M. Myronov

M. Myronov, D. Leadley, S. Rhead, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

Analysis of surface defects in Si1−yCyepilayers formed by the oversaturation of carbon

M. Myronov, D. Leadley, S. Rhead, 2015 .

RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors

M. Myronov, D. Leadley, S. Rhead, 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).

Silicon-Based Cooling Elements

Hung Q. Nguyen, P. Mauskopf, Qing-Tai Zhao, 2014 .

Room-temperature Transport Properties of High Drift Mobility Two-dimensional Electron Gas Confined in a Strained Si Quantum Well

Y. Shiraki, K. Itoh, M. Myronov, 2008 .

Continuous-Wave Magneto-Optical Determination of the Carrier Lifetime in Coherent Ge1−xSnx/Ge Heterostructures

E. O’Reilly, M. Myronov, F. Pezzoli, 2020, Physical Review Applied.

The germanium quantum information route

D. Loss, M. Veldhorst, M. Myronov, 2020, Nature Reviews Materials.

Reverse graded relaxed buffers for high Ge content SiGe virtual substrates

M. Myronov, D. Leadley, V. Shah, 2008 .

Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates

M. Myronov, D. Leadley, V. Shah, 2010 .

Ultra-high hole mobility exceeding one million in a strained germanium quantum well

M. Myronov, D. Leadley, E. Parker, 2012 .

Anisotropy in the hole mobility measured along the [110] and [1̄10] orientations in a strained Ge quantum well

M. Myronov, D. Leadley, R. Beanland, 2014 .

Spinless composite fermions in an ultrahigh-quality strained Ge quantum well

M. Myronov, Q. Shi, M. Zudov, 2015, 1511.05164.

Terahertz quantum Hall effect for spin-split heavy-hole gases in strained Ge quantum wells

J. Faist, G. Scalari, J. Lloyd‐Hughes, 2016 .

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

M. Myronov, D. Leadley, C. Casteleiro, 2016 .

Spin-splitting in p-type Ge devices

M. Myronov, R. Mansell, C. Barnes, 2016 .

Quantum ballistic transport in strained epitaxial germanium

M. Pepper, M. Myronov, C. Barnes, 2017 .

Ballistic One-Dimensional Holes with Strong g-Factor Anisotropy in Germanium.

M. Myronov, S. de Franceschi, R. Maurand, 2018, Nano letters.

Self-organised fractional quantisation in a hole quantum wire.

M. Pepper, M. Myronov, S. Kumar, 2018, Journal of physics. Condensed matter : an Institute of Physics journal.

Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2

M. Myronov, D. Leadley, E. Parker, 2014 .

High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics

M. Myronov, D. Leadley, A. Dobbie, 2011 .

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

U. Konig, T. Hackbarth, G. Höck, 2004 .

Reduced 1/f noise at 293 K in 0.55 /spl mu/m p-Si/sub 0.3/Ge/sub 0.7/ hetero-MOSFETs

U. Konig, T. Hackbarth, M. Myronov, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Reduced 1/f noise at 293K in 0.55 μm p-Si0.3Ge0.7 hetero-MOSFETs

T. Hackbarth, M. Myronov, D. Leadley, 2003 .

Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs

P. Mawby, M. Myronov, D. Hamilton, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Understanding the effect of p-, n-type dopants and vinyl carbonate electrolyte additive on electrochemical performance of Si thin film anodes for lithium-ion battery

M. Myronov, Z. Bakenov, A. Mukanova, 2020 .

A Strained Silicon Cold Electron Bolometer using Schottky Contacts

P. Mauskopf, M. Prunnila, R. Sudiwala, 2014, 1407.2113.

Characterization of SiGe thin films using a laboratory X-ray instrument

M. Myronov, J. Halpin, A. Mikhalychev, 2013, Journal of applied crystallography.

Mapping the strain and tilt of a suspended 3C-SiC membrane through micro X-ray diffraction

