H. Hsu

发表

Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect

Y. Hung, Chun-Hu Cheng, Jun Ma, 2020, IEEE Transactions on Nanotechnology.

A Flexible IGZO Thin-Film Transistor With Stacked ${\rm TiO}_{2}$-Based Dielectrics Fabricated at Room Temperature

Chun-Yen Chang, Chun-Hu Cheng, H. Hsu, 2013, IEEE Electron Device Letters.

High-Performance MIM Capacitors Using a High- κ TiZrO Dielectric

S. H. Lin, Chun-Hu Cheng, F. Yeh, 2008 .

Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

S. P. Wang, Chun-Yen Chang, Chun-Hu Cheng, 2019, Vacuum.

Experimental Investigation of Thermal Annealing and Ferroelectric Capacitor Area Effects for Hafnium-Zirconium Oxide Devices

H. Hsu, H. Liu, Sheng-Kai Lee, 2020, Coatings.

High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec−1 swing

Chun-Hu Cheng, Chien Liu, Yu-Chi Fan, 2019 .

Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

Chun-Yen Chang, Chun-Hu Cheng, H. Hsu, 2019, IEEE Transactions on Electron Devices.

High holding voltage segmentation stacking silicon-controlled-rectifier structure with field implant as body ties blocking layer

Chun-Yen Chang, Y. Lan, H. Hsu, 2016 .

Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

C. H. Cheng, H. Hsu, Z. Zheng, 2020, IEEE Journal of the Electron Devices Society.

Bipolar Conduction in Tin-Oxide Semiconductor Channel Treated by Oxygen Plasma for Low-Power Thin-Film Transistor Application

Chun-Yen Chang, H. Hsu, Zhiwei Zheng, 2016, Journal of Display Technology.

Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel

Chun-Yen Chang, P. Chiou, H. Hsu, 2015 .

Physical Modeling of p-Type Fluorinated Al-Doped Tin-Oxide Thin Film Transistors

H. Hsu, D. Kannadassan, V. Velmurugan, 2020, IEEE Journal of the Electron Devices Society.

Progress and challenges in p-type oxide-based thin film transistors

H. Hsu, Zhiwei Zheng, Chun‐Hu Cheng, 2019, Nanotechnology Reviews.

Effect of Plasma Fluorination in p-Type SnO TFTs: Experiments, Modeling, and Simulation

H. Hsu, D. Kannadassan, V. Velmurugan, 2019, IEEE Transactions on Electron Devices.

Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems for Low-Power Display Applications

Chun-Yen Chang, H. Hsu, S. Yen, 2016, Journal of Display Technology.

Improved Negative‐Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

Chun-Yen Chang, H. Hsu, C. Fan, 2018, physica status solidi (RRL) - Rapid Research Letters.

Investigation of Double-Snapback Characteristic in Resistor-Triggered SCRs Stacking Structure

Chun-Yen Chang, Chia-Chi Fan, Chun-Hu Cheng, 2017, IEEE Transactions on Electron Devices.

High-Performance Metal–Insulator–Metal Capacitors With $\hbox{HfTiO}/\hbox{Y}_{2}\hbox{O}_{3}$ Stacked Dielectric

B. Tsui, H. Hsu, Chun‐Hu Cheng, 2010, IEEE Electron Device Letters.

Modified Carbon Papers as Electrode Materials of all-Vanadium Redox Flow Battery

H. Hsu, Wen-Sheng Chang, K. Hsueh, 2013 .

Integration of Dielectric and Ferroelectric Hafnium Aluminum Oxides for Thin‐Film Transistor Applications

H. Hsu, H. Liu, Sheng-Kai Lee, 2020, physica status solidi (RRL) – Rapid Research Letters.

Characteristics of cerium oxide for metal-insulator-metal capacitors

F. Yeh, A. Chin, H. Hsu, 2010 .

Structural stability of thermoelectric diffusion barriers: Experimental results and first principles calculations

Yu Li Lin, H. Hsu, Chun‐Hu Cheng, 2013 .

