Control of Strained Heterostructure Growth

N. Kobayashi, Y. Kobayashi, 1994 .

In Situ Interface Control of Pseudomorphic InAs/InP Quantum Well Structure Growth by Surface Photo-Absorption

N. Kobayashi, Y. Kobayashi, 1992 .

Spectral Dependence of Optical Reflection during Flow-Rate Modulation Epitaxy of GaAs by the Surface Photo-Absorption Method

N. Kobayashi, Y. Horikoshi, 1990 .

Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method

T. Makimōto, N. Kobayashi, Y. Horikoshi, 1990 .

Optical Investigation on the Growth Process of GaAs during Migration-Enhanced Epitaxy

N. Kobayashi, Y. Horikoshi, 1989 .

Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAs

T. Makimōto, N. Kobayashi, T. Makimoto, 1985 .

Abrupt p‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy

T. Makimōto, N. Kobayashi, Y. Horikoshi, 1987 .

Flow‐rate modulation epitaxy of GaAs and AlGaAs

T. Makimōto, N. Kobayashi, Y. Horikoshi, 1989 .

Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale

M. Kasu, T. Makimōto, N. Kobayashi, 1997 .

Surface‐diffusion and step‐bunching mechanisms of metalorganic vapor‐phase epitaxy studied by high‐vacuum scanning tunneling microscopy

M. Kasu, N. Kobayashi, 1995 .

In-situ monitoring and control of surface processes in metalorganic vapor phase epitaxy by surface photo-absorption

N. Kobayashi, 1994 .

In-Situ Surface Photo-Absorption Study of Movpe Surface

N. Kobayashi, 1994 .

Scanning tunneling microscopy study of two-dimensional nuclei on GaAs grown by metalorganic chemical vapor deposition

M. Kasu, N. Kobayashi, 1994 .

Reduced damage of electron cyclotron resonance etching by In doping into p-GaN

K. Kumakura, T. Makimōto, N. Kobayashi, 2000 .

p-InGaN/n-GaN Heterojunction Diodes and their Application to Heterojunction Bipolar Transistors

K. Kumakura, T. Makimōto, N. Kobayashi, 2000 .

Low‐frequency resonant Raman scattering in AlAs‐GaAs atomic‐layer superlattices

N. Kobayashi, Y. Horikoshi, T. Toriyama, 1988 .

Lattice Vibration of Thin-Layered AlAs-GaAs Superlattices

N. Kobayashi, Y. Horikoshi, T. Toriyama, 1986 .

Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE

T. Makimōto, N. Kobayashi, H. Saito, 1997 .

Sharp photoluminescence lines from nitrogen atomic‐layer‐doped GaAs

T. Makimōto, N. Kobayashi, T. Makimoto, 1995 .

MOVPE growth of strained InGaAsN/GaAs quantum wells

T. Makimōto, N. Kobayashi, H. Saito, 1998 .

Submilliwatt operation of AlGaN-based ultraviolet light-emitting diode using short-period alloy superlattice

Naoki Kobayashi, Toshio Nishida, Hisao Saito, 2001 .

AlGaAs/GaAs heterojunction bipolar transistors with heavily C-doped base layers grown by flow-rate m

T. Ishibashi, Hiroshi Ito, T. Makimōto, 1989 .

Improved flatness in GaAs/AlGaAs heterointerfaces grown by flow-rate modulation epitaxy

N. Kobayashi, Y. Horikoshi, 1987 .

Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy

T. Makimōto, N. Kobayashi, Y. Horikoshi, 1986 .

Comparison between Atmospheric and Reduced Pressure GaAs MOCVD

T. Fukui, N. Kobayashi, Y. Horikoshi, 1982 .

Nitride Semiconductor Surfaces. In-Situ Monitoring of GaN MOVPE by Optical Reflectance.

