D. Simons

发表

Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions

Santosh K. Kurinec, Paul R. Berger, Niu Jin, 2003 .

PN junction formation in 6HSiC by acceptor implantation into n-type substrate

M. V. Rao, O. W. Holland, P. Chi, 1995 .

Secondary Ion Mass Spectrometry SIMS V

A. Benninghoven, R. Colton, D. Simons, 1986 .

Characterization of SiGe Films for Use as a National Institute of Standards and Technology Microanalysis Reference Material (RM 8905)

Lee L Yu, D. Meier, D. Newbury, 2009, Microscopy and Microanalysis.

Uranium Ion Yields from Monodisperse Uranium Oxide Particles.

J. D. Fassett, D. Simons, N. Sharp, 2016, Journal of vacuum science and technology. B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena : JVST B.

Detection and quantification of isotopic ratio inhomogeneity

Kevin J. Coakley, K. Coakley, D. Simons, 1998 .

Laser microprobe mass spectrometry: Description and selected applications

D. Simons, 1988 .

On compensation and impurities in state-of-the-art GaN epilayers grown on sapphire

A. Wickenden, P. Chi, D. Simons, 1995 .

Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment

P. Chi, D. Simons, F. Stevie, 1988 .

Evaluation of the local thermal equilibrium model for quantitative secondary ion mass spectrometric analysis

D. Simons, C. A. Evans, J. E. Baker, 1976 .

Frequentist coverage properties of uncertainty intervals for weak Poisson signals in the presence of background

K. Coakley, D. Simons, J. Splett, 2008, 0804.4032.

Calibration of a stopping power model for silicon based on analysis of neutron depth profiling and secondary ion mass spectrometry measurements

G. P. Lamaze, H. Chen-Mayer, K. Coakley, 2002 .

Diffusion of ion implanted boron in preamorphized silicon

R. Elliman, P. Chi, D. Simons, 1996 .

Instrumental Neutron Activation Analysis for Certification of Ion-Implanted Arsenic in Silicon

D. Simons, R. Lindstrom, R. Greenberg, 2000 .

Effects of sample geometry on interelement quantitation in laser microprobe mass spectrometry

D. Simons, I. Musselman, R. W. Linton, 1992 .

Transition metal implants in In0.53Ga0.47As

M. V. Rao, P. Chi, D. Simons, 1991 .

Laser desorption mass spectrometry of squaric acid and its salts

D. Simons, E. White, G. Byrd, 1986 .

Fe and Ti implants in In0.52Al0.48As

M. V. Rao, C. Caneau, P. Chi, 1993 .

Isotopic analysis with the laser microprobe mass analyzer

D. Simons, 1983 .

Laser Microprobe Mass Spectrometry

D. Simons, 1984 .

Silicon cross doping and its effect on the Si or Be implantation doping of gallium arsenide grown on (100) silicon by metalorganic chemical vapor deposition

P. Chi, D. Simons, B. Molnar, 1992 .

The effect of dose rate on interstitial release from the end-of-range implant damage region in silicon

P. Chi, D. Simons, M. Law, 1997 .

MeV energy Fe and Co implants to obtain buried high resistance layers and to compensate donor implant tails in InP

M. V. Rao, O. W. Holland, P. Chi, 1993 .

Co, Fe, and Ti Implants in InGaAs and Co Implants in InP at 200° C

M. V. Rao, O. W. Holland, C. Caneau, 1992 .

CCQM Pilot Study P-140; Quantitative Surface Analysis of Multi-Element Alloy Films | NIST

D. Simons, K. Kim, W. Osborn, 2015 .

Fe implantation in In0.53Ga0.47As/InP

M. V. Rao, P. M. Amirtharaj, J. Kuo, 1989 .

Mass spectrometry of solvated ions generated directly from the liquid phase by electrohydrodynamic ionization

B. Stimpson, D. Simons, C. A. Evans, 1978 .

Electrohydrodynamic ionization mass spectrometry - the ionization of liquid glycerol and non-volatile organic solutes

D. Simons, C. A. Evans, B. N. Colby, 1974 .

High precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry

J. M. Mckinley, P. Chi, D. Simons, 2002 .

Detection of Weak Poisson Signals in the Presence of Background

K. Coakley, D. Simons, J. Splett, 2008 .

Measurement of uranium-236 in particles by secondary ion mass spectrometry.

J. D. Fassett, D. Simons, 2017, Journal of analytical atomic spectrometry.

Cluster ion formation under laser bombardment. Studies of recombination using isotope labeling

D. Simons, I. Musselman, R. W. Linton, 1988 .

Kinetics of silicon nitride crystallization in N + -implanted silicon

A. Datye, D. R. Myers, D. L. Kendall, 1989 .

Simultaneous measurement of the anomalous heat capacity and resistivity of chromium near TN

M. Salamon, D. Simons, P. Garnier, 1969 .

Characterization of sample heterogeneity in secondary ion mass spectrometry by the use of a sampling constant model

D. Bright, D. Simons, F. Adams, 1991 .

A compact, ultra-high vacuum ion source for isotopically enriching and depositing 28Si thin films.

