J. Kolodzey

发表

Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes

Gerhard Klimeck, Thomas E. Dillon, Paul R. Berger, 1998 .

Cyclic deep reactive ion etching with mask replenishment

D. Prather, S. Ray, T. Adam, 2007 .

Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films

S. Wagner, K. Shepard, J. Kolodzey, 1987 .

Sensitivity of a vanadium oxide uncooled microbolometer array for terahertz imaging

Toomas H. Allik, James Kolodzey, Matthew Coppinger, 2011 .

Magnetic tunnel junction-based on-chip microwave phase and spectrum analyzer

Huaiwu Zhang, R. Simons, J. Kolodzey, 2014, Intelligent Memory Systems.

Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy

James Kolodzey, Thomas N. Adam, Sangcheol Kim, 2013 .

Infrared dielectric response, index of refraction, and absorption of germanium-tin alloys with tin contents up to 27% deposited by molecular beam epitaxy

J. Kolodzey, S. Zollner, Dominic Imbrenda, 2018, Applied Physics Letters.

Properties of pseudomorphic and relaxed germanium1−xtinx alloys (x < 0.185) grown by MBE

J. Kolodzey, S. Zollner, R. Hickey, 2017 .

Thermal Stability of Annealed Germanium-Tin Alloys Grown by Molecular Beam Epitaxy

J. Kolodzey, N. Faleev, L. Wielunski, 2017, Journal of Electronic Materials.

Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

A. Reznicek, Yi-Chiau Huang, T. Adam, 2016 .

Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy.

J. Kolodzey, Sangcheol Kim, Nupur Bhargava, 2014, Optics express.

Carbon incorporation in Si1−yCy alloys grown by molecular beam epitaxy using a single silicon–graphite source

D. Hits, M. Dashiell, J. Kolodzey, 1998 .

Heterostructures of pseudomorphic Ge1−yCy and Ge1−x−ySixCy alloys grown on Ge (001) substrates

V. Yam, M. Dashiell, J. Kolodzey, 2000 .

Femtosecond Spectroscopy of Hot Carriers in Germanium

S. Wagner, P. Fauchet, J. Kolodzey, 1986 .

Structural, optical and electronic properties of oxidized AIN thin films at different temperatures

J. Suehle, M. Dashiell, J. Kolodzey, 1998 .

Deep-level spectroscopy studies of confinement levels in SiGe quantum wells

E. P. Neustroev, S. Ray, J. Kolodzey, 2009 .

Asymmetric degradation of electron and hole μτ-products in a-Si:H/a-SiC:H multilayers under illumination

J. Kolodzey, T. Muschik, T. Fischer, 1991 .

Terahertz electroluminescence from boron-doped silicon devices

S. Ray, T. Adam, J. Kolodzey, 2003 .

Electroluminescence at 7 terahertz from phosphorus donors in silicon

T. Adam, J. Kolodzey, Sangcheol Kim, 2004 .

Terahertz emission from electrically pumped gallium doped silicon devices

K. Goossen, S. Ray, J. Kolodzey, 2004 .

The effects of uniaxial compressive stress on the terahertz emission from phosphorus-doped silicon devices

J. Kolodzey, P. Lv, M. Odnoblyudov, 2005 .

Precipitation of β-SiC in Si1−yCy alloys

M. Dashiell, J. Kolodzey, L. Kulik, 1998 .

Optoelectronic Properties of Amorphous SiGec Alloys

J. Kolodzey, J. Krajewski, M. Barteau, 1992 .

The electrical effects of DNA as the gate electrode of MOS transistors

J. Rabolt, M. Dashiell, J. Kolodzey, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

Effect of in-situ annealing on the structural and optical properties of GeSn films grown by MBE

Xiaoyi Wang, Dainan Zhang, Yulong Liao, 2016 .

