G. Janssen

A novel 3-D integrated HFET/RTD frequency multiplier

U. Auer, M. Agethen, G. Janssen, 1996 .

InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transport

W. Prost, F. Tegude, P. Velling, 1998 .

Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodes

K. Goser, W. Prost, F. Tegude, 2000, Int. J. Circuit Theory Appl..

X-ray characterization of stacked InP/(InGa)As:C HBT and InP/(InGa)As HEMT layer sequences grown by LP-MOVPE using non-gaseous sources

P. Velling, M. Agethen, G. Janssen, 2003 .

A novel 3-D integrated RTD-HFET frequency multiplier

U. Auer, W. Prost, M. Agethen, 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

Development of a low-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for 20 Gb/s optoelectronic receivers

F. Tegude, G. Janssen, R. Reuter, 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

On the applicability of the transimpedance amplifier concept for 40 Gb/s optoelectronic receivers based on InAlAs/InGaAs heterostructure field effect transistors

F. Tegude, G. Janssen, R. Reuter, 1995, Proceedings of ISSE'95 - International Symposium on Signals, Systems and Electronics.