AlGaN/GaN High-Electron-Mobility Transistors on a Silicon Substrate Under Uniaxial Tensile Strain

H. Chiu, H. Kao, H. Hsu, 2020 .

Improved high‐temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect

H. Hsu, Chun‐Hu Cheng, Zhiwei Zheng, 2014 .

Impact of stress and doping effects on the polarization behavior and electrical characteristics of hafnium–zirconium oxides

H. Hsu, Sheng-Kai Lee, Chun‐Hu Cheng, 2021 .

Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum Oxides

Chun-Yen Chang, Chien Liu, H. Hsu, 2019, IEEE Transactions on Electron Devices.

Structural stability of diffusion barriers in thermoelectric SbTe: From first-principles calculations to experimental results

Yu Li Lin, Chun-Yen Chang, H. Hsu, 2014 .

Investigation on the La Replacement and Little Additive Modification of High-Performance Permanent Magnetic Strontium-Ferrite

Ching-Chien Huang, H. Hsu, G. Shu, 2021 .

Development of p-type zinc oxide nanorods on zirconium-based metallic glass nanotube arrays by facile hydrothermal method for gas sensing applications

J. Chu, H. Hsu, Shrisha, 2023, Chemical Engineering Journal.

An Investigation Into Magnetic Properties, Sintering Shrinkage Characteristics, and Formability of Isotropic Barium Ferrite Permanent Magnets

Ching-Chien Huang, H. Hsu, Chia-Nan Wang, 2022, IEEE transactions on magnetics.

Preparation and magnetic properties of high performance Ca–Sr based M-type hexagonal ferrites

Ching-Chien Huang, H. Hsu, Chun‐Hu Cheng, 2020 .

Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices

H. Hsu, Hsuan-Han Chen, Ruo-Yin Liao, 2023, Materials.

Electrical Characteristics Investigation of Ferroelectric Memories Using Stacked and Mixed Hafnium Zirconium Oxides

H. Hsu, Ruo-Yin Liao, Wu-Ching Chou, 2022, Thin Solid Films.

Performance Investigation of Hafnium-Oxide Negative Capacitance Transistor with Remote Nitrogen Plasma Treatment

Ching-Chien Huang, H. Hsu, Hsuan-Han Chen, 2022, Thin Solid Films.

Effect of Capping Layer on the Ferroelectricity of Hafnium Oxide

Su‐Ting Han, H. Hsu, Hsuan-Han Chen, 2022, Thin Solid Films.

Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering

Ching-Chien Huang, H. Hsu, Hsuan-Han Chen, 2022, IEEE Journal of the Electron Devices Society.

A comparative study of metal-ferroelectric-metal devices using doped- and stacked-hafnium zirconium oxides

Wei-Dong Liu, Yu-Chi Fan, H. Hsu, 2020 .

Stabilizing Ferroelectric Domain Switching of Hafnium Aluminum Oxide Using Metal Nitride Electrode Engineering

Chien Liu, H. Hsu, Hsuan-Han Chen, 2019, ECS Journal of Solid State Science and Technology.

Ferroelectric Characterization of Hafnium-Oxide-Based Ferroelectric Memories with Remote Nitrogen Plasma Treatments

Chun-Yen Chang, Y. Lan, Chien Liu, 2019, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).

Gamma‐Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides

Jun Ma, Chien Liu, H. Hsu, 2019, physica status solidi (RRL) – Rapid Research Letters.

Tantalum Nitride for Copper Diffusion Blocking on Thin Film (BiSb) 2 Te 3

H. Hsu, Chun‐Hu Cheng, Kai-Chi Chen, 2013 .

High performance IGZO/TiO2 thin film transistors using Y2O3 buffer layers on polycarbonate substrate

H. Hsu, C. Chang, Chun‐Hu Cheng, 2013 .

Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement

Chun-Yen Chang, Chia-Chi Fan, Chun-Yuan Tu, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance

Chun-Yen Chang, Chien Liu, H. Hsu, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

Chun-Yen Chang, Chien Liu, H. Hsu, 2015, 2015 73rd Annual Device Research Conference (DRC).

