S. Horii

发表

High deposition rate of epitaxial (1 0 0) Iridium film on (1 0 0)YSZ/(1 0 0)Si substrate by RF sputtering deposition

T. Khoa, S. Horii, S. Horita, 2002 .

Electrical and physical properties of HfO2 films prepared by remote plasma oxidation of Hf metal

Masaaki Niwa, Shigenori Hayashi, Hironobu Miya, 2003 .

Ferroelectric properties of epitaxial Bi4Ti3O12 films deposited on epitaxial (100) Ir and (100) Pt films on Si by sputtering

S. Horii, S. Horita, S. Sasaki, 2002 .

Crystalline and ferroelectrical properties of heteroepitaxial (100) and (111) Pb(ZrxTi1−x)O3 films on Ir/(100)(ZrO2)1−x(Y2O3)x/(100)Si structures

S. Horii, S. Horita, H. Nakajima, 2001 .

Suppression of Oxidation of an Epitaxial (100)ZrN Film on Si During the Deposition of Ir Film

S. Horii, S. Horita, 2000 .

Heteroepitaxial Growth of Ir/ZrN Layered Electrode on (100)Si Substrate for Ferroelectric Capacitor

S. Horii, S. Horita, S. Yokoyama, 1999 .

Heteroepitaxial Growth of PZT Film on (100)Ir/(100)YSZ/(100)Si Substrate Structure Prepared by Reactive Sputtering

S. Horii, S. Horita, 1998 .

Effect of nitrogen on electrical and physical properties of polyatomic layer chemical vapor deposition HfSixOy gate dielectrics

T. Fuyuki, Y. Uraoka, T. Okamoto, 2004 .

Electrical and physical characterization of remote plasma oxidized HfO/sub 2/ gate dielectrics

M. Aoulaiche, M. Houssa, S. Hayashi, 2006, IEEE Transactions on Electron Devices.

Enhancing memory efficiency of Si nanocrystal floating gate memories with high-κ gate oxides

T. Fuyuki, Y. Uraoka, S. Horii, 2006 .

Impact of air-induced poly-Si/oxynitride interface layer degradation on gate-edge leakage

T. Chikyow, S. Horii, T. Horikawa, 2011, 2011 International Reliability Physics Symposium.

Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing

T. Fuyuki, Y. Uraoka, S. Horii, 2006 .

Low Voltage Saturation of Pb(ZrxTi1-x)O3 Films on (100)Ir/(100)(ZrO2)1-x(Y2O3)x/(100)Si Substrate Structure Prepared by Reactive Sputtering.

S. Horii, S. Horita, S. Yokoyama, 2000 .

Thickness Dependence of Material Properties of Epitaxial Pb(ZrxTi1-x)O3 Films on Ir/(100) (ZrO2)1-x(Y2O3)x/(100)Si Structures

S. Horii, S. Horita, S. Yokoyama, 1999 .

Material Properties of Heteroepitaxial Ir and Pb(ZrxTi1-x)O3 Films on (100)(ZrO2)1-x(Y2O3)x/(100)Si Structure Prepared by Sputtering

S. Horii, S. Horita, S. Umemoto, 1998 .

Metalorganic Chemical Vapor Deposition of HfO2 Films through the Alternating Supply of Tetrakis(1-methoxy-2-methyl-2-propoxy)-Hafnium and Remote-Plasma Oxygen

S. Horii, H. Miya, M. Niwa, 2003 .

Hafnium Oxide Film Etching Using Hydrogen Chloride Gas

S. Horii, Hitoshi Habuka, Y. Kunii, 2009 .

Metal-Organic Chemical Vapor Deposition of HfO2 by Alternating Supply of Tetrakis-Diethylamino-Hafnium and Remote-Plasma Oxygen

S. Hayashi, S. Horii, H. Miya, 2004 .

Growth and effects of remote-plasma oxidation on thin films of HfO2 prepared by metal-organic chemical-vapor deposition

S. Horii, H. Miya, M. Niwa, 2003 .

Improvement of Surface Crystalline Quality of an Epitaxial (100)ZrN Film as a Bottom Electrode Diffusion Barrier for Ferroelectric Capacitors

S. Horii, S. Horita, Takeo Toda, 2001 .