K. Kakushima

发表

Geometry and temperature effects on the threshold voltage characteristics of silicon nanowire MOS transistors

H. Iwai, S. Dong, H. Wong, 2017 .

Electronic properties of ultrathin high-κ dielectrics studied by ballistic electron emission microscopy

H. Iwai, K. Pey, K. Kakushima, 2011 .

Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors

H. Iwai, K. Kakushima, K. Natori, 2015 .

Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure.

H. Iwai, K. Shiraishi, K. Kakushima, 2014, Optics express.

Influence of strained drain on performance of ballistic channel devices

H. Iwai, P. Ahmet, K. Kakushima, 2012 .

Electrical Characterization and Materials Stability Analysis of ${\rm La}_{2}{\rm O}_{3}/{\rm HfO}_{2}$ Composite Oxides on n-${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ MOS Capacitors With Different Annealing Temperatures

H. Iwai, Carlos H. Díaz, P. Ahmet, 2013, IEEE Electron Device Letters.

Anomalous degradation of low-field mobility in short-channel metal-oxide-semiconductor field-effect transistors

H. Iwai, K. Kakushima, K. Natori, 2015 .

Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis

H. Iwai, K. Kakushima, K. Natori, 2011 .

Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs

H. Iwai, K. Takeuchi, T. Saraya, 2020, IEEE Transactions on Semiconductor Manufacturing.

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

H. Iwai, T. Saraya, T. Hiramoto, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Vertical Bipolar Transistor Test Structure for Measuring Minority Carrier Lifetime in IGBTs

H. Iwai, K. Takeuchi, T. Saraya, 2019, 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS).

3300V Scaled IGBTs Driven by 5V Gate Voltage

H. Iwai, K. Takeuchi, T. Saraya, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Modeling and Simulation of Si IGBTs

H. Iwai, T. Saraya, T. Hiramoto, 2020, 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

H. Iwai, T. Saraya, T. Hiramoto, 2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

H. Iwai, K. Takeuchi, T. Saraya, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment

Ken Takeuchi, Hiroshi Iwai, Kuniyuki Kakushima, 2018, 2018 IEEE Symposium on VLSI Circuits.

Degradation Mechanisms of Contact Point During Switching Operation of MEMS Switch

H. Fujita, K. Kakushima, T. Ishida, 2013, Journal of Microelectromechanical Systems.

Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2017, 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM).

Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2017, 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM).

A possible origin of the large leakage current in ferroelectric Al1−x Sc x N films

H. Wakabayashi, K. Kakushima, T. Hoshii, 2021 .

NiSi2 as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO2 thin films

H. Funakubo, H. Wakabayashi, K. Kakushima, 2020, Japanese Journal of Applied Physics.

Optimization of gate insulator material for GaN MIS-HEMT

H. Iwai, Y. Lin, K. Kakushima, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices

Hiroshi Iwai, Kuniyuki Kakushima, C. Dou, 2012 .

Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2018, IEEE Journal of the Electron Devices Society.

Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ∼ Impact of charge-centroid in the channel due to quantum effect on 1/f noise ∼

K. Kakushima, H. Iwai, K. Ohmori, 2011, 2011 International Electron Devices Meeting.

Advantages of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

Hiroshi Iwai, Kuniyuki Kakushima, Soshi Sato, 2012 .

Size-dependent properties of ballistic silicon nanowire field effect transistors

Hiroshi Iwai, Kenji Natori, Kuniyuki Kakushima, 2010 .

Electrical characterization of Si nanowire field-effect transistors with semi gate-around structure suitable for integration

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2010 .

Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation

Hiroshi Iwai, Kuniyuki Kakushima, Y. Nara, 2007 .

