Y. Ishikawa

T. Tsuchizawa, Koji Yamada, K. Wada, 2013, 2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC).

High-performance photonic integrated circuits based on Si-Ge-silica monolithic photonic platform

T. Tsuchizawa, K. Yamada, K. Wada, 2013, 2013 18th OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching (OECC/PS).

Si-Ge-Silica Monolithic Integration Platform and Its Application to a 22-Gb/s $\times$ 16-ch WDM Receiver

Hiroshi Fukuda, Koji Yamada, Yasuhiko Ishikawa, 2013, IEEE Photonics Journal.

Monolithic integration of silica-based AWG filter and germanium photodiodes for one-chip WDM receiver

H. Kimura, T. Tsuchizawa, K. Yamada, 2012, OFC/NFOEC.

Silicon-silica monolithic photonic integration platform for telecommunications applications

T. Tsuchizawa, K. Yamada, K. Wada, 2012, 2012 17th Opto-Electronics and Communications Conference.

Silicon-silica Monolithic Photonic Integration for Telecommunications Applications

T. Tsuchizawa, Koji Yamada, K. Wada, 2012 .

Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators.

Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, 2010, Optics express.

Luminescence enhancement by Si ring resonator structures on silicon on insulator

Yasuhiko Ishikawa, Kazumi Wada, Shiyun Lin, 2008 .

Enhanced photoluminescence from germanium-based ring resonators

Peng Huei Lim, Yasuhiko Ishikawa, Kazumi Wada, 2008 .

Strain and Absorption Coefficient of Finite Ge Structures on Si

K. Wada, Y. Ishikawa, Y. Tsusaka, 2008 .

Air-band optical resonators in one-dimensional Si photonic crystal waveguides for biosensing applications

K. Wada, Y. Ishikawa, E. Tamechika, 2014 .

Formation and ordering of self-assembled Si islands by ultrahigh vacuum annealing of ultrathin bonded silicon-on-insulator structure

M. Tabe, Y. Ishikawa, R. Nuryadi, 2000 .

Chiral germanium micro-gears for tuning orbital angular momentum

F. Gardes, Y. Ishikawa, S. Saito, 2022, Scientific Reports.

Enhanced direct bandgap emission from germanium-based ring resonators

K. Wada, Y. Ishikawa, P. Lim, 2008, 2008 5th IEEE International Conference on Group IV Photonics.

Single-electron tunneling in a silicon-on-insulator layer embedding an artificial dislocation network

M. Tabe, Y. Ishikawa, C. Yamamoto, 2006 .

Conductivity Enhancement in Thin Silicon-on-Insulator Layer Embedding Artificial Dislocation Network

M. Tabe, Y. Ishikawa, C. Yamamoto, 2005 .

Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

T. Tsuchizawa, K. Wada, Y. Ishikawa, 2015 .

Direct Bandgap Control by Narrowing the Germanium Strip Structure on Silicon for C+L Band Photonic Devices

T. Hizawa, J. Fujikata, Y. Ishikawa, 2022, IEEE Journal of Quantum Electronics.

Enhancement of L-band optical absorption in strained epitaxial Ge on Si-on-quartz wafer: Toward extended Ge photodetectors

Y. Ishikawa, Y. Tsusaka, J. Matsui, 2020 .

Effect of nanometer-scale corrugation on densities of gap states and fixed charges at the thermally grown SiO2/Si interface

M. Tabe, Y. Ishikawa, M. Kosugi, 2001 .

Fabrication and responsivity spectra of p-Ge/i-Si/n-Si near-infrared photodiodes

K. Wada, Y. Ishikawa, J. Osaka, 2008, 2008 5th IEEE International Conference on Group IV Photonics.

Present State of the Surface Potential Measurements by Kelvin Force Microscopy. Potential Measurement of Si Nano-structures by Kelvin Probe Force Microscopy.

