D. Nirmal

D. Nirmal, D. Gracia, A. N. Justeena, 2017, 2017 International Conference on Innovations in Electrical, Electronics, Instrumentation and Media Technology (ICEEIMT).

HIGH PERFORMANCE FLEXIBLE NANOPARTICLES BASED ORGANIC ELECTRONICS

D. Nirmal, 2019, December 2019.

III-V Nanoscale Quantum-Well Field-Effect Transistors for Future High-Performance and Low-Power Logic Applications

D. Nirmal, J. Ajayan, 2020 .

Theoretical Study of TiO2 based UV-VIS Spectrometer Gratings for Assessment of Skin Lesions in Localized Scleroderma

K. P. Pinkymol, S. Chander, D. Nirmal, 2022, Optik.

InGaAs based gratings for UV–VIS spectrometer in prospective mRNA vaccine research

K. P. Pinkymol, D. Nirmal, J. Ajayan, 2022, Optical and Quantum Electronics.

Simulation and Comparison of AlGaN LEDs with Boron Doped GaN Well Using Assorted Aluminium Concentration

D. Nirmal, J. Ajayan, G. Dhivyasri, 2022, 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO).

Fabrication of ultra flexible super capacitor using polyvinylidene fluoride

Pratik P Pandit, D. Nirmal, J. G. Jency, 2017, 2017 International Conference on Innovations in Electrical, Electronics, Instrumentation and Media Technology (ICEEIMT).

Investigation of back barrier material effects on the scalability of Fe-doped recess-gated AlN/GaN HEMTs for next generation RF power electronics

D. Nirmal, J. Ajayan, S. Bhattacharya, 2022, Micro and Nanostructures.

Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier

D. Nirmal, J. Ajayan, Ramkumar Natarajan, 2022, Materials Science and Engineering: B.

On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates

A. Jarndal, D. Nirmal, L. Arivazhagan, 2020, International Journal of RF and Microwave Computer-Aided Engineering.

Investigation of Gd₂O₃/α-Ga₂O₃/Y₂O₃ Based Moshemt for Drain Current Improvement

D. Nirmal, H. John, J. Micheal Snow., 2022, 2022 6th International Conference on Devices, Circuits and Systems (ICDCS).

Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study

D. Nirmal, J. Ajayan, Arathy Varghese, 2021, Materials Science and Engineering: B.

AlGaN/GaN HEMT for highly sensitive detection of Bio-molecules using transconductance method

D. Nirmal, P. Kumar Reddy, S. B. Lakshmi, 2020, IOP Conference Series: Materials Science and Engineering.

Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review

D. Nirmal, J. Ajayan, P. MohanKumar, 2022, Materials Science in Semiconductor Processing.

Design and simulation of Schottky-Source/Drain GaN/AlGaN HEMTs for breakdown voltage improvement

D. Nirmal, P. Prajoon, Abin George, 2014, 2014 International Conference on Electronics and Communication Systems (ICECS).

A wearable energy storage capacitor using graphene oxide and magnesuim oxide as electrodes

D. Nirmal, J. G. Jency, S. Angen, 2020 .

Advances in neuromorphic devices for the hardware implementation of neuromorphic computing systems for future artificial intelligence applications: A critical review

D. Nirmal, J. Ajayan, B. K. Jebalin, 2022, Microelectron. J..

Phosphorene-based intelligent nanosensor for wearable electronics applications

J. Ajayan, D. Nirmal, Adhithan Pon, 2021 .

A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications

D. Nirmal, J. Ajayan, Dheena Kurian, 2021 .

Optical Grating Techniques for MEMS-Based Spectrometer—A Review

D. Nirmal, P. Prajoon, D. Rani, 2021, IEEE Sensors Journal.

Investigation on Simulation-Based Specific Absorption Rate in Ultra-Wideband Antenna for Breast Cancer Detection

D. Nirmal, B. Sundarambal, Suresh Subramanian, 2018, IEEE Sensors Journal.

Numerical modeling of triple material gate stack gate all-around (TMGSGAA) MOSFET considering quantum mechanical effects

D. Nirmal, B. Padmanaban, S. Sathiyamoorthy, 2015 .

Strain-Induced Ionic Polarization Dependent AlGaN/GaN High Electron Mobility Transistor

W. Yeh, D. Nirmal, N. Kumar, 2020, 2020 4th International Conference on Trends in Electronics and Informatics (ICOEI)(48184).

GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review

J. Ajayan, A. S. Augustine Fletcher, B. Santhosh Kumar, 2019, Microelectron. J..

Design and Fabrication of GaAs Based MOSFET by Physical Vapor Deposition Method

D. Nirmal, R. Swaminathan, C. R. A. J. Chelliah, 2018, Materials Focus.

A novel ZnPc nanorod derived piezoelectric nanogenerator for energy harvesting

R. Kannan, N. Mohankumar, D. Nirmal, 2020 .

A survey of Gallium Nitride HEMT for RF and high power applications

D. Nirmal, A. S. Augustine Fletcher, D. Nirmal, 2017 .

Design and Simulation of a T-gated AlGaN/GaN HEMT with Added Mini Field Plate

D. Nirmal, J. Kumar, G. Samuel, 2022, 2022 3rd International Conference on Electronics and Sustainable Communication Systems (ICESC).

A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications

M. Chanda, D. Nirmal, Adrija Mukherjee, 2023, Microelectron. J..

Performance Analysis of HfO2-SiO2 Stacked Oxide Quadruple Gate Tunnel Field Effect Transistor for Improved ON Current

T. S. A. Samuel, P. Vimala, D. Nirmal, 2021, Silicon.

Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study

J. Ajayan, D. Nirmal, A. S. Augustine Fletcher, 2021, Microelectron. J..

Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors

D. Nirmal, J. Ajayan, Arathy Varghese, 2021, Silicon.

Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs

D. Nirmal, J. Ajayan, M. Hasan, 2020 .

Analysis of nanoscale digital circuits using novel drain-gate underlap DMG hetero-dielectric TFET

D. Jackuline Moni, D. Nirmal, D. Gracia, 2022, Microelectron. J..

Performance enhancement of triple material double gate TFET with heterojunction and heterodielectric

A. K. Panda, T. S. A. Samuel, D. Nirmal, 2019, Solid State Electronics Letters.

An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT

D. Nirmal, J. Ajayan, L. Arivazhagan, 2020, Silicon.

Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications

D. Nirmal, J. Ajayan, P. Prajoon, 2019, AEU - International Journal of Electronics and Communications.

The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs

D. Nirmal, N. Mohankumar, A. Shobha Rekh, 2015, Microelectron. J..

A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations

D. Nirmal, J. Ajayan, L. Arivazhagan, 2022, Journal of Electronic Materials.

Luminous power improvement in InGaN V-Shaped Quantum Well LED using CSG on SiC Substrate

D. Nirmal, P. Prajoon, G. Dhivyasri, 2020, IOP Conference Series: Materials Science and Engineering.

Investigation on Impact of GaAs and GaN Blazed Grating for High Performance UV-VIS Spectrometer

D. Nirmal, J. Ajayan, Ajith Ravindran, 2022, 2022 3rd International Conference on Electronics and Sustainable Communication Systems (ICESC).

Organic Electrochemical Transistors (OECTs): Advancements and Exciting Prospects for Future Biosensing Applications

Brajesh Kumar Kaushik, B. Kaushik, D. Nirmal, 2023, IEEE Transactions on Electron Devices.

A New Drain Current Model for a Dual Metal Junctionless Transistor for Enhanced Digital Circuit Performance

D. Nirmal, P. Prajoon, J. Charles Pravin, 2016, IEEE Transactions on Electron Devices.

Investigation of AlGaN/GaN HEMT Breakdown analysis with Source field plate length for High power applications

Arivazhagan L, Godfrey D, D Nirmal, 2020, 2020 5th International Conference on Devices, Circuits and Systems (ICDCS).

