S. Kumashiro

发表

A Discrete Surface Potential Model Which Accurately Reflects Channel Doping Profile and Its Application to Ultra-Fast Analysis of Random Dopant Fluctuation

Hiroo Masuda, Shigetaka Kumashiro, Hiroshi Arimoto, 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

Validity of mobility universality for scaled metal–oxide–semiconductor field-effect transistors down to 100 nm gate length

Hans Jurgen Mattausch, S. Kumashiro, M. Miura-Mattausch, 2002 .

Impurity-profile-based threshold-voltage model of pocket-implanted MOSFETs for circuit simulation

Hans Jurgen Mattausch, Mitiko Miura-Mattausch, Shigetaka Kumashiro, 2002 .

Oxygen vacancy with large lattice distortion as an origin of leakage currents in SiO/sub 2/

S. Kumashiro, A. Oshiyama, A. Yokozawa, 1997, International Electron Devices Meeting. IEDM Technical Digest.

The design, fabrication, and characterization of a novel electrode structure self-aligned HBT with a cutoff frequency of 45 GHz

S. Kumashiro, K. Honjo, M. Madihian, 1987, IEEE Transactions on Electron Devices.

Circuit-simulation model of gate-drain-capacitance changes in small-size MOSFETs due to high channel-field gradients

S. Kumashiro, M. Miura-Mattausch, K. Yamashita, 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.

Microscopic observation of impurities in TiO2 using radioactive nuclear probes

S. Kumashiro, M. Ogura, T. Sumikama, 2006 .

Title Measurement of the spin and magnetic moment of 2 3

T., T. Suzuki, S. Kumashiro, 2018 .

Measurement of the spin and magnetic moment of ²³Al

S. Kumashiro, A. Ozawa, T. Sumikama, 2006 .

Physical modeling of the reverse-short-channel effect for circuit simulation

Hans Jurgen Mattausch, Mitiko Miura-Mattausch, S. Kumashiro, 2001 .

Simulation of reverse short channel effects with a consistent point-defect diffusion model

M. Hane, H. Sakamoto, S. Kumashiro, 1997, SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.

Semi‐insulating current blocking property simulations for buried heterostructure laser diodes

K. Kasahara, S. Sugou, S. Kumashiro, 1988 .

A highly stable SRAM memory cell with top-gated P-N drain poly-Si TFTs for 1.5 V operation

K. Noda, S. Kumashiro, T. Shimizu, 1996, International Electron Devices Meeting. Technical Digest.

Precise nuclear moments of 13B and the β-ray angular distribution

S. Kumashiro, J. Alonso, Y. Nojiri, 2004 .

HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation

H.J. Mattausch, S. Kumashiro, T. Ohguro, 2006, IEEE Transactions on Electron Devices.

Measurement of the spin and magnetic moment of {sup 23}Al

Kenichi Yoshida, S. Kumashiro, A. Ozawa, 2006 .

Magnetic Moment and Spin of the Extremely Proton-Rich Nucleus 23Al

S. Kumashiro, J. Alonso, K. Yoshida, 2005 .

Polarization of 23Ne, 24m,25Al and 28P produced through single nucleon pickup and charge-exchange reactions at 100 AMeV

T. Suzuki, M. Nagao, S. Kumashiro, 2007 .

Nuclear spin orientation of 12,13B created in heavy ion collisions

S. Kumashiro, J. Alonso, Y. Nojiri, 2004 .

HiSIM-RP: A reverse-profiling based 1st principles compact MOSFET model and its application to variability analysis of 90nm and 40nm CMOS

Hironori Sakamoto, Shigetaka Kumashiro, Shigeo Sato, 2012, Thirteenth International Symposium on Quality Electronic Design (ISQED).

A Systematic and Physically Based Method of Extracting a Unified Parameter Set for a Point-Defect Diffusion Model

H. Sakamoto, S. Kumashiro, H. Matsumoto, 1998 .

A new diffusion algorithm during oxidation which can handle both phosphorus pile-up and boron segregation at Si-SiO/sub 2/ interface

H. Sakamoto, S. Kumashiro, 1997, SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.

Analysis of leakage current in buried heterostructure lasers with semiinsulating blocking layers

S. Kumashiro, Kenichi Kasahara, S. Sugou, 1989 .

HiSIM: a MOSFET model for circuit simulation connecting circuit performance with technology

H.J. Mattausch, S. Kumashiro, M. Miura-Mattausch, 2002, Digest. International Electron Devices Meeting,.

1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation

Kyoji Yamashita, Hans Jürgen Mattausch, Shigetaka Kumashiro, 2005, IEICE Trans. Electron..

Two-dimensional numerical analysis of lasing characteristics for self-aligned structure semiconductor lasers

S. Kumashiro, S. Asada, M. Ueno, 1990 .

Precise physical modeling of the reverse-short-channel effect for circuit simulation

S. Kumashiro, M. Miura-Mattausch, N. Shigyo, 1999, 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387).

Fabrication and modeling of a novel self-Aligned AlGaAs/GaAs heterojunction bipolar transistor with a cutoff frequency of 45 GHz

S. Kumashiro, K. Honjo, M. Madihian, 1986, 1986 International Electron Devices Meeting.

A triangular mesh generation method suitable for the analysis of complex MOS device structures

S. Kumashiro, I. Yokota, S. Kumashiro, 1994, Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V.