Pseudomorphic SiC alloys formed by Ge ion implantation

M. Skowronski, M. Dashiell, J. Kolodzey, 2004 .

Electronic Transport and the Density of States Distribution in a-(Si, Ge):H, F Alloys

S. Wagner, J. Kolodzey, V. Chu, 1986 .

Electrical and optical properties of phosphorus doped Ge1−yCy

Paul R. Berger, B. Orner, R. Wilson, 1998 .

Current–Voltage Characteristics of GeSn/Ge Heterojunction Diodes Grown by Molecular Beam Epitaxy

J. Kolodzey, Sangcheol Kim, Nupur Bhargava, 2013, IEEE Electron Device Letters.

SUBSTITUTIONAL GE IN 3C-SIC

J. Kolodzey, C. Guedj, 1999 .

Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing

Kun Qian, J. Kolodzey, Cheng Li, 2022, Journal of Alloys and Compounds.

Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures

E. G. Chirkova, S. Ray, J. Kolodzey, 2003 .

CRAY-1 Computer Technology

James Kolodzey, J. Kolodzey, 1981 .

Fluorine Incorporation and Annealing Properties of a-Si, Ge:H, F Alloys Studied by Elastic Proton Scattering and Ir Absorption

S. Wagner, J. Kolodzey, D. Slobodin, 1986 .

Electron and Hole Transport Perpendicular to the Planes of a-Si:H/ a-Si, Ge:H Compositional Superlattices

S. Wagner, J. Kolodzey, S. Lyon, 1986 .

ALLOYS OF AMORPHOUS HYDROGENATED SILICON

S. Wagner, J. Kolodzey, S. Aljishi, 1986 .

1.3 μm photoresponsivity in Si-based Ge1−xCx photodiodes

Paul R. Berger, B. Orner, S. Rommel, 1998 .

Simultaneous depth profiling of constituents and impurities by elastic proton scattering in amorphous hydrogenated silicon films

S. Wagner, R. Kouzes, J. Kolodzey, 1987 .

Interdiffusion in amorphous Si/SiC multilayers

J. Kolodzey, T. Fischer, H. Göbel, 1992 .

Thermal Stability of a-Si:H/a-SiC:H Superlattices Studied by Hydrogen Effusion, X-ray Diffraction, IR Spectroscopy and Photoluminescence

J. Kolodzey, T. Muschik, T. Fischer, 1991 .

Steady state and transient transport in a-Si, Ge : H, F alloys

J. Kolodzey, V. Chu, J. Conde, 1987 .

Recombination and Electronic Transport in Low-Gap a-Si,Ge:H,F Alloys

S. Wagner, J. Kolodzey, V. Chu, 1987 .

Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates

L. Ram-Mohan, K. Goossen, H. Hier, 2015 .

Growth and infrared/terahertz range photoelectric properties of GeSn/p-Si substrate photodiode

Dainan Zhang, Yulong Liao, J. Kolodzey, 2016, 2016 IEEE International Nanoelectronics Conference (INEC).

The effects of composition and doping on the response of GeC-Si photodiodes

F. Julien, B. Orner, R. Wilson, 1998 .

Hot hole redistribution in impurity states of boron-doped silicon terahertz emitters

T. Adam, J. Kolodzey, P. Lv, 2005 .

The Emission of Terahertz Radiation from Doped Silicon Devices

S. Ray, J. Kolodzey, Sangcheol Kim, 2004 .

Structural and light-emission properties of bulk Germanium islands grown on Silicon using Molecular Beam Epitaxy

J. Kolodzey, S. Cloutier, L. Nataraj, 2009, 2009 6th IEEE International Conference on Group IV Photonics.

Optoelectronic properties of Germanium islands formed on Silicon using Stranski-Krastanov growth by MBE

J. Kolodzey, S. Cloutier, L. Nataraj, 2009 .

Electrical properties of Si1−x−yGexCy and Ge1−yCy alloys

R. Wilson, J. Kolodzey, R. Jonczyk, 1997 .

A pGe C / nSi Heterojunction Diode Grown by Molecular Beam Epitaxy

P. R. Berger, B. Orner, S. Rommel, 1997 .

Optical absorption in alloys of Si, Ge, C, and Sn

B. Orner, F. Guarín, A. Powell, 1996 .

Optical and electronic properties of SiGeC alloys grown on Si substrates

Paul R. Berger, B. Orner, D. Hits, 1995 .

