B. Gila

A. P. Zhang, F. Ren, S. Pearton, 2003, The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003..

Cu-plated through-wafer vias for AlGaN∕GaN high electron mobility transistors on Si

F. Ren, S. Pearton, J. Roberts, 2009 .

Enhanced functionality in GaN and SiC devices by using novel processing

S. J. Pearton, C. Abernathy, J. Zavada, 2003, International Semiconductor Device Research Symposium, 2003.

Increased Schottky barrier heights for Au on n- and p-type GaN using cryogenic metal deposition

F. Ren, S. Pearton, S. Jang, 2006 .

Improved Au Schottky contacts on GaAs using cryogenic metal deposition

F. Ren, S. Pearton, S. Jang, 2006 .

GaN, ZnO and InN nanowires and devices.

F. Ren, S. Pearton, D. Norton, 2008, Journal of nanoscience and nanotechnology.

Band alignment in ZrSiO4/ZnO heterojunctions

F. Ren, S. Pearton, B. Gila, 2016 .

Band offsets in Sc2O3/ZnO heterostructures deposited by RF magnetron sputtering

F. Ren, S. Pearton, B. Gila, 2015 .

Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3

S. J. Pearton, B. Gila, K. Hobart, 2018, Applied Physics Letters.

Acceptor state formation in arsenic‐doped ZnO films grown using ozone

S. J. Pearton, D. Norton, B. Gila, 2008 .

Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3

S. J. Pearton, B. Gila, E. Lambers, 2019, Journal of Electronic Materials.

Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al0.14Ga0.86)2O3

S. J. Pearton, B. Gila, E. Lambers, 2019, Semiconductor Science and Technology.

Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3

B. Gila, D. Hays, S. Pearton, 2018, ECS Journal of Solid State Science and Technology.

Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3

F. Ren, S. Pearton, B. Gila, 2018 .

Band alignment of Al 2 O 3 with (-201) β-Ga 2 O 3

F. Ren, S. Pearton, B. Gila, 2017 .

Band alignment of atomic layer deposited SiO2 and HfSiO4 with β-Ga2O3

F. Ren, S. Pearton, B. Gila, 2017 .

Conduction and valence band offsets of LaAl2O3 with (−201) β-Ga2O3

F. Ren, S. Pearton, B. Gila, 2017 .

Effect of Cryogenic Temperature Deposition of Various Metal Contacts to Bulk, Single-Crystal n-type ZnO

F. Ren, S. Pearton, D. Norton, 2006 .

Band offsets in ITO/Ga 2 O 3 heterostructures

F. Ren, S. Pearton, B. Gila, 2017 .

Valence and conduction band offsets in AZO/Ga2O3 heterostructures

F. Ren, S. Pearton, B. Gila, 2017 .

Growth of (SmxGa1−x)2O3 by molecular beam epitaxy

S. J. Pearton, C. Abernathy, B. Gila, 2022, Journal of Vacuum Science & Technology A.

Band offsets in the Sc2O3∕GaN heterojunction system

F. Ren, S. Pearton, C. Abernathy, 2006 .

Determination of Sm2O3/GaAs heterojunction band offsets by x-ray photoelectron spectroscopy

S. Pearton, C. Abernathy, B. Gila, 2008 .

MBE Growth of Oxides for III–N MOSFETs

F. Ren, J. Han, C. Abernathy, 1999 .

Band alignments of dielectrics on (− 201) β-Ga2O3

F. Ren, S. Pearton, B. Gila, 2019, Gallium Oxide.

Ir ∕ Au Ohmic Contacts on Bulk, Single-Crystal n-Type ZnO

F. Ren, S. Pearton, D. Norton, 2007 .

Ir/Au Ohmic Contacts on Bulk, Single-Crystal n-Type ZnO

F. Ren, S. Pearton, D. Norton, 2007 .

Environmental stability of candidate dielectrics for GaN-based device applications

F. Ren, S. Pearton, C. Abernathy, 2009 .

Band offsets in HfO2/InGaZnO4 heterojunctions

F. Ren, S. Pearton, B. Gila, 2012 .

Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy

F. Ren, S. Pearton, B. Gila, 2011 .

Ir-based diffusion barriers for Ohmic contacts to p-GaN

F. Ren, S. Pearton, B. Gila, 2008 .

Ohmic contacts to p-type GaN based on TaN, TiN, and ZrN

F. Ren, S. Pearton, C. Abernathy, 2007 .

Magnetic properties of n-GaMnN thin films

R. M. Frazier, F. Ren, S. Pearton, 2002 .

GaN electronics for high power, high temperature applications

A. P. Zhang, J. Chyi, T. Nee, 2000 .

Surface and bulk thermal annealing effects on ZnO crystals

Valentin Craciun, David P. Norton, Stephen J. Pearton, 2008 .

