J. McCallum

Matthew D. H. Lay, C. Jagadish, J. McCallum, 2002, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601).

Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions

David N. Jamieson, A. Morello, B. Johnson, 2021, Advanced materials.

Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor

Gabriele G. de Boo, C. Duan, B. Johnson, 2022, 2201.11472.

Kelvin-Probe Force Microscopy Defect Study of Ion Implanted Thermal Oxide Thin Films on Silicon

Matthew D. H. Lay, J. McCallum, C. Pakes, 2004, Conference on Optoelectronic and Microelectronic Materials and Devices, 2004..

Effect of boron on formation of interstitial‐related luminescence centres in ion implanted silicon

J. McCallum, S. Charnvanichborikarn, J. Wong-Leung, 2011 .

J. McCallum, P. Spizzirri, B. Villis, 2008, 2008 International Conference on Nanoscience and Nanotechnology.

Ion-implantation and analysis for doped silicon slot waveguides

J. McCallum, N. Stavrias, L. Deam, 2012 .

Ion-implantation and analysis for doped silicon slot waveguides

J. McCallum, N. Stavrias, K. K. Lee, 2012, COMMAD 2012.

Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films

B. Johnson, J. McCallum, R. Haglund, 2014 .

Single site optical spectroscopy of coupled Er3+ ion pairs in silicon

B. Johnson, J. McCallum, S. Rogge, 2022 .

The Zeeman and hyperfine interactions of a single $^{167}Er^{3+}$ ion in Si

Gabriele G. de Boo, Yang Zhang, C. Duan, 2022, 2204.11416.

Few-layered graphene growth by carbon implantation into polycrystalline nickel substrate

A. Soncini, J. McCallum, D. Jamieson, 2012, COMMAD 2012.

Nanomechanical Sensing Using Spins in Diamond.

Richard L. Taylor, T. Ohshima, M. Doherty, 2016, Nano letters.

Creation and Functionalization of Defects in SiC by Proton Beam Writing

T. Satoh, T. Kamiya, T. Ohshima, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Synthesis of Ti: Sapphire by Ion Implantation

J. McCallum, L. D. Morpeth, 1999 .

The effect of post-implantation annealing on the microstructure of Al2O3 implanted with iron at − 185°C

J. McCallum, L. Romana, C. McHargue, 1991 .

Microstructural and chemical effects in Al_2O_3 implanted with iron at 77 K and annealed in oxidizing or reducing atmospheres

J. McCallum, A. Perez, C. McHargue, 1991 .

Time resolved reflectivity measurements of the amorphous-to-gamma and gamma-to-alpha phase transitions in ion-implanted Al2O3

I. V. Mitchell, T. W. Simpson, J. McCallum, 1994 .

Conditions for the formation of Ti3+ by ion implantation of a-axis α-Al2O3

J. McCallum, L. D. Morpeth, M. Norman, 2004 .

Fabrication and characterization of PECVD silicon nitride for RF MEMS applications

R. Ramer, J. McCallum, E. Gauja, 2013 .

P-Type Ohmic Contact to Monolayer WSe2 Field-Effect Transistors Using High-Electron Affinity Amorphous MoO3

M. Fuhrer, Kenji Watanabe, T. Taniguchi, 2022, ACS Applied Electronic Materials.

g -factor and well-width fluctuations as a function of carrier density in the two-dimensional hole accumulation layer of transfer-doped diamond

L. Ley, A. Stacey, J. McCallum, 2019, Physical Review B.

Ion channelling and Raman scattering study of self-implanted silicon

J. McCallum, B. Johnson, 2002, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601).

Collapse of nanocavities studied by ion-channeling and Raman spectroscopy

B. Johnson, J. McCallum, 2002 .

Temperature dependence of blistering in hydrogen implanted Si and Ge

R. Elliman, J. McCallum, D. Pyke, 2013 .

Activation energy and blistering rate in hydrogen-implanted semiconductors

J. McCallum, D. Pyke, R. Elliman, 2012 .

High-resolution spectroscopy of individual erbium ions in strong magnetic fields

M. Rancic, B. Johnson, J. McCallum, 2019, 1912.05795.

Micro-concave waveguide antenna for high photon extraction from nitrogen vacancy centers in nanodiamond

A. Roberts, K. Ganesan, S. Prawer, 2015, Scientific Reports.

Engineering chromium-related single photon emitters in single crystal diamonds

S. Prawer, B. Johnson, J. McCallum, 2010, 1009.5844.

Epitaxial growth of SiC on (100) Diamond

L. Hollenberg, A. Stacey, J. McCallum, 2020, 2002.07314.

Chromium single-photon emitters in diamond fabricated by ion implantation

A. Greentree, D. Simpson, S. Prawer, 2010, 1001.4373.

Nanomechanical Sensing Using Spins in Diamond.

