Huilong Zhu

发表

Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors

Tianchun Ye, Jun Xu, Chao Zhao, 2017, Nanoscale Research Letters.

Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14nm nodes FinFET technology

Tianchun Ye, Ping Yang, Jun Luo, 2016 .

Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology

Chao Zhao, Huilong Zhu, Jun Luo, 2015 .

FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2

Tianchun Ye, H. Yin, Huilong Zhu, 2019, IEEE Electron Device Letters.

Doping profile optimisation in bulk FinFET channel and source/drain extension regions for low off–state leakage

Tianchun Ye, H. Yin, Huilong Zhu, 2015 .

HfO2-based Ferroelectric Field-Effect-Transistor with Large Memory Window and Good Synaptic Behavior

Huilong Zhu, Junjie Li, J. Xiang, 2021 .

On the design of 2-port SRAM memory cells using PNPN diodes for VLSI application

Tianchun Ye, Q. Liang, Huilong Zhu, 2013 .

Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation

Huilong Zhu, Yongkui Zhang, Xiaogen Yin, 2020, IEEE Electron Device Letters.

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-nm PDSOI I/O nMOSFETs

S. Zou, Huilong Zhu, Zhengxuan Zhang, 2019, IEEE Transactions on Nuclear Science.

First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.

Guilei Wang, Junfeng Li, Huilong Zhu, 2021, Nano letters.

Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si1−xGex

Guilei Wang, Huilong Zhu, H. Radamson, 2020 .

Strained Si CMOS (SS CMOS) technology: Opportunities and challenges

Keith A. Jenkins, Byoung Hun Lee, P. Oldiges, 2003 .

Study of selective isotropic etching Si1−xGex in process of nanowire transistors

Guilei Wang, Junfeng Li, H. Yin, 2019, Journal of Materials Science: Materials in Electronics.

A new method to repair ion implantation-induced damage in the gate dielectric layer of MOSFETs

Huilong Zhu, Yunfei Liu, H. Yin, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Jianfeng Gao, A. Du, Guilei Wang, 2020, Nanomaterials.

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

S. Zou, Huilong Zhu, Zhengxuan Zhang, 2018, Chinese Physics B.

Physical Mechanism Underlying the Time Exponent Shift in the Ultra-fast NBTI of High-k/Metal gated p-CMOSFETs

Tianchun Ye, E. Simoen, H. Yin, 2018, 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

A comprehensive evaluation of radiation hardening by applying negative body bias and back-gate bias in 130 nm PDSOI technology

S. Zou, Huilong Zhu, Zhengxuan Zhang, 2020 .

Design and Simulation of Steep-Slope Silicon Cold Source FETs With Effective Carrier Distribution Model

Tianchun Ye, H. Yin, Huilong Zhu, 2020, IEEE Transactions on Electron Devices.

A Special Total-Ionizing-Dose-Induced Short Channel Effect in Thin-Film PDSOI Technology: Phenomena, Analyses, and Models

S. Zou, Huilong Zhu, Zhengxuan Zhang, 2020, IEEE Transactions on Nuclear Science.

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

Jianfeng Gao, A. Du, Guilei Wang, 2020, Materials.

Sintering of Nano-Particle Powders: Simulations and Experiments

R. Averback, Huilong Zhu, 1996 .

Quantitative Demonstration of Wear Rate and Dissipation Energy during Tension–Torsion Cyclic Loading of Steel Wires with Fretting Contact in Different Environmental Media

Huilong Zhu, Dagang Wang, Xiangru Wang, 2020, Applied Sciences.

Selective Digital Etching of Silicon-Germanium using Nitric and Hydrofluoric Acids.

A. Du, Guilei Wang, Huilong Zhu, 2020, ACS applied materials & interfaces.

Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET

Shichang Zou, Xin Xie, Zhiyuan Hu, 2020, IEICE Electron. Express.

Overshoot Stress on Ultra-Thin HfO2 High- $\kappa $ Layer and Its Impact on Lifetime Extraction

Hongyu Yu, Huilong Zhu, Chao Zhao, 2015, IEEE Electron Device Letters.

