H. Tanimoto

An accurate Coulomb mobility model for MOS inversion layer and its application to NO-oxynitride devices

M. Kondo, H. Tanimoto, 2001 .

Monte Carlo Study of Hot Electron Transport in Quantum Wells

K. Taniguchi, N. Yasuda, C. Hamaguchi, 1988 .

Monte Carlo Study of Hot Electron Transport in Quantum Wells

K. Taniguchi, N. Yasuda, C. Hamaguchi, 1988 .

Negative Differential Mobility and Drift Velocity Overshoot in a Single Quantum Well of AlGaAs/GaAs/AlGaAs Heterostructure

C. Hamaguchi, H. Tanimoto, K. Miyatsuji, 1986 .

Electron beam assisted high aspect ratio, submicrometre etching of passivation SiO2 on large-scale integrated circuits

Koji Nakamae, Hiromu Fujioka, H. Fujioka, 1992 .

Fully-depleted FBC (floating body cell) with enlarged signal window and excellent logic process compatibility

Akihiro Nitayama, Takashi Ohsawa, K. Inoh, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Simulation of planar single-gate Si tunnel FET with average subthreshold swing of less than 60 mV/decade for 0.3 V operation

S. Takagi, J. Shimokawa, S. Kawanaka, 2018 .

A new quantum effect model for practical device simulation

Naoyuki Shigyo, H. Tanimoto, H. Tanimoto, 2000 .

Grain-boundary-limited carrier mobility in polycrystalline silicon with negative temperature dependence: modeling carrier conduction through grain-boundary traps based on trap-assisted tunneling

T. Izumida, N. Aoki, S. Onoue, 2019, Japanese Journal of Applied Physics.

Compact and Efficient Monte Carlo Method to Reproduce Size Effect on Resistivity in Sub-0.1μm Metallic Interconnects

N. Aoki, Y. Toyoshima, H. Shibata, 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.