Selective-hydrogen sensing at room temperature with Pt-coated InN nanobelts

Stephen J. Pearton, Brent P. Gila, Wei-Ta Lai, 2008 .

Indication of hysteresis in AlMnN

Stephen J. Pearton, Brent P. Gila, C. R. Abernathy, 2003 .

Effect of Oxygen Co-Doping on the Electronic and Magnetic Properties of Ga ( 1 − x ) Mn x N

R. M. Frazier, S. Pearton, G. Thaler, 2005 .

Electric-Field-Driven Degradation in off-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors

Liu Lu, Lin Zhou, Soohwan Jang, 2011, IEEE Transactions on Device and Materials Reliability.

Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

Jinhyung Kim, Lu Liu, E. A. Douglas, 2012, Microelectron. Reliab..

AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress

Jinhyung Kim, Liu Lu, E. A. Douglas, 2011, Microelectron. Reliab..

Degradation Mechanisms for GaN and GaAs High Speed Transistors

Stephen J. Pearton, Brent P. Gila, F. Ren, 2012, Materials.

Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application

F. Ren, S. Pearton, C. Abernathy, 2006 .

Advantages and limitations of MgO as a dielectric for GaN

C. R. Abernathy, F. Ren, S. Pearton, 2003 .

Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on Gan by Plasma Assisted Gas Source Molecular Beam Epitaxy

F. Ren, S. Pearton, C. Abernathy, 2002 .

Detection of hydrogen with SnO2-coated ZnO nanorods

S. J. Pearton, David P. Norton, Hung-Ta Wang, 2007 .

Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing

F. Ren, B. Appleton, R. Elliman, 2012 .

AlGaN/GaN HEMT And ZnO nanorod-based sensors for chemical and bio-applications

Yiider Tseng, Brent P. Gila, Aik Goh, 2009, OPTO.

Room temperature magnetism in GaMnP produced by both ion implantation and molecular-beam epitaxy

John M. Zavada, Stephen J. Pearton, Brent P. Gila, 2002 .

Surface roughness‐induced artifacts in secondary ion mass spectrometry depth profiling and a simple technique to smooth the surface

J. Poate, H. Gossmann, H. Luftman, 1996 .

Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77 K

F. Ren, S. Pearton, B. Kang, 2007 .

Surface Chemical Treatment for the Cleaning of AlN and GaN Surfaces

Brent P. Gila, R. G. Wilson, C. R. Abernathy, 2000 .

Multi-Ion Beam Lithography and Processing Studies

B. Appleton, B. Gila, S. Tongay, 2011 .

New Dielectrics for Gate Oxides and Surface Passivation on GaN

F. Ren, S. Pearton, G. Thaler, 2005, 2005 International Semiconductor Device Research Symposium.

Polydiacetylene‐based selective NH3 gas sensor using Sc2O3/GaN structures

S. J. Pearton, Brent P. Gila, Chongmin Lee, 2007 .

Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs

F. Ren, S. Pearton, C. Abernathy, 2002, IEEE Electron Device Letters.

Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes

Rishabh Mehandru, Stephen J. Pearton, Brent P. Gila, 2002 .

Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs

Rishabh Mehandru, Stephen J. Pearton, S. Bates, 2001 .

Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy

R. M. Frazier, S. Pearton, G. Thaler, 2005 .

Comparison of E-beam and Sputter-Deposited ITO Films for 1.55 μm Metal–Semiconductor–Metal Photodetector Applications

F. Ren, N. Emanetoglu, B. Kang, 2007 .

Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide

F. Ren, S. Pearton, R. Mehandru, 2002 .

SiO2 / Gd2 O 3 / GaN Metal Oxide Semiconductor Field Effect Transistors

J. Chyi, T. Nee, S. Pearton, 2001 .

Gd2O3/GaN metal-oxide-semiconductor field-effect transistor

S. J. Pearton, Brent P. Gila, Tzer-En Nee, 2000 .

Novel Dielectrics for GaN Device Passivation and Improved Reliability

F. Ren, S. Pearton, C. Abernathy, 2013 .

MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

Guan-Ting Chen, Tetsu Kachi, M. Ishiko, 2004 .

