P. Ashburn

发表

A theoretical and experimental study of recombination in silicon p−n junctions

D. Morgan, P. Ashburn, M. Howes, 1975 .

Ultra-fast electronic detection of antimicrobial resistance genes using isothermal amplification and Thin Film Transistor sensors.

P. Ashburn, S. Kalsi, C. Turner, 2017, Biosensors & bioelectronics.

Total dose radiation hardening of MOS transistors by fluorine implantation

P. Ashburn, K. Morgan, Kenneth Potter, 2017, 2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

A 50nm channel vertical MOSFET concept incorporating a retrograde channel and a dielectric pocket

P. Ashburn, S. Hall, C. D. de Groot, 2001, 31st European Solid-State Device Research Conference.

Design of 50-nm vertical MOSFET incorporating a dielectric pocket

P. Ashburn, V.D. Kunz, D. Donaghy, 2004, IEEE Transactions on Electron Devices.

Recent developments in deca-nanometer vertical MOSFETs

Steve Hall, Octavian Buiu, Peter Ashburn, 2004 .

Polysilicon emitters for bipolar transistors: a review and re-evaluation of theory and experiment

I. Post, P. Ashburn, G. Wolstenholme, 1992 .

SiGe Heterojunction Bipolar Transistors

P. Ashburn, 2003 .

Design and realization of bipolar transistors

P. Ashburn, 1988 .

Raised source/drain (RSD) for 50nm MOSFETs - effect of epitaxy layer thickness on short channel effects

A. Waite, S. Deleonibus, T. Ernst, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Noise and Generation/Recombination Noise

P. Ashburn, I. Mitrovic, S. Hall, 2005 .

1/f noise and generation/recombination noise in SiGe HBTs on SOI

P. Ashburn, O. Buiu, N. Lukyanchikova, 2005, IEEE Transactions on Electron Devices.

Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si 1 x Ge x

P. Ashburn, A. Willoughby, J. Bonar, 2005 .

Mechanism of Germanium-Induced Perimeter Crystallization of Amorphous Silicon

P. Ashburn, M. Hakim, 2007 .

Perimeter crystallization of amorphous silicon around a germanium seed

P. Ashburn, I. Matko, B. Chenevier, 2006 .

Lateral crystallization of amorphous silicon by germanium seeding

P. Ashburn, I. Matko, B. Chenevier, 2006 .

Use of a Gate Delay Expression to Compare Self-Aligned Silicon Bipolar and AlGaAs/GaAs Heterojunction Bipolar Technologies

A. Rezazadeh, A. Brunnschweiler, P. Ashburn, 1988, ESSDERC '88: 18th European Solid State Device Research Conference.

Shallow junctions on pillar sidewalls for sub-100-nm vertical MOSFETs

P. Ashburn, O. Buiu, E. Gili, 2006, IEEE Electron Device Letters.

Improved vertical MOSFET performance using an epitaxial channel and a stacked silicon-insulator structure

P. Ashburn, S. Hall, O. Buiu, 2012 .

Self-Aligned Silicidation of Surround Gate Vertical MOSFETs for Low Cost RF Applications

W. Redman-White, P. Ashburn, S. Hall, 2010, IEEE Transactions on Electron Devices.

Improved sub-threshold slope in short-channel vertical MOSFETs using FILOX oxidation

W. Redman-White, P. Ashburn, S. Hall, 2009, ESSDERC 2009.

A technology for building shallow junction MOSFETs on vertical pillar walls

P. Ashburn, S. Hall, O. Buiu, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Three-Mask Polysilicon Thin-Film Transistor Biosensor

Kai Sun, Hywel Morgan, Peter Ashburn, 2014, IEEE Transactions on Electron Devices.

