A. Dabiran

发表

MgZnO/AlGaN heterostructure light-emitting diodes

Amir Dabiran, S. J. Pearton, O. Lopatiuk, 2004 .

Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications

S. Pearton, D. Norton, A. Osinsky, 2005 .

Thermal emittance and response time measurements of a GaN photocathode

A. Dabiran, F. Hannon, I. Bazarov, 2009 .

Enhanced vertical transport in p-type AlGaN∕GaN superlattices

Amir Dabiran, Andrei Osinsky, Peter P. Chow, 2004 .

Temperature dependence of pnp GaN/InGaN HBT performance

F. Ren, S. Pearton, A. Osinsky, 2004 .

Impact of aluminum concentration and magnesium doping on the effect of electron injection in p-AlxGa1−xN

Amir Dabiran, Andrei Osinsky, Leonid Chernyak, 2003 .

Simulations of InGaN-base heterojunction bipolar transistors

F. Ren, S. Pearton, A. Dabiran, 2003 .

Effects of base structure on performance of GaN-based heterojunction bipolar transistors

F. Ren, S. Pearton, A. Dabiran, 2003 .

Influence of layer doping and thickness on predicted performance of NPN AlGaN/GaN HBTs

F. Ren, S. Pearton, A. Dabiran, 2003 .

RF performance of GaN-based npn bipolar transistors

F. Ren, S. Pearton, A. Osinsky, 2003 .

0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess length

I. Adesida, A. Kuliev, V. Kumar, 2003 .

Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3

C. R. Abernathy, F. Ren, S. Pearton, 2002 .

Effect of recess length on DC and RF performance of gate-recessed AlGaN/GaN HEMTs

I. Adesida, A. Kuliev, V. Kumar, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE

Amir Dabiran, Joel R. Wendt, C. Monier, 2001 .

ALD AI/sub 2/O/sub 3/ passivated MBE-grown AIGaN/GaN HEMTs on 6H-SiC

I. Adesida, V. Kumar, Guang Chen, 2007 .

Development of Opaque Photocathodes Deposited onto Microchannel Plates

O. Siegmund, A. Tremsin, A. Dabiran, 2017, 2017 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC).

Effect of temperature on CO sensing response in air ambient by using ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

F. Ren, S. Pearton, A. Dabiran, 2013 .

Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments

J. Kim, F. Ren, S. Pearton, 2012 .

Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

F. Ren, S. Pearton, B. Chu, 2011 .

Detection of an endocrine disrupter biomarker, vitellogenin, in largemouth bass serum using AlGaN/GaN high electron mobility transistors

Yu-Lin Wang, F. Ren, S. Pearton, 2010 .

Controlled Growth of GaAs/AlAs(111)B Superlattices

P. Cohen, J. E. Angelo, W. Gerberich, 1992 .

Multisubband photoluminescence inp-type modulation-dopedAlxGa1−xN/GaNsuperlattices

A. Dabiran, E. Schubert, E. Waldron, 2003 .

Electron trapping effects in C- and Fe-doped GaN and AlGaN

A. Osinsky, A. Dabiran, O. Lopatiuk, 2005 .

Botulinum toxin detection using AlGaN∕GaN high electron mobility transistors

Yu-Lin Wang, F. Ren, S. Pearton, 2008 .

Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2008 .

Band gap properties of Zn1−xCdxO alloys grown by molecular-beam epitaxy

S. Pearton, I. Buyanova, M. Izadifard, 2006 .

High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

R. Fitch, J. Gillespie, A. Crespo, 2011, IEEE Electron Device Letters.

Enhanced Layer Growth of GaAs: Sn

P. Cohen, S. Seutter, A. Dabiran, 1997 .

Electron irradiation of AlGaN /GaN and AlN /GaN heterojunctions

N. B. Smirnov, S. Pearton, A. Osinsky, 2008 .

Neutron irradiation effects in p‐GaN

N. B. Smirnov, S. Pearton, A. Osinsky, 2006 .

Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes

J. Kim, F. Ren, S. Pearton, 2013 .

Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

A. Dabiran, P. Chow, E. Chang, 2014, Journal of Electronic Materials.

Dependence of structural and electrical properties of AlGaN/GaN HEMT on Si(111) on buffer growth conditions by MBE

A. Dabiran, P. Chow, D. Biswas, 2013 .

Electrical, photoelectrical, and luminescent properties of doped p-type GaN superlattices

S. Pearton, A. Osinsky, A. Dabiran, 2007 .

Electrical and optical properties of doped p-type GaN superlattices

S. Pearton, A. Osinsky, A. Dabiran, 2006 .

Improved Long-Term Thermal Stability At 350°C Of TiB2–Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors

J. Kim, F. Ren, S. Pearton, 2007 .

W 2 B based High Thermal Stability Ohmic Contacts to n-GaN

F. Ren, S. Pearton, A. Osinsky, 2005 .

Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors

F. Ren, S. Pearton, G. Jessen, 2004 .

Electrochemical potential oscillations of the two-dimensional electron gas in GaAs/AlGaAs heterostructures in high magnetic fields

