B. Jogai

发表

Tunneling between localized states in GaAs/AlGaAs resonant tunneling diodes with spacer layers

C. Huang, C. Bozada, B. Jogai, 1991 .

Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN

D. C. Reynolds, H. Morkoç, D. Look, 1997 .

Magneto‐Hall characterization of delta‐doped pseudomorphic high electron mobility transistor structures

C. E. Stutz, T. Rogers, D. Look, 1994 .

Polariton and Free-Exciton-Like Photoluminescence in ZnO

D. C. Reynolds, D. Look, B. Jogai, 2001 .

Optical properties of ZnO crystals containing internal strains

D. C. Reynolds, D. Look, R. L. Jones, 1999 .

Source of the yellow luminescence band in GaN grown by gas-source molecular beam epitaxy and the green luminescence band in single crystal ZnO

D. C. Reynolds, D. Look, R. L. Jones, 1998 .

InAs/In x Ga1- x Sb Type II Strained Layer Superlattices for Long Wavelength Infrared Detection Applications

J. Loehr, B. Jogai, D. Talwar, 1994 .

Energy levels in polarization superlattices: a comparison of continuum strain models

E. Pan, B. Jogai, J. Albrecht, 2003, cond-mat/0311040.

Electromechanical coupling in free-standing AlGaN/GaN planar structures

E. Pan, B. Jogai, J. Albrecht, 2003, cond-mat/0306323.

Multiple negative differential resistance due to spacer layer effects in AlGaAs/GaAs resonant tunneling diode

C. Huang, B. Jogai, E. Koenig, 1991 .

Effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors

E. Pan, B. Jogai, J. Albrecht, 2003, cond-mat/0306297.

Shallow Acceptors in GaAs Grown from the Vapour Phase

D. C. Reynolds, G. L. McCoy, D. Look, 1997 .

Influence of the cap layer on the Gibbs free energy above a layer of buried InGaAs islands

B. Jogai, 2002 .

Photoluminescence measurements from the two polar faces of ZnO

D. C. Reynolds, D. Look, B. Jogai, 2000 .

Temperature dependence of photoluminescence linewidth in modulation‐doped pseudomorphic high electron mobility transistor AlxGa1−xAs/InyGa1−yAs/GaAs structures

T. Rogers, J. Ballingall, B. Jogai, 1994 .

Longitudinal Excitons in GaN

D. C. Reynolds, B. Jogai, T. Collins, 2002 .

SELF-CONSISTENT K.P BAND STRUCTURE CALCULATION FOR ALGAAS/INGAAS PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS

B. Jogai, 1994 .

Free electron distribution in δ‐doped InGaAs/AlGaAs pseudomorphic high electron mobility transistor structures

B. Jogai, D. Streit, P. W. Yu, 1994 .

Optical absorption of the intersubband transitions in GaAs/Al0.4Ga0.6As multiple quantum wells with superlattice barriers

D. C. Reynolds, M. O. Manasreh, C. E. Stutz, 1993 .

Resonant coupling of orbital angular momentum components in the barrier with analogous components in the well in InxGa1−xAs‐GaAs quantum wells

D. C. Reynolds, C. E. Stutz, K. Evans, 1994 .

Optically pumped ultraviolet lasing from ZnO

D. C. Reynolds, David C. Look, D. Look, 1996 .

Three-dimensional strain field calculations in multiple InN/AlN wurtzite quantum dots

B. Jogai, 2001 .

Neutral-Donor-Bound-Exciton Complexes in ZnO Crystals

D. C. Reynolds, David C. Look, Cole W. Litton, 1998 .

Three-dimensional strain field calculations in coupled InAs/GaAs quantum dots

B. Jogai, 2000 .

Evidence for Shallow Acceptors in GaN

D. C. Reynolds, D. Look, R. Molnar, 2001 .

Identification of an ionized-donor-bound-exciton transition in GaN

D. C. Reynolds, V. M. Phanse, D. Look, 1997 .

High valence‐band offset of GaSbAs‐InAlAs quantum wells grown by molecular beam epitaxy