Low cost thin-film transistor nanoribbon sensors fordetection of proteins using a miniature bead-basedenzyme-linked immunosorbent assay (elisa)

P. Ashburn, H. Morgan, Chunxiao Hu, 2015 .

Effect of Phosphate Buffered Saline Solutions on Top-Down Fabricated ZnO Nanowire Field Effect Transistor

H. Chong, P. Ashburn, S. M. Sultan, 2017 .

The influence of BF/sub 2/ and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base

P. Ashburn, N. Lukyanchikova, N. Garbar, 2001 .

Two dimensional simulation of transient enhanced boron out-diffusion from the base of a SiGe HBT due to an extrinsic base implant

P. Ashburn, M. Hashim, R. Lever, 1997, Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting.

SiGe HBTs on bonded SOI incorporating buried silicide layers

P. Ashburn, S. Hall, O. Buiu, 2005, IEEE Transactions on Electron Devices.

Improved control of polysilicon emitter interfacial oxide using a UHV-compatible LPCVD cluster tool

P. Ashburn, C. Marsh, A.I. Abdul-Rahim, 1997, IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat..

Comparison of experimental and theoretical results on polysilicon emitter bipolar transistors

P. Ashburn, P. Ashburn, B. Soerowirdjo, 1984, IEEE Transactions on Electron Devices.

The Effects of Scaling and Rapid Thermal Annealing on the I/f Noise of Polysilicon Emitter Bipolar Transistors

W. Redman-White, P. Ashburn, H. Kemhadjian, 1991, ESSDERC '91: 21st European Solid State Device Research Conference.

Study of thin oxide tunnel parameters for polysilicon emitters, using computer simulation and experimental results

D. Roulston, P. Ashburn, G. Booker, 1990 .

Self-aligned transistors with polysilicon emitters for bipolar VLSI

P. Ashburn, A. Cuthbertson, 1985 .

TEM AND RBS STUDIES OF THE REGROWTH OF ARSENIC IMPLANTED POLYSILICON DUE TO AN OXIDATION DRIVE-IN

P. Ward, P. Ashburn, M. Wilson, 1982 .

Effects of surface treatments on the electrical characteristics of bipolar transistors with polysilicon emitters

P. Ashburn, B. Soerowirdjo, 1983 .

Modeling of TED of boron in the underlying silicon layer due to boron implantation

A. Aziz, S. Sabki, P. Ashburn, 2002, ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575).

2D simulation of the effects of transient enhanced boron out-diffusion from base of SiGe HBT due to an extrinsic base implant

P. Ashburn, M. Hashim, R. Lever, 1999 .

Effect of lightly doped drain on the electrical characteristics of CMOS compatible vertical MOSFETs

P. Ashburn, S. Hall, K. Sun, 2015, 2015 International Conference on Advances in Electrical Engineering (ICAEE).

On the mechanism of carbon nanotube formation: the role of the catalyst

P. Ashburn, A. Hector, C. D. de Groot, 2011, Journal of physics. Condensed matter : an Institute of Physics journal.

Chemical Vapour Deposition of CNTs Using Structural Nanoparticle Catalysts

P. Ashburn, A. Hector, T. Uchino, 2010 .

AC and Phase Sensing of Nanowires for Biosensing

E. Sangiorgi, M. Tartagni, P. Ashburn, 2016, Biosensors.

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

H. Chong, P. Ashburn, N. Ditshego, 2014, Nanoscale Research Letters.

Total Ionizing Dose and random dopant fluctuation effects in 65-nm gate length partially depleted Silicon-on-Insulator nMOSFETs

W. Redman-White, P. Ashburn, K. Morgan, 2015, 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO).

Reduction of noise in polysilicon emitter bipolar transistors

W. Redman-White, P. Ashburn, H. Kemhadjian, 1995 .

Behavior and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers

N. E. Moiseiwitsch, P. Ashburn, G. Booker, 2000 .

Improved base current ideality in polysilicon emitter bipolar transistors due to fast fluorine diffusion through oxide

P. Ashburn, J. Schiz, 1999 .

Modeling and characterization of noise of polysilicon emitter bipolar transistors

I. Post, W. Redman-White, P. Ashburn, 1990, Proceedings on Bipolar Circuits and Technology Meeting.

Effect of subthreshold slope on the sensitivity of nanoribbon sensors

P. Ashburn, I. Zeimpekis, K. Sun, 2015, Nanotechnology.

Silicon-Germanium: Properties, Growth and Applications

D. Bagnall, P. Ashburn, Y. Haddara, 2017 .

Enhancement of resistivity of Czochralski silicon by deep level manganese doping

Kanad Mallik, P. Ashburn, C. H. Groot, 2006 .

Hybrid system for complex AC sensing of nanowires

E. Sangiorgi, M. Tartagni, P. Ashburn, 2014, 2014 15th International Conference on Ultimate Integration on Silicon (ULIS).

