Z. Qin

发表

Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift‐off

Z. J. Yang, Tongjun Yu, Zilan Li, 2004 .

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Z. Qin, Xianbin Li, Xue-Peng Wang, 2020, Advanced science.

Full-composition-graded InxGa1−xN films grown by molecular beam epitaxy

Z. Y. Chen, Y. Wang, Z. Qin, 2020 .

Junction temperature and reliability of high-power flip-chip light emitting diodes

Guoyi Zhang, Huapu Pan, Zhizhong Chen, 2007 .

High performance of AlGaN deep-ultraviolet light emitting diodes due to improved vertical carrier transport by delta-accelerating quantum barriers

Z. Qin, X. Kang, X. L. Yang, 2019, Applied Physics Letters.

Luminescence degradation of InGaN/GaN violet LEDs

Guoyi Zhang, Zhizhong Chen, Tongjun Yu, 2007 .

Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs

Xiaodong Wang, Z. Qin, W. Ge, 2016 .

Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs

Zhizhong Chen, Tongjun Yu, Z. Qin, 2010 .

Ionic liquid gated electric-double-layer transistors based on Mg-doped InN epitaxial films

Hongtao Yuan, Zhuoyu Chen, Xiaodong Wang, 2013 .

Study on structure of AlGaN on AlN interlayer by synchrotron radiation XRD and RBS

Z. J. Yang, Guobing Zhang, Tongjun Yu, 2007 .

High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure

V. Kozlovsky, M. Albrecht, Z. Qin, 2016, Advanced materials.

Study of moiré fringes at the interface of GaN/α-Al2O3 (0001)

R. Zhang, B. Shen, Z. Qin, 2002 .

Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt

V. Kozlovsky, Tongjun Yu, Z. Qin, 2019, Advanced Optical Materials.

Effect of injection current on the optical polarization of AlGaN-based ultraviolet light-emitting diodes.

Z. Qin, J. Cai, B. Shen, 2014, Optics express.

Strain effect on the optical polarization properties of c-plane Al₀.₂₆Ga₀.₇₄N/GaN superlattices.

Z. Qin, B. Shen, Guoyi Zhang, 2014, Optics express.

Optical investigation of strong exciton localization in high Al composition AlxGa₁-xN alloys.

Z. Qin, P. Jin, Jianchang Yan, 2013, Optics express.

Influence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions in AlN/GaN coupled double quantum wells

Z. Qin, G. Y. Zhang, B. Shen, 2009 .

A GaN/AlN quantum cascade detector with a broad response from the mid-infrared (4.1 μm) to the visible (550 nm) spectral range

S. F. Liu, F. Julien, Y. Wang, 2020 .

Temperature dependence on current-voltage characteristics of Ni∕Au–Al0.45Ga0.55N Schottky photodiode

Z. Qin, G. Y. Zhang, Lei Zhang, 2008 .

Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells

Z. Fang, Xiaodong Wang, Tongjun Yu, 2017 .

Study on threading dislocations blocking mechanism of GaN∕AlxGa1−xN superlattices

Z. J. Yang, Z. Qin, G. Y. Zhang, 2008 .

Current transport mechanism of Au∕Ni∕GaN Schottky diodes at high temperatures

Z. J. Yang, Yangyuan Wang, Sen Huang, 2007 .

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

Weiwei Guo, Lin Lu, Chenguang He, 2016, Scientific Reports.

Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Z. Qin, W. Ge, Fujun Xu, 2021 .

Period size effect induced crystalline quality improvement of AlN on a nano-patterned sapphire substrate

Xiaodong Wang, Z. Qin, W. Ge, 2019, Japanese Journal of Applied Physics.

High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates

Z. Qin, X. Kang, X. L. Yang, 2019, Applied Physics Letters.

The sapphire substrate pretreatment effects on high-temperature annealed AlN templates in deep ultraviolet light emitting diodes

Z. Qin, X. Kang, X. L. Yang, 2019, CrystEngComm.

High-quality AlN epitaxy on sapphire substrates with sputtered buffer layers

Xiaodong Wang, Z. Qin, Fujun Xu, 2017 .

Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and high-temperature alternation technique

Z. Qin, N. Tang, B. Shen, 2015 .

Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

Z. Qin, W. Ge, X. Kang, 2021, IEEE Photonics Journal.

Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer.

Xiaodong Wang, Z. Qin, W. Ge, 2019, Optics express.

Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

Y. H. Chen, Z. L. Li, C. C. Huang, 2013 .

Influence of applied electric fields on the absorption coefficient and subband energy distances of intersubband transitions in AlN/GaN coupled double quantum wells

Z. Qin, G. Y. Zhang, B. Shen, 2008 .

Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact

Z. Qin, Fang Liu, 2016 .

Photoconductivity in In_xGa_1-xN epilayers

Xiaodong Wang, Shibo Wang, Z. Qin, 2016 .

Thermally annealed wafer-scale h-BN films grown on sapphire substrate by molecular beam epitaxy

J. J. Yang, S. F. Liu, F. Liu, 2020 .

Transmission electron microscopy investigation of inversion domain boundary in Al0.65Ga0.35N grown on AlN/sapphire template

Z. J. Yang, Xiaodong Wang, L. Sang, 2009 .

Influence of polarization-induced electric fields on coherent electron tunneling in AlN/GaN coupled double quantum wells

C. C. Huang, Z. Qin, G. Y. Zhang, 2010 .

Individually resolved luminescence from closely stacked GaN/AlN quantum wells

A. Strittmatter, Z. Qin, Shiping Guo, 2020 .

High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition

Z. Qin, Fujun Xu, B. Shen, 2017, Scientific Reports.

Cathodoluminescence nano-characterization of individual GaN/AlN quantum disks embedded in nanowires

Z. Qin, B. Shen, G. Schmidt, 2020 .

Etching damage and its recovery in n-GaN by reactive ion etching

Z. J. Yang, Z. Qin, Z. Z. Chen, 2003 .

Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes

Z. Qin, Fujun Xu, B. Shen, 2020, Advanced Functional Materials.

Different degradation behaviors of InGaN/GaN MQWs blue and violet LEDs

Zhizhong Chen, Z. Qin, Guoyi Zhang, 2009 .

Temperature dependence of the specific resistance in Ti/Al/Ni/Au Ohmic contacts on (NH4)2Sx treated n-type GaN

Shaoyun Huang, Z. Qin, G. Y. Zhang, 2009 .

Investigation on the different barrier effect of Ni and Pt in the Ti/Al/Pt/Au and Ti/Al/Ni/Au contacts to n-type GaN

Z. J. Yang, Z. Qin, Z. Z. Chen, 2007 .

Ohmic contact mechanism of Ni/Au contact to p-type GaN studied by Rutherford backscattering spectrometry

Z. J. Yang, Z. Qin, Z. Z. Chen, 2007 .

Correlation of contact resistance with metal diffusion for oxidized Au/Ni/p-GaN contacts studied using Rutherford backscattering spectroscopy

Z. J. Yang, Z. Qin, Z. Z. Chen, 2006 .

Temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact

Xiaodong Hu, Z. Qin, Z. Z. Chen, 2006 .

Microstructure evolution of oxidized Ni/Au ohmic contacts to p-GaN studied by X-ray diffraction

Z. J. Yang, Z. Qin, Z. Z. Chen, 2005 .

Effects of oxidation by O2 plasma on formation of Ni∕Au ohmic contact to p-GaN

Z. J. Yang, Z. Qin, Z. Z. Chen, 2004 .

The role of Ni and Au on transparent film of blue LEDs

Xiaodong Hu, Z. Qin, Z. Z. Chen, 2003 .

Thermal annealing effects on Ni/Au contacts to p type GaN in different ambient

Z. J. Yang, Z. Qin, Z. Z. Chen, 2003 .

Ni diffusion and its influence on electrical properties of AlxGa1−xN∕GaN heterostructures

Z. J. Yang, Yangyuan Wang, Sen Huang, 2008 .

Identifying a doping type of semiconductor nanowires by photoassisted kelvin probe force microscopy as exemplified for GaN nanowires

Mo Li, Xiaodong Wang, Z. Qin, 2017 .

Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells

Y. H. Chen, G. Chen, L. Sang, 2015, Scientific Reports.

Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes by inserting single spike barriers

Xiaodong Wang, W. Guo, Z. Qin, 2016 .

Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

Z. Qin, W. Ge, Fujun Xu, 2016, Scientific Reports.

Morphology and microstructure evolution of Al x Ga 1-x N epilayers grown on GaN/sapphire templates with AlN interlayers observed by transmission electron microscopy

Z. J. Yang, Sen Huang, Z. Qin, 2008 .

Morphology and microstructure evolution of AlxGa1-xN epilayers grown on GaN/sapphire templates with AlN interlayers observed by transmission electron microscopy

Z. Qin, L. Lu, B. Shen, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Spatial identification of traps in AlGaN/GaN heterostructures by the combination of lateral and vertical electrical stress measurements

Xiaodong Wang, Z. Qin, W. Ge, 2016 .

Mechanical properties of AlxGa1−xN films with high Al composition grown on AlN/sapphire templates

Z. J. Yang, Z. Qin, G. Y. Zhang, 2007 .

Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment

Z. Qin, X. Kang, X. L. Yang, 2021 .

Transition from bound to free excitons observed in deep- ultraviolet photoluminescence of AlN grown by MOCVD

Z. Qin, W. Ge, L. Fu, 2016 .

Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers

Z. Qin, W. Ge, Fujun Xu, 2015, Scientific Reports.

Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

Z. Qin, W. Ge, N. Zhang, 2020 .

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

Q. Yan, Z. Qin, Lixia Zhao, 2014 .

Strain effect on polarized optical properties of c ‐plane GaN and m ‐plane GaN

Zhizhong Chen, Z. Qin, Guoyi Zhang, 2009 .

Spontaneous luminescence polarizations of wurtzite InGaN/GaN quantum wells

Zhizhong Chen, Xiaodong Hu, Z. Qin, 2008 .

Anomalous photogalvanic effect of circularly polarized light incident on the two-dimensional electron gas in Al{x}Ga{1-x}N/GaN heterostructures at room temperature.

Z. J. Yang, Y. H. Chen, Z. G. Wang, 2008, Physical review letters.

Self‐Powered, Ultrafast, Visible‐Blind UV Detection and Optical Logical Operation based on ZnO/GaN Nanoscale p‐n Junctions

L. Dai, Z. Qin, Z. Liao, 2011, Advanced materials.

Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodes

Zhizhong Chen, Z. Qin, P. Tian, 2010 .

Capacitance characteristics of back-illuminated Al0.42Ga0.58N∕Al0.40Ga0.60N heterojunction p-i-n solar-blind UV photodiode

Z. Qin, G. Y. Zhang, Xuetong Zhang, 2007 .

Near-infrared two-color intersubband transitions in AlN/GaN coupled double quantum wells

Z. Qin, B. Shen, L. Cen, 2009 .

High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'

H. Nagano, Z. Qin, A. Yoshikawa, 1997 .

Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening

Lei Liu, Junxi Wang, Yanan Guo, 2017 .

Intersubband Transition in GaN/InGaN Multiple Quantum Wells

Y. H. Chen, G. Chen, Z. Qin, 2015, Scientific Reports.

Effect of O2/CHF3 plasma treatment on n-type GaN grown on sapphire by MOCVD

Xiaodong Hu, Z. Qin, Z. Z. Chen, 2002 .

Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

Guoyi Zhang, Z. Qin, Qinsheng Zhu, 2012, Nanoscale Research Letters.

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

Chong Geng, Junxi Wang, Jinmin Li, 2013 .

Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition

Z. Qin, W. Ge, X. Kang, 2022, Superlattices and Microstructures.

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Jie Zhang, Ning Tang, Chenguang He, 2016, Scientific Reports.

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

Mo Li, M. Albrecht, Mathias Müller, 2017, Scientific Reports.

