D. Leadley

M. Myronov, D. Leadley, S. Rhead, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

Analysis of surface defects in Si1−yCyepilayers formed by the oversaturation of carbon

M. Myronov, D. Leadley, S. Rhead, 2015 .

RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors

M. Myronov, D. Leadley, S. Rhead, 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).

Silicon-Based Cooling Elements

Hung Q. Nguyen, P. Mauskopf, Qing-Tai Zhao, 2014 .

Reverse graded relaxed buffers for high Ge content SiGe virtual substrates

M. Myronov, D. Leadley, V. Shah, 2008 .

Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates

M. Myronov, D. Leadley, V. Shah, 2010 .

Ultra-high hole mobility exceeding one million in a strained germanium quantum well

M. Myronov, D. Leadley, E. Parker, 2012 .

Anisotropy in the hole mobility measured along the [110] and [1̄10] orientations in a strained Ge quantum well

M. Myronov, D. Leadley, R. Beanland, 2014 .

Terahertz quantum Hall effect for spin-split heavy-hole gases in strained Ge quantum wells

J. Faist, G. Scalari, J. Lloyd‐Hughes, 2016 .

Fractional Quantum Hall States in a Ge Quantum Well.

D. Leadley, A. Dobbie, O. Mironov, 2015, Physical review letters.

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

M. Myronov, D. Leadley, C. Casteleiro, 2016 .

Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2

M. Myronov, D. Leadley, E. Parker, 2014 .

High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics

M. Myronov, D. Leadley, A. Dobbie, 2011 .

Reduced 1/f noise at 293 K in 0.55 /spl mu/m p-Si/sub 0.3/Ge/sub 0.7/ hetero-MOSFETs

U. Konig, T. Hackbarth, M. Myronov, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Reduced 1/f noise at 293K in 0.55 μm p-Si0.3Ge0.7 hetero-MOSFETs

T. Hackbarth, M. Myronov, D. Leadley, 2003 .

Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well

D. Leadley, O. Mironov, Peter D. Martin, 2014 .

Millikelvin Tunnelling Refrigerators

D. Leadley, E. Parker, M. Prest, 2012 .

A Strained Silicon Cold Electron Bolometer using Schottky Contacts

P. Mauskopf, M. Prunnila, R. Sudiwala, 2014, 1407.2113.

Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates

D. Leadley, T. Grasby, C. Beer, 2008 .

Interference effects in silicon-germanium heterostructures with quantum wells of different widths

V. Andrievskii, D. Leadley, O. Mironov, 2016 .

Mapping the strain and tilt of a suspended 3C-SiC membrane through micro X-ray diffraction

M. Myronov, D. Leadley, V. Shah, 2016 .

Highly non-parabolic strained Ge quantum well for THz ultra-strong light-matter coupling

J. Faist, G. Scalari, J. Lloyd‐Hughes, 2017, 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).

Ultra-strong coupling with spin-split heavy-hole cyclotron resonances in strained Ge quantum wells

J. Faist, G. Scalari, J. Lloyd‐Hughes, 2016, 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).

Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity

M. Myronov, D. Leadley, A. Dobbie, 2011 .

Tuning the electroluminescence of n-Ge LEDs using process induced strain

M. Myronov, D. Leadley, D. Paul, 2012, The 9th International Conference on Group IV Photonics (GFP).

Direct band-gap electroluminescence from strained n-doped Germanium diodes

M. Myronov, D. Leadley, D. Paul, 2012, 2012 Conference on Lasers and Electro-Optics (CLEO).

Strained Si and Ge Channels

M. Myronov, D. Leadley, E. Parker, 2010 .

Introduction to Part 1

D. Leadley, A. Dobbie, V. Shah, 2013 .

Silver antimony Ohmic contacts to moderately doped n-type germanium

M. Myronov, D. Leadley, D. Paul, 2014 .

Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si(1-x)Ge(x)/Ge quantum well structures.