Resonant tunneling in Si/SiGe/Si structures with a single quantum well under surface passivation

S. Ray, J. Kolodzey, I. Antonova, 2011 .

TRANSIENT CHARACTERISTICS OF SiGe/Si QW STRUCTURES AT THz LASING

J. Kolodzey, I. Yassievich, I. Altukhov, 2007 .

Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures

J. Kolodzey, I. Yassievich, I. Altukhov, 2007 .

Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures

J. Kolodzey, I. Antonova, M. Kagan, 2005 .

THz lasing of SiGe/Si quantum‐well structures due to shallow acceptors

E. G. Chirkova, J. Kolodzey, R. Troeger, 2003 .

Tuning the optical modulation of wideband terahertz waves by the gate voltage of graphene field effect transistors

Huaiwu Zhang, Dainan Zhang, Q. Wen, 2016 .

Microstructure and optoelectronic performance of SiGe/Si heterostructures

Dainan Zhang, Yulong Liao, J. Kolodzey, 2016 .

Optical properties and band structure of Ge1−yCy and Ge-rich Si1−x−yGexCy alloys

B. Orner, D. Hits, M. Dashiell, 1998 .

Ellipsometry Studies, Optical Properties, And Band Structure of Gel. 1- y C y , Ge-RICH Si 1- x-y Ge x C y , And Boron-Doped Si 1- x Ge x Alloys

B. Orner, D. Hits, M. Dashiell, 1998 .

TERAHERTZ EMISSION FROM ELECTRICALLY PUMPED SILICON GERMANIUM INTERSUBBAND DEVICES

T. Troeger, J. Kolodzey, P. Lv, 2007 .

Terahertz-Emitting Silicon-Germanium Devices

S. Ray, T. Adam, J. Kolodzey, 2002 .

Band gap of Ge rich Si1−x−yGexCy alloys

B. Orner, J. Kolodzey, J. 0. Olowolafe, 1996 .

Optical properties of Ge1-yCy alloys

Paul R. Berger, B. Orner, D. Hits, 1996 .

Current injection induced terahertz emission from 4H-SiC p-n junctions

J. Kolodzey, A. Andrianov, Y. Vasilyev, 2013 .

Silicon Carbide Terahertz Emitting Devices

A. Powell, X. Zhang, J. Kolodzey, 2008 .

Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy

B. Orner, J. Kolodzey, S. Shah, 1995 .

Anomalous Carbon Interdiffusion in a-Si:H/a-SiC:H Multilayers

W. Schirmacher, J. Kolodzey, T. Fischer, 1992 .

The effect of composition on the thermal stability of Si1−x−yGexCy/Si heterostructures

D. Hits, M. Dashiell, J. Kolodzey, 1998 .

GROWTH AND THERMAL STABILITY OF PSEUDOMORPHIC GE1-YCY/GE SUPERLATTICES ON GE(001)

O. Schmidt, M. Dashiell, J. Kolodzey, 1999 .

STRAIN MODIFICATION IN THIN SI1-X-YGEXCY ALLOYS ON (100) SI FOR FORMATION OF HIGH DENSITY AND UNIFORMLY SIZED QUANTUM DOTS

D. Hits, Paul R. Berger, Xiaoping Shao, 1999 .

Structural Properties of Boron-Doped Germanium-Tin Alloys Grown by Molecular Beam Epitaxy

T. Adam, J. Kolodzey, Nupur Bhargava, 2014, Journal of Electronic Materials.

Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing

Paul R. Berger, Sean L. Rommel, James Kolodzey, 2000 .

