A. Bell

发表

Effect of layer thickness on the electrostatic potential in InGaN quantum wells

M. Stevens, A. Bell, M. McCartney, 2004 .

Structural and optical characterization of nonpolar GaN/AlN quantum wells

S. Chu, A. Bell, F. Ponce, 2003 .

Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1−xN layers

A. Bell, F. Ponce, S. Tanaka, 2004 .

Growth of self-assembled GaN quantum dots via the vapor-liquid-solid mechanism

David J. Smith, A. Bell, F. Ponce, 2002 .

Spatially Resolved Cathodoluminescence Study of As Doped GaN

C. T. Foxon, A. Bell, F. Ponce, 2001 .

Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire

H. Amano, I. Akasaki, A. Bell, 2003 .

Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy

Z. G. Wang, C. T. Foxon, A. Bell, 2000 .

Defect and stress control of AlGaN for fabrication of high performance UV light emitters

S. Kamiyama, H. Amano, I. Akasaki, 2004 .

Thick crack-free AlGaN films deposited by facet-controlled epitaxial lateral overgrowth

H. Amano, I. Akasaki, A. Bell, 2003 .

Field effect and localization in InGaN/GaN quantum wells

A. Bell, F. Ponce, H. Marui, 2003, 2003 International Symposium on Compound Semiconductors.

Response to “Comment on ‘Low Stokes shift in thick and homogeneous InGaN epilayers’ ” [Appl. Phys. Lett 81, 1353 (2002)]

A. Bell, F. Ponce, F. Bertram, 2002 .

Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001)-(√3×√3)

David J. Smith, A. Bell, F. Ponce, 2003 .

Atomic arrangement at the AlN/ZrB2 interface

H. Amano, I. Akasaki, A. Bell, 2002 .

Optoelectronic and microstructure attributes of epitaxial SrTiO3 on Si

A. Bell, F. Ponce, Ran Liu, 2005 .

Synthesis of highly luminescent, undoped, Mg-doped and Si-doped GaN powders

A. Bell, F. Ponce, Rafael García, 2007 .

Synthesis, structure and luminescence of high brightness gallium nitride powder

M. Stevens, A. Bell, F. Ponce, 2003 .

Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy

S. Kamiyama, H. Amano, I. Akasaki, 2003 .

Localization versus field effects in single InGaN quantum wells

Fernando Ponce, Jürgen Christen, A. Bell, 2004 .

The nature of arsenic incorporation in GaN

C. T. Foxon, A. Bell, F. Ponce, 2001 .

An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy

C. T. Foxon, A. Bell, I. Harrison, 2000 .

Luminescence from stacking faults in gallium nitride

C. Q. Chen, Fernando Ponce, M. Khan, 2005 .

Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE

S. Kamiyama, H. Amano, I. Akasaki, 2003 .

Microstructure and electronic properties of InGaN alloys

Fernando Ponce, M. Stevens, M. Stevens, 2003 .

The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy

C. T. Foxon, A. Bell, F. Ponce, 2002 .

Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN

J. Hayes, E. Larkins, J. Massies, 2001 .

The influence of the annealing ambient on strain and doping in GaN during high-temperature processing

C. T. Foxon, J. Hayes, A. Bell, 1999 .

High-temperature processing of GaN: The influence of the annealing ambient on strain in GaN

Martin Kuball, C. T. Foxon, J. M. Hayes, 1999 .

Low Stokes shift in thick and homogeneous InGaN epilayers

A. Bell, F. Ponce, S. Tanaka, 2002 .

Nitrogen surfactant effects in GaInP

G. B. Stringfellow, T. Seong, Joonmyoung Lee, 2004 .

Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate

C. T. Foxon, Y. Okada, A. Bell, 2001 .

Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth

S. Kamiyama, H. Amano, I. Akasaki, 2004 .