A. Pyzyna

发表

FinFET performance advantage at 22nm: An AC perspective

B. Yang, W. Haensch, Y. Zhang, 2008, 2008 Symposium on VLSI Technology.

Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond

I. Lauer, R. L. Bruce, K. Balakrishnan, 2013, 2013 IEEE International Electron Devices Meeting.

Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits

R. Shelby, M. Steffen, J. Sleight, 2022, npj Quantum Information.

Subtractive W contact and local interconnect co-integration (CLIC)

Michael A. Guillorn, Eric A. Joseph, Sebastian U. Engelmann, 2013, 2013 IEEE International Interconnect Technology Conference - IITC.

SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics

V. Jain, B. Zetterlund, D. L. Harame, 2013, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Thin film deposition research and its impact on microelectronics scaling

C. Cabral, C. Lavoie, A. Pyzyna, 2020 .

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

C. Cabral, C. Lavoie, J. Newbury, 2013, IEEE Electron Device Letters.

Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits

R. Shelby, M. Steffen, J. Sleight, 2022, npj Quantum Information.

Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits

R. Shelby, M. Steffen, J. Sleight, 2021, npj Quantum Information.

Tunable electrical properties of TaNx thin films grown by ionized physical vapor deposition

A. Kellock, V. Narayanan, M. Frank, 2014 .

Resistivity of copper interconnects beyond the 7 nm node

L. Gignac, H. Miyazoe, D. Klaus, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm2

E. Joseph, C. Lavoie, M. Guillorn, 2017, 2017 IEEE International Interconnect Technology Conference (IITC).

Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping

Josephine B. Chang, E. Joseph, W. Haensch, 2009 .

CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond

T. Ando, V. Narayanan, J. Bruley, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

W. Haensch, C. Lavoie, J. Newbury, 2010, IEEE Electron Device Letters.

Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node

J. A. Ott, A. Pyzyna, C.-H. Lin, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths

T. Ando, V. Narayanan, E. Leobandung, 2016, 2016 IEEE Symposium on VLSI Technology.