Effects of N2-Based Annealing on the Reliability Characteristics of Tungsten/ La2O3/Silicon Capacitors

H. Iwai, T. Hattori, N. Sugii, 2007 .

Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2018, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

The effect of isotropic and anisotropic scattering in drain region of ballistic channel diode

H. Iwai, N. Sugii, A. Nishiyama, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

Self-heating-aware cell design for p/n-vertically-integrated nanowire on FinFET beyond 3 nm technology node

H. Wakabayashi, K. Kakushima, A. Hori, 2020 .

Characteristic Variabilities of Subnanometer EOT La2O3 Gate Dielectric Film of Nano CMOS Devices

H. Wong, K. Kakushima, H. Iwai, 2021, Nanomaterials.

Thermal stability of Ni silicide films on heavily doped n+ and p+ Si substrates

T. Nagata, T. Chikyow, H. Iwai, 2008 .

XPS study on the effects of thermal annealing on CeO2/La2O3 stacked gate dielectrics

H. Iwai, H. Wong, K. Kakushima, 2016 .

Selection of rare earth silicate with SrO capping for EOT scaling below 0.5 nm

H. Iwai, T. Hattori, N. Sugii, 2009, 2009 Proceedings of the European Solid State Device Research Conference.

Influence of source/drain formation process on resistance and effective mobility for scaled multi-channel MOSFET

H. Iwai, N. Vulliet, T. Ernst, 2011 .

Self-Heating-Effect-Free p/n-Stacked-NW on Bulk-FinFETs and 6T-SRAM Layout

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2018, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).

Analysis and Simulation of the Postbreakdown $I-V$ Characteristics of n-MOS Transistors in the Linear Response Regime

K. Kakushima, H. Iwai, J. Sune, 2013, IEEE Electron Device Letters.

Analysis of Threshold Voltage Variations in Fin Field Effect Transistors

H. Iwai, V. Rao, P. Ahmet, 2011 .

Analysis of Threshold Voltage Variation in Fin Field Effect Transistors: Separation of Short Channel Effects

H. Iwai, V. Rao, P. Ahmet, 2010 .

Rare earth oxides in microelectronics

H. Iwai, V. Rao, P. Ahmet, 2006 .

The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs

H. Iwai, N. Sugii, H. Iwai, 2012 .

Effect of thin Si insertion at metal gate/high-k interface on electrical characteristics of MOS device with La2O3

H. Iwai, N. Sugii, A. Nishiyama, 2011 .

N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films by Si ion implantation

H. Wakabayashi, K. Kakushima, T. Hoshii, 2021 .

Power generation characteristics of Schottky-type solar cells fabricated using barium silicide

H. Iwai, K. Kakushima, Takahiro Ito, 2015 .

Design and fabrication of MEMS-controlled probes for studying the nano-interface under in situ TEM observation

H. Fujita, H. Toshiyoshi, Y. Nakajima, 2010 .

Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates

H. Iwai, H. Wakabayashi, K. Kakushima, 2017 .

On the scaling of lanthanum oxide gate dielectric film into the subnanometer EOT range

H. Iwai, H. Wong, K. Kakushima, 2016, 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Metal inserted poly-Si with high temperature annealing for achieving EOT of 0.62nm in La-silicate MOSFET

H. Iwai, N. Sugii, A. Nishiyama, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer

H. Iwai, T. Hattori, N. Sugii, 2011 .

Modeling of Vibrating-Body Field-Effect Transistors Based on the Electromechanical Interactions Between the Gate and the Channel

S. Samukawa, K. Kakushima, M. Sugiyama, 2012, IEEE Transactions on Electron Devices.

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity

Wei Li, Hiroshi Iwai, Nobuyuki Sugii, 2015, Microelectron. Reliab..

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes

Wei Li, Hiroshi Iwai, Nobuyuki Sugii, 2015, Microelectron. Reliab..

Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

H. Iwai, W. Saito, H. Wakabayashi, 2016 .

One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

H. Iwai, H. Ohashi, H. Wakabayashi, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application

H. Iwai, K. Kakushima, J. Yao, 2017, IEEE Electron Device Letters.

GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

H. Iwai, H. Ohashi, H. Wakabayashi, 2018 .

Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

H. Iwai, S. Yamasaki, H. Ohashi, 2014 .

Temperature-Independent Two-Dimensional Hole Gas Confined at GaN/AlGaN Heterointerface

H. Iwai, S. Yamasaki, H. Ohashi, 2013 .

GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation

H. Wakabayashi, K. Kakushima, E. Chang, 2022, Japanese Journal of Applied Physics.

Study of Trap Generation in the Sc2O3/La2O3/SiOx Gate Dielectric Stack by Scanning Tunneling Microscopy

