S. Kim

发表

TOPICAL REVIEW: GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

Jenshan Lin, S. J. Pearton, Brent P. Gila, 2004 .

Effects of interface roughness scattering on RF performance of nanowire transistors

T. Boykin, M. Luisier, Gerhard Klimeck, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Device Chemistry of Graphene Transistors

P. Rossky, S. Park, D. Akinwande, 2019, 1906.05734.

Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

John C. Roberts, Stephen J. Pearton, Brent P. Gila, 2004 .

Effect of deposition conditions and annealing on W Schottky contacts on n-GaN

W. Lewis, F. Ren, S. Pearton, 2004 .

Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors

Guan-Ting Chen, Mark Sheplak, Stephen J. Pearton, 2003 .

Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design

W. S. Hobson, F. Ren, S. Pearton, 2002 .

Interface dependent electrical properties of amorphous InGaZnO4 thin film transistors

Valentin Craciun, S. J. Pearton, David P. Norton, 2009 .

High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates

F. Ren, S. Pearton, D. Norton, 2008 .

Room temperature deposited oxide p-n junction using p-type zinc-cobalt-oxide

D. Norton, S. Kim, M. Ivill, 2010 .

Stable room temperature deposited amorphous InGaZnO4 thin film transistors

Yu-Lin Wang, F. Ren, S. Pearton, 2008 .

High-Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated by Radio-Frequency Sputtering

David P. Norton, Ivan I. Kravchenko, Stephen J. Pearton, 2008 .

Characteristics of Thin-Film p-ZnMgO/n-ITO Heterojunctions on Glass Substrates

F. Ren, S. Pearton, K. Ip, 2004 .

Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications.

J. Xie, S. Kim, Z. Sitar, 2013, Applied physics letters.

Charge carrier and spin doping in ZnO thin films

David P. Norton, J. M. Erie, Stephen J. Pearton, 2006 .

Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO

F. Ren, K. Baik, S. Pearton, 2004 .

Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors Fabricated with a MgF2 Passivation Layer

H. J. Kim, J. Yang, S. Kim, 2020, Journal of the Korean Physical Society.

Annealing temperature stability of ir and ni-based ohmic contacts on AlGaN/GaN high electron mobility transistors

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2004 .

AlGaN/GaN high electron mobility transistor structures for pressure and pH sensing

Guan-Ting Chen, Mark Sheplak, Rishabh Mehandru, 2005 .

Hydrogen sensors based on Sc2O3/AlGaN/GaN high electron mobility transistors

Rishabh Mehandru, S. J. Pearton, Brent P. Gila, 2005 .

Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape

F. Ren, S. Pearton, D. Norton, 2008 .

Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors

Rishabh Mehandru, S. J. Pearton, Brent P. Gila, 2004 .

Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning

F. Ren, K. Baik, S. Pearton, 2004 .

Sensitivity of Pt/ZnO schottky diode characteristics to hydrogen

David P. Norton, Stephen J. Pearton, Young-Woo Heo, 2004 .

High mobility InGaZnO4 thin-film transistors on paper

S. J. Pearton, David P. Norton, S. Kim, 2009 .

Perhydropolysilazane spin-on-dielectric passivation buffer layers for AlGaN/GaN high-electron mobility transistors

S. Kim, S. D. Kim, P. S. Ko, 2012 .

A Study of Carbon Effects in Implantation Process for Non‐Silicide Contact Formation

S. Kim, W. Jeon, S. Kondratenko, 2006 .

Comparison of MOS and Schottky W/Pt–GaN diodes for hydrogen detection

Stephen J. Pearton, Brent P. Gila, C. R. Abernathy, 2005 .

Electrical Properties of Silicon-Oxide-Based Memristors on Silicon-on-Insulator Substrates

S. Kim, V. Vorontsov, D. Korolev, 2021, Nanobiotechnology Reports.

Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors

Jenshan Lin, Stephen J. Pearton, Brent P. Gila, 2005 .

Remote sensing system for hydrogen using GaN Schottky diodes

Mark E. Law, Jenshan Lin, Jenshan Lin, 2005 .

Detection of CO using bulk ZnO Schottky rectifiers

B. S. Kang, K. Ip, D. Norton, 2005 .

Broadband THz detection and homodyne mixing using GaAs high-electron-mobility transistor rectifiers

Sang-Woo Kim, Sascha Preu, Arthur C. Gossard, 2013, Optics/Photonics in Security and Defence.

Contacts to p-type ZnMgO

B. S. Kang, F. Ren, S. Pearton, 2004 .