Richard L. Taylor, T. Ohshima, M. Doherty, 2016, Nano letters.

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

J. McCallum, L. W. V. Beveren, E. Gauja, 2010, 1002.4934.

Electrically detected magnetic resonance in ion-implanted Si:P nanostructures

M. Brandt, H. Huebl, J. McCallum, 2006, cond-mat/0605516.

Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation

B. Johnson, J. McCallum, K. Prince, 2009 .

Palladium forms Ohmic contact on hydrogen-terminated diamond down to 4 K

J. McCallum, D. Qi, D. Creedon, 2020, Applied Physics Letters.

Negative Capacitance in Hydrogen-Terminated Diamond Devices

J. Tetienne, J. McCallum, N. Dontschuk, 2020 .

Strong spin-orbit interaction induced by transition metal oxides at the surface of hydrogen-terminated diamond

L. Ley, J. McCallum, D. Qi, 2020 .

Engineering the spin–orbit interaction in surface conducting diamond with a solid-state gate dielectric

L. Ley, J. McCallum, D. Qi, 2020, Applied Physics Letters.

The potential for the fabrication of wires embedded in the crystalline silicon substrate using the solid phase segregation of gold in crystallising amorphous volumes

J. McCallum, Amelia C Y Liu, Amelia C. Y. Liu, 2004 .

Spectral Broadening of a Single Er3+ Ion in a Jiangfeng Du, C. Duan, B. Johnson, 2022, Physical Review Applied.

HYDROGEN CATALYZED CRYSTALLIZATION OF STRONTIUM TITANATE

I. V. Mitchell, T. W. Simpson, J. McCallum, 1994 .

Biomolecular modifications in the sacfry of Mogurnda adspersa in response to copper stress.

J. McCallum, Aleicia Holland, G. Rees, 2022, Aquatic toxicology.

Optical spectroscopy of erbium doped monocrystalline vanadium dioxide

B. Johnson, J. McCallum, R. Haglund, 2014, 2014 Conference on Optoelectronic and Microelectronic Materials & Devices.

Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor

Gabriele G. de Boo, C. Duan, B. Johnson, 2022, 2201.11472.

Development Of nanowire devices with quantum functionalities

B. Johnson, J. McCallum, D. Jamieson, 2014, 2014 Conference on Optoelectronic and Microelectronic Materials & Devices.

Lattice location of nickel in diamond by RBS channelling and PIXE

C. Ryan, S. Prawer, J. McCallum, 2011 .

Size dependence of structural stability in nanocrystalline diamond

S. Prawer, J. McCallum, D. Jamieson, 2000 .

Diamond-like carbon nanocrystals formed by implanting fused quartz and sapphire (α-Al2O3) with carbon ions

S. Prawer, J. McCallum, D. Jamieson, 1999 .

Annealing of Pb-Implanted SrTiO 3 in The Presence of Water Vapour: A Study Using D 2 18 O Labelling

I. V. Mitchell, T. W. Simpson, J. McCallum, 1991 .

The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized SrTiO_3

J. McCallum, L. Boatner, J. Rankin, 1992 .

Diamond nanocrystals formed by direct implantation of fused silica with carbon

Y. Li, S. Prawer, J. McCallum, 2001 .

Deterministic Atom Placement by Ion Implantation: Few and Single Atom Devices for Quantum Computer Technology

F. Hudson, A. Morello, A. Dzurak, 2016, 2016 21st International Conference on Ion Implantation Technology (IIT).

Single-atom spin qubits in silicon

J. P. Dehollain, J. Muhonen, A. Laucht, 2013, 2014 Conference on Optoelectronic and Microelectronic Materials & Devices.

Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor

M. Rancic, J. McCallum, S. Rogge, 2012, COMMAD 2012.

Donor-based qubits for quantum computing in silicon

J. McCallum, B. C. Johnson, T. Botzem, 2021, Applied Physics Reviews.

Coherent electrical control of a single high-spin nucleus in silicon

Andrew S. Dzurak, Andrea Morello, Andrew D. Baczewski, 2019, Nature.