M. Tabe, Y. Ishikawa, T. Kamimura, 2001 .

Silicon photonic devices and their integration technology

T. Tsuchizawa, Toshifumi Watanabe, S. Itabashi, 2011, 2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference.

Avalanche-mode operation of a simple vertical p-i-n germanium photodiode coupled with a silicon waveguide

T. Tsuchizawa, S. Itabashi, K. Yamada, 2011, 8th IEEE International Conference on Group IV Photonics.

Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer

M. Tabe, Y. Ishikawa, Z. A. Burhanudin, 2006 .

In-Situ Scanning Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2×4) Surface

T. Fukui, H. Hasegawa, Y. Ishikawa, 1998 .

Missing-Dimer Structures and Their Kink Defects on Molecular Beam Epitaxially Grown ( 2×4) Reconstructed (001) InP and GaAs Surfaces Studied by Ultrahigh-Vacuum Scanning Tunneling Microscopy

Y. Ishikawa, Hideki Hasegawa Hideki Hasegawa, Takashi Fukui Takashi Fukui, 1997 .

Formation of high-density silicon dots on a silicon-on-insulator substrate

M. Tabe, Y. Ishikawa, T. Yamaguchi, 1999 .

Ambipolar Coulomb blockade characteristics in a two-dimensional Si multidot device

H. Ikeda, M. Tabe, Y. Ishikawa, 2003 .

Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si∕SiO2 double-barrier structure

H. Ikeda, M. Tabe, Y. Ishikawa, 2005 .

Field electron emission device using silicon nanoprotrusions

M. Ishida, K. Sawada, M. Tabe, 2002 .

Electron field emission from silicon nanoprotrusions

M. Ishida, K. Sawada, M. Tabe, 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).

Quantum confinement effects in Si quantum well and dot structures fabricated from ultrathin silicon-on-insulator wafers

M. Tabe, Y. Ishikawa, T. Mizuno, 2001 .

Capacitance voltage study of single-crystalline Si dots on ultrathin buried SiO2 formed by nanometer-scale local oxidation

M. Tabe, T. Tsuchiya, Y. Ishikawa, 2000 .

Si-Ge intermixing induced at mesa sidewalls of Si-capped Ge epitaxial layers on Si for operation wavelength tuning in Ge photonic devices

Yasuhiko Ishikawa, Kazuki Kawashita, Riku Katamawari, 2019, SPIE/COS Photonics Asia.

Enhanced direct-gap light emission from Si-capped n+-Ge epitaxial layers on Si after post-growth rapid cyclic annealing: impact of non-radiative interface recombination toward Ge/Si double heterostructure lasers.

Y. Ishikawa, N. Higashitarumizu, 2017, Optics express.

N-type doping of germanium epilayer on silicon by ex-situ phosphorus diffusion based on POCl3 phosphosilicate glass

K. Wada, D. Ahn, Y. Ishikawa, 2018, Thin Solid Films.

A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer

Koji Yamada, Yasuhiko Ishikawa, Motoki Yako, 2017, Science and technology of advanced materials.

Atomic structure studies of (113)B GaAs surfaces grown by metalorganic vapor phase epitaxy

T. Fukui, Y. Ishikawa, M. Kawase, 1998 .

Ultra high vacuum scanning tunneling microscope observation of vicinal (001) GaAs surface and (117)B GaAs surface grown by metalorganic vapor phase epitaxy

T. Fukui, Y. Ishikawa, M. Kawase, 1997 .

In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2×4) GaAs Surfaces

H. Hasegawa, T. Hashizume, Y. Ishikawa, 1997 .

Effects of gap states on scanning tunneling spectra observed on (110)- and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy

Seiya Kasai, Hideki Hasegawa, Yasuhiko Ishikawa, 2000 .

Gas Cluster Ion Beam Processing for Si Photonics

L. Kimerling, K. Wada, Y. Ishikawa, 2007, 2007 4th IEEE International Conference on Group IV Photonics.

Feasibility of Plasmonic Circuits Merged with Silicon Integrated Circuits

M. Fukuda, Y. Ishikawa, Y. Tonooka, 2020, 2020 Pan Pacific Microelectronics Symposium (Pan Pacific).

Feasibility of Plasmonic Circuits in Nanophotonics

Mitsuo Fukuda, Yasuhiko Ishikawa, Shinya Okahisa, 2020, IEEE Access.

