Hyeongnam Kim

发表

Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures

Zhaojun Lin, Hyeongnam Kim, Jaesun Lee, 2004 .

Analysis of surface states in ZnO nanowire field effect transistors

Takhee Lee, Hyeongnam Kim, W. Lu, 2014 .

Cross-polarization schemes for peptide samples oriented in hydrated phospholipid bilayers.

Hyeongnam Kim, R. Fu, T. Cross, 2004, Journal of magnetic resonance.

X-band power performance of N-face GaN MIS-HEMTs

U. Mishra, J. Speck, Hyeongnam Kim, 2011 .

Passivation effects in Ni∕AlGaN∕GaN Schottky diodes by annealing

Hyeongnam Kim, Jaesun Lee, W. Lu, 2006 .

Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors

S. Rajan, Hyeongnam Kim, W. Lu, 2012, Journal of Electronic Materials.

Fabrication of self-aligned T-gate AlGaN/GaN high electron mobility transistors

Hyeongnam Kim, Jaesun Lee, W. Lu, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

Trap behavior in AlGaN/GaN HEMTs by post-gate-annealing

Hyeongnam Kim, Jaesun Lee, W. Lu, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

Post-annealing effects on device performance of AlGaN/GaN HFETs

Hyeongnam Kim, Jaesun Lee, W. Lu, 2004 .

Temperature Dependence of Electron Transport in ZnO Nanowire Field Effect Transistors

Takhee Lee, Hyeongnam Kim, W. Lu, 2014, IEEE Transactions on Electron Devices.

Gate length scaling study of InAlAs/InGaAs/InAsP composite channel HEMTs

M. Hudait, S. Ringel, Hyeongnam Kim, 2007 .

Passivation of Surface and Interface States in AlGaN/GaN HEMT Structures by Annealing

Hyeongnam Kim, Jaesun Lee, W. Lu, 2007 .

Postprocessing annealing effects on direct current and microwave performance of AlGaN/GaN high electron mobility transistors

Hyeongnam Kim, Jaesun Lee, W. Lu, 2004 .

Reverse bias lifetime reliability assessments of HV GaN power device

Hari Kannan, Alain Charles, Tim McDonald, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs

Florin Udrea, Alain Charles, Giorgia Longobardi, 2018, Microelectron. Reliab..

Post‐annealing effects on trapping behaviors in AlGaN/GaN HEMTs

Hyeongnam Kim, W. Lu, Jungil Lee, 2005 .

The effect of Hartmann-Hahn mismatching on polarization inversion spin exchange at the magic angle.

Scott A. Smith, Hyeongnam Kim, R. Fu, 2002, Journal of magnetic resonance.