Tongjun Yu

发表

Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift‐off

Z. J. Yang, Tongjun Yu, Zilan Li, 2004 .

Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition

Z. J. Yang, L. Sang, Tongjun Yu, 2008 .

Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes.

Xinjuan Chen, Xiangning Kang, Bo Shen, 2016, Optics express.

Junction temperature and reliability of high-power flip-chip light emitting diodes

Guoyi Zhang, Huapu Pan, Zhizhong Chen, 2007 .

Multi-chip dynamic white light emitting diode with high level photobiological safety and good color fidelity

Zhizhong Chen, Tongjun Yu, Shunfeng Li, 2019, 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Study on the morphology and shape control of volcano-shaped patterned sapphire substrates fabricated by imprinting and wet etching

Shuang Jiang, Tongjun Yu, Z. Z. Chen, 2015 .

Luminescence degradation of InGaN/GaN violet LEDs

Guoyi Zhang, Zhizhong Chen, Tongjun Yu, 2007 .

Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal organic chemical vapor deposition

Guoyi Zhang, Zhizhong Chen, Tongjun Yu, 2011 .

Performance Improvement of VLC System Using GaN-Based LEDs With Strain Relief Layers

Jianping Wang, Huimin Lu, Tongjun Yu, 2016, IEEE Photonics Technology Letters.

Resonant absorption and scattering suppression of localized surface plasmons in Ag particles on green LED.

Zhizhong Chen, Shuang Jiang, Tongjun Yu, 2013, Optics express.

Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes

Zhizhong Chen, Huabo Zhao, Tongjun Yu, 2009 .

Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs

Zhizhong Chen, Tongjun Yu, Z. Qin, 2010 .

Length dependence of polarization in spontaneous edge emissions from InGaN/AlGaN MQWs laser diodes

Ke Xu, Xiaodong Hu, Tongjun Yu, 2007 .

High-performance near-UV LED grown by carbon nanotube assisted nanoheteroepitaxy

Tongjun Yu, Yang Wei, Xiaohui Feng, 2017 .

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.

S. Fan, Tongjun Yu, Yang Wei, 2016, ACS applied materials & interfaces.

Study on structure of AlGaN on AlN interlayer by synchrotron radiation XRD and RBS

Z. J. Yang, Guobing Zhang, Tongjun Yu, 2007 .

An approach to determine the chemical composition in InGaN/GaN multiple quantum wells

Z. J. Yang, Tongjun Yu, G. Y. Zhang, 2004 .

Investigation on strain relaxation distribution in GaN-based μLEDs by Kelvin probe force microscopy and micro-photoluminescence.

Zhizhong Chen, Tongjun Yu, Shunfeng Li, 2018, Optics express.

Compressive strain induced enhancement of transverse-electric polarized ultraviolet light emission for AlGaN quantum wells

Tongjun Yu, W. Ge, L. Fu, 2020 .

Joint evaluation of internal quantum efficiency and light extraction efficiency for AlGaN-based deep ultraviolet LEDs considering optical polarization properties

Jianping Wang, Huimin Lu, Tongjun Yu, 2020 .

Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt

V. Kozlovsky, Tongjun Yu, Z. Qin, 2019, Advanced Optical Materials.

Surface emission enhancement for deep ultraviolet AlGaN-based LEDs using triangular shaped quantum wells

Zhizhong Chen, Jianping Wang, Huimin Lu, 2016 .

Band engineering for surface emission enhancement in Al-rich AlGaN-based deep-ultraviolet light emitting diodes

Jianping Wang, Huimin Lu, Tongjun Yu, 2016 .

Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structure.

Huimin Lu, Tongjun Yu, W. Ge, 2016, Optics express.

Modulating optical polarization properties of Al-rich AlGaN/AlN quantum well by controlling wavefunction overlap

X. J. Chen, Tongjun Yu, G. Y. Zhang, 2013 .

Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells.

Zhizhong Chen, Gen-xiang Chen, Huimin Lu, 2012, Optics letters.

Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN quantum wells.

Gen-xiang Chen, Huimin Lu, Tongjun Yu, 2012, Optics express.

Study of the structural damage in the "0001… GaN epilayer processed by laser lift-off techniques

Z. J. Yang, Yu Wang, Tongjun Yu, 2007 .

Study on Strain Relaxation Distribution in GaN‐Based µLEDs by Kelvin Probe Force Microscopy

Zhizhong Chen, Tongjun Yu, Shunfeng Li, 2017 .

Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells

Z. Fang, Xiaodong Wang, Tongjun Yu, 2017 .

Hysteresis phenomena of the two dimensional electron gas density in lattice-matched InAlN/GaN heterostructures

Xiaodong Wang, Tongjun Yu, W. Ge, 2015 .

Batch synthesis of transfer-free graphene with wafer-scale uniformity

Jingyu Sun, Zhongfan Liu, Tongjun Yu, 2020, Nano Research.

Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process

C. J. Li, Yun Sun, Tongjun Yu, 2010 .

GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template.

Zhizhong Chen, Tongjun Yu, T. Dai, 2011, Optics express.

A study of GaN nucleation and coalescence in the initial growth stages on nanoscale patterned sapphire substrates via MOCVD

Zhizhong Chen, Tongjun Yu, Shunfeng Li, 2018 .

Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD

Shuang Jiang, Tongjun Yu, Z. Z. Chen, 2015 .

Effect of dipole polarization orientation on surface plasmon coupling with green emitting quantum wells by cathodoluminescence

Zhizhong Chen, Tongjun Yu, Shunfeng Li, 2018, RSC advances.

The Coupling Behavior of Multiple Dipoles and Localized Surface Plasmons in Ag Nanoparticles Array

Zhizhong Chen, Shuang Jiang, Tongjun Yu, 2016, Plasmonics.

Efficiency droop suppression of InGaN‐based blue light‐emitting diodes using dip‐shaped quantum wells

Zhizhong Chen, Jianping Wang, Huimin Lu, 2016 .

Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates

Tongjun Yu, Fujun Xu, B. Shen, 2017 .

Fluorine plasma treatment induced deep level traps and their effect on current transportation in Al0.83In0.17N/AlN/GaN Schottky barrier diodes

Tongjun Yu, Guoyi Zhang, B. Shen, 2016 .

Influence of V/III flux ratio on electrical properties of AlInGaN/Gan heterostructures grown by MOCVD

Ke Xu, Tongjun Yu, Guoyi Zhang, 2007 .

Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.

Yongjian Sun, Guoyi Zhang, Huimin Lu, 2013, Optics express.

Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier

Tongjun Yu, Guoyi Zhang, Chuanyu Jia, 2016 .

The growth of high-quality and self-separation GaN thick-films by hydride vapor phase epitaxy

Tongjun Yu, Jiejun Wu, Guoyi Zhang, 2012 .

Investigation on many-body effects in micro-LEDs under ultra-high injection levels.

Zhizhong Chen, Tongjun Yu, Shunfeng Li, 2021, Optics express.