Simulated High-Temperature Characteristics of Sc2 O 3 / GaN MOSFETs

F. Ren, S. Pearton, C. Abernathy, 2003 .

Temperature dependence of MgO/GaN MOSFET performance

C. R. Abernathy, F. Ren, S. Pearton, 2003 .

Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors

F. Ren, A. Baca, C. Abernathy, 2003 .

Growth of Scandium Magnesium Oxide on GaN

F. Ren, S. Pearton, C. Abernathy, 2003 .

Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics

C. R. Abernathy, F. Ren, S. Pearton, 1998 .

Study of defects evolution in GaN layers grown by metal-organic chemical vapor deposition

C. Abernathy, B. Gila, V. Craciun, 2008 .

Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate

Byoung Sam Kang, Stephen J Pearton, Byung Hwan Chu, 2010, Journal of diabetes science and technology.

Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

Yu-Lin Wang, F. Ren, S. Pearton, 2009 .

Materials modifications using a multi-ion beam processing and lithography system

B. Appleton, B. Gila, S. Tongay, 2012 .

Properties of Zn3N2-doped ZnO films deposited by pulsed laser deposition

F. Ren, S. Pearton, Yuanjie Li, 2008 .

Synthesis of graphene and graphene nanostructures by ion implantation and pulsed laser annealing

F. Ren, B. Appleton, R. Elliman, 2016 .

Electrical transport properties of single ZnO nanorods

David P. Norton, Stephen J. Pearton, Brent P. Gila, 2004 .

Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes

Stephen J. Pearton, Brent P. Gila, C. R. Abernathy, 2003 .

Graphene/GaN Schottky diodes: Stability at elevated temperatures

Sefaattin Tongay, Brent P. Gila, Bill R. Appleton, 2011 .

pH sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region

John C. Roberts, S. J. Pearton, Hung-Ta Wang, 2007 .

Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors

Hung-Ta Wang, Stephen J. Pearton, Brent P. Gila, 2005 .

Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors

Byoung Sam Kang, Jenshan Lin, David P. Norton, 2006, Sensors (Basel, Switzerland).

AlGaN/GaN-based metal-oxide semiconductor diode-based hydrogen gas sensor

Stephen J. Pearton, Brent P. Gila, C. R. Abernathy, 2004 .

AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing

B. S. Kang, F. Ren, S. Pearton, 2005, IEEE Sensors Journal.

AlGaN/GaN high electron mobility transistor structures for pressure and pH sensing

Guan-Ting Chen, Mark Sheplak, Rishabh Mehandru, 2005 .

Hydrogen sensors based on Sc2O3/AlGaN/GaN high electron mobility transistors

Rishabh Mehandru, S. J. Pearton, Brent P. Gila, 2005 .

Low specific contact resistance Ti∕Au contacts on ZnO

David P. Norton, Stephen J. Pearton, Hyun-Sik Kim, 2006 .

Robust detection of hydrogen using differential AlGaN∕GaN high electron mobility transistor sensing diodes

Changzhi Li, Amir Dabiran, Jenshan Lin, 2006 .

Robust Detection of Hydrogen Using Differential AlGaN/GaN High Electron Mobility Transistor Sensing Diodes

Changzhi Li, Amir Dabiran, Jenshan Lin, 2007 .

Exhaled-Breath Detection Using AlGaN ∕ GaN High Electron Mobility Transistors Integrated with a Peltier Element

John C. Roberts, Stephen J. Pearton, Brent P. Gila, 2008 .

Reduction of Surface-Induced Current Collapse in AlGaN/GaN HFETs on Freestanding GaN Substrates

S. S. Park, C. R. Abernathy, J. Chyi, 2004 .

Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors.

Evan P. Donoghue, A. Rinzler, B. Appleton, 2012, ACS nano.

Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO

Sheng-Lyang Jang, David P. Norton, Hung-Ta Wang, 2007 .

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

A. F. Hebard, B. Appleton, B. Gila, 2011, 1105.4811.

Cell-shaped silicon-on-insulator microdosimeters: characterization and response to 239PuBe irradiations

J. Ziegler, A. Mazza, A. Rosenfeld, 2017, Australasian Physical & Engineering Sciences in Medicine.

Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors

Rishabh Mehandru, S. J. Pearton, Brent P. Gila, 2004 .

Measurement of Band Offsets in Y 2 O 3 /InGaZnO 4 Heterojunctions

F. Ren, S. Pearton, D. Norton, 2014 .

Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning

F. Ren, K. Baik, S. Pearton, 2004 .

A 21st Century Approach to Electronic Device Reliability

Fan Ren, Mark E. Law, Scott E. Thompson, 2013 .

