R. Athimulam

Thermal and plasma treatments for improved (sub-)1 nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration scheme

S. Chew, T. Schram, K. Devriendt, 2014 .

Standard cell level parasitics assessment in 20nm BPL and 14nm BFF

A. Mercha, D. Verkest, M. Badaroglu, 2012, International Electron Devices Meeting.