M. Myronov, D. Leadley, R. Beanland, 2012, Analytical chemistry.

Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates

D. Leadley, E. Parker, T. Grasby, 2007 .

Application of Bryan's algorithm to the mobility spectrum analysis of semiconductor devices

D. Leadley, D. Chrastina, J. Hague, 2003, cond-mat/0308429.

Growth of complex SiGe/Ge superlattices by reduced pressure chemical vapour deposition at low temperature

M. Myronov, D. Leadley, A. Sánchez, 2015 .

High-Beld magnetoresistance in GaAs/Ga07A103As heterojunctions arising fram elastic and inelastic scattering

J. Harris, C. Foxon, J. Devreese, 1993 .

Strained germanium nanostructures on silicon emitting at >2.2 µm wavelength

M. Myronov, D. Leadley, D. Paul, 2013, 10th International Conference on Group IV Photonics.

Polaron Effects and Optic Phonon Scattering in Heterostructures

D. Leadley, R. Nicholas, Hopkins Ma, 1988 .

Skyrmions and composite fermions in the limit of vanishing Zeeman energy

J. Harris, C. Foxon, D. Leadley, 1998 .

SKYRMIONS AND COMPOSITE FERMIONS FOR G*=0

J. Harris, C. Foxon, D. Leadley, 1998 .

The unifying role of effective field in the composite fermion model of the fractional quantum Hall effect

J. Harris, C. Foxon, M. V. D. Burgt, 1996 .

Inter-subband scattering rates in GaAs-GaAlAs heterojunctions

J. Harris, C. Foxon, D. Leadley, 1990 .

Influence of acoustic phonons on inter-subband scattering in GaAs-GaAlAs heterojunctions

J. Harris, C. Foxon, D. Leadley, 1989 .

O2+ probe‐sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells

M. Myronov, D. Leadley, R. Beanland, 2013 .

An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition

M. Myronov, D. Leadley, V. Shah, 2014 .

Direct demonstration of the transverse Stern–Gerlach effect

D. Leadley, R. F. Pettifer, J. Porter, 2003 .

Ultra-High Hall Mobility (1 x 106 cm2V-1S-1) in a Two-Dimensional Hole Gas in a Strained Germanium Quantum Well Grown by Reduced Pressure CVD

M. Myronov, D. Leadley, T. Whall, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Spin transport in germanium at room temperature

D. Ritchie, T. Trypiniotis, D. Leadley, 2010 .

Interfacial Engineering of Semiconductor–Superconductor Junctions for High Performance Micro-Coolers

D Gunnarsson, J S Richardson-Bullock, M J Prest, 2015, Scientific Reports.

Superconducting platinum silicide for electron cooling in silicon

M. Prunnila, J. Muhonen, D. Leadley, 2014, 1405.4119.

Comparison of electron–phonon and hole–phonon energy loss rates in silicon

M. Prunnila, M. Myronov, D. Leadley, 2015 .

Tunnel Junction Electronic Coolers

D. Leadley, E. Parker, M. Prest, 2014 .

Hole-phonon energy loss rate in boron doped silicon

M. Prunnila, M. Myronov, D. Leadley, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

Strain enhanced electron cooling in a degenerately doped semiconductor

M. Prunnila, J. Muhonen, M. Myronov, 2011, 1111.0465.

Thermal Isolation Through Nanostructuring

J. Pekola, M. Prunnila, J. Ahopelto, 2014 .

Using platinum silicide as a superconductor for silicon electron coolers

M. Prunnila, J. Muhonen, D. Leadley, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

Temperature dependence of the breakdown of the quantum Hall effect studied by induced currents

D. Ritchie, M. Henini, M. Simmons, 2004 .

Cyclotron phonon emission and electron energy loss rates in GaAsGaAlAs heterojunctions

J. Harris, C. Foxon, D. Leadley, 1989 .

Cyclotron phonon emission and electron energy loss rates in GaAs-GaAlAs heterojunctions

J. Harris, C. Foxon, D. Leadley, 1989 .

Competition between LO and TO phonon scattering in GaAs/GaAlAs heterojunctions

J. Harris, C. Foxon, D. Leadley, 1988 .

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

M. Myronov, D. Leadley, A. Dobbie, 2013 .

Landau polaritons in highly nonparabolic two-dimensional gases in the ultrastrong coupling regime

M. Beck, J. Faist, G. Scalari, 2017, Physical Review B.

FRACTIONAL QUANTUM HALL EFFECT MEASUREMENTS AT ZERO G FACTOR

J. Harris, C. Foxon, D. Leadley, 1997, cond-mat/9706157.

Searches for skyrmions in the limit of zero -factor

J. Harris, C. Foxon, D. Leadley, 1998, cond-mat/9805357.

Understanding the Role of the Low Temperature Seed Layer in the Growth of Low Defect Relaxed Germanium Layers on (111) Silicon by Reduced Pressure CVD

M. Myronov, D. Leadley, A. Dobbie, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Magnetotransport in low-density p-Si/SiGe heterostructures: From metal through hopping insulator to Wigner glass

M. Myronov, D. Leadley, V. Vinokur, 2007, 0712.0716.

Critical collapse of the exchange-enhanced spin splitting in two-dimensional systems

I. College, J. Harris, D. Leadley, 1998, cond-mat/9805332.

Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas

Maksym Myronov, Christopher Morrison, Stephen Rhead, 2014 .

