N. Jin

Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions

Santosh K. Kurinec, Paul R. Berger, Niu Jin, 2003 .

Phosphorus diffusion in Si-based resonant interband tunneling diodes and tri-state logic using vertically stacked diodes

P. R. Berger, S. Rommel, P. Thompson, 2005 .

Analysis of the Voltage Swing for Logic and Memory Applications in Si/SiGe Resonant Interband Tunnel Diodes Grown by Molecular Beam Epitaxy

P. R. Berger, P. Thompson, N. Jin, 2007, IEEE Transactions on Nanotechnology.

Si-based Resonant Interband Tunnel Diode with Cutoff Frequency over 20 GHz and Estimated Peak Current Density of 218 kA/cm/sup 2'/

P. R. Berger, P. Thompson, N. Jin, 2005, 2005 International Semiconductor Device Research Symposium.

Strain-Engineered Si/SiGe Resonant Interband Tunneling Diodes Grown on $\hbox{Si}_{0.8}\hbox{Ge}_{0.2}$ Virtual Substrates With Strained Si Cladding Layers

P. R. Berger, P. Thompson, N. Jin, 2008, IEEE Electron Device Letters.

Observation of strain in pseudomorphic Si1−xGex by tracking phonon participation in Si∕SiGe resonant interband tunnel diodes via electron tunneling spectroscopy

Paul R. Berger, R. Anisha, P. Thompson, 2009 .

Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy

Paul R. Berger, P. Thompson, N. Jin, 2004 .

Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy

Paul R. Berger, P. Thompson, N. Jin, 2003 .

Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies

I. Adesida, Guang Chen, N. Jin, 2006, 2006 International Electron Devices Meeting.

Process development for the realization of thermally-reliable enhancement-mode InAlAs/InGaAs/InP HEMTs with excellent DC and RF performance

I. Adesida, Guang Chen, N. Jin, 2006, 2006 64th Device Research Conference.

Integration of silicon-based tunnel diodes with CMOS: an RIT-OSU-NRL-NSF effort

Niu Jin, P.R. Berger, S.K. Kurinec, 2001, Proceedings of the Fourteenth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.01CH37197).