S. Wright, F. Fang, A. Dabiran, 1988 .

Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiN}_{x}$ Dielectric Layer

I. Adesida, V. Kumar, A. Dabiran, 2009, IEEE Electron Device Letters.

Passivation of AlN/GaN high electron mobility transistor using ozone treatment

F. Ren, S. Pearton, Chih-Yang Chang, 2010 .

Development of enhancement mode AIN/GaN high electron mobility transistors

F. Ren, S. Pearton, Chih-Yang Chang, 2009 .

Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures

S. Pearton, A. Osinsky, A. Dabiran, 2008 .

Semi-Insulating, Fe-Doped Buffer Layers Grown by Molecular Beam Epitaxy

S. Pearton, A. Osinsky, A. Dabiran, 2007 .

High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors

C. R. Abernathy, F. Ren, S. Pearton, 2002 .

Pressure Sensing with PVDF Gated AlGaN/GaN High Electron Mobility Transistor

K. H. Chen, F. Ren, S. Pearton, 2009 .

Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer

Xingwang Zhang, J. Dong, A. Dabiran, 2011 .

A rate equation model for the growth of GaN on GaN(0001̄) by molecular beam epitaxy

P. Cohen, B. Ishaug, A. Dabiran, 2000 .

Structure and composition of GaN(0001) A and B surfaces

P. Cohen, S. Seutter, B. Ishaug, 1999 .

In situ control of gan growth by molecular beam epitaxy

A. M. Johnston, P. Cohen, A. Dabiran, 1997 .

Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

J. S. Wallace, A. Dabiran, U. Singisetti, 2016, Journal of Electronic Materials.

Injection and Avalanche Electroluminescence of $\hbox{Al}_{\hbox{0.1}} \hbox{Ga}_{\hbox{0.9}} \hbox{N/Al}_{\hbox{0.15}} \hbox{Ga}_{\hbox{0.85}} \hbox{N}$ Multiple Quantum Wells

R. Alfano, A. Osinsky, B. Hertog, 2008, IEEE Journal of Selected Topics in Quantum Electronics.

Reflection high energy electron diffraction measurements of molecular beam epitaxially grown GaAs and InGaAs on GaAs(111)

P. Cohen, J. E. Angelo, W. Gerberich, 1993 .

Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers

F. Ren, S. Pearton, R. Fitch, 2003 .

Comparison of electrical properties and deep traps in p-AlxGa1−xN grown by molecular beam epitaxy and metal organic chemical vapor deposition

S. Pearton, In‐Hwan Lee, A. Dabiran, 2009 .

Surface reconstructions and growth mode transitions of AlAs(100)

P. Cohen, A. Dabiran, 1995 .

ZnO Nanowire/p-GaN Heterojunction LEDs

A. Dabiran, J. Cole, H. Jacobs, 2007 .

Hybrid CdZnO/GaN quantum-well light emitting diodes

A. Osinsky, B. Hertog, A. Dabiran, 2008 .

Properties of CdZnO/ZnO Heterostructures for UV Light Emitters

D. Look, S. Pearton, A. Cartwright, 2006 .

Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection

Y. Sharma, M. Bozack, Moonil Kim, 2012 .

From Thermodynamics to Quantum Wires: A Review of Reflection High-Energy Electron Diffraction

P. Pukite, P. Cohen, A. Dabiran, 1990 .

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

Xingwang Zhang, P. Chu, Wenjun Zhang, 2010 .

Detection of halide ions with AlGaN∕GaN high electron mobility transistors

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2005 .

Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy

S. Pearton, A. Dabiran, P. Chow, 2010 .

Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions

S. Pearton, A. Osinsky, A. Dabiran, 2008 .

Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors

Amir Dabiran, S. J. Pearton, Andrei Osinsky, 2007 .

Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors

F. Ren, S. Pearton, B. Chu, 2010 .

Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors

Amir Dabiran, Stephen J. Pearton, Peter P. Chow, 2010 .

Selective Detection of Hg"II… Ions from Cu"II… and Pb"II… Using AlGaN/GaN High Electron Mobility Transistors

Amir Dabiran, Yiider Tseng, S. J. Pearton, 2007 .

Electrical detection of immobilized proteins with ungated AlGaN∕GaN high-electron-mobility Transistors

Amir Dabiran, Byoung Sam Kang, Andrei Osinsky, 2005 .

High-indium-content InGaN quantum-well structure grown pseudomorphically on a strain-relaxed InGaN template layer

Dunjun Chen, Hai Lu, Rong Zhang, 2012 .

dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

Amir Dabiran, Albert G. Baca, Richard Wilkins, 2001 .

Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors

Fan Ren, Changzhi Li, Yu-Lin Wang, 2008 .

Wireless Hydrogen Sensor Networks Using AlGaN/GaN High Electron Mobility Transistor Based Differential Diodes Sensor

Yu-Lin Wang, Amir Dabiran, Jenshan Lin, 2008 .