Fabrication of ZnO nanowire device using top-down approach

H. Chong, P. Ashburn, K. Sun, 2011, Ulis 2011 Ultimate Integration on Silicon.

Electrical and materials characterization of GSMBE grown Si1−x−yGexCy layers for heterojunction bipolar transistor applications

P. Ashburn, I. Mitrovic, S. Hall, 2004 .

Hysteresis behaviour of top-down fabricated ZnO nanowire transistors

H. Chong, R. Ismail, P. Ashburn, 2013, RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics.

Predicted propagation delay of Si/SiGe heterojunction bipolar ECL circuits

Z. A. Shafi, P. Ashburn, G. Parker, 1990 .

Low-Cost Nanoribbon Sensors for Protein Analysis in Human Serum Using a Miniature Bead-Based Enzyme-Linked Immunosorbent Assay.

Kai Sun, Hywel Morgan, Peter Ashburn, 2016, Analytical chemistry.

The use of the electron‐beam‐induced current mode of the SEM for observing emitter/collector pipes in bipolar transistors

P. Ashburn, J. Beale, C. Bull, 1979 .

Effects of dislocations in silicon transistors with implanted emitters

P Ashburn, K. H. Nicholas, P. Ashburn, 1977 .

Investigation of boron diffusion in polysilicon and its application to the design of p-n-p polysilicon emitter bipolar transistors with shallow emitter junctions

Peter Ashburn, I. Post, P. Ashburn, 1991 .

An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observations

Peter Ashburn, G. R. Booker, P. Ashburn, 1987 .

The role of radiation damage on the current-voltage characteristics of p-n junctions

D. Morgan, P. Ashburn, 1974 .

Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation

P. Ashburn, P. Hemment, M. Mitchell, 2002 .

Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance

Steve Hall, Peter Ashburn, E. Gili, 2004 .

The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors

P. Ashburn, C. D. de Groot, T. Uchino, 2021, Nanomaterials.

Bipolar transistor action from an amorphous carbon/silicon heterojunction emitter

Z. A. Shafi, G. Amaratunga, P. Ashburn, 1993 .

A study of diffused bipolar transistors by electron microscopy

J. P. Gowers, P. Ashburn, C. Bull, 1980 .

Catalyst free low temperature direct growth of carbon nanotubes

M. Kiziroglou, P. Ashburn, S. Wang, 2005, 5th IEEE Conference on Nanotechnology, 2005..

Reduced boron diffusion under interstitial injection in fluorine implanted silicon

Peter Ashburn, P. Ashburn, I. Matko, 2007 .

Fluorine-vacancy complexes in Si-SiGe-Si structures

P. Ashburn, H. Mubarek, D. Abdulmalik, 2007 .

Fluorine –Vacancy Engineering: A Viable Solution for Dopant Diffusion Suppression in SOI Substrates

P. Ashburn, H. Mubarek, 2007 .

FOR DOPANT DIFFUSION SUPPRESSION IN SOI SUBSTRATES

P. Ashburn, Huda Abdel, Wahab El Mubarek, 2007 .

Effect of fluorine on boron thermal diffusion in the presence of point defects

P. Ashburn, M. Kham, J. Bonar, 2005 .

Study of fluorine behavior in silicon by selective point defect injection

P. Ashburn, M. Kham, J. Bonar, 2005 .

Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si/sub 1-x/Ge/sub x/

P. Ashburn, Y. Wang, P.L.F. Hemment, 2005, IEEE Transactions on Electron Devices.

Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation

P. Ashburn, J. Bonar, Y. Wang, 2005 .

Effect of fluorine implantation dose on boron thermal diffusion in silicon

Peter Ashburn, Jing Zhang, Y. Wang, 2004 .

Reduction of boron thermal diffusion in silicon by high energy fluorine implantation

P. Ashburn, H. Mubarek, 2003 .

Influence of H2 Preconditioning on the Nucleation and Growth of Self-Assembled Germanium Islands on Silicon (001)

D. Bagnall, E. Mendoza, P. McNally, 2004 .

GSMBE growth and structural characterisation of SiGeC layers for HBT

P. Fewster, P. Ashburn, I. Mitrovic, 2005 .

The small signal admittance of carbon implanted p-n diodes

D. Morgan, P. Ashburn, M. Howes, 1975 .

Carbon nanotubes in a photonic metamaterial.

