B. Lim

发表

Hot spots in multicrystalline silicon solar cells: avalanche breakdown due to etch pits

Otwin Breitenstein, Andriy Lotnyk, Bianca Lim, 2009 .

Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon

K. Bothe, D. Macdonald, B. Lim, 2009 .

Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon

D. Macdonald, A. Cuevas, B. Lim, 2009 .

Accelerated deactivation of the boron?oxygen-related recombination centre in crystalline silicon

K. Bothe, B. Lim, J. Schmidt, 2011 .

Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

D. Macdonald, A. Cuevas, B. Lim, 2011 .

Lifetimes exceeding 1 ms in 1-Ω cm boron-doped Cz-silicon

Karsten Bothe, V. V. Voronkov, Robert J. Falster, 2014 .

Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon

K. Bothe, D. Macdonald, B. Lim, 2010 .

Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon

Karsten Bothe, Robert J. Falster, Bianca Lim, 2011 .

The impact of dopant compensation on the boron–oxygen defect in p‐ and n‐type crystalline silicon

Andres Cuevas, Bianca Lim, D. Macdonald, 2011 .

(Invited) Boron-Oxygen Related Lifetime Degradation in p-type and n-type Silicon

B. Lim, Jan Schmidt, V. Voronkov, 2013 .

Recombination Activity and Impact of the Boron–Oxygen-Related Defect in Compensated N-Type Silicon

D. Macdonald, A. Cuevas, B. Lim, 2011, IEEE Journal of Photovoltaics.

Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon

K. Bothe, B. Lim, Jean M. Schmidt, 2014 .

Deactivation of the boron–oxygen recombination center in silicon by illumination at elevated temperature

Karsten Bothe, Bianca Lim, K. Bothe, 2008 .

Impact of oxygen on the permanent deactivation of boron–oxygen-related recombination centers in crystalline silicon

K. Bothe, B. Lim, Jan Schmidt, 2010 .

Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon

A. P. Knights, Andres Cuevas, Fiacre E. Rougieux, 2010 .

Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime

Adrienne L. Blum, K. Bothe, R. Sinton, 2013, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).

Efficiency Potential of P-Type Al2O3/SiN $_{x}$ Passivated PERC Solar Cells With Locally Laser-Doped Rear Contacts

M. Ernst, B. Lim, D. Walter, 2016, IEEE Journal of Photovoltaics.

Femtosecond laser ablation of dielectric layers for high-efficiency silicon wafer solar cells

Jaffar Moideen Yacob Ali, A. Aberle, T. Mueller, 2018 .

Electron and Hole Mobility Reduction and Hall Factor in Phosphorus-Compensated p-Type Silicon

A. Knights, D. Macdonald, A. Cuevas, 2010 .

Loss Analysis of n-Type Passivated Emitter Rear Totally Diffused Back-Junction Silicon Solar Cells with Efficiencies up to 21.2%

B. Lim, R. Brendel, T. Dullweber, 2016, IEEE Journal of Photovoltaics.

A. Shalav, D. Macdonald, A. Cuevas, 2012 .

Permanent Deactivation of the Boron-Oxygen Recombination Center in Silicon Solar Cells

K. Bothe, B. Lim, R. Brendel, 2008 .

Permanent recovery of electron lifetime in pre-annealed silicon samples: A model based on Ostwald ripening

B. Lim, Jean M. Schmidt, V. Voronkov, 2012 .

PECVD BSG Diffusion Sources for Simplified High-Efficiency N-PERT BJ and BJBC Solar Cells

Thorsten Dullweber, Pietro P. Altermatt, Bianca Lim, 2016, IEEE Journal of Photovoltaics.

21.0%‐efficient co‐diffused screen printed n‐type silicon solar cell with rear‐side boron emitter

B. Lim, R. Brendel, Jan Schmidt, 2016 .

Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

E. Bugiel, B. Lim, R. Brendel, 2014 .

21.0%-efficient screen-printed n-PERT back-junction silicon solar cell with plasma-deposited boron diffusion source

B. Lim, R. Brendel, Jan Schmidt, 2016 .

Simulation-based roadmap for the integration of poly-silicon on oxide contacts into screen-printed crystalline silicon solar cells

B. Lim, R. Brendel, T. Dullweber, 2021, Scientific reports.

21% efficient screen-printed n-type silicon wafer solar cells with implanted phosphorus front surface field

A. Khanna, T. Mueller, B. Lim, 2018, Solar Energy Materials and Solar Cells.

Printable liquid silicon for local doping of solar cells

B. Lim, R. Brendel, T. Dullweber, 2017, Solar Energy Materials and Solar Cells.

Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells

Robby Peibst, Rolf Brendel, Tobias Ohrdes, 2015, IEEE Journal of Photovoltaics.

A Simple Model Describing the Symmetric $I\hbox{--}V$ Characteristics of $\hbox{p}$ Polycrystalline Si/ $\hbox{n}$ Monocrystalline Si, and $\hbox{n}$ Polycrystalline Si/ $\hbox{p}$ Monocrystalline Si Junctions

B. Lim, R. Brendel, K. Hofmann, 2014 .

Boron-Doped PECVD Silicon Oxides as Diffusion Sources for Simplified High-Efficiency Solar Cell Fabrication

P. Altermatt, B. Lim, H. Wagner, 2013 .

Determination of the Contact Resistivity of Screen-printed Al Contacts Formed by Laser Contact Opening

Christopher Kranz, Ulrike Baumann, Thorsten Dullweber, 2015 .

For none, one, or two polarities—How do POLO junctions fit best into industrial Si solar cells?

B. Lim, R. Brendel, R. Niepelt, 2019, Progress in Photovoltaics: Research and Applications.

Light-induced Lifetime Degradation in Boron-doped Czochralski Silicon: Are Oxygen Dimers Involved?

K. Bothe, B. Lim, V. Voronkov, 2013 .

Carrier mobilities in multicrystalline silicon wafers made from UMG-Si

B. Lim, Jan Schmidt, M. Wolf, 2011 .

Thorsten Dullweber, Sebastian Gatz, Karsten Bothe, 2013, 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2.

Understanding Lifetime Degradation in Czochralski-Grown N-Type Silicon after High-Temperature Processing

B. Lim, Jean M. Schmidt, R. Falster, 2013 .

Realistic efficiency potential of next‐generation industrial Czochralski‐grown silicon solar cells after deactivation of the boron–oxygen‐related defect center

B. Lim, Jan Schmidt, D. Walter, 2016 .

n-PERT Back Junction Solar Cells: an Option for the Next Industrial Technology Generation?

B. Lim, T. Dullweber, M. Berger, 2014 .

Interlaboratory Study of Eddy-Current Measurement of Excess-Carrier Recombination Lifetime

Adrienne L. Blum, K. Bothe, R. Sinton, 2013, IEEE Journal of Photovoltaics.

Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions

B. Lim, R. Brendel, H. Schulte‐Huxel, 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).