D. Ren

发表

Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al2O3 Passivation.

Alan C. Farrell, D. Huffaker, K. M. Azizur-Rahman, 2019, Nano letters.

InGaAs-GaAs Nanowire Avalanche Photodiodes Toward Single-Photon Detection in Free-Running Mode.

Alan C. Farrell, Hyunseok Kim, P. Senanayake, 2018, Nano letters.

Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium

Hyunseok Kim, Dingkun Ren, Alan C. Farrell, 2018, Nanotechnology.

Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb

A. Chatziioannou, D. Huffaker, D. Ren, 2017 .

Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al2O3 passivation

A. Chatziioannou, D. Huffaker, D. Ren, 2019, Japanese Journal of Applied Physics.

A three-dimensional insight into correlation between carrier lifetime and surface recombination velocity for nanowires.

D. Huffaker, K. M. Azizur-Rahman, D. Ren, 2018, Nanotechnology.

Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model.

Alan C. Farrell, D. Huffaker, D. Ren, 2018, Nanoscale.

Mapping Charge Recombination and the Effect of Point-Defect Insertion in GaAs Nanowire Heterojunctions

Hyunseok Kim, D. Huffaker, D. Ren, 2021, Physical Review Applied.

Mapping Charge Recombination and the Effect of Point Defect Insertion in Gallium Arsenide Nanowire Heterojunctions

Hyunseok Kim, D. Huffaker, D. Ren, 2020, 2010.05140.

Self-assembly of tensile-strained Ge quantum dots on InAlAs(111)A

D. Ren, P. Simmonds, T. Vandervelde, 2020 .

High-Power Terahertz Generation from Telecommunication-Compatible, Bias-Free Photoconductive Nano-Antennas

Hyunseok Kim, D. Huffaker, D. Ren, 2018, 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

Feasibility of achieving high detectivity at short- and mid-wavelength infrared using nanowire-plasmonic photodetectors with p–n heterojunctions

D. Huffaker, K. M. Azizur-Rahman, D. Ren, 2018, Nanotechnology.

Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection

A. Chatziioannou, D. Huffaker, D. Ren, 2019, Advanced Optical Materials.

Inducing Electrically-Active Defects in a Gallium Arsenide Nanowire with an Electron Beam

Hyunseok Kim, D. Huffaker, D. Ren, 2019, Microscopy and Microanalysis.

High-efficiency ultrafast optical-to-electrical converters based on InAs nanowire-plasmonic arrays.

Hyunseok Kim, D. Huffaker, D. Ren, 2019, Optics letters.

Optical spectroscopy of p-GaAs nanopillars on Si for monolithic integrated light sources

Diana L. Huffaker, Tomasz J. Ochalski, J. S. D. Morales, 2017, OPTO.

Lateral carrier transfer for high density InGaAs/GaAs surface quantum dots

D. Ren, G. Salamo, G. Fu, 2020 .

Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates.

Dingkun Ren, Alan C. Farrell, D. Huffaker, 2017, Nanoscale.

Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p- n Heterojunctions.

Dingkun Ren, Zixuan Rong, Alan C. Farrell, 2018, Nano letters.

Feasibility of Tracking Multiple Single-Cell Properties with Impedance Spectroscopy.

C. O. Chui, D. Ren, 2018, ACS sensors.