THE DEGRADATION INDUCED BY HOT-CARRIER INJECTION IN 130-NM PARTIALLY DEPLETED SOI PMOSFETS FABRICATED ON MODIFIED WAFER

S. Zou, Huilong Zhu, Zhengxuan Zhang, 2019, Recent Developments on Information and Communication Technology (ICT) Engineering.

Molecular dynamics simulations of densification processes in nanocrystalline materials

R. Averback, Huilong Zhu, 1995 .

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

Luyue Xie, A. Du, Guilei Wang, 2020, Nanomaterials.

A Study of Selectively Digital Etching Silicon-Germanium with Nitric and Hydrofluoric Acids

Technology of China, A. Du, Guilei Wang, 2020, 2003.03529.

Defect production mechanisms during keV ion irradiation: results of computer simulations

R. Averback, Huilong Zhu, M. Ghaly, 1994 .

Bulk FinFETs with body spacers for improving fin height variation

Xing Wei, Huilong Zhu, Chao Zhao, 2016 .

Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process*

Tianchun Ye, Jiang Yan, Huilong Zhu, 2017 .

Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application

Tianchun Ye, Q. Liang, H. Maynard, 2018, IEEE Transactions on Electron Devices.

Ternary Logic Circuit Based on Negative Capacitance Field-Effect Transistors and Its Variation Immunity

Huilong Zhu, Zhenhua Wu, Yongkui Zhang, 2021, IEEE Transactions on Electron Devices.

Cluster-solid interactions: A molecular dynamics investigation

R. Averback, Huilong Zhu, M. Ghaly, 1994 .

Molecular dynamics simulations of a 10keV cascade in β-NiAl

M. Nastasi, R. Averback, Huilong Zhu, 1995 .

Atomic transport in irradiated solids

R. Averback, Huilong Zhu, M. Ghaly, 1993 .

Atom Probe Tomography Characterization of Dopant Distributions in Si FinFET: Challenges and Solutions

G. Sha, Huilong Zhu, Yanbo Zhang, 2019, Microscopy and Microanalysis.

Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits

Qiang Huo, Huilong Zhu, Zhenhua Wu, 2021, Microelectron. J..

Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application

Guilei Wang, Huilong Zhu, H. Radamson, 2020, Nanoscale Research Letters.

A Novel 3D NOR Flash With Single-Crystal Silicon Channel: Devices, Integration, and Architecture

Junfeng Li, Huilong Zhu, Wenwu Wang, 2022, IEEE Electron Device Letters.

Investigation of ferroelectric field-effect transistors using a replacement metal gate process

Huilong Zhu, Junjie Li, Gaobo Xu, 2020 .

Surface Modification of Monolayer MoS2 by Baking for Biomedical Applications

Huilong Zhu, Jun Luo, C. Zhang, 2020, Frontiers in Chemistry.

State of the Art and Future Perspectives in Advanced CMOS Technology

Xiaobin He, Huilong Zhu, Yong Du, 2020, Nanomaterials.

Surface Damage During Kev Ion Irradiation: Results of Computer Simulations

R. Averback, Huilong Zhu, M. Ghaly, 1995 .

Surface effects during ion beam processing of materials

R. Averback, Huilong Zhu, M. Ghaly, 1995 .

Crystallization behaviors of ultrathin Al-doped HfO 2 amorphous films grown by atomic layer deposition

H. Yin, Huilong Zhu, Chao Zhao, 2017 .

Investigation of device-circuit for negative capacitance vertical nanowire FETs based on SPICE model

Huilong Zhu, Zhenhua Wu, Yongkui Zhang, 2020, Semiconductor Science and Technology.

The Investigation of Negative Capacitance Vertical Nanowire FETs Based on SPICE Model at Device-Circuit Level pdf

Qiang Huo, Huilong Zhu, Weixing Huang, 2020, ArXiv.

Negative-Capacitance Characteristics in a Steady-State Ferroelectric Capacitor Made of Parallel Domains

Chao Zhao, Huilong Zhu, Xiaogen Yin, 2017, IEEE Electron Device Letters.

Simulations of VNW-FETs with Adjustable Spacer-Like Negative Capacitors Based on Experimental Data

Huilong Zhu, Zhenhua Wu, Jinjuan Xiang, 2019, ECS Journal of Solid State Science and Technology.

