Junfeng Li

发表

Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors

Tianchun Ye, Jun Xu, Chao Zhao, 2017, Nanoscale Research Letters.

Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14nm nodes FinFET technology

Tianchun Ye, Ping Yang, Jun Luo, 2016 .

Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology

Chao Zhao, Huilong Zhu, Jun Luo, 2015 .

Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess

Hui Yang, Bo Zhang, Chao Zhao, 2016, IEEE Transactions on Electron Devices.

8-Layers 3D vertical RRAM with excellent scalability towards storage class memory applications

Qi Liu, S. Long, Ming Liu, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Investigation of Barrier Property of Amorphous Co–Ti Layer as Single Barrier/Liner in Local Co Interconnects

Tianchun Ye, Yaodong Liu, Jianfeng Gao, 2020, IEEE Transactions on Electron Devices.

Experimental investigation of fundamental film properties for Co1−xTix alloying films with different compositions (0 ≤ x≤1)

Tianchun Ye, Jun Luo, Jing Xu, 2019, Journal of Materials Science: Materials in Electronics.

Co-sputtering Co–Ti alloy as a single barrier/liner for Co interconnects and thermal stability enhancement using TiN metal capping

Tianchun Ye, Jun Luo, Guilei Wang, 2019, Journal of Materials Science: Materials in Electronics.

Self-assembling morphologies of symmetrical PS-b-PMMA in different sized confining grooves

Jun Luo, P. Shi, Xiaobin He, 2014 .

Quantum Dot With a Diamond-Shaped Channel MOSFET on a Bulk Si Substrate

Tianchun Ye, Junfeng Li, H. Yin, 2021, IEEE Transactions on Electron Devices.

A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grown

A. Du, Guilei Wang, Jun Luo, 2019, Journal of Materials Science: Materials in Electronics.

First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.

Guilei Wang, Junfeng Li, Huilong Zhu, 2021, Nano letters.

Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process

Tianchun Ye, Junjie Li, Chao Zhao, 2018, IEEE Electron Device Letters.

Study of selective isotropic etching Si1−xGex in process of nanowire transistors

Guilei Wang, Junfeng Li, H. Yin, 2019, Journal of Materials Science: Materials in Electronics.

Improving sidewall roughness by combined RIE-Bosch process

Junfeng Li, Wenwu Wang, Dapeng Chen, 2018, Materials Science in Semiconductor Processing.

Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate

Chao Zhao, Huaxiang Yin, Jinjuan Xiang, 2016 .

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Jianfeng Gao, A. Du, Guilei Wang, 2020, Nanomaterials.

Hot Implantations of P into Ge: Impact on the Diffusion Profile

Tianchun Ye, Jun Luo, E. Simoen, 2017 .

Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess

Xinyu Liu, Sen Huang, Q. Jiang, 2021, Journal of Semiconductors.

Role of Carbon Pre-Germanidation Implantation on Enhancing the Thermal Stability of NiGe Films Below 10 nm Thickness

Tianchun Ye, Yaodong Liu, Guilei Wang, 2020 .

Enhancing the thermal stability of NiGe by prior-germanidation fluorine implantation into Ge substrate

Tianchun Ye, Guilei Wang, Junfeng Li, 2018, Japanese Journal of Applied Physics.

Exploration of the impact of interface states density on the specific contact resistivity in TiSix/n+-Si Ohmic contacts through high-low frequency method

Tianchun Ye, Jing Xu, Guilei Wang, 2019, Japanese Journal of Applied Physics.

Investigation of Key Technologies for Poly-Si/TaN/HfLaON/IL ${\rm SiO}_{2}$ Gate-Stacks in Advanced Device Applications

Tianchun Ye, Junfeng Li, Dapeng Chen, 2014, IEEE Transactions on Electron Devices.

Transistor gate line roughness formation and reduction in sub-30-nm gate patterning using multilayer hard mask structure

Xiaobin He, Junfeng Li, Jiang Yan, 2014 .

Investigation of Ultrathin Ni Germanosilicide for Advanced pMOS Contact Metallization

Tianchun Ye, Yaodong Liu, Jianfeng Gao, 2020, IEEE Transactions on Electron Devices.

Effects of Ni Film Thickness on the Properties of Ni-Based Silicides Formed on Both Highly Doped n- and p-Si Substrate

Tianchun Ye, Jun Luo, Jianfeng Gao, 2020 .

Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure

Sen Huang, Junfeng Li, Chao Zhao, 2016 .

Comparative Study of AlGaN / GaN HEMTs with LPCVD-and PECVD-SiN x Passivation

Weijun, Sen Huang, Junfeng Li, 2014 .

Design and testing of LGAD sensor with shallow carbon implantation

G. Kramberger, Zhijun Liang, Junfeng Li, 2022, 2205.05025.

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

Jianfeng Gao, A. Du, Guilei Wang, 2020, Materials.

