M. Lannoo

Y. Niquet, M. Lannoo, C. Delerue, 2003, Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences.

CHAPTER 4 – Deep and Shallow Impurities in Semiconductors: Theoretical

M. Lannoo, 1992 .

General Methods for Calculating the Electronic Structure of Surfaces

M. Lannoo, P. Friedel, 1991 .

Quantum Confined Systems

M. Lannoo, C. Delerue, 2004 .

Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect Transistors

M. Luisier, D. Logoteta, M. Lannoo, 2019, Materials.

Atomic Configuration of Point Defects

M. Lannoo, J. Bourgoin, 1981 .

Nanostructures: Theory and Modelling

Christophe Delerue, M. Lannoo, C. Delerue, 2004 .

The method of moments for the U center in alkali halides

L. Dobrzynski, M. Lannoo, 1972 .

Highly mismatched heteroepitaxy: 2D platelets assisted nucleation of self-assembled 3D quantum dots

M. Lannoo, C. Priester, 1996 .

Defect Migration and Diffusion

M. Lannoo, J. Bourgoin, 1981 .

Trends in the cohesive properties of sp bonded elements

M. Lannoo, G. Allan, 1983 .

Theory of radiative and nonradiative transitions for semiconductor nanocrystals

M. Lannoo, C. Delerue, G. Allan, 1996 .

Nanoscale device modeling using a conserving analytic continuation technique

H. Mera, M. Lannoo, M. Bescond, 2013 .

Local field effects on the static dielectric constant of crystalline semiconductors or insulators

M. Lannoo, 1977 .

GW investigation of interface-induced correlation effects on transport properties in realistic nanoscale structures

M. Lannoo, M. Bescond, Changsheng Li, 2009 .

Approximate analytic forms for the frequencies of localized vibrational states

M. Lannoo, D. Lagersie, 1974 .

Inelastic quantum transport in single dopant nanowire transistors

H. Carrillo-Nuñez, M. Lannoo, M. Bescond, 2014, 2014 Silicon Nanoelectronics Workshop (SNW).

Antiferromagnetism in the π bonded chain model of the Si ( III) - (2×1) surface

M. Lannoo, G. Allan, 1983 .

Binding energies of hydrogenic impurities in finite-quantum-well structures with effective-mass mismatch: Simple and accurate variational treatments

G. Bastard, M. Lannoo, G. Allan, 1984 .

Validity of the effective-mass approximation for shallow impurity states in narrow superlattices

M. Lannoo, G. Allan, C. Priester, 1983 .

The theory of impurity states in semiconductors

M. Lannoo, 1992 .

Resonant impurity states in quantum-well structures

M. Lannoo, G. Allan, C. Priester, 1984 .

As antisite incorporation in epitaxial growth of GaAs

J. Nagle, M. Stellmacher, M. Lannoo, 1999 .

Wannier excitons in GaAs-Ga1−xAlxAsquantum-well structures: Influence of the effective-mass mismatch

M. Lannoo, G. Allan, C. Priester, 1984 .

An easy method to determine carrier‐capture cross sections: Application to GaAs

M. Lannoo, D. Stiévenard, J. Bourgoin, 1984 .

Lithium insertion in three-dimensional tin sulfides

M. Lannoo, J. Jumas, M. Moubtassim, 1997 .

Concept of dielectric constant for nanosized systems

Christophe Delerue, M. Lannoo, C. Delerue, 2003 .

A tight binding analysis of the step-dependent density of 〈111〉 surface states for covalent semiconductors

M. Lannoo, D. Lohez, 1977 .

Bonds and band structure in Ge x Se 1-x compounds

M. Lannoo, M. Bensoussan, 1977 .

Quantum treatment of phonon scattering for modeling of three-dimensional atomistic transport

M. Luisier, D. Logoteta, M. Lannoo, 2017 .

Atomic and electronic structure of surfaces : theoretical foundations

M. Lannoo, P. Friedel, 1991 .

Strained Layer Epitaxy: The Role of a Capping Layer and mechanism of Strain Compensation in Multilayers Systems

M. Lannoo, G. Allan, C. Priester, 1993 .

Surface and interface states of (111) faces of semiconductors

B. Djafari-Rouhani, L. Dobrzynski, M. Lannoo, 1978 .

Generalization of the Green's-functions formalism to nonorthogonal orbitals: Application to amorphous SiO 2

M. Lannoo, D. Lohez, 1983 .

Study of the neutral vacancy in semi-conductors

M. Lannoo, P. Lenglart, 1969 .

Green's-function calculation of the lattice response near the vacancy in silicon

M. Lannoo, G. Allan, 1982 .

Evidence for correlation effects in the hyperfine structure of the negative vacancy in silicon

M. Lannoo, 1983 .

Physically based Diagonal Treatment of the Self-Energy of Polar Optical Phonons: Performance Assessment of III-V Double-Gate Transistors

D. Logoteta, M. Lannoo, M. Bescond, 2018, Physical Review Applied.

Tight-binding calculations of Ge-nanowire bandstructures

M. Lannoo, M. Bescond, N. Cavassilas, 2007 .

Electric-Field-Induced Phonon-Assisted Tunnel Ionization from Deep Levels in Semiconductors