N. Kobayashi, Y. Kobayashi, 2000 .

Effect of strain on source gas decomposition and group V desorption in metalorganic vapor phase epitaxy studied by surface photo-absorption

N. Kobayashi, Y. Kobayashi, 1994 .

Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs

T. Makimōto, N. Kobayashi, 1994 .

Enhancement of AsH/sub 3/ Decomposition on Highly Doped p-GaAs Surface Observed by Surface Photo-Aborption

N. Kobayashi, Y. Yamauchi, 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.

In-situ optical monitoring of pyrolysis process on substrate surface in GaAs MOCVD

N. Kobayashi, Y. Horikoshi, Y. Yamauchi, 1991 .

Pyrolysis of Trimethylgallium on (001) GaAs Surface Investigated by Surface Photo-Absorption

N. Kobayashi, Y. Horikoshi, 1991 .

Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption

T. Makimōto, N. Kobayashi, Y. Horikoshi, 1990 .

Surface kinetics of metalorganic vapor-phase epitaxy: surface diffusion, nucleus formation, sticking at steps

Naoki Kobayashi, Makoto Kasu, M. Kasu, 1997 .

Equilibrium multiatomic step structure of GaAs(001) vicinal surfaces grown by metalorganic chemical vapor deposition

M. Kasu, N. Kobayashi, 1993 .

Growth shape control of group-III nitrides by selective-area MOVPE

Naoki Kobayashi, Masami Kumagai, Tetsuya Akasaka, 1998, Other Conferences.

In-situ optical monitoring of surface morphology and stoichiometry during GaN metal organic vapor phase epitaxy

Naoki Kobayashi, N. Kobayashi, Y. Kobayashi, 2000 .

Short-Cavity Fabry-Perot Lasers Using Crystal Facets

S. Ando, N. Kobayashi, H. Ando, 1998 .

In situ observation of nitridation of GaAs (001) surfaces by infrared reflectance spectroscopy

N. Kobayashi, Y. Yamauchi, K. Uwai, 1996 .

Hydrogen adsorption on GaAs (001) surfaces observed by surface photoabsorption and reflectance difference spectroscopy

N. Kobayashi, K. Uwai, 1996 .

In Situ Monitoring of Adsorption and Desorption of Atomic Nitrogen on GaAs (001) and (111)A Surfaces

N. Kobayashi, Y. Yamauchi, K. Uwai, 1996 .

Nitridation of GaAs surfaces using nitrogen through a hot tungsten filament

T. Makimōto, N. Kobayashi, T. Makimoto, 1995 .

Hexagonal-Facet Laser with Optical Waveguides Grown by Selective Area Metalorganic Chemical Vapor Deposition

Naoki Kobayashi, Seigo Ando, Hiroaki Ando, 1995 .

Interface flattening and optical characteristics of GaAs/Al0.3Ga0.7As quantum wells grown on finite patterns on a GaAs(111)B substrate

N. Kobayashi, T. Nishida, 1998 .

Formation of a 100-µm-wide Stepfree GaAs (111)B Surface Obtained by Finite Area Metalorganic Vapor Phase Epitaxy

N. Kobayashi, T. Nishida, 1998 .

Formation of a step-free InAs quantum well selectively grown on a GaAs (111)B substrate

N. Kobayashi, T. Nishida, 1997 .

A step-free InAs quantum well selectively grown on a GaAs (111)B substrate

N. Kobayashi, T. Nishida, 1997 .

Step-Free Surface Grown on GaAs (111)B Substrate by Local Metalorganic Vapor Phase Epitaxy

N. Kobayashi, T. Nishida, 1997 .

Scanning tunneling microscopy observation of monolayer steps on GaAs(001) vicinal surfaces grown by metalorganic chemical vapor deposition

H. Yamaguchi, M. Kasu, N. Kobayashi, 1993 .

Surface Termination Effect on Reflectance Spectra of GaAs

N. Kobayashi, K. Uwai, 1997 .

Far-Infrared Magneto-Absorption of the Nonequilibrium Electron System in Indium Phosphide

T. Fukui, S. Yamada, N. Kobayashi, 1983 .

Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN

K. Kumakura, T. Makimōto, N. Kobayashi, 2004 .

Flat Surfaces and Interfaces in AlN/GaN Heterostructures and Superlattices Grown by Flow-Rate Modulation Epitaxy

N. Kobayashi, M. Hiroki, 2003 .

Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy

Naoki Kobayashi, Toshiki Makimoto, K. Kumakura, 2003 .

