N. Harada

发表

Lifetime of Resonant State in a Resonant Tunneling System

N. Harada, S. Kuroda, 1986 .

Theoretical Investigation of Graphene Nanoribbon Field-Effect Transistors Designed for Digital Applications

N. Yokoyama, N. Harada, Shintaro Sato, 2013 .

Performance Estimation of Graphene Field-Effect Transistors Using Semiclassical Monte Carlo Simulation

Y. Awano, M. Ohfuti, N. Harada, 2008 .

A polarity-controllable graphene inverter

N. Yokoyama, N. Harada, Shintaro Sato, 2010 .

Pt-based gate enhancement-mode InAlAs/InGaAs HEMTs for large-scale integration

T. Mimura, M. Abe, N. Harada, 1991, [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.

Highly uniform N-InAlAs/InGaAs HEMT's on a 3-in InP substrate using photochemical selective dry recess etching

M. Abe, N. Harada, S. Kuroda, 1992, IEEE Electron Device Letters.

Computational study on electrical properties of transition metal dichalcogenide field-effect transistors with strained channel

Naoki Harada, Naoki Yokoyama, Shintaro Sato, 2014 .

Graphene-gate transistors for gas sensing and threshold control

D. Kondo, S. Sato, T. Iwai, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Wafer-scale fabrication of transistors using CVD-grown graphene and its application to inverter circuit

N. Yokoyama, K. Tsukagoshi, D. Kondo, 2014 .

Selectively dry-etched n/sup +/-GaAs/N-InAlAs/InGaAs HEMTs for LSI

T. Mimura, M. Abe, S. Sasa, 1990, IEEE Electron Device Letters.

Theoretical study on high-frequency graphene-nanoribbon heterojunction backward diode

N. Harada, Shintaro Sato, H. Jippo, 2017 .

Electronic properties of NH4-adsorbed graphene nanoribbon as a promising candidate for a gas sensor

N. Harada, Shintaro Sato, 2016 .

Monte Carlo Simulations of High-Carrier-Velocity Acceleration in Graphene Field-Effect Transistors by Local Channel Width Modulation

Y. Awano, N. Harada, Aizuddin Mohamad, 2012 .

A new fabrication technology for AlGaAs/GaAs HEMT LSIs using InGaAs nonalloyed ohmic contacts

T. Mimura, M. Abe, N. Harada, 1989 .

HEMT with nonalloyed ohmic contacts using n+-InGaAs cap layer

T. Mimura, S. Kuroda, T. Mimura, 1987, IEEE Electron Device Letters.

Graphene-Novel Material for Nanoelectronics

Mari Ohfuchi, Shintaro Sato, Naoki Harada, 2010 .

Monte Carlo simulation of electron transport in a graphene diode with a linear energy band dispersion

Y. Awano, N. Yokoyama, N. Harada, 2011 .

Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes

Naoki Harada, Motonobu Sato, Naoki Yokoyama, 2010 .

Synthesis of Few-Layer and Multi-Layer Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transferring Processes

M. Nihei, N. Yokoyama, D. Kondo, 2009 .

A multigigahertz Josephson-semiconductor interface circuit using 77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltage driver for superconductor-semiconductor electronic hybrid systems

Y. Awano, N. Yokoyama, N. Harada, 2000, IEEE Journal of Solid-State Circuits.

Dependence of Field-Effect Mobility of Graphene Grown by Thermal Chemical Vapor Deposition on Its Grain Size

N. Yokoyama, N. Harada, Shintaro Sato, 2013 .

SFQ-to-level logic conversion by HTS Josephson drivers for output interface

K. Tanabe, Y. Tarutani, N. Yokoyama, 2003 .

Large-Area Synthesis of Graphene by Chemical Vapor Deposition and Transfer-Free Fabrication of Field-Effect Transistors

N. Yokoyama, D. Kondo, N. Harada, 2011 .

A 77 K analog monolithic HEMT amplifier for high-speed Josephson-semiconductor interface circuit

Naoki Harada, Naoki Yokoyama, Kohki Hikosaka, 1999 .