S. Makram-Ebeid, M. Lannoo, 1982 .

Theoretical discussion of deep level optical and thermal spectroscopy in semiconductors: application to E1 and E2 in GaAs

S. Loualiche, M. Lannoo, A. Nouailhat, 1984 .

Transient capacitance spectroscopy in heavily compensated semiconductors

M. Lannoo, D. Stiévenard, J. Bourgoin, 1985 .

Carrier Emission and Recombination

M. Lannoo, J. Bourgoin, 1983 .

Influence of barrier height on scanning tunneling spectroscopy experimental and theoretical aspects

M. Lannoo, C. Delerue, B. Grandidier, 1998 .

Dangling bond surfaces states in (111) faces of zinc-blende compounds

B. Djafari-Rouhani, L. Dobrzynski, M. Lannoo, 1978 .

A calculation of the intrinsic {111} surface states of the zinc blende ANB8−N compounds

M. Lannoo, P. Masri, 1975 .

Influence of the minority carriers on the transverse acoustoelectric voltage

M. Lannoo, J. Pouliquen, P. Lippens, 1990 .

A critical look at EL2 models

M. Lannoo, J. Bourgoin, 1988 .

Defect-assisted tunneling current: A revised interpretation of scanning tunneling spectroscopy measurements

M. Stellmacher, M. Lannoo, C. Delerue, 2000 .

Jahn-Teller Effect for a Single Vacancy in Diamondlike Covalent Solids

M. Lannoo, J. Friedel, G. Leman, 1967 .

A calculation of defect gap states on the clean (110) surfaces of some III-V semiconductors

M. Lannoo, D. Lohez, L. Lassabatère, 1980 .

Strained Layer Growth: how do 3d Islands Relax Strains?

M. Lannoo, G. Allan, C. Priester, 1993 .

Atomic-scale modeling of source-to-drain tunneling in ultimate Schottky barrier double-gate MOSFETs

J. Autran, D. Munteanu, M. Lannoo, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Thermionic cooling devices based on resonant-tunneling AlGaAs/GaAs heterostructure

D. Logoteta, M. Lannoo, M. Bescond, 2018, Journal of physics. Condensed matter : an Institute of Physics journal.

Electronic states of the neutral vacancy in the diamond like solids

M. Lannoo, P. Lenglart, D. Rouhani, 1971 .

The method of moments for semi-conductors and localized states

M. Lannoo, P. Lenglart, 1971 .

Optical band gap of Si nanoclusters

M. Lannoo, C. Delerue, G. Allan, 1998 .

QUANTUM CONFINEMENT IN AMORPHOUS SILICON LAYERS

M. Lannoo, C. Delerue, G. Allan, 1997 .

Electronic Structure of Amorphous Silicon

M. Lannoo, C. Delerue, G. Allan, 1997 .

Comparative Theoretical Study of Amorphous and Crystalline Silicon Clusters

M. Lannoo, C. Delerue, G. Allan, 1996 .

Anomalous bonding in SiO2 at the SiO2–Si interface

F. Himpsel, M. Lannoo, G. Hollinger, 1987 .

Effective-mass approach for n-type semiconductor nanowire MOSFETs arbitrarily oriented

Nicolas Cavassilas, Marc Bescond, M. Lannoo, 2007 .

Influence of band-structure on electron ballistic transport in silicon nanowire MOSFET's: an atomistic study

D. Munteanu, N. Cavassilas, J. Autran, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Interactions between bombardment‐induced defects in GaAs

S. Makram-Ebeid, M. Lannoo, P. Boher, 1987 .

Method for tight-binding parametrization: Application to silicon nanostructures

Y. Niquet, M. Lannoo, C. Delerue, 2000 .

First-order dielectric susceptibilities of tetrahedrally coordinated semiconductors

M. Lannoo, J. Decarpigny, 1976 .

STM observations of self-assembled 1D and 2D nanoclusters of aromatic cryptand molecules deposited on highly oriented pyrolytic graphite

L. Markey, M. Lannoo, D. Stiévenard, 1997 .

The electronic properties of charged dislocations in semiconductors

M. Lannoo, H. Veth, 1984 .

DEEP LEVEL OPTICAL SPECTROSCOPY OF THE LEVELS INTRODUCED BY TRANSITION

M. Lannoo, A. Nouailhat, F. Litty, 1983 .

A 1 -T 2 splitting for substitutional nitrogen in diamond

M. Lannoo, 1982 .

Growth aspects of quantum dots

M. Lannoo, C. Priester, 1997 .

The Theory of Rare-Earth Impurities in Semiconductors

M. Lannoo, C. Delerue, 1993 .

Theory of Transition Metal Impurities in Semiconductors

M. Lannoo, C. Delerue, 1989 .

Virtual charge method for electrostatic calculations in metallic tip and semiconducting sample systems

M. Lannoo, C. Delerue, X. Broise, 1997 .

Theoretical treatments of DX and EL2

M. Lannoo, 1991 .

Magnetic state around cation vacancies in II-VI semiconductors.

