H. E. Dirani

发表

Detailed Investigation of Band Modulation Devices in 14 nm and 28 nm FDSOI Technologies

H. E. Dirani, 2017 .

Properties and mechanisms of Z2-FET at variable temperature

Philippe Ferrari, S. Cristoloveanu, Hassan El Dirani, 2016 .

Feasibility Demonstration of New e-NVM Cells Suitable for Integration at 28 nm

A. Asenov, Y. Taur, B. Cheng, 2022 .

A band-modulation device in advanced FDSOI technology: Sharp switching characteristics

Philippe Ferrari, S. Cristoloveanu, Dominique Golanski, 2016 .

Z2-FET memory for low power applications

Yuan Taur, Cyrille Le Royer, Sorin Cristoloveanu, 2017 .

Insight into carrier lifetime impact on band-modulation devices

Y. Taur, S. Cristoloveanu, M. Parihar, 2017 .

Sharp-switching band-modulation back-gated devices in advanced FDSOI technology

Philippe Ferrari, Hassan El Dirani, Pascal Fonteneau, 2017 .

A review of the Z 2 -FET 1T-DRAM memory: Operation mechanisms and key parameters

Yuan Taur, Yue Xu, J. Lacord, 2017 .