Si Nanowire Biosensors Using a FinFET Fabrication Process for Real Time Monitoring Cellular Ion Actitivies

Q. Han, R. Zhao, Junfeng Li, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Understanding the Role of TiN Barrier Layer on Electrical Performance of MOS Device with ALD-TiN/ALD-TiAlC Metal Gate Stacks

Junfeng Li, Chao Zhao, Xiaolei Wang, 2016 .

Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl 4 and TMA precursors

Junfeng Li, Chao Zhao, Wenwu Wang, 2016 .

The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O2/He Plasmas for Thermopile Devices

Jianfeng Gao, Jinbiao Liu, Junfeng Li, 2020, Materials.

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Xinyu Liu, Sen Huang, Q. Jiang, 2021, Applied Physics Letters.

Investigation of Dynamic-QGD on Enhancement-Mode AlGaN/GaN MIS-HEMTs with SiNx Passivation Dielectric

Xinyu Liu, Sen Huang, Q. Jiang, 2022, International Symposium on Power Semiconductor Devices and IC's.

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Jun Yu Li, R. Liang, Jun Xu, 2022, Nanomaterials.

Impact of Ge pre-amorphization implantation on Co/Co-Ti/n+-Si contacts in advanced Co interconnects

Tianchun Ye, Jun Luo, Yaodong Liu, 2020, Japanese Journal of Applied Physics.

Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation

Tianchun Ye, E. Simoen, Guilei Wang, 2016, IEEE Transactions on Electron Devices.

Impact of Ge pre-amorphization implantation on forming ultrathin TiGex on both n- and p-Ge substrate

Tianchun Ye, Jing Xu, Guilei Wang, 2018, Japanese Journal of Applied Physics.

Band alignment of high-k dielectric on SiO2/Si stack

Tianchun Ye, Junfeng Li, Chao Zhao, 2012, 2012 12th International Workshop on Junction Technology.

Study of n-type doping in germanium by temperature based PF+ implantation

Guilei Wang, Jinbiao Liu, Junfeng Li, 2019, Journal of Materials Science: Materials in Electronics.

A high performance HfSiON/TaN NMOSFET fabricated using a gate-last process

Junfeng Li, H. Yin, Chao Zhao, 2013 .

Investigation of NiGe Films Formed on Both n+- and p+-Ge with P and B Ion Implantation before Germanidation

Tianchun Ye, Guilei Wang, Jun Luo, 2019, ECS Journal of Solid State Science and Technology.

Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application

Tianchun Ye, Q. Liang, H. Maynard, 2018, IEEE Transactions on Electron Devices.

Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiN x Grown by Low-Pressure Chemical Vapor Deposition.

Xinyu Liu, Sen Huang, Junfeng Li, 2018, ACS applied materials & interfaces.

Experimental Investigation of As Preamorphization Implant on Electrical Property of Ti-Based Silicide Contacts

Tianchun Ye, Yaodong Liu, Jianfeng Gao, 2021, IEEE Transactions on Electron Devices.

Specific Contact Resistivity Improvement by As Preamorphization Implantation for Ti-Based Ohmic Contacts on n+-Si

Tianchun Ye, Yaodong Liu, Guilei Wang, 2020, IEEE Transactions on Electron Devices.

Improved Ti germanosilicidation by Ge pre-amorphization implantation (PAI) for advanced contact technologies

Tianchun Ye, Jun Luo, Jing Xu, 2018, Microelectronic Engineering.

Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts

Tianchun Ye, Guilei Wang, Jun Luo, 2018, IEEE Transactions on Electron Devices.

On the Manifestation of Ge Pre-Amorphization Implantation (PAI) in Forming Ultrathin TiSix for Ti Direct Contact on Si in Sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) Technology Nodes

Tianchun Ye, Jun Luo, E. Simoen, 2017 .

Effects of carbon pre-silicidation implant into Si substrate on NiSi

Tianchun Ye, Shi-Li Zhang, Dongping Wu, 2014 .

Investigation of TiAlC by Atomic Layer Deposition as N Type Work Function Metal for FinFET

Chao Zhao, Hushan Cui, Huaxiang Yin, 2015 .

NiSi/p⁺-Si(n⁺-Si)/n-Si(p-Si) Diodes With Dopant Segregation (DS): p-n or Schottky Junctions?

Tianchun Ye, Dongping Wu, Yaodong Liu, 2021, IEEE Transactions on Electron Devices.

Design and testing of LGAD sensor with shallow carbon implantation

G. Kramberger, Zhijun Liang, J. G. D. da Costa, 2022, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.

Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits

Qiang Huo, Huilong Zhu, Zhenhua Wu, 2021, Microelectron. J..

Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

Guilei Wang, Jinbiao Liu, Junfeng Li, 2022, 2204.11470.

Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO2 Dielectric Using TaCl5 and TEA as Precursors

Chao Zhao, Jinjuan Xiang, Jiahan Yu, 2017 .

Investigation of N Type Metal TiAlC by Thermal Atomic Layer Deposition Using TiCl4 and TEA as Precursors

Chao Zhao, Jinjuan Xiang, Junfeng Li, 2016 .

Gate patterning in 14 nm and beyond nodes: from planar devices to three dimensional Finfet devices

Yayi Wei, Xiaobin He, Junfeng Li, 2016 .

Innovatively composite hard mask to feature sub-30 nm gate patterning

Jun Luo, Xiaobin He, Junfeng Li, 2014 .

Fabricating metal structures with taper angles and smooth sidewalls

Xiaobin He, Junfeng Li, Chao Zhao, 2017 .

A Novel 3D NOR Flash With Single-Crystal Silicon Channel: Devices, Integration, and Architecture

Junfeng Li, Huilong Zhu, Wenwu Wang, 2022, IEEE Electron Device Letters.

Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects

Qi Liu, S. Long, Ming Liu, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs Using Gate Induced Drain Leakage

A. Du, Junfeng Li, H. Yin, 2023, IEEE Electron Device Letters.

Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer

W. Luo, Sen Huang, Junfeng Li, 2015, IEEE Electron Device Letters.

Investigation of ultrathin yttrium silicide for NMOS source/drain contacts

Tianchun Ye, Jianfeng Gao, Jinbiao Liu, 2023, Journal of Materials Science: Materials in Electronics.

A Refined Ladder Transmission Line Model for the Extraction of Significantly Low Specific Contact Resistivity

Tianchun Ye, Jianfeng Gao, Jinbiao Liu, 2023, IEEE Transactions on Electron Devices.

A Modified Scheme to Reduce the Specific Contact Resistivity of NiSi/Si Contacts by Means of Dopant Segregation Technique

Tianchun Ye, Jun Luo, Guilei Wang, 2017 .

Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial $\hbox{NiSi}_{2 - y}$

Shi-Li Zhang, Dongping Wu, Z. Qiu, 2011, IEEE Electron Device Letters.

Impacts of Ge Preamorphization Implantation and Si Capping on the Specific Contact Resistivity of Ni(Pt)SiGe/p+-SiGe Contacts

Tianchun Ye, Guilei Wang, Jun Luo, 2019, IEEE Transactions on Electron Devices.

Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors

Tianchun Ye, Yaodong Liu, Jianfeng Gao, 2021, Journal of Materials Science: Materials in Electronics.

Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device

A. Du, Guilei Wang, Jun Luo, 2019, Journal of Materials Science: Materials in Electronics.

SiNx films and membranes for photonic and MEMS applications

Yaodong Liu, Guilei Wang, Junfeng Li, 2019, Journal of Materials Science: Materials in Electronics.

Low atomic number silicon nitride films for transmission electron microscopy

Junfeng Li, Wenwu Wang, Dapeng Chen, 2019, Materials Science in Semiconductor Processing.

A Novel Method to Reduce Specific Contact Resistivity of TiSix/n+-Si Contacts by Employing an In-Situ Steam Generation Oxidation Prior to Ti Silicidation

Tianchun Ye, Yaodong Liu, Jianfeng Gao, 2021, IEEE Electron Device Letters.

Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)

Chao Zhao, Jiang Yan, Changliang Qin, 2013 .

Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million.

Jie Yang, Tianchun Ye, Guilei Wang, 2023, ACS applied materials & interfaces.

Novel 10-nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

Tianchun Ye, Junfeng Li, H. Yin, 2019, IEEE Journal of the Electron Devices Society.

Low Gain Avalanche Detectors with good time resolution developed by IHEP and IME for ATLAS HGTD project

Zhijun Liang, J. G. D. da Costa, Junfeng Li, 2021, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.

Design of LGAD Sensor with Low Energy Carbon Implantation and Irradiation Test

Luo, Li, G. Kramberger, 2022 .

Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs

Bo Zhang, Sen Huang, Junfeng Li, 2016 .

pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology

Tianchun Ye, Chao Zhao, Huilong Zhu, 2017, Nanoscale Research Letters.

Study of HKMG Stack Interface Engineer Applicable to 22nm/16nm Finfet Mosfet

Ying Luo, Chao Zhao, Junfeng Li, 2014 .

Thermal Atomic Layer Deposition of TaAlC with TaCl5 and TMA as Precursors

Chao Zhao, Jinjuan Xiang, Wenwu Wang, 2016 .

Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration

Jianfeng Gao, Guilei Wang, Xiaobin He, 2022, Nanomaterials.