Common-emitter current–voltage characteristics of a pnp GaN bipolar junction transistor

K. Kumakura, T. Makimōto, N. Kobayashi, 2002 .

High current gains obtained by InGaN/GaN double heterojunction bipolar transistors

K. Kumakura, T. Makimōto, N. Kobayashi, 2001 .

High hole concentrations in Mg-doped InGaN grown by MOVPE

K. Kumakura, T. Makimōto, N. Kobayashi, 2000 .

Efficient Hole Generation above 1019 cm-3 in Mg-Doped InGaN/GaN Superlattices at Room Temperature

K. Kumakura, T. Makimōto, N. Kobayashi, 2000 .

Extremely strong and sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs, AlGaAs and AlGaAs/GaAs single quantum wells

T. Makimōto, N. Kobayashi, 1996 .

Hydrogen Evolution from p-GaN Cathode in Water under UV Light Irradiation

Naoki Kobayashi, N. Kobayashi, Toru Narumi, 2005 .

Growth and Characterization of Quantum Structures Grown by MOCVD

S. Ando, T. Makimōto, N. Kobayashi, 1994 .

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

Naoki Kobayashi, Hideki Hasegawa, Takashi Fukui, 2018 .

340–350 nm GaN‐free UV‐LEDs

N. Kobayashi, T. Nishida, T. Ban, 2003 .

Surface atomic processes during flow-rate modulation epitaxy

S. Ando, N. Kobayashi, Y. Horikoshi, 1997 .

Hexagonal facet laser with optical waveguides grown by flow-rate modulation epitaxy

S. Ando, N. Kobayashi, Y. Horikoshi, 1997 .

Recent Developments of Field-Emission Research. High Field-emission Current Density from Heavily Si-doped Aluminum Nitrides.

M. Kasu, N. Kobayashi, 2002 .

GaN hexagonal microprisms with smooth vertical facets fabricated by selective metalorganic vapor phase epitaxy

S. Ando, N. Kobayashi, Yoshihiro Kobayashi, 1997 .

Selective MOVPE of GaN and AlxGa1−xN with smooth vertical facets

S. Ando, N. Kobayashi, Y. Kobayashi, 1998 .

Room-Temperature Absorption Edge of InGaN/GaN Quantum Wells Characterized by Photoacoustic Measurement

N. Kobayashi, Q. Shen, T. Toyoda, 2008 .

Flat-Band Potentials of Ga-face and N-face in Free-Standing n-GaN Electrode and Their Effects on Water Electrolysis

N. Kobayashi, J. Yamamoto, Y. Ban, 2009 .

Step-flow MOVPE of GaN on SiC substrates

Naoki Kobayashi, Toshio Nishida, Narihiko Maeda, 1998 .

Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistors

Naoki Kobayashi, Masaaki Tomizawa, Toshio Nishida, 1998 .

Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament

N. Kobayashi, T. Makimoto, 1996 .

p-GaN Cathode Degradation Correlated with Hydrogen Passivation during Water Photolysis under UV Light

N. Kobayashi, K. Wakao, J. Yamamoto, 2007 .

Superior Pinch-Off Characteristics at 400°C in AlGaN/GaN Heterostructure Field Effect Transistors

Naoki Kobayashi, Tadashi Saitoh, Toshio Nishida, 1999 .

Piezoelectric effects on photoluminescence properties in 10-nm-thick InGaN quantum wells

Naoki Kobayashi, Tadashi Saitoh, Hideki Gotoh, 2003 .

