A. Telia

发表

Analytical modeling and analysis of Alm Ga1−mN/GaN HEMTs employing both field-plate and high-k dielectric stack for high-voltage operation

M. Kaddeche, A. Telia, A. Soltani, 2013 .

Modeling of AlGaN/GaN HEMTs using field-plate technology

A. Soltani, M. Kaddeche, A. Telia, 2009, 2009 3rd International Conference on Signals, Circuits and Systems (SCS).

Effects of spontaneous and piezoelectric polarization on AlInN/GaN heterostructure

M. Kaddeche, A. Telia, A. Soltani, 2012, 2012 International Conference on Engineering and Technology (ICET).

Electrical and optical numerical modeling of DP-PPV based polymer light emitting diode

A. Telia, K. Benatia, 2018, Journal of Microwaves, Optoelectronics and Electromagnetic Applications.

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

N. Bourzgui, A. Ougazzaden, G. Patriarche, 2014 .

Trap characterization in AlGaN/GaN HEMT by analyzing frequency dispersion in capacitance and conductance

A. Telia, A. Soltani, L. Semra, 2010 .

Photoluminescence intensity study of n-InP diodes in the accumulation regime

A. Telia, A. Ahaitouf, A. Bath, 1996 .

Trap Characterization at Different Temperatures in AlGaN/GaN/Si HEMT Structure by the Conductance Method

A. Telia, A. Soltani, Z. Fares, 2009 .

Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies

A. Telia, A. Soltani, A. Bath, 2008 .

Experimental analysis of temperature dependence of deep‐level capture cross‐section properties at the Au oxidized InP interface

A. Telia, B. Lepley, C. Michel, 1991 .

Study of field plate effects onAlGaN/GaN HEMTs

A. Soltani, M. Kaddeche, A. Telia, 2009, 2009 International Conference on Microelectronics - ICM.

The thermal effect on the output conductance in AlGaN/GaN HEMT's

A. Telia, A. Soltani, L. Semra, 2012, 2012 24th International Conference on Microelectronics (ICM).