L. Lever

Design of Ge–SiGe Quantum-Confined Stark Effect Electroabsorption Heterostructures for CMOS Compatible Photonics

Z. Ikonic, R. Kelsall, A. Valavanis, 2010, Journal of Lightwave Technology.

Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon.

M Myronov, F Y Gardes, Z. Ikonic, 2011, Optics letters.

Adiabatic mode coupling between SiGe photonic devices and SOI waveguides.

Z. Ikonic, R. Kelsall, L. Lever, 2012, Optics express.

Extended density-matrix model applied to silicon-based terahertz quantum cascade lasers

R. Kelsall, A. Valavanis, Z. Ikoni'c, 2012, 1206.0280.

A scattering rate approach to the understanding of absorption line broadening in near-infrared AlGaN/GaN quantum wells 6th Space Agency – MOD Workshop on Wideband Gap Semiconductors and Components

D. Indjin, A. Valavanis, L. Lever, 2013 .

Substrate orientation and alloy composition effects in n-type SiGe quantum cascade structures

R. Kelsall, A. Valavanis, L. Lever, 2008, 2008 5th IEEE International Conference on Group IV Photonics.

Theory and design of quantum cascade lasers in (111) n-type Si/SiGe

R. W. Kelsall, A. Valavanis, C. A. Evans, 2008, 0908.0557.

Terahertz ambipolar dual-wavelength quantum cascade laser.

A. Davies, E. Linfield, P. Harrison, 2009, Optics express.

Material configurations for n-type silicon-based terahertz quantum cascade lasers

R. Kelsall, A. Valavanis, Z. Ikoni'c, 2011, 1104.1727.