Two-dimensional electron gas transport properties in AlGaN/GaN single- and double-heterostructure field effect transistors

T. Saitoh, N. Kobayashi, N. Maeda, 2001 .

Comparative Study of ZnSe Growth Rate by Metal Organic Molecular Beam Epitaxy Using Different Zn Sources

N. Kobayashi, Yoshihiro Kobayashi, Y. Shinoda, 1988 .

Intentional control of n-type conduction for Si-doped AlN and AlxGa1-xN with high Al content

Y. Taniyasu, M. Kasu, N. Kobayashi, 2002 .

Growth-Rate Self-Limitation Mechanism in InP Atomic Layer Epitaxy Studied by Surface Photo-Absorption

N. Kobayashi, Y. Kobayashi, 1992 .

Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x<0.3%)

N. Kobayashi, T. Nishida, H. Saito, 1997 .

Single quantum well photoluminescence in ZnSe/GaAs/AlGaAs grown by migration‐enhanced epitaxy

N. Kobayashi, 1989 .

Growth and characterization of thin ZnSe/GaAs/ZnSe quantum wells

N. Kobayashi, Y. Horikoshi, S. Zhang, 1992 .

346 nm Emission from AlGaN Multi-Quantum-Well Light Emitting Diode

Naoki Kobayashi, T. Nishida, N. Kobayashi, 1999 .

Resonant Raman effect in thin‐layered AlAs‐GaAs superlattices

N. Kobayashi, Y. Horikoshi, T. Toriyama, 1987 .

Electron spin resonance of polyparaphenylene‐based carbons

M. Dresselhaus, M. Matthews, N. Kobayashi, 1996 .

Surface diffusion kinetics of GaAs and AlAs metalorganic vapor-phase epitaxy

M. Kasu, N. Kobayashi, 1997 .

Erratum: ‘‘Surface‐diffusion and step‐bunching mechanisms of metalorganic vapor‐phase epitaxy studied by high‐vacuum scanning tunneling microscopy’’ [J. Appl. Phys. 78, 3026 (1995)]

M. Kasu, N. Kobayashi, 1996 .

Scanning Tunneling Microscopy Study of GaAs Step Structures on Vicinal Substrate Grown by Metalorganic Chemical Vapor Deposition

M. Kasu, N. Kobayashi, 1994 .

In-situ monitoring of GaN MOVPE by shallow-angle reflectance using ultraviolet light

N. Kobayashi, Y. Kobayashi, T. Akasaka, 1998 .

Ten-milliwatt operation of an AlGaN-based light emitting diode grown on GaN substrate

Naoki Kobayashi, T. Nishida, N. Kobayashi, 2001 .

Effect of thermal annealing on electrical properties in MBE-grown n-type GaN films

N. Kobayashi, Y. Hirayama, N. Maeda, 1998 .

Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field

K. Kumakura, N. Kobayashi, T. Makimoto, 1999 .

Structural and Optical Properties of AlGaInN/GaN Grown by MOVPE

N. Kobayashi, Y. Kobayashi, Y. Yamauchi, 2003 .

Metalorganic vapor phase epitaxy growth of AlGaN/GaN heterostructures on sapphire substrates

N. Kobayashi, M. Hiroki, N. Maeda, 2002 .

Dissipative Particle Dynamics Study for the Phase Separated Structures of Polymer Thin Film Caused by Solvent Evaporation

M. Doi, N. Kobayashi, H. Fukunaga, 2008 .

Fabrication of an InGaN multiple-quantum-well laser diode featuring high reflectivity semiconductor/air distributed Bragg reflectors

Naoki Kobayashi, Tadashi Saitoh, Toshio Nishida, 2002 .

Large electron field emission from high-quality heavily Si-doped AlN grown by MOVPE

M. Kasu, N. Kobayashi, 2000 .

Pyrolysis of Organo-As Precursors Studied by Surface Photo-Absorption

N. Kobayashi, Y. Yamauchi, 1991 .

MIGRATION-ENHANCED EPITAXY OF COMPOUND SEMICONDUCTORS

N. Kobayashi, Y. Horikoshi, 1990 .

Selective area metalorganic vapor phase epitaxy of thick crack-free GaN films on trenched SiC substrates

S. Ando, N. Kobayashi, T. Akasaka, 2001 .

Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors

T. Saitoh, N. Kobayashi, N. Maeda, 2000 .

Hall resistance hysteresis in AlGaN/GaN 2DEG

T. Saitoh, N. Kobayashi, N. Maeda, 2003 .

Step‐free surface grown on GaAs (111)B substrate by selective area metalorganic vapor phase epitaxy

N. Kobayashi, T. Nishida, 1996 .