V. Kümmler

发表

Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers

Werner Wegscheider, Alfred Lell, Ulrich T. Schwarz, 2004 .

Influence of the carrier density on the optical gain and refractive index change in InGaN laser structures

A. Lell, V. Härle, V. Kümmler, 2003 .

Systematics of Optical Gain in GaInN/GaN Laser Structures

A. Weimar, S. Bader, A. Lell, 2001 .

Laser Diode Facet Degradation Study

A. Lell, U. Schwarz, V. Härle, 2003 .

Low Resistance Non-Transparent ohmic Pt-contacts on p-GaN

A. Weimar, S. Bader, G. Brüderl, 2001 .

Influence of the Transverse and Lateral Waveguide on the Far Field Pattern in GaN Based Laser Structures

A. Weimar, S. Bader, A. Lell, 2001 .

Facet degradation of GaN heterostructure laser diodes

Alfred Lell, Ulrich T. Schwarz, V. Kümmler, 2005 .

Gradual facet degradation of (Al, In)GaN quantum well lasers

A. Lell, U. Schwarz, V. Härle, 2004 .

Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers

Werner Wegscheider, Alfred Lell, Ulrich T. Schwarz, 2003 .

Degradation Analysis of InGaN Laser Diodes

Werner Wegscheider, Alfred Lell, Ulrich T. Schwarz, 2002 .