Influence of underlying interlevel dielectric films on extrusion formation in aluminum interconnects

Baozhen Li, Fen Chen, James Kolodzey, 2000 .

Si1−x−yGexCy alloy band structures by linear combination of atomic orbitals

B. Orner, J. Kolodzey, 1997 .

Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(0 0 1) and Ge(0 0 1) substrates: I—High-resolution x-ray diffraction and x-ray topography

Christiana Honsberg, James Kolodzey, Nikolai Faleev, 2013 .

Fabrication of high-fill-factor photonic crystal devices on silicon-on-insulator substrates

Dennis W. Prather, Janusz Murakowski, James Kolodzey, 2003 .

Optical constants of B- and P-doped Ge1-yCy alloys on Si substrates

James Kolodzey, Bradley A. Orner, F. Chen, 1997, Photonics West.

MBE growth of ultra-thin GeSn film with high Sn content and its infrared/terahertz properties

Dainan Zhang, Yulong Liao, J. Kolodzey, 2016 .

Photoconductivity of germanium tin alloys grown by molecular beam epitaxy

James Kolodzey, Sangcheol Kim, Matthew Coppinger, 2013 .

Silicon Germanium Alloy Devices

James Kolodzey, J. Kolodzey, 2000 .

Increasing the operating temperature of boron doped silicon terahertz electroluminescence devices

J. Kolodzey, Sangcheol Kim, P. Lv, 2007 .

Molecular beam epitaxy growth of Ge1−yCy alloys on Si (100) with high carbon contents

M. Dashiell, J. Kolodzey, J. Lourtioz, 1999 .

The electrical properties of MIS capacitors with ALN gate dielectrics

James Kolodzey, Charles P. Swann, Thomas N. Adam, 2001 .

Microwave phase detection with a magnetic tunnel junction

Huaiwu Zhang, J. Kolodzey, J. Xiao, 2010 .

Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon

John S. Suehle, Enam Chowdhury, I. Rau, 2000 .

The design and construction of a 60 Hz repetition rate pulsed nitrogen laser.

J. Kolodzey, 1975 .

Properties of a-Si,Ge:H,F alloys prepared by rf glow discharge in an ultrahigh vacuum reactor

S. Wagner, J. Kolodzey, S. Aljishi, 1986 .

Optical and electronic properties of an amorphous silicon‐germanium alloy with a 1.28 eV optical gap

S. Wagner, P. Fauchet, J. Kolodzey, 1988 .

Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys☆

S. Wagner, I. Campbell, P. Fauchet, 1986 .

Transport properties of α-Si, Ge:H alloys prepared from SiF4, GeF4 and H2 in R.F. or D.C. Glow discharges

S. Wagner, P. Fauchet, J. Kolodzey, 1985 .

Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy

James Kolodzey, Matthew Coppinger, J. Kolodzey, 2013 .

Limitations of interface sharpness in a-Si:H/a-SiC:H multilayers

H. Cerva, J. Kolodzey, T. Muschik, 1991 .

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications

J. Kolodzey, Cheng Li, Songyan Chen, 2023, Nanophotonics.

Measurements of Light-Induced Degradation in A-Si, Ge:H, F Alloys,

S. Wagner, J. Kolodzey, V. Chu, 1986 .

Detection of spin-orbit torque with spin rotation symmetry

J. Kolodzey, J. Xiao, Tao Wang, 2020 .

Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

T. Adam, J. Kolodzey, S. Zollner, 2016 .

Dielectric response of thick low dislocation‐density Ge epilayers grown on (001) Si

James Kolodzey, Stefan Zollner, M. W. Dashiell, 1996 .