R. Hayn, M. Lannoo, I. Opahle, 2008, Physical review letters.

Theoretical descriptions of porous silicon

M. Lannoo, C. Delerue, G. Allan, 1995 .

Band effects and the dipole interaction between two adatoms on a metal surface

M. Lannoo, G. Allan, 1978 .

3D quantum modeling and simulation of multiple-gate nanowire MOSFETs

D. Munteanu, N. Cavassilas, J. Autran, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

A new mechanism for the 2 × 1 reconstruction of the silicon 〈111〉 surface

M. Lannoo, G. Allan, 1977 .

New method for calculating Hartree-Fock energy-band structures in solids using a linear combination of atomic orbitals basis: Application to diamond

A. Mauger, M. Lannoo, 1977 .

Chapter 7 Theory of Radiative and Nonradiative Processes in Silicon Nanocrystallites

M. Lannoo, C. Delerue, G. Allan, 1997 .

Theory of silicon crystallites. Part II

M. Lannoo, C. Delerue, G. Allan, 1995 .

Theory of the Physical Properties of Si Nanocrystals

M. Lannoo, C. Delerue, G. Allan, 1994 .

Deep Level Behaviour in Superlattice

M. Lannoo, J. Bourgoin, 1988 .

Interpretation and theory of tunneling experiments on single nanostructures

Y. Niquet, M. Lannoo, C. Delerue, 2002 .

Transient capacitance spectroscopy in heavily compensated materials

M. Lannoo, D. Stiévenard, J. Bourgoin, 1985 .

Admittance spectroscopy measurements on AlInAs/GaInAs/AlInAs quantum well structures: Evidence of a deep level assisted tunneling

G. Guillot, X. Letartre, M. Lannoo, 1993, 1993 (5th) International Conference on Indium Phosphide and Related Materials.

Influence of the interface-induced electron self-energy on the subthreshold characteristics of silicon gate-all-around nanowire transistors

M. Lannoo, M. Bescond, Changsheng Li, 2010 .

Theoretical aspects of the luminescence of porous silicon.

Allan, M. Lannoo, C. Delerue, 1993, Physical review. B, Condensed matter.

Tunnel deep level transient spectroscopy on a single quantum well

X. Letartre, M. Lannoo, D. Stiévenard, 1991 .

Origin of self-assembled quantum dots in highly mismatched heteroepitaxy.

M. Lannoo, C. Priester, Lannoo, 1995, Physical review letters.

Electron-phonon coupling and superconductivity in alkali-intercalated C60 solid.

M. Schlüter, Needels, D. Tománek, 1992, Physical review letters.

About the existence of an antiferromagnetic ground state for the (1 x 1) structure of Si(111)

M. Lannoo, G. Allan, 1982 .

Electronic States at Covalent Semiconductor Surfaces

M. Lannoo, P. Friedel, 1991 .

Steps on III V(110) faces: A theoretical investigation

M. Lannoo, D. Lohez, 1979 .

The role of dangling bonds in the properties of surfaces and interfaces of semiconductors

M. Lannoo, 1990 .

Theory of the luminescence of porous silicon

M. Lannoo, C. Delerue, G. Allan, 1993 .

Calculations of the electron-energy-loss spectra of silicon nanostructures and porous silicon

M. Lannoo, C. Delerue, G. Allan, 1997 .

Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs

A. Asenov, N. Cavassilas, L. Raymond, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Transition Metal Surfaces

M. Lannoo, P. Friedel, 1991 .

Empirical Tight-Binding Applied to Silicon Nanoclusters

M. Lannoo, C. Delerue, G. Allan, 1997 .

Screening Near Semiconductor Heterojunctions and Valence Band Offsets

M. Lannoo, G. Allan, C. Priester, 1989 .

Electronic properties of grain boundaries in semiconductors

M. Lannoo, J. Bourgoin, A. Mauger, 1987 .

An Application of First-Order Perturbation Theory to Metal Surfaces

M. Lannoo, J. Muscat, 1976 .

Theory Of Silicon Nanocrystals

M. Lannoo, C. Delerue, G. Allan, 2003 .

Towards a full microscopic approach to the modeling of transistors with nanometer dimensions

J. Autran, M. Lannoo, M. Bescond, 2003 .

Nature of luminescent surface states of semiconductor nanocrystallites.

Allan, M. Lannoo, C. Delerue, 1996, Physical review letters.

Accuracy of zero‐charge and zero‐dipole approximations for the determination of valence‐band offsets at semiconductor heterojunctions

M. Lannoo, G. Allan, C. Priester, 1988 .

Size and temperature dependence of the electron-phonon scattering by donors in nanowire transistors

H. Carrillo-Nuñez, M. Lannoo, M. Bescond, 2016 .

Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions

M. Lannoo, M. Bescond, S. Berrada, 2015 .

Inelastic scattering in nanoscale devices: One-shot current-conserving lowest-order approximation

H. Mera, M. Lannoo, M. Bescond, 2012 .