Ferroelectric Field Effect Transistors (FeFETs):Advancements, Challenges and Exciting Prospects for Next Generation Non-Volatile Memory (NVM) Applications

D. Nirmal, J. Ajayan, Shubham Tayal, 2023, Materials Today Communications.

Efficiency Enhancement of InGaN MQW LED Using Compositionally Step Graded InGaN Barrier on SiC Substrate

D. Nirmal, P. Prajoon, J. Pravin, 2016, Journal of Display Technology.

Numerical investigation of traps and optical response in III-V nitride quantum LED

D. Nirmal, J. Ajayan, P. Prajoon, 2020, Optical and Quantum Electronics.

Temperature-dependent efficiency droop analysis of InGaN MQW light-emitting diode with modified ABC model

D. Nirmal, P. Prajoon, J. Pravin, 2016, Journal of Computational Electronics.

Handbook for III-V High Electron Mobility Transistor Technologies

D. Nirmal, J. Ajayan, 2019 .

Green InGaN/GaN LEDs with p-GaN interlayer for efficiency droop improvement

D. Nirmal, P. Prajoon, J. Pravin, 2016, 2016 3rd International Conference on Devices, Circuits and Systems (ICDCS).

Investigation of Quantum Confinement Effects on Molybdenum Disulfide (MoS2) Based Transistor Using Ritz Galerkin Finite Element Technique

D. Nirmal, J. Pravin, R. Sridevi, 2021, Silicon.

Enhancement of DC and Breakdown Performance on Single to Multi-Step Gate FP Using GaN-HEMT for High Power Applications

W. Yeh, N. Mohankumar, D. Nirmal, 2020, Silicon.

A comprehensive review of AlGaN/GaNHigh electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications

D. Nirmal, J. Ajayan, J. Kumar, 2023, Microelectronics Journal.

Investigation of Impact of Passivation Materials on the DC/RF Performances of InP-HEMTs for Terahertz Sensing and Imaging

D. Nirmal, J. Ajayan, L. Arivazhagan, 2019, Silicon.

A Comprehensive Investigation of Vertically Stacked Silicon Nanosheet Field Effect Transistors: an Analog/RF Perspective

Ashutosh Nandi, D. Nirmal, B. Jena, 2021, Silicon.

Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

D. Nirmal, J. Ajayan, P. Prajoon, 2016 .

Subthreshold analysis of nanoscale FinFETs for ultra low power application using high-k materials

D. Nirmal, N. Mohankumar, Binola K. Jebalin, 2013 .

22 nm In 0.75 Ga 0.25 As channel-based HEMTs on InP/GaAs substrates for future THz applications

J. Ajayan, D. Nirmal, D. Nirmal, 2017 .

Nanoscale channel engineered double gate MOSFET for mixed signal applications using high‐k dielectric

P. Vijayakumar, D. Nirmal, N. Mohankumar, 2013, Int. J. Circuit Theory Appl..

III–V compound semiconductor transistors–from planar to nanowire structures

D. Nirmal, J. Ajayan, 2019, VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects.

Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate

D. Nirmal, D. Godfrey, L. Arivazhagan, 2021, Microelectron. J..

Performance Analysis of Dual Metal Double Gate Tunnel-FETs for Ultralow Power Applications

D. Nirmal, D. Gracia, 2018 .

As Composite Channel InP HEMT on Silicon Substrate for Future Beyond 5 G and Quantum Computing Applications

D. Nirmal, Ajayan, Tayal, 2022 .

Performance Analysis of Triple Metal Gate Vertical Tunnel FET

D. Nirmal, D. Moni, D. Gracia, 2017 .

LG = 20 nm High Performance GaAs Substrate Based Metamorphic Metal Oxide Semiconductor High Electron Mobility Transistor for Next Generation High Speed Low Power Applications

M. Saravanan, D. Nirmal, J. Ajayan, 2019, Journal of Nanoelectronics and Optoelectronics.

InP-Based High-Electron-Mobility Transistors for High-Frequency Applications

D. Nirmal, J. Ajayan, 2019, Nanoelectronics.

Applicability of double Channel Technique in AlGaN/GaN HEMT for future biosensing applications

A. Jarndal, D. Nirmal, J. Ajayan, 2021, Superlattices and Microstructures.