D. C. Reynolds, C. E. Stutz, B. Jogai, 1992 .

Combined effects of screening and band gap renormalization on the energy of optical transitions in ZnO and GaN

D. C. Reynolds, D. Look, B. Jogai, 2000 .

Screening of Excitons in GaN Crystals

D. C. Reynolds, D. Look, R. Molnar, 1998 .

Optical properties of quantum wire superlattices

D. C. Reynolds, B. Jogai, 1992 .

Electrochemical Capacitance-Voltage Analysis of Delta-Doped Pseudomorphic High-Electron-Mobility Transistor Material

C. E. Stutz, T. Rogers, D. Look, 1994 .

Photoluminescence study of symmetric, coupled, double InxGa1-xAs-GaAs quantum well structures

D. C. Reynolds, C. E. Stutz, K. Evans, 1993 .

Effect of many‐body corrections on intersubband optical transitions in GaAs–AlxGa1−x As multiple quantum wells

B. Jogai, 1991 .

Charge transfer limitations in δ‐doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors

B. Jogai, 1995 .

Valence-Band Ordering in ZnO

D. C. Reynolds, D. Look, B. Jogai, 1999 .

Complex dielectric function of AlGaN/GaN/InGaN heterojunction structures

B. Jogai, 2004 .

Absorption coefficient of wurtzite GaN calculated from an empirical tight binding model

B. Jogai, 2000 .

Diamagnetic shifts of excitons associated with symmetric and antisymmetric wave functions in coupled InxGa1−xAs‐GaAs quantum wells

D. C. Reynolds, C. E. Stutz, D. Look, 1994 .

Valence‐band offset in strained GaAs‐InxGa1−xAs superlattices

B. Jogai, 1991 .

Fine structure on the green band in ZnO

D. C. Reynolds, D. Look, B. Jogai, 2001 .

Free electron distribution in AlGaN/GaN heterojunction field-effect transistors

B. Jogai, 2002 .

Identification of the G 5 and G 6 free excitons in GaN

D. C. Reynolds, D. Look, A. Saxler, 2000 .

Frequency adaptable maser source

B. Jogai, C. Devlin, A. Ferendeci, 2015, 2015 National Aerospace and Electronics Conference (NAECON).

Effective masses of wurtzite GaN calculated from an empirical tight binding model

B. Jogai, 1998 .

Effect of radial growth rate variation on resonant tunneling diode current-Voltage characteristics

D. C. Reynolds, C. E. Stutz, C. Huang, 1991 .

Charge‐quantization effects on current‐voltage characteristics of AlGaAs/GaAs resonant tunneling diodes with spacer layers

C. Huang, M. Paulus, C. Bozada, 1990 .

Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors

Ravindra P. Joshi, Viswanadham Sridhara, B. Jogai, 2003 .

Parasitic hole channels in AlGaN/GaN heterojunction structures

B. Jogai, 2002 .

Effects of a low-doped spacer layer in the emitter of a resonant tunneling diode

C. E. Stutz, C. Huang, K. Evans, 1990 .

Time-resolved photoluminescence lifetime measurements of the Γ5 and Γ6 free excitons in ZnO

D. C. Reynolds, Michael J. Callahan, David C. Look, 2000 .

Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors

B. Jogai, B. Jogai, 2003 .

Phonon replicas associated with donor–bound–excitons in GaN

D. C. Reynolds, D. Look, R. Molnar, 1998 .

Novel type II strained layer superlattices for long wavelength infrared detectors

John P. Loehr, J. Loehr, B. Jogai, 1998 .

Frequency and power limit of quantum well oscillators

Kang L. Wang, B. Jogai, K. W. Brown, 1986 .

Characteristics of Exciton-polaritons in Zno- Based Hybrid Microcavities

H. Morkoç, P. Lagoudakis, F. Laussy, 2022 .

Emitter structure influence on the electron transport mechanism in resonant tunneling diodes

C. E. Stutz, K. Evans, B. Jogai, 1991, [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.