M. Myronov, D. Leadley, V. Shah, 2016 .

Critical Mode Softening in Ultra-Strong Coupling of Landau Level Transitions to THz Metamaterials Beyond the Hopfield Model

J. Faist, G. Scalari, J. Lloyd‐Hughes, 2018, 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

Highly non-parabolic strained Ge quantum well for THz ultra-strong light-matter coupling

J. Faist, G. Scalari, J. Lloyd‐Hughes, 2017, 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).

Ultra-strong coupling with spin-split heavy-hole cyclotron resonances in strained Ge quantum wells

J. Faist, G. Scalari, J. Lloyd‐Hughes, 2016, 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).

Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity

M. Myronov, D. Leadley, A. Dobbie, 2011 .

Tuning the electroluminescence of n-Ge LEDs using process induced strain

M. Myronov, D. Leadley, D. Paul, 2012, The 9th International Conference on Group IV Photonics (GFP).

Direct band-gap electroluminescence from strained n-doped Germanium diodes

M. Myronov, D. Leadley, D. Paul, 2012, 2012 Conference on Lasers and Electro-Optics (CLEO).

Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature

Y. Shiraki, K. Itoh, M. Myronov, 2008 .

Strained Si and Ge Channels

M. Myronov, D. Leadley, E. Parker, 2010 .

Self-organised fractional quantisation in a hole quantum wire

M. Pepper, M. Myronov, S. Kumar, 2018, Journal of physics. Condensed matter : an Institute of Physics journal.

Silver antimony Ohmic contacts to moderately doped n-type germanium

M. Myronov, D. Leadley, D. Paul, 2014 .

Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si(1-x)Ge(x)/Ge quantum well structures.

M. Myronov, D. Leadley, R. Beanland, 2012, Analytical chemistry.

Tensile strained GeSn mid-infrared light emitters

M. Myronov, D. Paul, K. Gallacher, 2017, 2017 IEEE 14th International Conference on Group IV Photonics (GFP).

Growth of complex SiGe/Ge superlattices by reduced pressure chemical vapour deposition at low temperature

M. Myronov, D. Leadley, A. Sánchez, 2015 .

N-type doped amorphous Si thin film on a surface of rough current collector as anode for Li-ion batteries

M. Myronov, Z. Bakenov, A. Mukanova, 2018 .

Strained germanium nanostructures on silicon emitting at >2.2 µm wavelength

M. Myronov, D. Leadley, D. Paul, 2013, 10th International Conference on Group IV Photonics.

O2+ probe‐sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells

M. Myronov, D. Leadley, R. Beanland, 2013 .

An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition

M. Myronov, D. Leadley, V. Shah, 2014 .

Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of Two-Dimensional Hole Gas in a Strained Ge Quantum Well

Y. Shiraki, K. Itoh, M. Myronov, 2008 .

Ultra-High Hall Mobility (1 x 106 cm2V-1S-1) in a Two-Dimensional Hole Gas in a Strained Germanium Quantum Well Grown by Reduced Pressure CVD

M. Myronov, D. Leadley, T. Whall, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

M. Myronov, G. Colston, 2017 .

The germanium quantum information route

D. Loss, M. Veldhorst, M. Myronov, 2020, Nature Reviews Materials.

Interfacial Engineering of Semiconductor–Superconductor Junctions for High Performance Micro-Coolers

D Gunnarsson, J S Richardson-Bullock, M J Prest, 2015, Scientific Reports.