The structure of Al2O3 implanted with iron at 77 K

J. McCallum, C. McHargue, C. White, 1990 .

Structure of Amorphous A12O3 Produced by Ion Implantation

J. McCallum, A. Perez, C. McHargue, 1989 .

Structural Analysis of Amorphous Phosphates Using High Performance Liquid Chromatography

J. McCallum, R. Zuhr, B. Sales, 1993 .

Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

C. Jagadish, B. Johnson, J. McCallum, 2012 .

Investigation of charge carrier trapping in H-terminated diamond devices

J. Tetienne, J. McCallum, B. C. Johnson, 2020 .

The residual charge state of tin implanted into sapphire

J. McCallum, A. Perez, C. McHargue, 1990 .

Single atom devices by ion implantation

C. Yang, F. Hudson, A. Morello, 2015, Journal of physics. Condensed matter : an Institute of Physics journal.

Microbeam imaging at micron and submicron resolution

A. Mazzolini, R. Colman, J. McCallum, 1986 .

Solid-Phase Epitaxy

B. Johnson, J. McCallum, M. Aziz, 2015 .

Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si

B. Johnson, J. McCallum, E. Napolitani, 2016 .

Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers

B. Johnson, J. McCallum, D. Pyke, 2010 .

Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium

B. Johnson, J. McCallum, B. Johnson, 2008, 1007.5209.

Modeling the effect of hydrogen infiltration on the asymmetry in arsenic-enhanced solid phase epitaxy in silicon

B. Johnson, J. McCallum, 2004 .

Microstructural characterization of iron ion implantation of silicon carbide

J. McCallum, J. Bentley, L. Romana, 1992 .

Engineering long spin coherence times of spin–orbit qubits in silicon

H. Riemann, P. Becker, H. Pohl, 2018, Nature Materials.

Electrically controlling single-spin qubits in a continuous microwave field

Gerhard Klimeck, Andrew S. Dzurak, David N. Jamieson, 2015, Science Advances.

Phase transformation-induced superconducting aluminium-silicon alloy rings

T. Duty, J. Cole, J. McCallum, 2022, 2207.05343.

Microstructure evolution in carbon-ion implanted sapphire.

S. Prawer, J. McCallum, D. Jamieson, 2010 .

Cathodoluminescence microanalysis of diamond nanocrystals in fused silicon dioxide

S. Prawer, J. McCallum, D. Jamieson, 2008 .

Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium

H. Bracht, B. Johnson, J. McCallum, 2015 .

Single crystalline SiGe layers on Si by solid phase epitaxy

B. Johnson, J. McCallum, R. Lieten, 2015 .

Time resolved reflectivity measurements in Pb-implanted SrTiO3

C. White, J. McCallum, L. Boatner, 1989 .

Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond

L. Ley, J. McCallum, D. Creedon, 2021 .

G-factor and well width variations for the two-dimensional hole gas in surface conducting diamond

L. Ley, A. Stacey, J. McCallum, 2018 .

Strong and Tunable Spin-Orbit Coupling in a Two-Dimensional Hole Gas in Ionic-Liquid Gated Diamond Devices.

L. Ley, J. McCallum, M. Edmonds, 2016, Nano letters.

Controlled deterministic implantation by nanostencil lithography at the limit of ion-aperture straggling

J. McCallum, D. Jamieson, A. Alves, 2013, Nanotechnology.

Ion microbeam applications in semiconductors

J. McCallum, R. Brown, J. Williams, 1988 .

Channeling contrast microscopy: Application to semiconductor structures

K. Short, J. McCallum, C. D. McKenzie, 1983 .

Real-time in situ study of hydrogen diffusion in amorphous Si formed by ion implantation

B. Johnson, J. McCallum, D. Smeets, 2011 .

Hydrogen in amorphous Si and Ge during solid phase epitaxy

B. Johnson, J. McCallum, P. Caradonna, 2010 .

Dopant enhanced H diffusion in amorphous silicon and its effect on the kinetics of solid phase epitaxy

