Yu-Long Jiang

Yu-Long Jiang, G. Ru, Yun Tian, 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).

TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ cm2 Contact Resistivities to p-SiGe

D. Mocuta, N. Horiguchi, N. Collaert, 2017, IEEE Transactions on Electron Devices.

Fabrication of electrically bistable organic semiconducting/ferroelectric blend films by temperature controlled spin coating.

Jianchi Zhang, Yu-Long Jiang, Guodong Zhu, 2015, ACS applied materials & interfaces.

Influence of Capping Layer on Threshold Voltage for HKMG FinFET With Short Channel

Yu-Long Jiang, F. Lu, Zhao-Yang Li, 2022, IEEE Transactions on Electron Devices.

Low-temperature solution-based fabrication of high-k HfO2 dielectric thin films via combustion process

Yu-Long Jiang, Jian Zhang, Guodong Zhu, 2017, Journal of Sol-Gel Science and Technology.

Difference Between Atomic Layer Deposition TiAl and Physical Vapor Deposition TiAl in Threshold Voltage Tuning for Metal Gated NMOSFETs

J. Wan, Yu-Long Jiang, Zhao-Yang Li, 2021, IEEE Electron Device Letters.

Oxidation suppression in ytterbium silicidation by Ti∕TiN bicapping layer

C. Detavernier, P. Chu, Qi Xie, 2007 .

Pt interlayer effects on Ni germanosilicide formation and contact properties

X. Qu, Yu-Long Jiang, G. Ru, 2009 .

Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni-Si solid-state reaction

C. Detavernier, X. Qu, Yu-Long Jiang, 2004 .

Rectifying characteristics of sputter-deposited SiGe diodes

X. Qu, Shiyang Zhu, Yu-Long Jiang, 2003 .

Arrays of nanofibers composed of a TiC core and a carbon coating for sensitive electrochemical detection of hydrazine

P. Chu, Yu-Long Jiang, K. Huo, 2011 .

Maskless metal patterning by meniscus-confined electrochemical etching and its application in organic field-effect transistors

Yu-Long Jiang, Fan Xu, Hanxiao Jiang, 2021 .

Electrochemical capacitance-voltage characterization of plasma-doped ultra-shallow junctions

X. Qu, Yu-Long Jiang, G. Ru, 2008 .

Density Functional Theory Study of Cu Adhesion on Rh, Ir, Pd, Ta, Mo, Ru, Co, and Os Surfaces

David-Wei Zhang, X. Qu, Yu-Long Jiang, 2011 .

Achieving sub-1 Ohm-mm Non-Recess S/D Contact Resistance in GaN HEMTs Utilizing Simple CMOS Compatible La/Ti/Al/Ti Metal Contacts

Hongyu Yu, Yu-Long Jiang, Guangnan Zhou, 2019, 1902.00227.

Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition

Qi Xie, Yu-Long Jiang, Bing-Zong Li, 2008 .

Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O

C. Detavernier, Qi Xie, D. Deduytsche, 2007 .

Suppression of Threshold Voltage Variation by TiN Surface Treatment for N-FinFETs With Very Thin Work Function Metal Layers

Yu-Long Jiang, Zhao-Yang Li, Han-Lun Cai, 2023, IEEE Transactions on Electron Devices.

Au Nanoparticles/HfO₂/Fully Depleted Silicon-on-Insulator MOSFET Enabled Rapid Detection of Zeptomole COVID-19 Gene With Electrostatic Enrichment Process

J. Wan, Yu-Long Jiang, K. Xiao, 2023, IEEE Transactions on Electron Devices.

Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors

C. Detavernier, M. Caymax, Shao-Ren Deng, 2012 .

Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

Qi Xie, Yu-Long Jiang, Matty Caymax, 2010 .

High-Performance Ge MOS Capacitors by $\hbox{O}_{2}$ Plasma Passivation and $\hbox{O}_{2}$ Ambient Annealing

C. Detavernier, M. Caymax, Qi Xie, 2011, IEEE Electron Device Letters.

Nickel silicidation on n and p-type junctions at 300°C

J. Poate, X. Qu, Yu-Long Jiang, 2004 .

Lanthanum and Lanthanum Silicide Contacts on N-Type Silicon

Naoto Horiguchi, Yu-Long Jiang, Nadine Collaert, 2017, IEEE Electron Device Letters.