Comparison of electron–phonon and hole–phonon energy loss rates in silicon

M. Prunnila, M. Myronov, D. Leadley, 2015 .

Hole-phonon energy loss rate in boron doped silicon

M. Prunnila, M. Myronov, D. Leadley, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

Strain enhanced electron cooling in a degenerately doped semiconductor

M. Prunnila, J. Muhonen, M. Myronov, 2011, 1111.0465.

Thermal Isolation Through Nanostructuring

J. Pekola, M. Prunnila, J. Ahopelto, 2014 .

Temperature dependence of the breakdown of the quantum Hall effect studied by induced currents

D. Ritchie, M. Henini, M. Simmons, 2004 .

Self-diffusion in compressively strained Ge

E. Haller, Y. Shiraki, K. Itoh, 2011 .

Electronic transport anisotropy of 2D carriers in biaxial compressive strained germanium

M. Myronov, C. Morrison, 2017 .

Enhancement of hole mobility and carrier density in Ge quantum well of SiGe heterostructure via implementation of double-side modulation doping

Y. Shiraki, M. Myronov, K. Sawano, 2006 .

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

M. Myronov, D. Leadley, A. Dobbie, 2013 .

Laser-vibrometric ultrasonic characterization of resonant modes and quality factors of Ge membranes

M. Myronov, O. Trushkevych, Vishal A Shah, 2014, Science and technology of advanced materials.

N‐Type Doped Silicon Thin Film on a Porous Cu Current Collector as the Negative Electrode for Li‐Ion Batteries

M. Myronov, Z. Bakenov, A. Mukanova, 2017, ChemistryOpen.

Silicon thin film on graphene coated nickel foam as an anode for Li-ion batteries

M. Myronov, Z. Bakenov, A. Mukanova, 2017 .

Hole weak anti-localization in a strained-Ge surface quantum well

M. Myronov, S. Franceschi, R. Maurand, 2017, 1704.02879.

RBS ANALYSIS OF MBE GROWN SiGe/(001)Si HETEROSTRUCTURES WITH THIN HIGH Ge CONTENT SiGe CHANNELS FOR HMOS TRANSISTORS

M. Myronov, E. Parker, N. Barradas, 2001 .

Landau polaritons in highly nonparabolic two-dimensional gases in the ultrastrong coupling regime

M. Beck, J. Faist, G. Scalari, 2017, Physical Review B.

Weak antilocalization of high mobility holes in a strained Germanium quantum well heterostructure

M. Myronov, S. Rhead, J. Halpin, 2015, Journal of physics. Condensed matter : an Institute of Physics journal.

Voided Ge/Si Platform to Integrate III-V Materials on Si

Youcef A. Bioud, G. Patriarche, M. Myronov, 2019, ECS Transactions.

High-quality Ge/Si virtual substrates fabricated by a low cost and scalable process

Dominique Drouin, Gilles Patriarche, Richard Arès, 2018 .

Understanding the Role of the Low Temperature Seed Layer in the Growth of Low Defect Relaxed Germanium Layers on (111) Silicon by Reduced Pressure CVD

M. Myronov, D. Leadley, A. Dobbie, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Magnetotransport in low-density p-Si/SiGe heterostructures: From metal through hopping insulator to Wigner glass

M. Myronov, D. Leadley, V. Vinokur, 2007, 0712.0716.

Activated and Metallic Conduction in p -Type Modulation-Doped Ge - Sn Devices

M. Pepper, M. Myronov, S. Holmes, 2020, Physical Review Applied.

Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas

Maksym Myronov, Christopher Morrison, Stephen Rhead, 2014 .

Bunches of misfit dislocations on the onset of relaxation of Si0.4Ge0.6/Si(001) epitaxial films revealed by high-resolution x-ray diffraction

M. Myronov, A. Ulyanenkov, V. Kaganer, 2017, 1706.02954.

Low-temperature conductance mechanisms in p-Si/SiGe heterostructures in high magnetic fields

M. Myronov, V. Vinokur, O. Mironov, 2008 .

High-frequency transport in p -type Si/ Si 0.87 Ge 0.13 heterostructures studied with surface acoustic waves in the quantum Hall regime