H. Iwai, K. Pey, K. Kakushima, 2008 .

Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal

H. Iwai, N. Sugii, A. Nishiyama, 2012, IEEE Electron Device Letters.

Real-time observation of trap generation by scanning tunneling microscopy and the correlation to high-κ gate stack breakdown

H. Iwai, K. Pey, K. Kakushima, 2009, 2009 IEEE International Reliability Physics Symposium.

A proposal of novel resistive switching devices using CeOx with NiSi 2 electrodes

K. Kakushima, S. Kano, 2013 .

XPS study on the effects of thermal annealing on CeO2/La2O3 stacked gate dielectrics

H. Iwai, H. Wong, K. Kakushima, 2015, TENCON 2015 - 2015 IEEE Region 10 Conference.

Improvement of interfacial properties with interfacial layer in La2O3/Ge structure

H. Iwai, N. Sugii, P. Ahmet, 2007 .

Effects of Scattering Direction of Hot Electrons in the Drain of Ballistic n+–i–n+ Diode

H. Iwai, P. Ahmet, K. Kakushima, 2011 .

Electrical Characteristics of Rare Earth (La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric

T. Hattori, N. Sugii, A. Nishiyama, 2010 .

Annealing effects on a high-k lanthanum oxide film on Si (001) analyzed by aberration-corrected transmission electron microscopy/scanning transmission electron microscopy and electron energy loss spectroscopy

H. Iwai, N. Tanaka, K. Kakushima, 2010 .

Localized degradation and breakdown study of cerium-oxide high-к gate dielectric material using scanning tunneling microscopy

H. Iwai, K. Pey, K. Kakushima, 2010, 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS

H. Iwai, Y. Shiraki, Arata Komatsu, 2013 .

Direct real-time observation of channel potential fluctuation correlated to random telegraph noise of drain current using nanowire MOSFETs with four-probe terminals

H. Iwai, M. Sato, K. Yamada, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Capacitance–Voltage Characterization of La2O3 Metal–Oxide–Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods

H. Iwai, T. Hattori, N. Sugii, 2011 .

Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer

H. Iwai, T. Hattori, N. Sugii, 2011 .

Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement

H. Iwai, N. Sugii, K. Tachi, 2008 .

Study of High-κ/In0.53Ga0.47As Interface by Hard X-ray Photoemission Spectroscopy

H. Iwai, Masato Watanabe, H. Nohira, 2011 .

Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques

H. Iwai, N. Sugii, A. Nishiyama, 2011 .

Electrical Properties of Yttrium-Titanium Oxide High-k Gate Dielectric on Ge

H. Iwai, N. Sugii, A. Nishiyama, 2010 .

Reaction and formation of La-silicate gate dielectrics on SiC substrates

Sugii, H. Iwai, S. Yamakawa, 2015 .

High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film Using UHV RF Magnetron Sputtering and Sulfurization

H. Wakabayashi, K. Kakushima, T. Hoshii, 2019, IEEE Journal of the Electron Devices Society.

Enhancement-mode accumulation capacitance–voltage characteristics in TiN/ALD-Al2O3/sputtered-MoS2 top-gated stacks

H. Wakabayashi, K. Kakushima, T. Hoshii, 2020, Japanese Journal of Applied Physics.

Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing

H. Wakabayashi, K. Kakushima, T. Tatsumi, 2022, Japanese Journal of Applied Physics.

Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs

H. Iwai, K. Takeuchi, T. Saraya, 2019, Japanese Journal of Applied Physics.

An extraction method of charge trapping site distribution in AlGaN layer in GaN HEMT

H. Iwai, T. Baba, H. Wakabayashi, 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure

H. Iwai, N. Sugii, W. Saito, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

An ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes

H. Iwai, N. Sugii, W. Saito, 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

Further EOT Scaling below 0.4 nm for High-k Gated MOSFET

H. Iwai, T. Hattori, N. Sugii, 2008 .

Selection of rare earth silicates for highly scaled gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010 .

Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes

H. Iwai, T. Yasuda, P. Ahmet, 2011 .

Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5 nm

T. Hattori, N. Sugii, A. Nishiyama, 2011 .

Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2022, Scientific Reports.