B. Johnson, J. McCallum, P. Caradonna, 2009 .

Boron Enhanced H Diffusion in Amorphous Si Formed by Ion Implantation

B. Johnson, J. McCallum, K. Prince, 2008 .

Kinetics of arsenic-enhanced solid phase epitaxy in silicon

B. Johnson, J. McCallum, 2004 .

Spatial mapping of band bending in semiconductor devices using in situ quantum sensors

M. Doherty, J. Tetienne, A. Stacey, 2018, Nature Electronics.

Spatial mapping of band bending in semiconductor devices using in situ quantum sensors

L. Hollenberg, M. Doherty, J. Tetienne, 2018, Nature Electronics.

Instability of nanocavities in amorphous silicon

J. McCallum, Xiaohua Zhu, D. Llewellyn, 1999 .

Instability of nanocavities in disordered and amorphous silicon under ion irradiation

J. McCallum, Xiaohua Zhu, James S. Williams, 1998 .

Surface morphological structures in ultra-high-dose self-implanted silicon

J. McCallum, Xianfang Zhu, James S. Williams, 1998 .

Microstructure of ultra high dose self implanted silicon

J. McCallum, Xiaohua Zhu, D. Llewellyn, 1997 .

Annealing environment effects in solid-phase epitaxial regrowth of Fe-implanted Al2O3☆

J. McCallum, C. McHargue, C. White, 1990 .

The chemical state of iron ions implanted into silicon carbide

J. McCallum, A. Perez, C. McHargue, 1991 .

Formation of an r8-Dominant Si Material.

J. McCallum, M. Guthrie, B. Haberl, 2019, Physical review letters.

Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon

A. Morello, B. Johnson, J. McCallum, 2020, 2009.02892.

Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking

J. P. Dehollain, S. Simmons, K. Itoh, 2014, Journal of physics. Condensed matter : an Institute of Physics journal.

Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices

Mark A. Johnson, R. Joynt, K. Itoh, 2018, Physical Review B.

Scanned Single-Electron Probe inside a Silicon Electronic Device.

B. Johnson, J. McCallum, J. Salfi, 2020, ACS nano.

Bell's inequality violation with spins in silicon.

Andrea Morello, Stephanie Simmons, J. P. Dehollain, 2015, Nature nanotechnology.

Optical addressing of an individual erbium ion in silicon

Matthew J. Sellars, Jeffrey C. McCallum, Chunming Yin, 2013, Nature.

Epitaxial Formation of SiC on (100) Diamond

L. Hollenberg, A. Stacey, B. Johnson, 2020 .

A dressed spin qubit in silicon.

J. P. Dehollain, S. Simmons, K. Itoh, 2016, Nature nanotechnology.

Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

C. Yang, B. Johnson, J. McCallum, 2012 .

Dopant effects on solid phase epitaxy in silicon and germanium

T. Ohshima, B. Johnson, J. McCallum, 2012 .

Dopant-enhanced solid-phase epitaxy in buried amorphous silicon layers

J. McCallum, B. C. Johnson, 2007, 1007.5372.

The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers

J. McCallum, 1999 .

Microscopic Imaging of the Stress Tensor in Diamond Using in Situ Quantum Sensors.

M. Doherty, J. Tetienne, J. McCallum, 2019, Nano letters.

Hardness and elastic modulus of zircon as a function of heavy-particle irradiation dose:: II. Pb-ion implantation damage

J. McCallum, B. Chakoumakos, L. Boatner, 1994 .

Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond

H. Kawarada, K. Ganesan, S. Prawer, 2018, Physical Review Applied.

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

K. Ganesan, S. Prawer, J. McCallum, 2016, 1602.00171.

Thermal evolution of the indentation-induced phases of silicon

J. McCallum, B. Haberl, J. Bradby, 2019, Journal of Applied Physics.

Progress in silicon-based quantum computing

T. M. Buehler, D J Reilly, G. J. Milburn, 2003, Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences.

MoO3 induces p-type surface conductivity by surface transfer doping in diamond

L. Ley, A. Stacey, J. McCallum, 2020 .

Surface damage on diamond membranes fabricated by ion implantation and lift-off

L. Feldman, K. Ganesan, S. Prawer, 2011 .

Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation

B. Johnson, J. McCallum, B. Haberl, 2011 .

Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars

P. Reineck, J. McCallum, B. Gibson, 2021, Journal of Applied Physics.

Isotopic enrichment of silicon by high fluence 28Si− ion implantation

J. McCallum, B. Voisin, S. Rogge, 2020, 2009.08594.

In situ amplification of spin echoes within a kinetic inductance parametric amplifier