A. M. Diakonov, M. Myronov, D. Leadley, 2004, cond-mat/0411513.

Wigner glass formation in 2DHG of p-Si/SiGe by high magnetic fields

M. Myronov, V. Vinokur, O. Mironov, 2009 .

Static and high-frequency hole transport in p-Si/SiGe heterostructures in the extreme quantum limit

M. Myronov, V. Vinokur, O. Mironov, 2007 .

Enhancement of hole conductance in the Ge quantum well of a SiGe heterostructure via realization of double-side modulation doping

Y. Shiraki, M. Myronov, K. Sawano, 2006 .

Microminiature Hall probes based on n-InSB(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to 52 T

J. Leotin, O. Drachenko, M. Myronov, 2004 .

Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructure

C. Marrows, M. Myronov, F. Herling, 2017 .

Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization

E. Linfield, C. Marrows, M. Myronov, 2016, 1610.09749.

Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration

M. Myronov, D. Leadley, V. Shah, 2012 .

High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate

Y. Shiraki, M. Myronov, D. Leadley, 2009 .

Comparison of cross‐sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers

T. Walther, M. Myronov, D. Leadley, 2017, Journal of microscopy.

A new method of investigating the quantum channel surface

V. Andrievskii, M. Myronov, D. Leadley, 2008 .

Non-linear vibrational response of Ge and SiC membranes

R. Prince, M. Myronov, D. Leadley, 2017 .

Modelling the inhomogeneous SiC Schottky interface

Philip A. Mawby, Evgeniy Donchev, Jing S. Pang, 2013 .

Flexural mode dispersion in ultra-thin Ge membranes

E. Chavez, F. Alzina, C. S. Sotomayor Torres, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

Ge x nanowire arrays for thermoelectric power generation

K. Fobelets, M. Myronov, Bin Xu, 2013 .

Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD

M. Myronov, D. Leadley, A. Dobbie, 2011 .

Temperature-dependent high-current breakdown of the quantum Hall effect

D. Ritchie, M. Henini, M. Simmons, 2004 .

Calibration of thickness-dependent k-factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy

T. Walther, M. Myronov, A. Dobbie, 2013 .

Ultrasonic Inspection and Self-Healing of Ge and 3C-SiC Semiconductor Membranes

M. Myronov, D. Leadley, V. Shah, 2020, Journal of Microelectromechanical Systems.

Laser ultrasonic characterization of membranes for use as micro-electronic mechanical systems (MEMS)

R. Prince, M. Myronov, D. Leadley, 2017 .

Electrical properties and strain distribution of Ge suspended structures

C. M. Torres, M. Myronov, D. Leadley, 2015 .

High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate

M. Myronov, D. Leadley, V. Shah, 2011 .

High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform

M. Myronov, D. Leadley, V. Shah, 2010 .

Electrical characterization of n-doped SiGeSn diodes with high Sn content

J. Schulze, B. Tillack, M. Oehme, 2018, Semiconductor Science and Technology.

Holes Outperform Electrons in Group IV Semiconductor Materials

P. Coleridge, M. Myronov, P. Barrios, 2023, Small Science.

Spin-coherent dynamics and carrier lifetime in strained Ge1−xSnx semiconductors on silicon

E. Grilli, M. Myronov, F. Pezzoli, 2019, Physical Review B.

Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon

E. Grilli, M. Myronov, F. Pezzoli, 2017, 1710.05792.

The effect of Ge precursor on the heteroepitaxy of Ge1−xSnx epilayers on a Si (001) substrate

J. Schulze, M. Myronov, P. Allred, 2018 .

Strained germanium for applications in spintronics

M. Myronov, C. Morrison, 2016 .

Evidence of strong spin–orbit interaction in strained epitaxial germanium

M. Myronov, D. Leadley, S. Rhead, 2016 .

Revealing high room and low temperatures mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate

M. Myronov, D. Leadley, S. Rhead, 2015 .

Temperature dependence of transport properties of high mobility holes in Ge quantum wells

T. Irisawa, S. Koh, Y. Shiraki, 2005 .

Carrier Dynamics in Thin Germanium–Tin Epilayers

M. Syperek, M. Myronov, R. Kudrawiec, 2021, ACS Applied Electronic Materials.

Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures

Y. Shiraki, K. Itoh, M. Myronov, 2007 .

Mobility spectrum computational analysis using a maximum entropy approach.

