D. Wickenden

发表

PZT MEMS for an Extremely Sensitive Magnetometer

J. Pulskamp, R. Polcawich, E. Zakar, 2003 .

A microelectromechanical‐based magnetostrictive magnetometer

R. B. Givens, R. Osiander, T. Kistenmacher, 1996 .

DEVELOPMENT OF THE JOHNS HOPKINS XYLOPHONE BAR MAGNETOMETER

R. B. Givens, Thomas J. Kistenmacher, Douglas A. Oursler, 1999 .

Heterodyne detection of alternating magnetic fields with a resonating xylophone bar magnetometer

J. L. Champion, Robert Osiander, R. B. Givens, 1999 .

Development of Miniature Magnetometers

Robert Osiander, Thomas J. Kistenmacher, Scott A. Ecelberger, 1997 .

Design and Properties of a Thin-Film, Mems-Based Magnetostrictive Magnetometer

R. B. Givens, R. Osiander, T. Kistenmacher, 1996 .

H, He, and N implant isolation of n‐type GaN

Steven C. Binari, K. Doverspike, G. Kelner, 1995 .

Cathodoluminescence, Photoluminescence, and Optical Absorbance Spectroscopy of Aluminum Gallium Nitride (Al_xGa_1−xN) Films

D. Wickenden, J. Lowney, L. Robins, 1998 .

Screen Printed Frequency-Selective Surfaces on Rigid, Flexible and Elastic Substrates

M. J. Fitch, T. Kistenmacher, D. Wickenden, 2006 .

Sol-Gel PZT for MEMS Applications

Madan Dubey, Eugene Zakar, Ronald G. Polcawich, 2002 .

Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates

R. W. Brander, D. Wickenden, B. Isherwood, 1971 .

Semiconductor devices : Moore marches on

D. Wickenden, 2008 .

Optical quenching of photoconductivity in GaN photoconductors

J. C. Chen, Rong Zhang, D. Wickenden, 1997 .

Optical Quenching of Photoconductivity in GaN Photo-conductors

J. C. Chen, Rong Zhang, D. Wickenden, 1997 .

Tunable Second-Harmonic Studies of Gan Films Near the Fundamental Bandedge

T. Kistenmacher, D. Wickenden, J. Miragliotta, 1994 .

Electroreflectance from Gallium Nitride Using Second-Harmonic Generation

D. Wickenden, J. Miragliotta, 1995 .

Microelectronic substrates for Optoelectronic packages

D. Wickenden, A. Francomacaro, S. Lehtonen, 2008 .

Comparison of Cross-Polarization Characteristics of Frequency-Selective Surfaces Composed of Square Split-Ring and Spiral Resonators

M. J. Fitch, T. Kistenmacher, D. Wickenden, 2006, 2006 IEEE Antennas and Propagation Society International Symposium.

Capless annealing of silicon implanted gallium arsenide

D. Wickenden, J. Grange, 1983 .

EXTENDED X-RAY ABSORPTION FINE STRUCTURE STUDY OF ALXGA(1-X)N FILMS

J. Woicik, D. Wickenden, K. Miyano, 1997 .

ELECTRON SPIN RESONANCE STUDY OF RADIATION-INDUCED CENTERS OF CHEMICAL ACTIVITY IN A SILICA--ALUMINA GEL.

D. Wickenden, Dennis K. Wickenden, Robert R. Hentz, 1969 .

METAL NITRIDE SEMICONDUCTORS FOR OPTICAL APPLICATIONS

T. Kistenmacher, A. Wickenden, D. Wickenden, 2015 .

X-ray absorption, glancing-angle reflectivity, and theoretical study of the N K- and Ga M{sub 2,3}-edge spectra in GaN

E. Gullikson, D. Wickenden, S. Rashkeev, 1997 .

Variation of photoluminescence with carrier concentration in GaN

R. D. Cunningham, R. W. Brander, D. Wickenden, 1972 .

High quality self‐nucleated AlxGa1−x N layers on (00.1) sapphire by low‐pressure metalorganic chemical vapor deposition

Joseph A. Miragliotta, Thomas J. Kistenmacher, Wayne A. Bryden, 1994 .

CHAPTER 8 – Nonlinear Optical Properties of Gallium Nitride

D. Wickenden, J. Miragliotta, 1999 .

Linear- and nonlinear-optical properties of GaN thin films

Joseph A. Miragliotta, Thomas J. Kistenmacher, Wayne A. Bryden, 1993 .

Characterization of GaN using thermally stimulated current and photocurrent spectroscopies and its application to UV detectors

J. C. Chen, D. Wickenden, Z. C. Huang, 1997 .

Micromachined polysilicon resonating xylophone bar magnetometer

J. L. Champion, Robert Osiander, R. B. Givens, 2003 .

Effect of Carrier Gas on the Surface Morphology and Mosaic Dispersion for GaN Films by Low-Pressure MOCVD

T. Kistenmacher, D. Wickenden, M. Hawley, 1995 .

Spatially resolved luminescence studies of defects and stress in aluminum gallium nitride films

D. Wickenden, L. Robins, 1997 .

THE EFFECT OF THERMAL ANNEALING ON GAN NUCLEATION LAYERS DEPOSITED ON (0001) SAPPHIRE BY METALORGANIC CHEMICAL VAPOR DEPOSITION

T. Kistenmacher, A. Wickenden, D. Wickenden, 1994 .

Transient photocurrent induced in gallium nitride by two‐photon absorption

D. Wickenden, J. Miragliotta, 1996 .

Gallium nitride formed by vapour deposition and by conversion from gallium arsenide

D. Wickenden, B. Richards, B. Isherwood, 1970 .

Preparation of single phase gallium nitride from single crystal gallium arsenide

D. Wickenden, B. Isherwood, 1970 .

Thermally Annealed GaN Nucleation Layers And The MOCVD Growth Of Si-Doped GaN Films On (00.1) Sapphire

T. Kistenmacher, D. Wickenden, J. Miragliotta, 1994 .

Investigation of the temperature dependent recombination processes in periodic four-narrow-asymmetric-coupled-quantum-well structures

J. Khurgin, D. Wickenden, Y. Ding, 1995 .

Self-Nucleated Thin Films of GaN and Al x Ga1−x N for Optoelectronic Devices: Structure and Morphology

T. Kistenmacher, D. Wickenden, 1996 .

Thermally annealed GaN nucleation layers and the device‐quality metal organic chemical vapor deposition growth of Si‐doped GaN films on (00.1) sapphire

T. Kistenmacher, D. Wickenden, J. Miragliotta, 1994 .

The Effect of Self Nucleation Layers on the Mocvd Growth of Gallium Nitride on Sapphire

T. Kistenmacher, A. Wickenden, D. Wickenden, 1991 .

Substrate Dependent Texture and Heteroepitaxy for Group IIIA Nitride Films by the X-Ray Precession Method

T. Kistenmacher, D. Wickenden, S. Ecelberger, 1990 .

Optical third-harmonic investigations of gallium nitride nucleation layers on sapphire

T. Kistenmacher, D. Wickenden, J. Miragliotta, 1994 .

Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition.

Olson, Freitas, Rowland, 1995, Physical review. B, Condensed matter.