Band Offsets in Dielectric/InGaZnO4 Heterojunctions

F. Ren, S. Pearton, D. Norton, 2013 .

Growth optimization for high quality GaN films grown by metal-organic chemical vapor deposition

C. Abernathy, B. Gila, V. Craciun, 2008 .

Erratum: “Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors” [Appl. Phys. Lett. 95, 082110 (2009)]

Yu-Lin Wang, F. Ren, S. Pearton, 2009 .

Hydrogen and ozone gas sensing using multiple ZnO nanorods

David P. Norton, Stephen J. Pearton, Brent P. Gila, 2005 .

Stable hydrogen sensors from AlGaN∕GaN heterostructure diodes with TiB2-based Ohmic contacts

Changzhi Li, Amir Dabiran, Jenshan Lin, 2007 .

Characterization of bulk GaN rectifiers for hydrogen gas sensing

Hung-Ta Wang, Stephen J. Pearton, Lars Voss, 2005 .

Comparison of MOS and Schottky W/Pt–GaN diodes for hydrogen detection

Stephen J. Pearton, Brent P. Gila, C. R. Abernathy, 2005 .

AIN-based dilute magnetic semiconductors

R. M. Frazier, F. Ren, G. Thaler, 2005 .

High breakdown voltage in AlN/GaN metal–insulator–semiconductor high-electron-mobility transistors

Stephen J. Pearton, Brent P. Gila, Ya-Hsi Hwang, 2014 .

The Role of the In Source IN InN Growth from Molecular Beams

C. Abernathy, B. Gila, R. Wilson, 1998 .

Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates

B. Gila, L. Voss, J. Kim, 2008 .

Drawing graphene nanoribbons on SiC by ion implantation

Sefaattin Tongay, Brent P. Gila, Bill R. Appleton, 2012 .

Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs

R. D. Briggs, C. R. Abernathy, F. Ren, 2003 .

Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System

C. Abernathy, B. Gila, A. Gerger, 2007 .

Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors.

Evan P. Donoghue, A. Rinzler, B. Appleton, 2012, ACS nano.

Stability of SiC Schottky Rectifiers to Rapid Thermal Annealing

G. Chung, F. Ren, K. Baik, 2003 .

Si+ ion implanted MPS bulk GaN diodes

C. R. Abernathy, J. Chyi, F. Ren, 2004 .

Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes

C. R. Abernathy, S. Pearton, B. Gila, 2007 .

High-Energy Proton Irradiation of MgO/GaN Metal Oxide Semiconductor Diodes

C. R. Abernathy, F. Ren, Y. Irokawa, 2002 .

Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors

Jenshan Lin, Stephen J. Pearton, Brent P. Gila, 2005 .

Thermal stability of OHMIC contacts to InN

F. Ren, S. Pearton, C. Abernathy, 1998 .

Microstructure and Thermal Stability of Aluminum Nitride Thin Films Deposited at Low Temperature on Silicon

C. R. Abernathy, F. Ren, S. Pearton, 2002 .

Room temperature hydrogen detection using Pd-coated GaN nanowires

Jason L. Johnson, Stephen J. Pearton, Brent P. Gila, 2008 .

Detection of CO using bulk ZnO Schottky rectifiers

B. S. Kang, K. Ip, D. Norton, 2005 .

Detection of C 2 H 4 Using Wide-Bandgap Semiconductor Sensors AlGaN/GaN MOS Diodes and Bulk ZnO Schottky Rectifiers

David P. Norton, Stephen J. Pearton, Brent P. Gila, 2004 .

Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping

Stephen J. Pearton, Fan Ren, B. P. Gila, 2012, Microelectron. Reliab..

Determination of the Reliability of AlGaN/GaN HEMTs through Trap Detection Using Optical Pumping

F. Ren, S. Pearton, B. Gila, 2012, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs

J. Kwo, F. Ren, S. Pearton, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).

Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O3

B. Gila, V. Craciun, D. Hays, 2023, Journal of Vacuum Science & Technology A.

Ultrashallow Junctions in Silicon Using Single‐Crystal CoSi2 as a Dopant Source

H. Gossmann, R. T. Tung, S. B. Herner, 1999 .

Effect of Nucleation Layer on the Magnetic Properties of GaMnN

R. M. Frazier, S. Pearton, G. Thaler, 2004 .

Effect of Mn concentration on the structural, optical, and magnetic properties of GaMnN

R. M. Frazier, S. Pearton, G. Thaler, 2004 .