The evolution of MoS2 properties under oxygen plasma treatment and its application in MoS2 based devices

H. Yin, Huilong Zhu, Jiahan Yu, 2019, Journal of Materials Science: Materials in Electronics.

Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks

Tianchun Ye, Jun Luo, Changliang Qin, 2017 .

Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation

Huilong Zhu, Xiaolei Wang, Yongkui Zhang, 2022, Journal of Semiconductors.

Investigation of Negative DIBL Effect and Miller Effect for Negative Capacitance Nanowire Field-Effect-Transistors

Huilong Zhu, Zhenhua Wu, Yongkui Zhang, 2020, IEEE Journal of the Electron Devices Society.

Sintering processes of two nanoparticles: A study by molecular dynamics simulations

Huilong Zhu, Huilong Zhu, 1996 .

A Quasi-2d Model for Reverse Short Channel Effect

Huilong Zhu, 1998 .

pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology

Tianchun Ye, Chao Zhao, Huilong Zhu, 2017, Nanoscale Research Letters.

Enhanced End-Contacts by Helium Ion Bombardment to Improve Graphene-Metal Contacts

Chao Zhao, Huilong Zhu, Jun Luo, 2016, Nanomaterials.

Study of HKMG Stack Interface Engineer Applicable to 22nm/16nm Finfet Mosfet

Ying Luo, Chao Zhao, Junfeng Li, 2014 .

Effects of defects and thermal treatment on the properties of graphene

Yajuan Su, Tianchun Ye, Jun Luo, 2015 .

Edge-Contact Formed by Oxygen Plasma and Rapid Thermal Annealing to Improve Metal-Graphene Contact Resistance

Yajuan Su, Yayi Wei, Jun Luo, 2018 .

Impact of ALD TiN Capping Layer on Interface Trap and Channel Hot Carrier Reliability of HKMG nMOSFETs

Tianchun Ye, Bo Tang, Eddy Simoen, 2018, IEEE Electron Device Letters.

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations*

Tianchun Ye, Yefeng Xu, Junfeng Li, 2016 .

The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids

Guilei Wang, Huilong Zhu, H. Radamson, 2021, Nanomaterials.

FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin

Tianchun Ye, Junjie Li, Chao Zhao, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing

A. Du, Guilei Wang, Jinbiao Liu, 2023, Nanomaterials.

Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process

A. Du, H. Yin, Huilong Zhu, 2021, IEEE Transactions on Electron Devices.

A Three-Dimensional Simulation Study of the Novel Comb-Like-Channel Field-Effect Transistors for the 5-nm Technology Node and Beyond

Huilong Zhu, Zhenhua Wu, Weixing Huang, 2022, IEEE Transactions on Electron Devices.

Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit

Qiang Huo, Huilong Zhu, Huaxiang Yin, 2021, Microelectron. J..

Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance

Tianchun Ye, Q. Liang, Hongyu Yu, 2015, IEEE Transactions on Electron Devices.

High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

A. Du, Guilei Wang, Jinbiao Liu, 2023, Nanomaterials.

On the SRAM with comb-shaped nano FETs advancing to 3 nm node and beyond

Huilong Zhu, Z. Kong, Zhenhua Wu, 2023, Microelectron. J..

Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

A. Du, Guilei Wang, Huilong Zhu, 2021, Nanomaterials.

Observation of the Ambient Effect in BTI Characteristics of Back-Gated Single Layer Graphene Field Effect Transistors

Fei Wang, Xiao Wei Sun, Zheng Fang, 2013, IEEE Transactions on Electron Devices.

Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer

Shichang Zou, Zhiyuan Hu, Huilong Zhu, 2019, IEICE Electron. Express.

The characterization of the built-in bipolar junction transistor in H-gate PD-SOI NMOS

S. Zou, Huilong Zhu, Zhengxuan Zhang, 2020 .

Ferroelectric Vertical Gate-All-Around Field-Effect-Transistors With High Speed, High Density, and Large Memory Window

Junfeng Li, Huilong Zhu, J. Xiang, 2022, IEEE Electron Device Letters.