H. Radamson

发表

Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors

Tianchun Ye, Jun Xu, Chao Zhao, 2017, Nanoscale Research Letters.

Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14nm nodes FinFET technology

Tianchun Ye, Ping Yang, Jun Luo, 2016 .

Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology

Chao Zhao, Huilong Zhu, Jun Luo, 2015 .

Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs

Henry H. Radamson, Mohammadreza Kolahdouz, M. Kolahdouz, 2015, Journal of Materials Science: Materials in Electronics.

Strain Modulation of Selectively and/or Globally Grown Ge Layers

Guilei Wang, Jinbiao Liu, H. Radamson, 2021, Nanomaterials.

Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

M. Toprak, Guilei Wang, H. Radamson, 2021, Nanomaterials.

Graphene synthesis, characterization and its applications in nanophotonics, nanoelectronics, and nanosensing

M. Kolahdouz, H. Radamson, F. Akbar, 2015, Journal of Materials Science: Materials in Electronics.

Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs

Tianchun Ye, E. Simoen, Jun Luo, 2017, IEEE Transactions on Electron Devices.

3D Free‐Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching

A. Fischer, G. Stemme, F. Niklaus, 2012 .

Diffusion of phosphorus in relaxed Si1−xGex films and strained Si/Si1−xGex heterostructures

H. Radamson, B. Svensson, J. S. Christensen, 2003 .

Characterization of Ni(Si,Ge) films on epitaxial SiGe(100) formed by microwave annealing

Shi-Li Zhang, Dongping Wu, H. Radamson, 2012 .

Single crystal diamond for infrared sensing applications

M. Kolahdouz, H. Radamson, M. Moeen, 2014 .

Group IV Materials for Low Cost and High Performance Bolometers

M. Kolahdouz, H. Radamson, 2012 .

Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation

Huilong Zhu, Yongkui Zhang, Xiaogen Yin, 2020, IEEE Electron Device Letters.

Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs

Yuanyuan Wu, Guilei Wang, H. Radamson, 2022, Nanomaterials.

First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.

Guilei Wang, Junfeng Li, Huilong Zhu, 2021, Nano letters.

Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si1−xGex

Guilei Wang, Huilong Zhu, H. Radamson, 2020 .

Kinetic Model of SiGe Selective Epitaxial Growth Using RPCVD Technique

A. Khatibi, M. Kolahdouz, H. Radamson, 2010, ECS Transactions.

Fabrication of strained Ge on insulator via room temperature wafer bonding

M. Ostling, M. Ostling, A. Asadollahi, 2014, 2014 15th International Conference on Ultimate Integration on Silicon (ULIS).

Study of selective isotropic etching Si1−xGex in process of nanowire transistors

Guilei Wang, Junfeng Li, H. Yin, 2019, Journal of Materials Science: Materials in Electronics.

Electrical characterization and the strain compensation effect and thermal stability of B-doped heterostructures

O. Nur, M. Willander, H. Radamson, 1996 .

Strain relaxation in epitaxial Si1-xGex layers during some silicidation processes

O. Nur, M. Willander, H. Radamson, 1994 .

Formation of Ni mono-germanosilicide on heavily B-doped epitaxial SiGe for ultra-shallow source/drain contacts

Shi-Li Zhang, M. Östling, H. Radamson, 2002 .

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

Guilei Wang, H. Radamson, Yong Du, 2021, Nanomaterials.

Ultra-high efficiency piezotronic sensing using piezo-engineered FETs

M. Kolahdouz, H. Aghababa, H. Radamson, 2018 .

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Jianfeng Gao, A. Du, Guilei Wang, 2020, Nanomaterials.

Silicon Nanowires for Gas Sensing: A Review

H. Nilsson, H. Radamson, Buqing Xu, 2020, Nanomaterials.

Stabilization of Ge-rich defect complexes originating from E centers in SiGe:P

H. Radamson, F. Tuomisto, J. Slotte, 2010 .

Low-temperature growth and critical epitaxial thicknesses of fully strained metastable Ge1−xSnx (x≲0.26) alloys on Ge(001)2×1

H. Radamson, P. Desjardins, J. Greene, 1998 .

Scaling and evolution of device architecture

H. Radamson, J. Luo, E. Simeon, 2018 .

Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate

Guilei Wang, H. Radamson, Yong Du, 2022, Materials.

Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire

D. Look, H. Radamson, S. Lourdudoss, 2006 .

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

Jianfeng Gao, A. Du, Guilei Wang, 2020, Materials.

ISFET immunosensor improvement using amine-modified polystyrene nanobeads

M. Kolahdouz, M. Fathollahzadeh, H. Radamson, 2018, Journal of Solid State Electrochemistry.

Thermoelectric energy harvesting using array of vertically aligned Al-doped ZnO nanorods

M. Kolahdouz, H. Radamson, K. Narimani, 2016 .

Growth of metastable Ge1−xSnx/Ge strained layer superlattices on Ge(001)2×1 by temperature‐modulated molecular beam epitaxy

H. Radamson, M. Hasan, J. Greene, 1995 .

Silicon and Group IV Photonics

H. Radamson, L. Thylén, 2015 .

CVD growth of high speed SiGe HBTs using SiH4

J. Grahn, H. Radamson, G. Landgren, 2000 .

M. Kolahdouz, M. Fathollahzadeh, H. Aghababa, 2022, Micromachines.

Selective Digital Etching of Silicon-Germanium using Nitric and Hydrofluoric Acids.

A. Du, Guilei Wang, Huilong Zhu, 2020, ACS applied materials & interfaces.

A Si/SiGe MOSFET utilizing low-temperature wafer bonding

H. Radamson, S. Chatzandroulis, D. Goustouridis, 2005 .

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Jun Yu Li, R. Liang, Jun Xu, 2022, Nanomaterials.

Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD

Guilei Wang, H. Radamson, Wenwu Wang, 2021, Journal of Materials Science: Materials in Electronics.

Integrating 3D PIN germanium detectors with high-k ALD fabricated slot waveguides

M. Ostling, H. Radamson, M. Naiini, 2014, 2014 15th International Conference on Ultimate Integration on Silicon (ULIS).

Strain and Electrical Characterization of Boron-Doped SiGeC Layers Grown by Chemical Vapor Deposition

H. Radamson, J. Hållstedt, S. Zhang, 2004 .

Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation

Tianchun Ye, E. Simoen, Guilei Wang, 2016, IEEE Transactions on Electron Devices.

Study of n-type doping in germanium by temperature based PF+ implantation

Guilei Wang, Jinbiao Liu, Junfeng Li, 2019, Journal of Materials Science: Materials in Electronics.

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

Luyue Xie, A. Du, Guilei Wang, 2020, Nanomaterials.

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

Tianchun Ye, Guilei Wang, H. Radamson, 2022, Nanomaterials.

Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETs

H. Radamson, J. Hållstedt, P. Hellström, 2008 .

Metal nano-floating gate memory devices fabricated at low temperature

C. Pearson, M. Petty, H. Radamson, 2006 .

Selective epitaxy of Si1-xGex layers for complementary metal oxide semiconductor applications

H. Radamson, L. Hultman, A. Lindgren, 2003 .

Enhanced n-type dopant solubility in tensile-strained Si

A. Smith, N. Cowern, H. Radamson, 2008 .

The electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy

H. Radamson, B. Monemar, P. Holtz, 1996 .

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Tianchun Ye, Guilei Wang, H. Radamson, 2022, Micromachines.

Selective Epitaxy of Group IV Materials for CMOS Application

M. Kolahdouz, Guilei Wang, H. Radamson, 2018, Complementary Metal Oxide Semiconductor.

MOSFETs with recessed SiGe Source/Drain junctions formed by selective etching and growth

Shi-Li Zhang, M. Östling, H. Radamson, 2004 .