K. Mølmer, A. Morello, B. Johnson, 2022, Science advances.

7 - Solid-Phase Epitaxy

B. Johnson, J. McCallum, M. Aziz, 2014 .

Structural differences between the glass state and ion-beam-amorphized states of lead pyrophosphate

J. McCallum, B. Sales, L. Boatner, 1990 .

Time-Resolved Photoionization Detection of a Single Er3+ Ion in Silicon.

B. Johnson, J. McCallum, S. Rogge, 2022, Nano letters.

Exploring quantum chaos with a single nuclear spin

G. Milburn, A. Morello, J. McCallum, 2017, Physical Review E.

Coherent control via weak measurements in P31 single-atom electron and nuclear spin qubits

J. P. Dehollain, S. Simmons, K. Itoh, 2017, Physical Review B.

Microscopic imaging of elastic deformation in diamond via in-situ stress tensor sensors

L. Hollenberg, M. Doherty, J. Tetienne, 2018, 1812.01152.

Single rare-earth ions as atomic-scale probes in ultra-scaled transistors.

Jiangfeng Du, M. Rancic, Qi Zhang, 2018, Nano letters.

Effect of boron on interstitial-related luminescence centers in silicon

C. Jagadish, B. Johnson, J. McCallum, 2010 .

Channeling Contrast Microscopy: A Powerful Tool for Examining Semiconductor Structures

J. McCallum, R. Brown, G. Olson, 1986 .

CRYSTALLIZATION OF INDIUM IMPLANTED AMORPHOUS SILICON.

R. Elliman, J. McCallum, G. Olson, 1986 .

Breaking the rotating wave approximation for a strongly driven dressed single-electron spin

J. P. Dehollain, S. Simmons, K. Itoh, 2016, 1606.02380.

Erbium-doped slot waveguides containing size-controlled silicon nanocrystals

J. Heitmann, B. Johnson, J. McCallum, 2015 .

Graphene‐Enhanced Single Ion Detectors for Deterministic Near‐Surface Dopant Implantation in Diamond

Yuerui Lu, B. Johnson, J. McCallum, 2023, Advanced Functional Materials.

Two-level ultrabright single photon emission from diamond nanocrystals.

Igor Aharonovich, Stefania Castelletto, Steven Prawer, 2009, Nano letters.

Navigating the 16-dimensional Hilbert space of a high-spin donor qudit with electric and magnetic fields

K. Itoh, F. Hudson, A. Morello, 2023, 2306.07453.

Activation and electron spin resonance of near-surface implanted bismuth donors in silicon

B. Johnson, J. McCallum, D. Jamieson, 2019, Physical Review Materials.

High-fidelity adiabatic inversion of a $^{31}\mathrm{P}$ electron spin qubit in natural silicon

J. P. Dehollain, J. Muhonen, A. Laucht, 2013, 1312.4647.

Surface transfer doping of diamond using solution-processed molybdenum trioxide

Jian Huang, Linjun Wang, J. McCallum, 2021 .

Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si

Jonathan P. Mailoa, T. Buonassisi, D. Macdonald, 2017 .

