J. Encomendero

发表

Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures

Huili Grace Xing, Patrick Fay, Debdeep Jena, 2019, Physical Review Applied.

Experimental demonstration of enhanced terahertz coupling to plasmon in ultra-thin membrane AlGaN/GaN HEMT arrays

D. Jena, H. Xing, J. Encomendero, 2017, 2017 75th Annual Device Research Conference (DRC).

Resonant Tunneling Transport in Polar III-Nitride Heterostructures

D. Jena, H. Xing, J. Encomendero, 2019, High-Frequency GaN Electronic Devices.

N-polar GaN/AlN resonant tunneling diodes

Yongjin Cho, D. Jena, H. Xing, 2020, 2010.03079.

Comparison of unit cell coupling for grating‐gate and high electron mobility transistor array THz resonant absorbers

Hugo O. Condori Quispe, D. Jena, H. Xing, 2018, Journal of Applied Physics.

Repeatable Room Temperature Negative Differential Conductance in GaN/AlN Resonant Tunneling Diodes

D. Jena, H. Xing, P. Fay, 2016, 1606.08100.

Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2

Huili Grace Xing, Patrick Fay, Debdeep Jena, 2018 .

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

Huili Grace Xing, Patrick Fay, Debdeep Jena, 2017 .

THz devices based on 2D electron systems

Huili Grace Xing, Debdeep Jena, Bo Song, 2015, Defense + Security Symposium.

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

D. Jena, H. Xing, O. Brandt, 2023, 2305.10542.

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Zexuan Zhang, D. Jena, H. Xing, 2023, Applied Physics Letters.

Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates

Zexuan Zhang, D. Jena, H. Xing, 2022, AIP Advances.

Defeating broken symmetry with doping: Symmetric resonant tunneling in noncentrosymetric heterostructures

D. Jena, H. Xing, J. Encomendero, 2023, Physical review B.

Influence of collector doping setback in the quantum transport characteristics of GaN/AlN resonant tunneling diodes

D. Jena, H. Xing, J. Encomendero, 2021, Applied Physics Express.

Molecular beam epitaxy of polar III-nitride resonant tunneling diodes

D. Jena, J. Encomendero, S. Islam, 2021 .

New physics in GaN resonant tunneling diodes

Huili Grace Xing, Debdeep Jena, Jimy Encomendero, 2019, OPTO.

High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates

Zexuan Zhang, D. Jena, H. Xing, 2022, Applied Physics Letters.

Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates

Yongjin Cho, Zexuan Zhang, D. Jena, 2021, Applied Physics Letters.

FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

D. Jena, H. Xing, J. Encomendero, 2022, 2022 International Electron Devices Meeting (IEDM).

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

D. Jena, H. Xing, O. Brandt, 2023, APL Materials.

Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases

Huili Grace Xing, Patrick Fay, Berardi Sensale-Rodriguez, 2014 .

Epitaxial Ferrimagnetic Mn4N Thin Films on GaN by Molecular Beam Epitaxy

Yongjin Cho, Zexuan Zhang, D. Jena, 2022, IEEE Transactions on Magnetics.

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

D. Jena, H. Xing, J. Encomendero, 2020, Physical Review Applied.