Si δ-layers embedded in GaAs

H. Radamson, B. Monemar, P. Holtz, 1998 .

Phase Formation Sequence of Nickel Silicides from Rapid Thermal Annealing of Ni on 4H-SiC

J. Jordan-Sweet, C. Cabral, C. Lavoie, 1997 .

Unprecedented Thermoelectric Power Factor in SiGe Nanowires Field-Effect Transistors

M. Toprak, S. Marcinkevičius, H. Radamson, 2017 .

Sensitivity of Signal-to-Noise Ratio to the Layer Profile and Crystal Quality of SiGe/Si Multilayers

M. Kolahdouz, H. Radamson, A. Abedin, 2016 .

Improvement of infrared detection using Ge quantum dots multilayer structure

M. Kolahdouz, H. Radamson, Ali Afshar Farniya, 2010 .

Phosphorus profile control in low-temperature silicon epitaxy by reduced pressure chemical vapor deposition

J. Grahn, H. Radamson, E. Suvar, 2002 .

CoSi2/Si1−xGex/Si(001) heterostructures formed through different reaction routes: Silicidation‐induced strain relaxation, defect formation, and interlayer diffusion

Magnus Willander, Omer Nur, Lars Hultman, 1995 .

Electrical and structural characterization of PtSi/p-Si1−xGex low Schottky barrier junctions prepared by co-sputtering

O. Nur, M. Willander, R. Turan, 1997 .

Substrate engineering for Ni-assisted growth of carbon nano-tubes

M. Kolahdouz, H. Radamson, Z. Kolahdouz, 2012 .

PECVD-grown carbon nanotubes on silicon substrates with a nickel-seeded tip-growth structure

H. Radamson, S. Mohajerzadeh, Y. Abdi, 2006 .

Increased nucleation temperature of NiSi2 in the reaction of Ni thin films with Si1−xGex

Shi-Li Zhang, Henry H. Radamson, D. Mangelinck, 2002 .

On the Manifestation of Ge Pre-Amorphization Implantation (PAI) in Forming Ultrathin TiSix for Ti Direct Contact on Si in Sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) Technology Nodes

Tianchun Ye, Jun Luo, E. Simoen, 2017 .

Strain characterization of CoSi2/n‐Si0.9Ge0.1/p‐Si heterostructures

K. Maex, C. Petersson, O. Nur, 1994 .

The effect of carbon and germanium on phase transformation of nickel on Si1-x-yGexCy epitaxial layers

Mats Blomqvist, Lars Hultman, Henry H. Radamson, 2004 .

Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition

H. Radamson, J. Hållstedt, 2005 .

Morphological instability of NiSi1−uGeu on single-crystal and polycrystalline Si1−xGex

Shi-Li Zhang, Henry H. Radamson, Zhibin Zhang, 2004 .

Nano-structuring in SiGe by oxidation induced anisotropic Ge self-organization

I. Berbezier, A. Ronda, H. Radamson, 2013 .

Improved designs of Si-based quantum wells and Schottky diodes for IR detection

M. Kolahdouz, M. Östling, H. Radamson, 2016 .

A low cost multi quantum SiGe/Si/Schottky structure for high performance IR detectors

M. Kolahdouz, M. Ostling, H. Radamson, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Effects of carbon pre-germanidation implant into Ge on the thermal stability of NiGe films

Jun Luo, Hong Liu, Guilei Wang, 2015 .

Effects of Carbon Pre-Germanidation Implantation on the Thermal Stability of NiGe and Dopant Segregation on Both n- and p-Type Ge Substrate

Jun Luo, Hong Liu, Guilei Wang, 2015 .

Complementing Silicon With Other Materials for Light Emission, Efficient Light Modulation and Subwavelength Light Confinement

H. Radamson, L. Thylén, 2015 .

The effect of strained Si1−xGex and Si1−yCy layers for La0.75Sr0.25MnO3 films grown on oxide-buffered Si substrates

A. Grishin, Joo-Hyung Kim, H. Radamson, 2006 .

Challenges in ultra-shallow junction technology

E. Simoen, H. Radamson, 2018 .

Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition

H. Radamson, L. Hultman, J. Hållstedt, 2004 .

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

Linpeng Dong, Guilei Wang, Jinbiao Liu, 2021, Nanomaterials.