Colloidal Au and Ag precipitates formed in Al2O3 by ion implantation and annealing

J. McCallum, R. Zuhr, D. Hensley, 1993 .

Modification of The Optical Properties of Al 2 O 3 by Ion Implantation

J. McCallum, R. Zuhr, R. Haglund, 1992 .

Piezoresistance in Defect-Engineered Silicon

M. Filoche, J. McCallum, S. Arscott, 2020 .

A solid-state quantum microscope for wavefunction control of an atom-based quantum dot device in silicon

M. Simmons, J. McCallum, J. Salfi, 2023, Nature Electronics.

Measuring the Charge and Spin States of Electrons on Individual Dopant Atoms in Silicon

T. M. Buehler, M. Brandt, L. Hollenberg, 2009 .

Helium Microprobe Analysis of Semiconductor Materials

J. McCallum, C. D. McKenzie, J. Williams, 1983, IEEE Transactions on Nuclear Science.

Optically Active Defects at the SiC/SiO2 Interface

R. A. Parker, S. Dimitrijev, Á. Gali, 2019, Physical Review Applied.

Characterisation of nickel germanide formed on amorphous and crystalline germanium

B. Johnson, J. McCallum, M. Blackford, 2014, 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014).

Chemically stabilised ion implanted waveguides in sapphire

P. D. Townsend, L. Zhang, P. J. Chandler, 1990 .

Anomalous, space-charge-limited piezoresistance in defect-engineered silicon

M. Filoche, J. McCallum, S. Arscott, 2020, 2008.04788.

Deep level transient spectroscopy study of heavy ion implantation induced defects in silicon

J. McCallum, B. C. Johnson, C. Lew, 2018, Journal of Applied Physics.

Giant, Anomalous Piezoimpedance in Silicon-on-insulator

B. Johnson, J. McCallum, S. Arscott, 2018, Physical Review Applied.

Giant, anomalous piezoimpedance in commercial silicon-on-insulator wafers

B. Johnson, J. McCallum, S. Arscott, 2018 .

Investigation of amorphisation of germanium using modeling and experimental processes

Anthony S. Holland, S. Almalki, Fahid Algahtani, 2013, Smart Materials, Nano-, and Micro- Smart Systems.

Optical switching and photoluminescence in erbium implanted vanadium dioxide thin films

J. McCallum, R. Haglund, R. Marvel, 2012, COMMAD 2012.

Minimisation of spanning dislocations in the crystallisation of deep amorphous silicon wells through the alignment of volume edges with fast growth directions

J. McCallum, Amelia C. Y. Liu, 2003 .

Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation

J. McCallum, J. Wong-Leung, A. Liu, 2001 .

The crystallisation of deep amorphous wells in silicon produced by ion implantation

J. McCallum, J. Wong-Leung, Amelia C. Y. Liu, 2001 .

Controllable freezing of the nuclear spin bath in a single-atom spin qubit

K. Itoh, A. Laucht, F. Hudson, 2019, Science Advances.

Scalable quantum computing with ion-implanted dopant atoms in silicon

K. Itoh, A. Laucht, F. Hudson, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Structural characterisation of Ti:sapphire regions formed by localised high-energy implantation of Ti and O ions

David N. Jamieson, Jeffrey C. McCallum, J. McCallum, 2001 .

The amorphous-to-gamma transformation in ion implanted Al2O3☆

J. McCallum, C. McHargue, C. White, 1990 .

Annealing‐environment effects in the epitaxial regrowth of ion‐beam‐amorphized layers on CaTiO3

J. McCallum, L. Boatner, J. Rankin, 1995 .

Stimulated emission from nitrogen-vacancy centres in diamond

T. Ohshima, A. Greentree, M. Doherty, 2017, Nature Communications.

Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide

J. McCallum, V. K. Sewani, T. Ohshima, 2023, Applied Physics Letters.

Observing Er3+ Sites in Si With an In Situ Single-Photon Detector

Ian R. Berkman, B. Johnson, J. McCallum, 2021, Physical Review Applied.

Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators

B. Eggleton, B. Morrison, M. Rancic, 2020, Physical Review Applied.

Indium tin oxide film characterization using the classical Hall Effect

A. Roberts, J. McCallum, T. James, 2015, 2014 Conference on Optoelectronic and Microelectronic Materials & Devices.

Amorphous to Polycrystalline Transformation in High Dose Ion Implanted Silicon

J. McCallum, G. Olson, E. Nygren, 1988 .

The Zeeman and hyperfine interactions of a single $^{167}Er^{3+}$ ion in Si

Yang Zhang, C. Duan, J. Longdell, 2022, 2204.11416.

Direct detection of spin resonance with a microwave parametric ampliﬁer

A. Morello, B. Johnson, J. McCallum, 2022 .

Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices

T. Ohshima, Á. Gali, D. Lau, 2016 .