A. Abedin

发表

Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology

Chao Zhao, Huilong Zhu, Jun Luo, 2015 .

Germanium on Insulator Fabrication for Monolithic 3-D Integration

B. Malm, M. Östling, A. Asadollahi, 2018, IEEE Journal of the Electron Devices Society.

Formation of nickel germanides from Ni layers with thickness below 10 nm

J. Jordan-Sweet, C. Lavoie, Shi-Li Zhang, 2017 .

Sensitivity of Signal-to-Noise Ratio to the Layer Profile and Crystal Quality of SiGe/Si Multilayers

M. Kolahdouz, H. Radamson, A. Abedin, 2016 .

Improved designs of Si-based quantum wells and Schottky diodes for IR detection

M. Kolahdouz, M. Östling, H. Radamson, 2016 .

Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p+/n Junction Formation

M. Östling, A. Asadollahi, A. Abedin, 2020 .

Fabrication of Periodic Nanostructure Assemblies by Interfacial Energy Driven Colloidal Lithography

A. Abedin, A. Dev, S. Anand, 2014 .

Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)

Chao Zhao, Jiang Yan, Changliang Qin, 2013 .

Silicon micro-structure and ZnO nanowire hierarchical assortments for light management

A. Abedin, S. Anand, R. Sanatinia, 2013 .

Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane

M. Östling, H. Radamson, A. Abedin, 2016 .

Growth of epitaxial SiGe alloys as etch-stop layers in germanium-on-insulator fabrication

A. Asadollahi, A. Abedin, K. Garidis, 2021 .

Germanium on Insulator Fabrication for Monolithic 3-D Integration

B. Malm, M. Östling, A. Asadollahi, 2018, IEEE Journal of the Electron Devices Society.