Low power 1T DRAM/NVM versatile memory featuring steep sub-60-mV/decade operation, fast 20-ns speed, and robust 85°C-extrapolated 1016 endurance

Chun-Yen Chang, Chun-Hu Cheng, Hsiao-Hsuan Hsu, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms

Chun-Yen Chang, Chun-Hu Cheng, Hsiao-Hsuan Hsu, 2015, 2015 IEEE International Reliability Physics Symposium.

On the electrical characteristics of ferroelectric FinFET using hafnium zirconium oxide with optimized gate stack

Chun-Yen Chang, Chia-Chi Fan, Ming-Huei Lin, 2018 .

Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

Chun-Yen Chang, Chien Liu, H. Hsu, 2018, physica status solidi (RRL) – Rapid Research Letters.

Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors

P. Chiou, H. Hsu, Yu‐Hsin Lin, 2015 .

High Mobility Bilayer Metal–Oxide Thin Film Transistors Using Titanium-Doped InGaZnO

Chun-Yen Chang, H. Hsu, Chun‐Hu Cheng, 2014, IEEE Electron Device Letters.

Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate

Chun-Yen Chang, H. Hsu, C. Su, 2013 .

Interface‐engineered resistive memory using plasma‐modified electrode on polyimide substrate

H. Hsu, Z. Zheng, Chun‐Hu Cheng, 2014 .

Temperature effects on the performance of ferroelectric FET with random grain phase variation for non-volatile memory application

H. Hsu, L. Ying, Z. Zheng, 2023, Semiconductor Science and Technology.

The impact of charges at the dielectric/channel interface on performance degradation in negative capacitance ferroelectric FETs

H. Hsu, L. Ying, Z. Zheng, 2023, Semiconductor Science and Technology.

Crystallized Ohmic Contact Effect in AlGaN/GaN High Electron Mobility Transistor

T. Teng, H. Hsu, Liann-Be Chang, 2013 .

Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications

P. Chiou, H. Hsu, Yu‐Hsin Lin, 2015, Journal of Display Technology.

Flexible InGaZnO thin film transistors using stacked Y2O3/TiO2/Y2O3 gate dielectrics grown at room temperature

Chun-Yen Chang, H. Hsu, Chun‐Hu Cheng, 2013 .

Temperature-Dependent Transfer Characteristics of Low Turn-On Voltage InGaZnO Metal-Oxide Devices With Thin Titanium Oxide Capping Layers

Chun-Yen Chang, P. Chiou, H. Hsu, 2015, Journal of Display Technology.

High performance metal/insulator/metal capacitors using HfTiO as dielectric

B. Tsui, H. Hsu, Chun‐Hu Cheng, 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching

Chien Liu, H. Hsu, Chih-Chieh Hsu, 2019, Symposium on VLSI Technology.

Stability of Vanadium Electrolytes in the Vanadium Redox Flow Battery

H. Hsu, Wen-Sheng Chang, K. Hsueh, 2013 .

Amorphous bilayer TiO2–InGaZnO thin film transistors with low drive voltage

Chun-Yen Chang, P. Chiou, H. Hsu, 2014 .

Room-temperature flexible thin film transistor with high mobility

Chun-Yen Chang, H. Hsu, Chun‐Hu Cheng, 2013 .

High- κ TiCeO MIM capacitors with a dual-plasma interface treatment

F. Yeh, A. Chin, H. Hsu, 2010 .

Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics

Chun-Yen Chang, H. Hsu, Shuqing Yu, 2013, 2013 IEEE International Conference of Electron Devices and Solid-state Circuits.