Polaron Coupling in GaAs-GaAlAs Heterostructures Observed by Cyclotron and Magnetophonon Resonance

D. J. Barnes, J. Harris, C. Foxon, 1989 .

Cyclotron and Magnetophonon Resonance in Semiconductor Heterostructures

D. Leadley, R. Nicholas, Hopkins Ma, 1989 .

Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in p-Si/SiGe/Si structures with an anisotropic g factor

D. Leadley, O. Mironov, I. Drichko, 2010, 1011.5403.

Quantum Hall Ferromagnetic-Paramagnetic Transition in p-Si/SiGe/Si Quantum Wells in a Tilted Magnetic Field

D. Leadley, O. Mironov, I. Drichko, 2012 .

Magnetoresistivity in a tilted magnetic field in p-Si/SiGe/Si heterostructures with an anisotropic g-factor. Part II

D. Leadley, O. Mironov, I. Drichko, 2012, 1204.1144.

Large magnetoresistance of a dilute p-Si/SiGe/Si quantum well in a parallel magnetic field

D. Leadley, O. Mironov, I. Drichko, 2008, 0807.2709.

Measurements of hot electron magnetophonon resonance in GaAs/GaAlAs heterostructures

J. Harris, C. Foxon, D. Leadley, 1988 .

Magnetoresistance in dilute p‐Si/SiGe in parallel and tilted magnetic fields

D. Leadley, O. Mironov, I. Drichko, 2009, 0910.2833.

High-frequency transport in p -type Si/ Si 0.87 Ge 0.13 heterostructures studied with surface acoustic waves in the quantum Hall regime

A. M. Diakonov, M. Myronov, D. Leadley, 2004, cond-mat/0411513.

Pressure dependence study of the effective mass in Ga0.47In0.53As/InP heterojunctions

M. Razeghi, D. Leadley, R. Nicholas, 1988 .

Carrier Concentration Dependent Phonon Frequencies Deduced from Magnetophonon Resonance in GaInAs/InP Quantum Wells

S. J. Bass, D. Leadley, M. Skolnick, 1989 .

Disappearance of magnetophonon resonance at high magnetic fields in GaAs/GaAlAs heterojunctions

J. Harris, C. Foxon, J. Devreese, 1994 .

Magnetophonon Resonance Amplitudes in GaAs-GaAlAs Heterojunctions

J. Harris, C. Foxon, D. Leadley, 1992 .

Electron-phonon interactions in low dimensional structures

D. Leadley, 1989 .

Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

R. Hammond, D. Leadley, E. Parker, 2004 .

Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration

M. Myronov, D. Leadley, V. Shah, 2012 .

High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate

Y. Shiraki, M. Myronov, D. Leadley, 2009 .

Comparison of cross‐sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers

T. Walther, M. Myronov, D. Leadley, 2017, Journal of microscopy.

High-field magneto-resistance in GaAs-GaAlAs heterojunctions

J. Harris, C. Foxon, J. Devreese, 1993 .

A new method of investigating the quantum channel surface

V. Andrievskii, M. Myronov, D. Leadley, 2008 .

Non-linear vibrational response of Ge and SiC membranes

R. Prince, M. Myronov, D. Leadley, 2017 .

Modelling the inhomogeneous SiC Schottky interface

Philip A. Mawby, Evgeniy Donchev, Jing S. Pang, 2013 .

A study of temperature-related non-linearity at the metal-silicon interface

Philip A. Mawby, Evgeniy Donchev, Jing S. Pang, 2012 .