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Linpeng Dong, H. Radamson, Yuanhao Miao, 2023, Nanomaterials.

Properties of La0.75Sr0.25MnO3 films grown on Si substrate with Si1−xGex and Si1−yCy buffer layers

A. Grishin, Joo-Hyung Kim, H. Radamson, 2006 .

Phosphorus and boron diffusion in silicon under equilibrium conditions

H. Radamson, B. Svensson, J. S. Christensen, 2003 .

Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure

Shi-Li Zhang, J. Grahn, M. Östling, 2000 .

Dopant redistribution and formation of electrically active complexes in SiGe

H. Radamson, B. Svensson, E. Monakhov, 2001 .

Formation of shallow junctions by HCl-based Si etch followed by selective epitaxy of B-doped Si1-xGex in RPCVD

M. Östling, H. Radamson, P. Hellström, 2004 .

Selective epitaxial growth of B-doped SiGe and HCl etch of Si for the formation of SiGe:B recessed source and drain (pMOS transistors)

M. Kolahdouz, H. Radamson, J. Hållstedt, 2008 .

Integration of HCl chemical vapour etching and SiGe:B selective epitaxy for source/drain application in MOSFETs

M. Kolahdouz, M. Östling, H. Radamson, 2006 .

Systematic Optimization of Boron Diffusion for Solar Cell Emitters

M. Kolahdouz, H. Aghababa, H. Radamson, 2017, Journal of Electronic Materials.

Systematic optimization of phosphorous diffusion for solar cell application

M. Kolahdouz, H. Aghababa, H. Radamson, 2016, Journal of Materials Science: Materials in Electronics.

Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application

Henry H. Radamson, E. Trybom, Mohammadreza Kolahdouz, 2010 .

Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers

J. Hallstedt, M. Ostling, R. Wise, 2009, IEEE Transactions on Nanotechnology.

Loading effect in SiGe layers grown by dichlorosilane- and silane-based epitaxy

H. Radamson, A. Bentzen, C. Menon, 2001 .

Moore’s Law for Photonics and Electronics

Lars Thylén, Henry Radamson, H. Radamson, 2015 .

Improvement in epitaxial quality of selectively grown Si1−xGex layers with low pattern sensitivity for CMOS applications

M. Östling, H. Radamson, J. Hållstedt, 2005 .

Methods to reduce the loading effect in selective and non-selective epitaxial growth of sigec layers

M. Östling, H. Radamson, J. Hållstedt, 2004 .

Mechanisms of diffusion-enhanced thermal stability of Si/Si1−xGex/Si heterostructures grown by chemical vapor deposition

H. Radamson, A. Bentzen, C. Menon, 2004 .

Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

Guilei Wang, Jinbiao Liu, Junfeng Li, 2022, 2204.11470.

The effective masses in strained InGaAs/InP quantum wells deduced from magnetoexcitation spectroscopy

Per-Olof Holtz, Gunnar Landgren, Bo Monemar, 1997 .

Electron mobility enhancement in Si using doubly δ‐doped layers

O. Nur, M. Willander, H. Radamson, 1994 .

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

Guilei Wang, H. Radamson, Wenwu Wang, 2022, Nanomaterials.

Negative differential resistance at room temperature in δ ‐doped diodes grown by Si‐molecular beam epitaxy

H. Radamson, M. Sardela, G. V. Hansson, 1994 .

Nanometer-Thick ZnO/SnO2 Heterostructures Grown on Alumina for H2S Sensing

T. Törndahl, H. Radamson, Ben Li, 2022, ACS applied nano materials.

Miniaturization of CMOS

Xiaobin He, Yong Du, Junjie Li, 2019, Micromachines.