D. Simons, H. Kim, J. Pomeroy, 2019, The Review of scientific instruments.

Quantitative depth profiling of an alternating Pt/Co multilayer and a Pt-Co alloy multilayer by SIMS using a buckminsterfullerene (C60) source

G. Gillen, D. Simons, K. Kim, 2007 .

Direct laboratory determination of the 187Re half-life

D. Simons, M. Lindner, G. Russ, 1986, Nature.

Specific Heat and Resistivity Near the Order-Disorder Transition in β-Brass

M. Salamon, D. Simons, 1971 .

Advances in age-dating of individual uranium particles by large geometry secondary ion mass spectrometry.

J. D. Fassett, D. Simons, A. Fahey, 2019, The Analyst.

Development of certified reference materials of ion-implanted dopants in silicon for calibration of secondary ion mass spectrometers

R. G. Downing, S. B. Schiller, G. P. Lamaze, 2007 .

Round-robin study of arsenic implant dose measurement in silicon by SIMS

K. J. Kim, P. Ronsheim, D. Simons, 2006 .

Determination of uranium and thorium concentrations in soils : comparison of isotope dilution-secondary ion mass spectrometry and isotope dilution-thermal ionization mass spectrometry

W. R. Kelly, J. D. Fassett, D. Simons, 1992 .

Molecular ion imaging and dynamic secondary ion mass spectrometry of organic compounds.

G. Gillen, D. Simons, P. Williams, 1990, Analytical chemistry.

0. 4--3. 0-MeV-range Be-ion implantations into InP:Fe

M. V. Rao, P. Chi, D. Simons, 1991 .

Round‐robin test for the measurement of layer thickness of multilayer films by secondary ion mass spectrometry depth profiling

D. Simons, C. Magee, K. Kim, 2017 .

Development of B‐doped Si multiple delta‐layer reference materials for SIMS profiling

K. J. Kim, P. Chi, D. Simons, 2005 .

Incorporation of Zn in GaAs during organometallic vapor phase epitaxy growth compared to equilibrium

C. Y. Chen, P. Chi, D. Simons, 1995 .

Effect of Fermi Level Pinning at the Surface During OMVPE Growth

C. Y. Chen, R. M. Cohen, P. Chi, 1995 .

Dependence of interface widths on ion bombardment conditions in secondary ion mass spectrometric analysis of a nickel/chromium multilayer structure

D. Simons, F. Adams, M. Moens, 1987 .

Summary of ISO/TC 201 standard: XIII, ISO 18114:2003—surface chemical analysis—secondary ion mass spectrometry—determination of relative sensitivity factors from ion‐implanted reference materials

D. Simons, 2006 .

Quantitative surface analysis of FeNi alloy films by XPS, AES and SIMS

K. J. Kim, C. J. Park, G. Gillen, 2007 .

Diode structures from amorphous low-temperature GaAs

D. Simons, M. Twigg, B. Tadayon, 1993 .

Enriching 28Si beyond 99.9998 % for semiconductor quantum computing

D. Simons, J. Lau, K. Steffens, 2014 .

Fermi energy pinning at the surface during growth of n- and p-type GaAs

P. Chi, D. Simons, R. M. Cohen, 1997 .

Interdiffusion in GaAs bipolar structures

R. M. Cohen, D. Simons, W. Li, 1996, 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings.

Indium diffusion in n-type gallium arsenide

P. Chi, D. Simons, R. M. Cohen, 1997 .

Are the Models of the Triply Charged Gallium Vacancy and Doubly Charged Gallium Interstitial Alive or Dead

C. Y. Chen, R. M. Cohen, P. Chi, 1995 .

Atomic hydrogen for the formation of abrupt Sb doping profiles in MBE-grown Si

P. Thompson, D. Simons, M. Twigg, 1998 .

Semi-quantitative ion microprobe mass analyses of mineral-rich particles from the upper freeport coal

F. T. Dulong, E. Steel, D. Simons, 1984 .

Use of quantum effects as potential qualifying metrics for “quantum grade silicon”

C. Richter, D. Simons, Hyun-Soo Kim, 2019 .

The growth and characterization of Si1 − xGex multiple quantum wells on Si(110) and Si(111)

T. L. Kreifels, P. Thompson, K. Hobart, 1995 .

Doping of gallium nitride using disilane

J. Freitas, L. Rowland, A. Wickenden, 1995 .

Evidence for a Second Magnetic Phase Transition in Godolinium

M. Salamon, D. Simons, 1973 .

Scaling behavior of the specific heat of Gd near Tc

M. Salamon, D. Simons, Cheng-Cher Huang, 1977 .

Specific heat and resistivity of gadolinium near the Curie point in external magnetic fields

M. Salamon, D. Simons, 1974 .

The Role of Standards in Secondary Ion Mass Spectrometry

D. Newbury, D. Simons, 1984 .

A particulate isotopic standard of uranium and plutonium in an aluminosilicate matrix

D. Simons, J. Stoffel, J. Briant, 1994, Journal of the American Society for Mass Spectrometry.

Single particle standards for isotopic measurements of uranium by secondary ion mass spectrometry

D. Simons, 1986 .

Unintentional Indium Incorporation in GaAs Grown by Molecular-Beam Epitaxy

B. E. Hammons, J. Klem, D. R. Myers, 1990 .

Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

Paul R. Berger, T. Dillon, A. Seabaugh, 1999 .

