I. Hamaguchi

Gate oxide integrity on ITOX-SIMOX substrates and influence of test device geometry on characterization

K. Kawamura, H. Deai, H. Sakamoto, 2001 .

Experimental verification of buried-oxide with over-8 MV/cm breakdown fields in low-dose SIMOX wafers

T. Yano, K. Kawamura, I. Hamaguchi, 1997, 1997 IEEE International SOI Conference Proceedings.

Reduced Dislocation Density in Simox Wafer by Multi-Energy Single Implantation

T. Yano, I. Hamaguchi, K. Kajiyama, 1992, 1992 IEEE International SOI Conference.

Technological innovation in low-dose SIMOX wafers fabricated by an internal thermal oxidation (ITOX) process

K. Kawamura, I. Hamaguchi, S. Takayama, 2003 .

Gate oxide integrity on ITOX-SIMOX wafers

H. Deai, H. Sakamoto, T. Yano, 1996, 1996 IEEE International SOI Conference Proceedings.