Reduced Threading Dislocation Density in a Ge Epitaxial Film on a Submicron-Patterned Si Substrate Grown by Chemical Vapor Deposition

T. Hizawa, Y. Ishikawa, Jose A. Piedra-Lorenzana, 2023, Journal of Electronic Materials.

Simulation and Evaluation of Plasmonic Circuits

M. Fukuda, Y. Ishikawa, 2020, 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Pattern-induced alignment of silicon islands on buried oxide layer of silicon-on-insulator structure

Yasuhiko Ishikawa, Hiroya Ikeda, Michiharu Tabe, 2003 .

Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.

Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, 2012, Optics express.

Effect of patterning on thermal agglomeration of ultrathin silicon-on-insulator layer

M. Tabe, Y. Ishikawa, R. Nuryadi, 2002 .

Impact of interface recombination on direct-gap photoluminescence from Ge epitaxial layers on Si

Y. Ishikawa, M. Yako, N. Higashitarumizu, 2019, Japanese Journal of Applied Physics.

Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si ( 100 )

Yasuhiko Ishikawa, Kazumi Wada, Jurgen Michel, 2004 .

Germanium as a Material to Enable Silicon Photonics

Yasuhiko Ishikawa, Kazumi Wada, Shinya Takita, 2011 .

Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications

Yasuhiko Ishikawa, Kazumi Wada, Jurgen Michel, 2004 .

Silicidation-induced band gap shrinkage in Ge epitaxial films on Si

Yasuhiko Ishikawa, Kazumi Wada, Jurgen Michel, 2004 .

Strain-enhanced Ge epitaxial layer on Si-on-quartz wafer for near-infrared photonic devices

Yasuhiko Ishikawa, Moïse Sotto, Asahi Degawa, 2020, SPIE/COS Photonics Asia.

Spin-on doping of germanium-on-insulator wafers for monolithic light sources on silicon

S. Iwamoto, Y. Arakawa, H. Arimoto, 2015 .

Macroscopic electronic behavior and atomic arrangements of GaAs surfaces immersed in HCl solution

T. Fukui, H. Hasegawa, Y. Ishikawa, 1994 .

Low Threshold Light Emission from Reverse-Rib n+ Ge Cavity Made by P Diffusion

K. Wada, D. Ahn, Y. Ishikawa, 2016 .

Hydrogen plasma treatment for Si waveguide smoothing

K. Wada, Y. Ishikawa, Jingnan Cai, 2011, 8th IEEE International Conference on Group IV Photonics.

Resonant tunneling characteristics in SiO2/Si double-barrier structures in a wide range of applied voltage

H. Ikeda, M. Tabe, Y. Ishikawa, 2003 .

Effect of structural imperfection on resonant tunneling in SiO/sub 2//Si diodes

H. Ikeda, M. Tabe, Y. Ishikawa, 2002, 2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers..

Negative differential conductance due to resonant tunnelling through SiO/sub 2//single-crystalline-Si double barrier structure

M. Tabe, Y. Ishikawa, T. Ishihara, 2001 .

Si multidot single-charge tunneling devices

H. Ikeda, M. Tabe, Y. Ishikawa, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

Capacitance-Voltage Study of Silicon-on-Insulator Structure with an Ultrathin Buried SiO2 Layer Fabricated by Wafer Bonding

M. Tabe, T. Tsuchiya, Y. Ishikawa, 1999 .

A New Approach Using Backside Scatterers for Efficiency Enhancement in Thin Si Solar Cells

K. Wada, Y. Ishikawa, R. Ichikawa, 2010 .

Measurement of near-infrared OH-group absorption using Si ring resonator

K. Wada, Y. Ishikawa, Jingnan Cai, 2010, OECC 2010 Technical Digest.

Post-Growth Laser Annealing for High-Performance Ge Photodiodes on Si

Y. Ishikawa, Y. Izawa, S. Nagatomo, 2014 .

Emission-wavelength control using a mechanically stressed micro-beam structure: GaAs on Si-on-insulator beam

K. Wada, Y. Ishikawa, J. Osaka, 2010, 7th IEEE International Conference on Group IV Photonics.

Enhanced direct bandgap emission in germanium by micromechanical strain engineering.

Peng Huei Lim, Yasuhiko Ishikawa, Kazumi Wada, 2009, Optics express.