Electrical fatigue in ferroelectric P(VDF-TrFE) copolymer films

Yu-Long Jiang, Guodong Zhu, Jihao Zhang, 2010, IEEE transactions on dielectrics and electrical insulation.

Epitaxy of Ferroelectric P(VDF-TrFE) Films via Removable PTFE Templates and Its Application in Semiconducting/Ferroelectric Blend Resistive Memory.

Yu-Long Jiang, C. Peter, H. Kliem, 2017, ACS applied materials & interfaces.

Improved Thermal Stability of Ferroelectric Phase in Epitaxially Grown P(VDF-TrFE) Thin Films

Jianchi Zhang, Yu-Long Jiang, Jian Zhang, 2016 .

Ultrathin Ni(Pt)Si Film Formation Induced by Laser Annealing

Yu-Long Jiang, Long Li, Bingzong Li, 2013, IEEE Electron Device Letters.

Investigation of Ru/TaN on low dielectric constant material with k=2.7

Qi Xie, X. Qu, Yu-Long Jiang, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Floating Source/Drain Enabled Linear–Linear–Logarithmic Self-Adaptive One-Transistor Active Pixel Sensor

J. Wan, Yu-Long Jiang, J. Liu, 2022, IEEE Transactions on Electron Devices.

The effect of postannealing on the electrical properties of well-aligned n-ZnO nanorods/p-Si heterojunction

Yu-Long Jiang, Xin-Ping Qu, Tao Chen, 2009 .

Optimization of Ni(Pt)/Si-cap/SiGe Silicidation for pMOS Source/Drain Contact

Lin-Lin Wang, Yu-Long Jiang, Jian-Chi Zhang, 2017, IEEE Transactions on Electron Devices.

Pre-doping effects on Ni fully silicided metal gate on SiO2 dielectric

X. Qu, Yu-Long Jiang, Ran Liu, 2008 .

Characterization of thermal stability of Ni(SiGe)/n-SiGe contact formed by isothermal annealing

X. Qu, Yu-Long Jiang, G. Ru, 2011, 2011 IEEE International Interconnect Technology Conference.

Electrically active defects in Ni–Si silicide studied by deep-level transient spectroscopy

Yu-Long Jiang, F. Lu, Yu Chen, 2002 .

Dopant redistribution induced by Ni silicidation at 300/spl deg/C

X. Qu, Yu-Long Jiang, G. Ru, 2004, The Fourth International Workshop on Junction Technology, 2004. IWJT '04..

Ti-capping and heating ramp-rate effects on Ni-silicide film and interface

X. Qu, Yu-Long Jiang, G. Ru, 2005, Extended Abstracts of the Fifth International Workshop on Junction Technology.

Investigation of Ni(Pt)/Si-cap/SiGe solid phase reaction

Yu-Long Jiang, Bingzong Li, Jian-Chi Zhang, 2014, 2014 International Workshop on Junction Technology (IWJT).

Significant Threshold Voltage Shift Induced by Ge Penetration into PMOSFET Channel of 28-nm SRAM

Lin-Lin Wang, Yu-Long Jiang, Run-Ling Li, 2019, IEEE Electron Device Letters.

Nickel silicide formation on shallow junctions

Yu-Long Jiang, G. Ru, A. Agarwal, 2005 .

Ni(Pt)Si thin film formation and its electrical characteristics with Si substrate

Yu-Long Jiang, G. Ru, P. K. Chu, 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).

Thermal Stability of TiN/Ti/p+-Si0.3Ge0.7 Contact With Ultralow Contact Resistivity

D. Mocuta, N. Horiguchi, N. Collaert, 2018, IEEE Electron Device Letters.

Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

X. Qu, Shiyang Zhu, Yu-Long Jiang, 2005 .

Alloying effects in Ni Silicide for CMOS applications

Yu-Long Jiang, G. Ru, Wei Huang, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Cu contact on NiSi substrate with a Ta/TaN barrier stack

X. Qu, Yu-Long Jiang, Ran Liu, 2008 .

Arsenic redistribution induced by low-temperature Ni silicidation at 450°C on shallow junctions

J. Poate, X. Qu, Yu-Long Jiang, 2006 .

Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation

C. Detavernier, J. Poate, X. Qu, 2005 .

Ultrathin Ni(Pt) silicide formation by laser annealing

Yu-Long Jiang, 2015, 2015 15th International Workshop on Junction Technology (IWJT).

Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors

Jianchi Zhang, Yu-Long Jiang, Guodong Zhu, 2015 .

Polarization fatigue in ferroelectric vinylidene fluoride and trifluoroethylene copolymer thin films

Yu-Long Jiang, Hao Yu, Shao-Song Fu, 2011 .

Influence of Poly(methyl metacrylate) Addition on Resistive Switching Performance of P3HT/P(VDF-TrFE) Blend Films

Jianchi Zhang, Yu-Long Jiang, Guodong Zhu, 2017 .

Dissipative particle dynamics simulation of phase separation in semiconducting/ferroelectric blend resistive films

Qiu-song Chen, Yu-Long Jiang, Jian Zhang, 2017 .

Ultraviolet irradiation induced polarization restoration in electrically fatigued ferroelectric polymer films

Yu-Long Jiang, Hao Yu, Guodong Zhu, 2013 .

TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

C. Detavernier, M. Caymax, S. V. D. Berghe, 2011 .

Improved Ohmic Performance by the Metallic Bilayer Contact Stack of Oxygen-Incorporated La/Ultrathin TiSix on n-Si

Naoto Horiguchi, Yu-Long Jiang, Nadine Collaert, 2018, IEEE Transactions on Electron Devices.

Effective Schottky Barrier Height Modulation by an Ultrathin Passivation Layer of GeOxNy for Al/n-Ge(100) Contact

C. Detavernier, Qi Xie, D. Deduytsche, 2011 .

Comparison of the Ru thin films grown on Si, TiN/Si and TaN/Si substrates by plasma enhanced atomic layer deposition

C. Detavernier, Qi Xie, D. Deduytsche, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Performance Improvement by Cold Xe Pre-Amorphization Implant for Nickel Silicidation of 28-nm PMOSFET

Yu-Long Jiang, Run-Ling Li, Zhong-hua Li, 2019, IEEE Electron Device Letters.

Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs

J. Wan, Yu-Long Jiang, Zhao-Yang Li, 2023, IEEE Transactions on Electron Devices.

Performance Improvement by Blanket Boron Implant in the Sigma-Shaped Trench Before the Embedded SiGe Source/Drain Formation for 28-nm PMOSFET

Yu-Long Jiang, Run-Ling Li, Zhong-hua Li, 2020, IEEE Electron Device Letters.

An automatic recoverable organic fuse based on Au/PEDOT:PSS/Au structure

Yu-Long Jiang, Hao Yu, Guodong Zhu, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Patterned ZnO nanorods network transistor fabricated by low-temperature hydrothermal process

Qi Xie, X. Qu, Yu-Long Jiang, 2010 .

Direct Observation of Dipole Influence Induced by a Spin Coated Organic Interfacial Layer on Effective Schottky Barrier Height Modulation of Hg/Si Contact

Yu-Long Jiang, G. Ru, Guodong Zhu, 2014, IEEE Electron Device Letters.

Solvent vapor annealing of ferroelectric P(VDF-TrFE) thin films.

Jianchi Zhang, Yu-Long Jiang, Guodong Zhu, 2014, ACS applied materials & interfaces.

Investigation of ultra-thin Al2O3 film as Cu diffusion barrier on low-k (k=2.5) dielectrics

C. Detavernier, Shao-Ren Deng, Qi Xie, 2011, 2011 IEEE International Interconnect Technology Conference.

Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma

C. Detavernier, S. V. D. Berghe, Qi Xie, 2008 .

A Novel One-Transistor Active Pixel Sensor With Tunable Sensitivity

J. Wan, Yu-Long Jiang, J. Liu, 2021, IEEE Electron Device Letters.

Nickel silicide formation on Si(110) substrate

Yu-Long Jiang, G. Ru, Xiao-Rong Wang, 2010, 2010 International Workshop on Junction Technology Extended Abstracts.

Cu adhesion on tantalum and ruthenium surface: Density functional theory study

David-Wei Zhang, Shao-Ren Deng, X. Qu, 2010 .