Improved Mobilities and Resistivities in Modulation-Doped P-type AlGaN / GaN Superlattices

A. Dabiran, E. Schubert, J. Graff, 2001 .

Al and Ga diffusion barriers in molecular beam epitaxy

P. Cohen, A. Dabiran, K. Chen, 1993 .

Optimization of conductivity in p-type GaN∕InGaN-graded superlattices

S. Pearton, M. Z. Kauser, A. Osinsky, 2005 .

Electrical properties of undoped bulk ZnO substrates

Amir Dabiran, David P. Norton, Andrei Osinsky, 2006 .

Optical characterization of ZnMnO-based dilute magnetic semiconductor structures

S. Pearton, I. Buyanova, Weimin M. Chen, 2006 .

Direct measurement of curvature-dependent ion etching of GaN

P. Cohen, A. Dabiran, R. Jorgenson, 2005 .

Minipressure sensor using AlGaN/GaN high electron mobility transistors

Amir Dabiran, S. J. Pearton, Peter P. Chow, 2009 .

Annealing temperature stability of ir and ni-based ohmic contacts on AlGaN/GaN high electron mobility transistors

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2004 .

Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2008 .

SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

Amir Dabiran, Stephen J. Pearton, Peter P. Chow, 2012 .

Enhanced surface cation mobility on Sn delta-doped (Ga,Al)As

P. Cohen, A. Dabiran, G. Petrich, 1992 .

Step edge barriers versus step edge relaxation in GaAs:Sn molecular beam epitaxy

P. Cohen, S. Seutter, A. Dabiran, 1999 .

Direct Observations of the Strain-Limited Island Growth of Sn-Doped GaAs(100)

P. Cohen, S. Seutter, A. Dabiran, 1998 .

The effect of submonolayer Sn δ‐doping layers on the growth of InGaAs and GaAs

P. Cohen, J. E. MacDonald, A. Dabiran, 1991 .

Robust detection of hydrogen using differential AlGaN∕GaN high electron mobility transistor sensing diodes

Changzhi Li, Amir Dabiran, Jenshan Lin, 2006 .

Robust Detection of Hydrogen Using Differential AlGaN/GaN High Electron Mobility Transistor Sensing Diodes

Changzhi Li, Amir Dabiran, Jenshan Lin, 2007 .

Electrical characterization of atomic layer deposited Al2O3/InN interfaces

A. Dabiran, U. Singisetti, Ye Jia, 2016 .

Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template.

R. Zhang, A. Dabiran, J. Xue, 2012, Optics express.

Nucleation, growth and magnetic properties of epitaxial FeAl films on AlAs/GaAs

S. Parkin, P. Cohen, D. Weller, 1997 .

Scaling and high-frequency performance of AlN/GaN HEMTs

W. Curtice, Xi Luo, A. Dabiran, 2011, 2011 IEEE International Symposium on Radio-Frequency Integration Technology.

AlGaN/InGaN HEMTs for RF current collapse suppression

I. Adesida, A. Kuliev, R. Schwindt, 2004 .

Effects of polarization fields on avalanche breakdown of AlGaN quantum-well photodiode

Robert R. Alfano, Amir Dabiran, Wubao Wang, 2012, OPTO.

Avalanche breakdown and breakdown luminescence of AlGaN multiquantum wells

Robert R. Alfano, Amir Dabiran, Stephen Gundry, 2005 .

Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

Amir Dabiran, Albert G. Baca, S. J. Pearton, 2002 .

Enhanced electroluminescence from ZnO‐based heterojunction light‐emitting diodes by hydrogen plasma treatment

A. Dabiran, P. Chow, J. X. Wang, 2011 .

Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

I. Adesida, A. Dabiran, P. Chow, 2008 .

Fabrication of Hybrid n-ZnMgO/n-ZnO/ p-AlGaN/ p-GaN Light-Emitting Diodes

K. Baik, Hyucksoo Yang, S. Han, 2005 .

Stable hydrogen sensors from AlGaN∕GaN heterostructure diodes with TiB2-based Ohmic contacts

Changzhi Li, Amir Dabiran, Jenshan Lin, 2007 .

Optimization of p-type AlGaN/GaN and GaN/InGaN Superlattice Design for Enhanced Vertical Transport

M. Z. Kauser, A. Osinsky, J. Dong, 2004 .

Gallium nitride photocathode development for imaging detectors

John V. Vallerga, Jason McPhate, Anton S. Tremsin, 2008, Astronomical Telescopes + Instrumentation.

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

Amir Dabiran, Andrei Osinsky, Andrew M. Wowchak, 2008 .

Proton irradiation effects on AlN/GaN high electron mobility transistors

Amir Dabiran, Lin Zhou, David J. Smith, 2010 .

Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas

A. Dabiran, H. Ekinci, V. Kuryatkov, 2018 .

Thermal stability of OHMIC contacts to InN

F. Ren, S. Pearton, C. Abernathy, 1998 .

N-Limited Versus Ga-Limited Growth on${\rm GaN}(000\bar{1})$by MBE UsingNH3

A. M. Johnston, P. Cohen, A. Dabiran, 1998 .

Growth rate reduction of GaN due to Ga surface accumulation

A. M. Johnston, P. Cohen, A. Dabiran, 1996 .