Temperature dependence of terahertz emission from silicon devices doped with boron

S. Ray, T. Adam, J. Kolodzey, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

Terahertz-emitting devices based on boron-doped silicon

Sangcheol Kim, S. Ray, T. Adam, 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

TERAHERTZ EMITTERS AND DETECTORS BASED ON SiGe NANOSTRUCTURES

S. Ray, T. Adam, J. Kolodzey, 2004 .

Characteristics of field-effect devices with gate oxide modification by DNA

G. Gonye, J. Kolodzey, G. Xuan, 2005 .

Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys

T. Adam, J. Kolodzey, S. Zollner, 2016 .

Band structure critical point energy in germanium–tin alloys with high tin contents

J. Kolodzey, S. Zollner, Dominic Imbrenda, 2021, Applied Physics Letters.

Capacitance study of selectively doped SiGe/Si heterostructures

S. Ray, J. Kolodzey, R. Troeger, 2005 .

Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots

R. Opila, J. Kolodzey, S. Cloutier, 2009 .

Electrical and optical properties of Ge–implanted 4H–SiC

J. Rabolt, R. Wilson, J. Kolodzey, 1999 .

Silicon carbide and silicon carbide:germanium heterostructure bipolar transistors

S. Saddow, D. Jacobson, J. Kolodzey, 2001 .

A p-Ge/sub 1-x/C/sub x//n-Si heterojunction diode grown by molecular beam epitaxy

P. R. Berger, B. Orner, S. Rommel, 1997, IEEE Electron Device Letters.

A p-Ge C /n-Si Heterojunction Diode Grown by Molecular Beam Epitaxy

P. R. Berger, B. Orner, S. Rommel, 1997 .

The effects of oxidation temperature on the capacitance-voltage characteristics of oxidized AlN films on Si

J. Suehle, J. Zavada, R. Wilson, 1997 .

Thermally oxidized AlN thin films for device insulators

D. Hits, Enam Chowdhury, James Kolodzey, 1997 .

Erratum: ``Electrical and optical properties of Ge-implanted 4H-SiC'' [Appl. Phys. Lett. 74, 540 (1999)]

J. Rabolt, J. Kolodzey, M. Tsao, 1999 .

Ge incorporation in SiC and the effects on device performance

J. Kolodzey, G. Xuan, X. Zhang, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation

R. Messham, J. Kolodzey, G. Desalvo, 2002 .

Strained SiC: Ge Layers in 4H SiC formed by Ge Implantation

M. Dashiell, J. Kolodzey, G. Xuan, 2002 .

The electrical characteristics of silicon carbide alloyed with germanium

J. Kolodzey, Robert G. Wilson, C. Swann, 2001 .

Spin-Polarized Transport and Dynamics in Magnetic Tunneling Structures

Y. Tserkovnyak, J. Kolodzey, B. Nikolić, 2009, IEEE Transactions on Magnetics.

Tunnel barrier enhanced voltage signal generated by magnetization precession of a single ferromagnetic layer.

J. Kolodzey, B. Nikolić, J. Xiao, 2008, Physical review letters.

TERAHERTZ SENSING OF MATERIALS

K. Barner, J. Kolodzey, T. Buma, 2007 .

The design and operation of TeraHertz sources based on silicon germanium alloys

A. Rosen, A. Rosen, S. Ray, 2003, 2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers..

Band gap and strain engineering of pseudomorphic Ge1−x−ySixSny alloys on Ge and GaAs for photonic applications

J. Kolodzey, S. Zollner, J. Hilfiker, 2018 .

Structural, electronic and optical properties of AlN-based oxides on Si and GaN substrates

J. Kolodzey, I. Rău, E. Chowdhury, 1998, Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159).

Microcrystallinity in α-Si, Ge:H, F Alloys

S. Wagner, I. Campbell, P. Fauchet, 1986 .

Compact electrically pumped nitrogen-doped 4H-SiC terahertz emitters operating up to 150 K

A. Powell, J. Kolodzey, P. Lv, 2005 .

Characteristics of THz waves and carrier scattering in boron-doped epitaxial Si and Si1−xGex films

A. Rosen, Samit K. Ray, James Kolodzey, 2004 .