Peter Ashburn, Francesco De Angelis, Enzo Di Fabrizio, 2009, Physical review letters.

Activation energy for fluorine transport in amorphous silicon

P. Ashburn, G. Nash, G. Booker, 1999 .

Observations of dislocations and junction irregularities in bipolar transistors using the E.B.I.C. mode of the scanning electron microscope

P. Ashburn, C. Bull, 1979 .

A propagation-delay expression and its application to the optimization of polysilicon emitter ECL processes

A. Brunnschweiler, P. Ashburn, Eng Fong Chor, 1988 .

Integrated Injection Logic

Peter Ashburn, S. P. Wainwright, Steve Hall, 1999 .

Thin film polycrystalline silicon nanowire biosensors.

Kai Sun, Hywel Morgan, Peter Ashburn, 2012, Nano letters.

Measurement and modelling of the emitter resistance of polysilicon emitter transistors

P. Ashburn, G. Wolstenholme, G. Booker, 1988, Proceedings of the 1988 Bipolar Circuits and Technology Meeting,.

Low-cost top-down zinc oxide nanowire sensors through a highly transferable ion beam etching for healthcare applications

H. Chong, P. Ashburn, H. Morgan, 2016 .

Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts

P. Ashburn, G. Booker, C. Marsh, 2001 .

Increased current gain and reduced emitter resistance in F-implanted, low thermal budget polysilicon emitters for SiGe HBTs

N. E. Moiseiwitsch, P. Ashburn, G. Booker, 1996, Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.

The benefits of fluorine in pnp polysilicon emitter bipolar transistors

N. E. Moiseiwitsch, P. Ashburn, 1994 .

The use of an interface anneal to control the base current and emitter resistance of p-n-p polysilicon emitter bipolar transistors

I. Post, P. Ashburn, 1992, IEEE Electron Device Letters.

Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors

L. Castañer, P. Ashburn, G. Wolstenholme, 1991, IEEE Electron Device Letters.

Comparison of experimental and computed results on arsenic- and phosphorus-doped polysilicon emitter bipolar transistors

D. Roulston, P. Ashburn, C. Selvakumar, 1987, IEEE Transactions on Electron Devices.

Emitter resistance of arsenic- and phosphorus-doped polysilicon emitter transistors

A. Brunnschweiler, P. Ashburn, A. Brunnschweiler, 1985, IEEE Electron Device Letters.

Epitaxial regrowth of n+ and p+ polycrystalline silicon layers given single and double diffusions

P. Ashburn, J. Williams, 1992 .

Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes

P. Ashburn, T. Uchino, C. H. Groot, 2013 .

Epitaxial regrowth of n+ polycrystalline silicon at 850 °C, induced by fluorine implantation

N. E. Moiseiwitsch, P. Ashburn, G. Booker, 1995 .

Properties and Benefits of Fluorine in Silicon and Silicon-Germanium Devices

P. Ashburn, H. Mubarek, 2007 .

TEM structural studies of polysilicon emitter bipolar materials and devices: increased interfacial oxide break-up and polysilicon regrowth and decreased emitter resistance by fluorine implantation

N. E. Moiseiwitsch, P. Ashburn, G. Booker, 1998 .

Effects of fluorine in silicon solar cells with polysilicon contacts

L. Castañer, P. Ashburn, S. Silvestre, 1998 .

Series resistance in polysilicon contacted solar cells

R. Alcubilla, T. Markvart, L. Castañer, 1994, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).

Top-down fabricated ZnO nanowire transistors for application in biosensors

Kai Sun, Maurits R. R. de Planque, Peter Ashburn, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications

H. Chong, P. Ashburn, K. Sun, 2012 .

Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD

P. Ashburn, H. Chong, P. Ashburn, 2012, IEEE Electron Device Letters.

Metal-catalyst-free growth of carbon nanotubes and their application in field-effect transistors

P. Ashburn, T. Uchino, C. H. Groot, 2011 .

Deep level dopant compensated Czochralski silicon substrates for MMICs

Kanad Mallik, P. Ashburn, K. Groot, 2010 .

Metal-Catalyst-Free Growth of Silica Nanowires and Carbon Nanotubes Using Ge Nanostructures

P. Ashburn, T. Uchino, J. Hutchison, 2011 .