Low‐temperature cleaning processes for Si molecular beam epitaxy

D. J. Godbey, Phillip E. Thompson, Karl D. Hobart, 1993 .

Surface segregation and structure of Sb-doped Si(100) films grown at low temperature by molecular beam epitaxy

P. Thompson, K. Hobart, D. Simons, 1995 .

Boron incorporation with and without atomic hydrogen during the growth of doped layers on Si(100)

P. Thompson, D. Simons, G. Jernigan, 1998 .

Effect of Ge on the segregation of B in Si(100) and Si(110)

P. Thompson, K. Hobart, D. Simons, 1997 .

Sb surface segregation and doping in Si(100) grown at reduced temperature by molecular beam epitaxy

P. Thompson, K. Hobart, D. Simons, 1993 .

The Formation of Abrupt N+ Doping Profiles Using Atomic Hydrogen and Sb During Si MBE

P. Thompson, D. Simons, M. Twigg, 1998 .

Enhanced Zn diffusion in GaAs pnpn structures: Growth versus annealing

C. Y. Chen, R. M. Cohen, P. Chi, 1995 .

Range statistics and Rutherford backscattering studies on Fe‐implanted In0.53Ga0.47As

M. V. Rao, O. W. Holland, C. Caneau, 1991 .

Towards reproducible scanning capacitance microscope image interpretation

J. Marchiando, D. Simons, Q. Chau, 2004 .

Controlled p‐ and n‐type doping of homo‐ and heteroepitaxially grown InSb

P. Chi, D. Simons, Mingchao Yang, 1993 .

Low Temperature p- and n- Type Doping of InSb Grown on GaAs Using Molecular Beam Epitaxy.

P. Thompson, D. Simons, J. L. Davis, 1990 .

Transient enhanced diffusion without {311} defects in low energy B+‐implanted silicon

P. Chi, D. Simons, L. H. Zhang, 1995 .

Targeted enrichment of 28Si thin films for quantum computing

D. Simons, H. Kim, J. Pomeroy, 2020, Journal of physics communications.

99.996 % 12C films isotopically enriched and deposited in situ

D. Simons, J. Pomeroy, K. Dwyer, 2013 .

Al and B ion‐implantations in 6H‐ and 3C‐SiC

M. V. Rao, O. W. Holland, M. Ghezzo, 1995 .

The Royal Society of C uranium-236 in particles by secondary ion mass spectrometry

D. Simons, John D. Fassettb, 2017 .

Phosphorus doping of silicon at substrate temperatures above 600 °C

B. Jonker, P. Thompson, P. Chi, 2010 .

Secondary ion mass spectrometry measurements of isotopic ratios: correction for time varying count rate

A. Leifer, K. Coakley, D. Simons, 2005 .

Ion implantation into (x11)A-oriented InP and GaAs (x <= 4)

M. V. Rao, P. Klein, P. Chi, 1994 .

Repeatability of Si concentration measurements in Si-doped GaN films

A. Wickenden, P. Chi, D. Simons, 1997 .

Elevated temperature nitrogen implants in 6H-SiC

M. V. Rao, J. M. Andrews, O. W. Holland, 1996 .

Improved Uranium Particle Analysis by SIMS using O3 - Primary Ions.

D. Simons, E. Groopman, T. Williamson, 2022, Journal of analytical atomic spectrometry.

Temperature dependent 29Si incorporation during deposition of highly enriched 28Si films.

D. Simons, H. Kim, J. Pomeroy, 2017, Physical review materials.

Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon

P. Chi, D. Simons, M. Law, 1999 .

Final report on VAMAS round‐robin study to evaluate a correction method for saturation effects in DSIMS

D. Simons, C. Magee, J. Bennett, 2015 .

VAMAS round‐robin study to evaluate a correction method for saturation effects in D‐SIMS

D. Simons, C. Magee, J. Bennett, 2014 .

''p-on-n'' Si interband tunnel diode grown by molecular beam epitaxy

Thomas E. Dillon, Paul R. Berger, Sean L. Rommel, 2001 .

Review of secondary ion mass spectrometry characterization of contamination associated with ion implantation

R. Wilson, D. Simons, P. Zalm, 1994 .

High-energy Si implantation into InP:Fe

M. V. Rao, P. Chi, D. Simons, 1991 .