Growth of high quality n-Al0.5Ga0.5N thick films by MOCVD

W. Guo, Z. Qin, B. Shen, 2016 .

Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission

Z. Qin, X. Kang, X. L. Yang, 2020 .

Zero-field spin splitting in AlxGa1−xN/GaN heterostructures with various Al compositions

Z. Qin, N. Tang, B. Shen, 2008 .

Calculation of the electron and hole impact ionization rate for wurtzite AlN and GaN

Z. Qin, G. Luo, B. Shen, 2010 .

Reduction in threading dislocation densities in AlN epilayer by introducing a pulsed atomic-layer epitaxial buffer layer

L. Sang, Z. Qin, T. Dai, 2008 .

Effect of AlN interlayer on incorporation efficiency of Al composition in AlGaN grown by MOVPE

Z. Qin, Z. Z. Chen, T. Yu, 2007 .

Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN

Z. Qin, W. Ge, Xiantong Zheng, 2019, Advanced Functional Materials.

Crystal quality evolution of AlN films via high-temperature annealing under ambient N2 conditions

Z. Qin, B. Shen, Xinqiang Wang, 2018 .

Al-rich AlGaN semiconductor materials and their device applications

Dunjun Chen, L. Sang, Z. Qin, 2019, Ultra-Wide Bandgap Semiconductor Materials.

Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction

Z. J. Yang, Dapeng Yu, Z. Qin, 2006 .

Structural properties of β-Ga2O3 formed by dry thermal oxidization process on GaN

Jiaxin Zheng, Z. Qin, Guoyi Zhang, 2012 .

Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n-GaN

Z. Qin, Z. Z. Chen, X. D. Hu, 2004 .

High-resolution X-ray diffraction analysis of cubic GaN grown on (0 0 1)GaAs by RF-radical source molecular beam epitaxy

Kiyoshi Takahashi, H. Nagano, Z. Qin, 1998 .

Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal–insulator–semiconductor structures

Feng Xu, Z. J. Yang, Maojun Wang, 2007 .

Study of the leakage current mechanism in Schottky contacts to Al0.25Ga0.75N/GaN heterostructures with AlN interlayers

L. Sang, Sen Huang, Z. Qin, 2009 .

Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN

Z. Qin, B. Shen, Guoyi Zhang, 2011 .

Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in AlxGa1−xN/GaN heterostructures

Z. Qin, N. Tang, B. Shen, 2007 .

Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4

L. Sang, Z. Qin, Zhao‐Xu Chen, 2009 .

Influence of the illumination on the spin splitting of the two‐dimensional electron gas in AlxGa1–xN/GaN heterostructures

Z. Qin, N. Tang, B. Shen, 2008 .

Effect of atomic-hydrogen treatment of (001) GaAs substrate at `high temperatures' on rf plasma-assisted molecular beam epitaxy of cubic GaN

H. Nagano, Z. Qin, A. Yoshikawa, 1997 .

Atomically Flat GaAs(001) Surfaces Obtained by High-Temperature Treatment with Atomic Hydrogen Irradiation

H. Nagano, Z. Qin, A. Takahashi, 1997 .

X-ray diffraction reciprocal space and pole figure characterization of cubic GaN epitaxial layers grown on (0 0 1) GaAs by molecular beam epitaxy

Z. Qin, A. Yoshikawa, M. Kobayashi, 1999 .

Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayers

Xiaodong Hu, Z. Qin, Huan Wang, 2007 .

Improved light extraction efficiency of AlGaN deep-ultraviolet light emitting diodes combining Ag-nanodots/Al reflective electrode with highly transparent p-type layer.

Z. Qin, W. Ge, X. Kang, 2021, Optics Express.

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Z. Qin, W. Ge, X. Kang, 2022, Light, science & applications.

Lattice‐Symmetry‐Driven Epitaxy of Hierarchical GaN Nanotripods

Jian Zhang, Xuelin Yang, Bowen Sheng, 2017 .

Suppression of intersubband transition by applied electrical fields in AlN/GaN coupled double quantum wells

Z. Qin, B. Shen, L. Cen, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.