Flexural mode dispersion in ultra-thin Ge membranes

E. Chavez, F. Alzina, C. S. Sotomayor Torres, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD

M. Myronov, D. Leadley, A. Dobbie, 2011 .

Temperature-dependent high-current breakdown of the quantum Hall effect

D. Ritchie, M. Henini, M. Simmons, 2004 .

Ultrasonic Inspection and Self-Healing of Ge and 3C-SiC Semiconductor Membranes

M. Myronov, D. Leadley, V. Shah, 2020, Journal of Microelectromechanical Systems.

Laser ultrasonic characterization of membranes for use as micro-electronic mechanical systems (MEMS)

R. Prince, M. Myronov, D. Leadley, 2017 .

Electrical properties and strain distribution of Ge suspended structures

C. M. Torres, M. Myronov, D. Leadley, 2015 .

High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate

M. Myronov, D. Leadley, V. Shah, 2011 .

High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform

M. Myronov, D. Leadley, V. Shah, 2010 .

Hall field-induced resistance oscillations in a p -type Ge/SiGe quantum well

D. Leadley, O. Mironov, Q. Shi, 2014, 1405.1093.

Evidence of strong spin–orbit interaction in strained epitaxial germanium

M. Myronov, D. Leadley, S. Rhead, 2016 .

Revealing high room and low temperatures mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate

M. Myronov, D. Leadley, S. Rhead, 2015 .

An origin behind Rashba spin splitting within inverted doped sGe heterostructures

D. Leadley, A. Dobbie, O. Mironov, 2017 .

Magnetotransport in p-type Ge quantum well narrow wire arrays

M. Myronov, D. Leadley, R. Mansell, 2015 .

Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0)

C. Fisher, P. Mawby, Y. Sharma, 2015 .

Kirkendall void formation in reverse step graded Si1−xGex/Ge/Si(001) virtual substrates

M. Myronov, D. Leadley, S. Rhead, 2018 .

NANOSIL network of excellence-silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

Denis Flandre, Sorin Cristoloveanu, Jean-Pierre Raskin, 2008 .

Relaxation of strained silicon on Si 0.5 Ge 0.5 virtual substrates

D. Leadley, E. Parker, R. Morris, 2008 .

On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

L. Donetti, D. Esseni, F. Gámiz, 2011 .

Hole effective mass in silicon inversion layers with different substrate orientations and channel directions

L. Donetti, F. Gámiz, M. Östling, 2011 .

Quantum Interference Effects in p-Si1−xGex Quantum Wells

V. Andrievskii, T. Hackbarth, D. Leadley, 2010 .

Weak localization and charge-carrier interaction effects in a two-dimensional hole gas in a germanium quantum well in a SiGe∕Ge∕SiGe heterostructure

V. Andrievskii, M. Myronov, D. Leadley, 2006 .

N-type SiGe/Ge superlattice structures for terahertz emission

M. Myronov, D. Leadley, S. Rhead, 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).

The Cryogenic Testing and Characterisation of SiC Diodes

C. Fisher, P. Mawby, M. Myronov, 2014 .

Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process

M. Myronov, D. Leadley, T. Whall, 2012 .

Developments in germanium-on-silicon epitaxy by reduced pressure chemical vapor deposition

M. Myronov, D. Leadley, P. Allred, 2014, 2014 15th International Conference on Ultimate Integration on Silicon (ULIS).

Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates

James J. Mudd, I. Maskery, S. Wilkins, 2013, Crystal growth & design.

Magnetotransport studies of SiGe-based p-type heterostructures: Problems with the determination of effective mass

V. Andrievskii, D. Leadley, O. Mironov, 2012 .

Cryogenic Characterization of Commercial SiC Power MOSFETs

C. Fisher, P. Mawby, S. Jahdi, 2015 .

The Stranski–Krastanow transition in SiGe epitaxy investigated by scanning transmission electron microscopy

T. Walther, M. Myronov, D. Leadley, 2013 .

Tensile strain mapping in flat germanium membranes

M. Myronov, D. Leadley, V. Shah, 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).

Intersubband resonant scattering in GaAs-Ga1-xAlxAs heterojunctions.

Harris, Nicholas, Fletcher, 1992, Physical review. B, Condensed matter.

Silicon–germanium interdiffusion in strained Ge/SiGe multiple quantum well structures

D. Leadley, Xuefeng Liu, 2010 .

High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates

M. Myronov, D. Leadley, A. Dobbie, 2011 .

Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates

T. Walther, M. Myronov, D. Leadley, 2012 .

Cyclotron Resonance: Semiconductors

D. Leadley, 2005 .

Features of the Shubnikov–de Haas oscillations of the conductivity of a high-mobility two-dimensional hole gas in a SiGe∕Ge∕SiGe quantum well

V. Andrievskii, M. Myronov, D. Leadley, 2006 .