E. J. Miller

发表

Measurement of polarization charge and conduction-band offset at InxGa1−xN/GaN heterojunction interfaces

Christiane Poblenz, James S. Speck, Edward T. Yu, 2004 .

Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope

Christiane Poblenz, James S. Speck, Edward T. Yu, 2002 .

Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors

Edward T. Yu, E. Yu, E. J. Miller, 2000 .

Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy

James S. Speck, Patrick Waltereit, Edward T. Yu, 2004 .

Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling

Christiane Poblenz, James S. Speck, Edward T. Yu, 2002 .

Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N∕GaN grown by molecular-beam epitaxy

Edward T. Yu, E. Yu, H. Zhang, 2006 .

Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy

Daniel M. Schaadt, James S. Speck, P. Waltereit, 2003 .

Modelling of electric fields in high-voltage x-ray devices

E. J. Miller, K. Kozaczek, N. Ma, 2019, Journal of Electrostatics.

Transient thermal modelling and validation in high-voltage x-ray sources

E. J. Miller, S. Morris, K. Kozaczek, 2019, Thermal Science and Engineering Progress.

An electrostatic study of curvature effects on electric field stress in high voltage differentials

E. J. Miller, K. Kozaczek, N. Ma, 2019, Journal of Electrostatics.

Lateral variations in threshold voltage of an AlxGa1−xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy

E. Yu, E. J. Miller, J. Redwing, 2001 .

Quantitative analysis of nanoscale electronic properties in an AlxGa1−xN/GaN heterostructure field-effect transistor structure

E. Yu, E. J. Miller, J. Redwing, 2001 .

Influence of the dipole interaction energy on clustering in InxGa1−xN alloys

E. Yu, E. J. Miller, 2001 .

Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor

E. Yu, P. Asbeck, H. Wieder, 2000 .

Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment - eScholarship

E. Yu, J. Speck, E. J. Miller, 2003 .

Analysis of interface electronic structure in InxGa1−xN/GaN heterostructures

E. Yu, J. Speck, H. Zhang, 2004 .