Si and SiGe Nanowire for Micro-Thermoelectric Generator: A Review of the Current State of the Art

Guilei Wang, H. Radamson, M. Procek, 2021, Frontiers in Materials.

Vacancy-impurity pairs in n-type Si1-xGex studied by positron spectroscopy

H. Radamson, J. Hållstedt, J. Slotte, 2006 .

Influence of surface treatment prior to ALD high-/spl kappa/ dielectrics on the performance of SiGe surface-channel pMOSFETs

S.-L. Zhang, M. Ostling, P.-E. Hellstrom, 2004, IEEE Electron Device Letters.

A Base-Collector Architecture for SiGe HBTs using Low-Temperature CVD Epitaxy Combined with Chemical-Mechanical Polishing

E. Haralson, J. Grahn, H. Radamson, 2002 .

Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application

Guilei Wang, Huilong Zhu, H. Radamson, 2020, Nanoscale Research Letters.

Characterization of highly boron-doped Si, Si1 − xGex and Ge layers by high-resolution transmission electron microscopy

Lars Hultman, H. Radamson, L. Hultman, 1995 .

Metal Oxide Semiconductor Field Effect Transistors

H. Radamson, L. Thylén, 2015 .

Si1−yCy/Si(001) heterostructures made by sublimation of SiC during silicon molecular beam epitaxy

H. Radamson, G. Pozina, G. V. Hansson, 1997 .

Electrical properties of sub-100 nm SiGe nanowires

H. Radamson, M. Toprak, G. Jayakumar, 2016 .

Fabrication and thermoelectric characterization of GeSn nanowires

H. Radamson, M. Toprak, M. Noroozi, 2014, 2014 15th International Conference on Ultimate Integration on Silicon (ULIS).

State of the Art and Future Perspectives in Advanced CMOS Technology

Xiaobin He, Huilong Zhu, Yong Du, 2020, Nanomaterials.

Influence of doping on thermal stability of Si/Si1−xGex/Si heterostructures

H. Radamson, J. S. Christensen, A. Kuznetsov, 2003 .

The Challenges of Advanced CMOS Process from 2D to 3D

Xiaobin He, Yanbo Zhang, Jinbiao Liu, 2017 .

Understanding dipole formation at dielectric/dielectric hetero-interface

Tianchun Ye, Jing Zhang, Chao Zhao, 2018, Applied Physics Letters.

Improvement of the Thermal Stability of Nickel Stanogermanide by Carbon Pre-Stanogermanidation Implant into GeSn Substrate

Hong Liu, Jun Luo, Chao Zhao, 2015 .

SiNx films and membranes for photonic and MEMS applications

Yaodong Liu, Guilei Wang, Junfeng Li, 2019, Journal of Materials Science: Materials in Electronics.

Growth, electrical properties and reciprocal lattice mapping characterization of heavily B-doped, highly strained silicon-molecular beam epitaxial structures

J. Ekberg, H. Radamson, J. Sundgren, 1994 .

Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)

Chao Zhao, Jiang Yan, Changliang Qin, 2013 .

Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition

M. Östling, H. Radamson, J. Hållstedt, 2005 .

Strain characterization of Ge1−xSix and heavily B-doped Ge layers on Ge(001) by two-dimensional reciprocal space mapping

H. Radamson, L. Hultman, J. Birch, 1996 .

The role of low temperature growth defects for the stability of strained Si/Si1−xGex heterostructures

H. Radamson, G. V. Hansson, W. Ni, 1996 .

A silicon molecular beam epitaxy system dedicated to device-oriented material research

A. Henry, J. Ekberg, H. Radamson, 1995 .

Characterization of highly Sb-doped Si using high-resolution x-ray diffraction and transmission electron microscopy

Lars Hultman, Henry H. Radamson, Göran V. Hansson, 1994 .

Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million.

Jie Yang, Tianchun Ye, Guilei Wang, 2023, ACS applied materials & interfaces.

Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching

A. Fischer, F. Niklaus, B. Malm, 2012 .

Layer-by-layer 3D printing of Si micro- and nanostructures by Si deposition, ion implantation and selective Si etching

A. Fischer, G. Stemme, F. Niklaus, 2012, 2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO).

Recessed and epitaxially regrown SiGe(B) source/drain junctions with Ni salicide contacts

M. Östling, H. Radamson, P. Hellström, 2004 .

pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology

Tianchun Ye, Chao Zhao, Huilong Zhu, 2017, Nanoscale Research Letters.

HfO2 gate dielectrics on strained-Si and strained-SiGe layers

Mikael Johansson, Stefan Bengtsson, Per Lundgren, 2003 .

Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors

A. N. Yablonsky, H. Riemann, H. Hübers, 2007 .

Investigation of Properties of Highly Boron-Doped SiGe(C) Thin Layers

H. Radamson, V. Palenskis, J. Hållstedt, 2004 .

Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane

M. Östling, H. Radamson, A. Abedin, 2016 .

Characterization of SiGe/Si multi-quantum wells for infrared sensing

M. Kolahdouz, M. Östling, H. Radamson, 2013 .

A comparison of power factor in n and p-type SiGe nanowires for thermoelectric applications

M. Toprak, H. Radamson, G. Jayakumar, 2017 .

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

H. Radamson, Yuanhao Miao, Ben Li, 2023, ACS Applied Nano Materials.

SiGe/Si quantum structures as a thermistor material for low cost IR microbolometer focal plane arrays

Jan Y. Andersson, Henry H. Radamson, Stanley Wissmar, 2011 .

The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids

Guilei Wang, Huilong Zhu, H. Radamson, 2021, Nanomaterials.

Monolithic Nanoscale Photonics-Electronics Integration in Silicon and Other Group IV Elements

Lars Thylén, Henry Radamson, H. Radamson, 2014 .

Design impact on the performance of Ge PIN photodetectors

Guilei Wang, Jun Luo, Chao Zhao, 2019, Journal of Materials Science: Materials in Electronics.

Strain engineering in GeSnSi materials

M. Östling, H. Radamson, P. Thompson, 2013 .

High performance infra-red detectors based on Si/SiGe multilayers quantum structure

Mikael Östling, Henry H. Radamson, Mohammadreza Kolahdouz, 2012 .

Application of high-resolution x-ray diffraction for detecting defects in SiGe(C) materials

Henry H. Radamson, Julius Hållstedt, H. Radamson, 2005 .

Growth of GeSnSiC layers for photonic applications

A. Hallén, M. Östling, H. Radamson, 2013 .

Structural investigation of SiC epitaxial layers grown under microgravity and on-ground conditions

E. Janzén, M. Syväjärvi, R. Yakimova, 1999 .

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

Guilei Wang, Xiaobin He, Jun Luo, 2021, Nanomaterials.

Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process

A. Du, H. Yin, Huilong Zhu, 2021, IEEE Transactions on Electron Devices.

SiN-based platform toward monolithic integration in photonics and electronics

Guilei Wang, Junfeng Li, Chao Zhao, 2021, Journal of Materials Science: Materials in Electronics.

Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

A. Du, Guilei Wang, Huilong Zhu, 2021, Nanomaterials.

A robust spacer gate process for deca-nanometer high-frequency MOSFETs

B. Malm, M. Östling, H. Radamson, 2006 .

Deep silicon etching for thermopile structures using a modified Bosch process

Qifeng Jiang, Lin Li, Junfeng Li, 2019, Journal of Micro/Nanolithography, MEMS, and MOEMS.

Chemical Vapor Deposition of Silicon in a Lamp-Heated Reactor Effects of Heat Absorption, Emission, and Conduction

Shi-Li Zhang, M. Östling, H. Radamson, 2002 .

Dopant incorporation in thin strained Si layers implanted with Sb

A. Hallén, H. Radamson, A. Azarov, 2010 .

Application of selective epitaxy for formation of ultra shallow SiGe-based junctions

M. Östling, H. Radamson, V. Palenskis, 2004 .