Photovoltaic properties of lateral ultra-thin Si p-i-n structure

H. Iwai, H. Wakabayashi, K. Kakushima, 2018, 2018 China Semiconductor Technology International Conference (CSTIC).

Photovoltaic Characteristics of Ultra-Thin Single Crystalline Silicon Solar Cells

H. Iwai, H. Wakabayashi, K. Kakushima, 2016 .

Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices

H. Iwai, T. Hattori, N. Sugii, 2011 .

Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate

H. Wakabayashi, K. Kakushima, T. Yoda, 2022, Japanese Journal of Applied Physics.

Advantages of Silicon Nanowire MOSFETs over Planar Ones Investigated from the Viewpoints of Static and Noise Properties

H. Iwai, K. Yamada, K. Kakushima, 2011 .

Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films

H. Wakabayashi, K. Kakushima, T. Hoshii, 2022, Japanese Journal of Applied Physics.

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2014, Microelectron. Reliab..

Gentle cold welding between gold nano objects driven by electrical field and atomic rearrangement

H. Fujita, K. Kakushima, T. Ishida, 2011 .

Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection

H. Wakabayashi, K. Kakushima, T. Hoshii, 2020, Japanese Journal of Applied Physics.

Ni silicidation on heavily doped Si substrates

T. Nagata, T. Chikyow, H. Iwai, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs

H. Iwai, N. Sugii, A. Nishiyama, 2015 .

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

H. Iwai, S. Dong, H. Wong, 2015 .

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

Hiroshi Iwai, Nobuyuki Sugii, Kenji Natori, 2014, IEEE Transactions on Electron Devices.

DNA manipulation and retrieval from an aqueous solution with micromachined nanotweezers.

Hiroyuki Fujita, Noritada Kaji, Kuniyuki Kakushima, 2003, Analytical chemistry.

Electronic trap characterization of the Sc2O3∕La2O3 high-κ gate stack by scanning tunneling microscopy

H. Iwai, K. Pey, K. Kakushima, 2008 .

Role of Dislocation Movement in the Electrical Conductance of Nanocontacts

Hiroyuki Fujita, Kuniyuki Kakushima, Teruyasu Mizoguchi, 2012, Scientific Reports.

Effects of thermal annealing on the interface between tungsten and CeO2/La2O3 stack gate dielectrics

H. Iwai, H. Wong, K. Kakushima, 2017 .

Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography.

T. Matsushita, H. Wakabayashi, K. Kakushima, 2017, Nano letters.

Si nanowire FET and its modeling

Hiroshi Iwai, Kenji Ohmori, Kuniyuki Kakushima, 2011, Science China Information Sciences.

Electrical characteristics of asymmetrical silicon nanowire field-effect transistors

H. Iwai, K. Yamada, K. Kakushima, 2011 .

La2O3 gate dielectrics for AlGaN/GaN HEMT

Hiroshi Iwai, Kuniyuki Kakushima, Hitoshi Wakabayashi, 2016, Microelectron. Reliab..

Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance

H. Funakubo, H. Wakabayashi, K. Kakushima, 2020, 2020 IEEE International Memory Workshop (IMW).

Laser doping for microelectronics and microtechnology

Tarik Bourouina, Kuniyuki Kakushima, Elisabeth Dufour-Gergam, 2004, SPIE High-Power Laser Ablation.

Electrical Properties of CeO2/La2O3 Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition

H. Iwai, T. Yasuda, P. Ahmet, 2012 .

Valence number transition and silicate formation of cerium oxide films on Si(100)

H. Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2012 .

Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering

H. Wakabayashi, K. Kakushima, E. Chang, 2021 .

Trapping characteristics of lanthanum oxide gate dielectric film explored from temperature dependent current-voltage and capacitance-voltage measurements

Hiroshi Iwai, Kuniyuki Kakushima, Chandan Kumar Sarkar, 2007 .

Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2019, Applied Physics Letters.

Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy

Hiroshi Iwai, Nagarajan Raghavan, Kuniyuki Kakushima, 2011 .

Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks: A nanoscopic study

Hiroshi Iwai, Kuniyuki Kakushima, Michel Bosman, 2014 .

Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer

Hiroshi Iwai, Nobuyuki Sugii, Chunmeng Dou, 2012, Microelectron. Reliab..

