G. G. Díaz

发表

Determination of the dark and illuminated characteristic parameters of a solar cell from I-V characteristics

I. Mártil, G. G. Díaz, 1992 .

Ion Implant Technology for Intermediate Band Solar Cells

M. T. Luque, I. Mártil, G. G. Díaz, 2012 .

Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions

E. Iborra, I. Mártil, G. G. Díaz, 1989 .

Deposition of SiNx:H thin films by the electron cyclotron resonance and its application to Al/SiNx:H/Si structures

I. Mártil, G. G. Díaz, S. Dueñas, 1998 .

Rapid thermal annealing effects on plasma deposited SiOx:H films

I. Mártil, G. G. Díaz, F. López, 2002 .

Improvement of SiNx:H/InP gate structures for the fabrication of metal–insulator–semiconductor field-effect transistors

I. Mártil, G. G. Díaz, P. Fernández, 2002 .

Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP

I. Mártil, G. G. Díaz, E. Andrés, 2003 .

Sputtering of SiO2 in O2Ar atmospheres

E. Iborra, G. G. Díaz, J. Santamaria, 1986 .

Electrical properties of R.F.-sputtered SiO2 films

J. Santamaria, Enrique Iborra, M. Rodríguez Vidal, 1985 .

Two-layer Hall effect model for intermediate band Ti-implanted silicon

G. G. Díaz, Javier Olea Ariza, I. Plaza, 2011 .

Structural, electrical, and optical properties of CuGaSe2 rf sputtered thin films

I. Mártil, G. G. Díaz, J. Santamaria, 1990 .

Good quality Al/SiNx:H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method

I. Mártil, G. G. Díaz, S. Dueñas, 1998 .

The influence of film properties on the electrical characteristics of metal - insulator - semiconductor devices

I. Mártil, G. G. Díaz, Miguel A. Fernandez, 1997 .

Undergraduate laboratory experiment: Measurement of the complex refractive index and the band gap of a thin film semiconductor

I. Mártil, G. G. Díaz, 1992 .