M Myronov, M. Myronov, T. Whall, 2002, Physical review. E, Statistical, nonlinear, and soft matter physics.

Experimental Demonstration of Room-Temperature Spin Transport in n-Type Germanium Epilayers.

M. Myronov, M. Shiraishi, T. Shinjo, 2015, Physical review letters.

Weak localization and weak antilocalization in doped germanium epilayers

M. Myronov, R. Mansell, C. Barnes, 2017 .

Magnetotransport in p-type Ge quantum well narrow wire arrays

M. Myronov, D. Leadley, R. Mansell, 2015 .

Minority carrier lifetime in indium doped silicon for photovoltaics

M. Myronov, V. Voronkov, R. Falster, 2019, Progress in Photovoltaics: Research and Applications.

Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0)

C. Fisher, P. Mawby, Y. Sharma, 2015 .

Kirkendall void formation in reverse step graded Si1−xGex/Ge/Si(001) virtual substrates

M. Myronov, D. Leadley, S. Rhead, 2018 .

Weak localization and charge-carrier interaction effects in a two-dimensional hole gas in a germanium quantum well in a SiGe∕Ge∕SiGe heterostructure

V. Andrievskii, M. Myronov, D. Leadley, 2006 .

N-type SiGe/Ge superlattice structures for terahertz emission

M. Myronov, D. Leadley, S. Rhead, 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).

The Cryogenic Testing and Characterisation of SiC Diodes

C. Fisher, P. Mawby, M. Myronov, 2014 .

Electron beam lithography and dimensional metrology for fin and nanowire devices on Ge, SiGe and GeOI substrates

R. Duffy, M. Myronov, G. Fagas, 2023, Microelectronic Engineering.

Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process

M. Myronov, D. Leadley, T. Whall, 2012 .

Developments in germanium-on-silicon epitaxy by reduced pressure chemical vapor deposition

M. Myronov, D. Leadley, P. Allred, 2014, 2014 15th International Conference on Ultimate Integration on Silicon (ULIS).

Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates

James J. Mudd, I. Maskery, S. Wilkins, 2013, Crystal growth & design.

Hooge Mobility Fluctuations in n-InSb Magnetoresistors As a Reference for Access Resistance LF-Noise Measurements of SiGe Metamorphic HMOS FETs

M. Myronov, T. Whall, O. Mironov, 2004 .

Simulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature Applications

C. W. Chan, P. Mawby, M. Myronov, 2015 .

Cryogenic Characterization of Commercial SiC Power MOSFETs

C. Fisher, P. Mawby, S. Jahdi, 2015 .

The Stranski–Krastanow transition in SiGe epitaxy investigated by scanning transmission electron microscopy

T. Walther, M. Myronov, D. Leadley, 2013 .

Tensile strain mapping in flat germanium membranes

M. Myronov, D. Leadley, V. Shah, 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).

Electrical properties of n-type 3C-SiC epilayers in situ doped with extremely high levels of phosphorus

M. Myronov, G. Colston, 2018, Semiconductor Science and Technology.

High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates

M. Myronov, D. Leadley, A. Dobbie, 2011 .

Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates

T. Walther, M. Myronov, D. Leadley, 2012 .

Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields

M. Myronov, Q. Shi, M. Zudov, 2015, 1511.05167.

Features of the Shubnikov–de Haas oscillations of the conductivity of a high-mobility two-dimensional hole gas in a SiGe∕Ge∕SiGe quantum well

V. Andrievskii, M. Myronov, D. Leadley, 2006 .