Nanoscale electrical and physical study of polycrystalline high-κ dielectrics and proposed reliability enhancement techniques

K. Kakushima, H. Iwai, Z. R. Wang, 2011, 2011 International Reliability Physics Symposium.

Polarity dependent breakdown of the high-κ/SiOx gate stack : A phenomenological explanation by scanning tunneling microscopy

H. Iwai, K. Pey, K. Kakushima, 2008 .

Bilayer gate dielectric study by scanning tunneling microscopy

Hiroshi Iwai, Cedric Troadec, Kuniyuki Kakushima, 2007 .

Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate

H. Iwai, T. Hattori, N. Sugii, 2007 .

Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal–Oxide–Semiconductor Capacitors

M. Hudait, K. Kakushima, Yueh-Chin Lin, 2012 .

Thermal-stability improvement of LaON thin film formed using nitrogen radicals

H. Iwai, N. Sugii, K. Tachi, 2007 .

Highly Stable Spatio-Temporal Mechanical Characterization of Nanocontact between Sharp Tips Using Electrostatic Microactuator inside Transmission Electron Microscope

H. Fujita, K. Kakushima, Shinsuke Nabeya, 2011 .

In situ TEM observation of nanobonding formation between silicon MEMS tips

H. Fujita, K. Kakushima, T. Ishida, 2010, Nanotechnology.

TEM observation of tensile deformation of silicon nanowire between micromachined sharp opposing tips

H. Fujita, M. Mita, K. Kakushima, 2005, 18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005..

Electromechanical theory of microelectromechanical devices

R. Amirtharajah, A. Chandrakasan, S. Samukawa, 2014 .

Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films

H. Wakabayashi, K. Kakushima, E. Chang, 2022, Japanese Journal of Applied Physics.

On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films

H. Wakabayashi, K. Kakushima, T. Hoshii, 2021, Japanese Journal of Applied Physics.

Highly Oriented Growth of AlxSc1-X N Ferroelectric Film on W Bottom Electrodes

H. Wakabayashi, K. Kakushima, T. Hoshii, 2020, ECS Meeting Abstracts.

Electrical Characterization of Sputter Deposited AlxSc1-XN Thin Films

H. Wakabayashi, K. Kakushima, T. Hoshii, 2020, ECS Meeting Abstracts.

Sputter-Deposited-MoS2 ${n}$ MISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area Integration

H. Wakabayashi, A. Ogura, K. Kakushima, 2018, IEEE Journal of the Electron Devices Society.

Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization

H. Wakabayashi, A. Ogura, K. Kakushima, 2018, Journal of Electronic Materials.

Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing

H. Wakabayashi, K. Kakushima, T. Tatsumi, 2021, IEEE Journal of the Electron Devices Society.

Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact

H. Wakabayashi, K. Kakushima, T. Hoshii, 2023, IEEE Journal of the Electron Devices Society.

Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness

H. Wakabayashi, A. Ogura, K. Kakushima, 2017 .

Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process

N. Sugii, A. Nishiyama, P. Ahmet, 2012 .

SrO capping effect for La2O3/Ce-silicate gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010, Microelectron. Reliab..

Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs

Sorin Cristoloveanu, Thomas Ernst, Hiroshi Iwai, 2011, Microelectron. Reliab..

A light-in light-out micro mirror device

K. Kakushima, H. Fujita, H. Toshiyoshi, 2005, The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05..

CHALLENGES FOR FUTURE SEMICONDUCTOR MANUFACTURING

Hiroshi Iwai, Kuniyuki Kakushima, Hei Wong, 2006 .

XPS Study of the Bonding Properties of Lanthanum Oxide/Silicon Interface with a Trace Amount of Nitrogen Incorporation

Hiroshi Iwai, Kuniyuki Kakushima, Hei Wong, 2010 .

Reduction of contact resistance on AlGaN/GaN HEMT structures introducing uneven AlGaN layers

W. Saito, H. Wakabayashi, K. Kakushima, 2015 .

X-ray photoelectron spectroscopy study of high-k CeO2/La2O3 stacked dielectrics

H. Iwai, H. Wong, K. Kakushima, 2014 .

Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures

Yuan Taur, Hiroshi Iwai, Aaron Thean, 2014, Microelectron. Reliab..

Electrical Characterization of Atomic Layer Deposited La2O3 Films on In0.53Ga0.47As Substrates

H. Iwai, N. Sugii, A. Nishiyama, 2013 .

Gate Capacitance Modeling and Diameter-Dependent Performance of Nanowire MOSFETs

H. Iwai, K. Kakushima, K. Natori, 2012, IEEE Transactions on Electron Devices.

Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors

Hiroshi Iwai, Kenji Natori, Kuniyuki Kakushima, 2010 .

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010, Microelectron. Reliab..

Physical and electrical properties of ultra-thin nickel silicide Schottky diodes on Si (100)

N. Sugii, H. Iwai, H. Nohira, 2013 .

Si/Ni-Silicide Schottky junctions with atomically flat interfaces using NiSi2 source

K. Kakushima, H. Iwai, K. Ohmori, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration

W. Cao, H. Wakabayashi, A. Ogura, 2019, 2019 19th International Workshop on Junction Technology (IWJT).

Influence of sputtering gas on resistivity of thin Ni silicide films

H. Iwai, N. Sugii, A. Nishiyama, 2015, 2015 China Semiconductor Technology International Conference.

Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2

H. Iwai, P. Ahmet, K. Kakushima, 2008 .

Annealing Reaction for Ni Silicidation of Si Nanowire

Hiroshi Iwai, Nobuyuki Sugii, Kenji Natori, 2009 .

Thermal stability of NiSi controlled by post silicidation metal doping method

H. Iwai, P. Ahmet, K. Kakushima, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

In-Situ TEM Observation of Crystal-Facet-Dependent Self-Rearranging Gold Atoms Under Tensile Stress Controlled by MEMS Nanoprobe Positioner

H. Fujita, H. Toshiyoshi, M. Mita, 2007, TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference.

Effects of aluminum doping on lanthanum oxide gate dielectric films

H. Iwai, H. Wong, P. Ahmet, 2012 .

Fabrication of heavily boron doped mechanical resonators

H. Fujita, H. Kawakatsu, T. Bourouina, 2003, TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664).

Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement

H. Wakabayashi, K. Kakushima, E. Chang, 2021, Japanese Journal of Applied Physics.

Post metallization annealing study in La2O3/Ge MOS structure

H. Iwai, N. Sugii, P. Ahmet, 2009 .

La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode

H. Iwai, N. Sugii, H. Nohira, 2013 .

Reliability characteristics of W-La2O3 structures compared with those of HfO2-based gate oxides

H. Iwai, T. Hattori, N. Sugii, 2008, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits.

Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements

H. Iwai, T. Hattori, H. Nohira, 2008 .

Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2011, Microelectron. Reliab..

ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2021, Japanese Journal of Applied Physics.

Importance of crystallinity improvement in MoS2 film by compound sputtering even followed by post sulfurization

H. Wakabayashi, K. Kakushima, T. Tatsumi, 2021, Japanese Journal of Applied Physics.

High-mobility and low-carrier-density sputtered MoS2 film formed by introducing residual sulfur during low-temperature in 3%-H2 annealing for three-dimensional ICs

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2017 .

Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2007, IEICE Electron. Express.

Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid

K. Kakushima, T. Tatsumi, I. Muneta, 2023, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Exceptional plasticity of silicon nanobridges

H. Fujita, H. Toshiyoshi, D. Collard, 2011, Nanotechnology.

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

Hiroshi Iwai, Kenji Ohmori, Kuniyuki Kakushima, 2011, Microelectron. Reliab..

Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2018 .

Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface

H. Iwai, H. Ohashi, K. Kakushima, 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

Observation of Wake-up Effect on Ferroelectric Y:HfO2 Thickness Scaling

H. Wakabayashi, K. Kakushima, T. Hoshii, 2020 .

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics

H. Iwai, H. Wong, Hao Jin, 2014, Nanoscale Research Letters.

Effects of layer sequence and postdeposition annealing temperature on performance of La2O3 and HfO2 multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application

H. Iwai, K. Kakushima, J. Yao, 2014 .

Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate

H. Wakabayashi, A. Ogura, K. Kakushima, 2018, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).

Electrical Conductivity of Lambda DNA–Pd Wire

Hiroyuki Fujita, Kuniyuki Kakushima, Gen Hashiguchi, 2005, International Symposium on Optomechatronic Technologies.

Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures

H. Iwai, W. Saito, H. Wakabayashi, 2014 .

Elucidation of PVD MoS2 film formation process and its structure focusing on sub-monolayer region

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2021, Japanese Journal of Applied Physics.

Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes With Ideal Interface Characteristics

H. Iwai, H. Wakabayashi, K. Kakushima, 2016, IEEE Electron Device Letters.

On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node

H. Wong, K. Kakushima, 2022, Nanomaterials.

Reliability of La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT

H. Iwai, N. Sugii, A. Nishiyama, 2013 .

Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing

Hiroshi Iwai, Yiming Lei, Kuniyuki Kakushima, 2018, Microelectron. Reliab..

Passivation of SiO2/SiC interface with La2O3 capped oxidation

H. Iwai, S. Yamakawa, N. Sugii, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer

H. Wakabayashi, K. Kakushima, T. Hoshii, 2021 .

Subthreshold Characteristics of MOS Transistors With $ \hbox{CeO}_{2}/\hbox{La}_{2}\hbox{O}_{3}$ Stacked Gate Dielectric

K. Kakushima, Hiroshi Iwai, Hei Wong, 2011, IEEE Electron Device Letters.

Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2016, Microelectron. Reliab..

Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam

A. Uedono, K. Kakushima, T. Yoda, 2023, Journal of Applied Physics.

Interface and electrical properties of La-silicate for direct contact of high-k with silicon

H. Iwai, N. Sugii, K. Tachi, 2010 .

High-performance Si Nanowire FET with a semi gate-around structure suitable for integration

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2009, 2009 Proceedings of the European Solid State Device Research Conference.

Electrical Characterization of $\hbox{Al}_{2} \hbox{O}_{3}$/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments

H. Iwai, G. Brammertz, Y. Lin, 2011, IEEE Electron Device Letters.

Ohmic contact between titanium and sputtered MoS2 films achieved by forming-gas annealing

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2018, Japanese Journal of Applied Physics.

Poole–Frenkel (PF)-MOS: A Proposal for the Ultimate Scale of an MOS Transistor

H. Wong, K. Kakushima, 2023, Nanomaterials.

Quasi-analytical model of ballistic cylindrical surrounding gate nanowire MOSFET

H. Iwai, H. Wong, K. Kakushima, 2015 .

Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration

H. Wakabayashi, A. Ogura, K. Kakushima, 2020, Japanese Journal of Applied Physics.

Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application

H. Iwai, T. Hattori, N. Sugii, 2007 .

Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain

H. Iwai, N. Sugii, A. Nishiyama, 2014 .

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature

K. Kakushima, H. Iwai, T. Hattori, 2012, IEEE Transactions on Electron Devices.

Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure.

H. Iwai, K. Shiraishi, K. Kakushima, 2014, Optics express.

Modeling of the post-breakdown IG-VG-VD characteristics of La2O3-based MOS transistors

H. Iwai, E. Miranda, J. Suñé, 2013, 2013 Spanish Conference on Electron Devices.

Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown

Jordi Suñé, Hiroshi Iwai, Kuniyuki Kakushima, 2012, Microelectron. Reliab..

Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film

H. Iwai, T. Hattori, N. Sugii, 2009 .

Effect of an ultrathin SiO2 interfacial layer on the hysteretic current–voltage characteristics of CeOx-based metal–insulator–metal structures

H. Iwai, E. Miranda, J. Suñé, 2013 .

Reactive sputtering of ferroelectric AlScN films with H2 gas flow for endurance improvement

H. Wakabayashi, K. Kakushima, T. Hoshii, 2024, Japanese Journal of Applied Physics.

Scalable ferroelectricity of 20 nm-thick (Al0.8Sc0.2)N thin films sandwiched between TiN electrodes

H. Funakubo, K. Kakushima, T. Shiraishi, 2023, Journal of Applied Physics.

Lanthanum Oxide for Gate Dielectric Insulator

H. Iwai, T. Hattori, K. Kakushima, 2005, 2005 IEEE Conference on Electron Devices and Solid-State Circuits.